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1. 发明申请

WO2009042054A2 ORGANOSILOXANE MATERIALS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS 审中-公开
标题翻译：无机材料选择区沉积物的有机硅氧烷材料
公开(公告)号：WO2009042054A2
公开(公告)日：2009-04-02
申请号：PCT/US2008010824
申请日：2008-09-17
申请人： EASTMAN KODAK CO , YANG CHENG , IRVING LYN MARIE , LEVY DAVID HOWARD , COWDERY-CORVAN PETER JEROME , FREEMAN DIANE CAROL
发明人： YANG CHENG , IRVING LYN MARIE , LEVY DAVID HOWARD , COWDERY-CORVAN PETER JEROME , FREEMAN DIANE CAROL
IPC分类号： C08F2/46
CPC分类号： C23C16/042 , C23C16/45551 , C23C16/545
摘要： An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译：一种用于形成图案化薄膜的原子层沉积工艺，包括提供衬底，向衬底施加沉积抑制剂材料，其中所述沉积抑制剂材料是有机硅氧烷化合物; 以及在步骤（b）之后图案化沉积抑制剂材料或同时施加沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。

2. 发明申请

WO2009042145A3 DELIVERY DEVICE FOR DEPOSITION 审中-公开
标题翻译：递送装置用于沉积
公开(公告)号：WO2009042145A3
公开(公告)日：2009-08-20
申请号：PCT/US2008011063
申请日：2008-09-24
申请人： EASTMAN KODAK CO , KERR ROGER STANLEY , LEVY DAVID HOWARD , MURRAY JAMES T
发明人： KERR ROGER STANLEY , LEVY DAVID HOWARD , MURRAY JAMES T
IPC分类号： C23C16/455
CPC分类号： B05B1/005 , C23C16/45551 , C23C16/45574 , Y10T29/494 , Y10T29/49432 , Y10T29/49826 , Y10T137/0318 , Y10T137/87249
摘要： A delivery device for thin-film material deposition has at least first, second, and third inlet ports for receiving a common supply for a first, a second and a third gaseous material, respectively. Each of the first, second, and third elongated emissive channels allow gaseous fluid communication with one of corresponding first, second, and third inlet ports. The delivery device can be formed from apertured plates (220. 230), superposed to define a network of interconnecting supply chambers and directing channels for routing each of the gaseous materials from its corresponding inlet port to a corresponding plurality of elongated emissive channels. The delivery device comprises a diffusing channel formed by a relief pattern between facing plates. Also disclosed is a process for thin film deposition. Finally, more generally, a flow diffuser and a corresponding method of diffusing flow is disclosed.
摘要翻译：用于薄膜材料沉积的递送装置具有至少第一，第二和第三入口端口，用于分别接收第一，第二和第三气态材料的共同供应。第一，第二和第三细长发射通道中的每一个允许与对应的第一，第二和第三入口端口之一的气态流体连通。输送装置可以由多孔板（220,230）形成，叠加以限定互连供应室的网络并且引导通道，用于将每个气态材料从其相应的入口端口路由到相应的多个细长的发射通道。输送装置包括由相对板之间的浮雕图案形成的扩散通道。还公开了一种用于薄膜沉积的方法。最后，更一般地，公开了一种流扩散器和相应的扩散流的方法。

3. 发明申请

WO2009042144A3 PROCESS FOR MAKING DOPED ZINC OXIDE 审中-公开
标题翻译：制备掺杂氧化锌的方法
公开(公告)号：WO2009042144A3
公开(公告)日：2009-05-14
申请号：PCT/US2008011062
申请日：2008-09-24
申请人： EASTMAN KODAK CO , COWDERY-CORVAN PETER JEROME , LEVY DAVID HOWARD , PAWLIK THOMAS D , FREEMAN DIANE CAROL
发明人： COWDERY-CORVAN PETER JEROME , LEVY DAVID HOWARD , PAWLIK THOMAS D , FREEMAN DIANE CAROL
IPC分类号： H01L21/365
CPC分类号： H01L21/02576 , B33Y80/00 , C23C16/407 , C23C16/45504 , C23C16/45544 , C23C16/45551 , C23C16/45574 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要： The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.
摘要翻译：本发明涉及一种制造用于晶体管中的氧化锌基薄膜半导体的方法，该方法包括在衬底上沉积薄膜，该方法包括提供包含第一，第二和第三气态材料的多种气态材料，其中第一气态材料是含锌挥发性材料，并且第二气态材料与其反应，使得当第一或第二气态材料之一在基板的表面上时，第一或第二气态材料中的另一种将反应以沉积衬底上的材料层，其中第三气态材料是惰性的，并且其中挥发性的含铟化合物被引入到第一反应性气态材料或补充气态材料中。

4. 发明申请

WO2009042051A2 PROCESS FOR DEPOSITING ORGANIC MATERIALS 审中-公开
标题翻译：沉积有机材料的工艺
公开(公告)号：WO2009042051A2
公开(公告)日：2009-04-02
申请号：PCT/US2008010801
申请日：2008-09-17
申请人： EASTMAN KODAK CO , FREEMAN DIANE CAROL , LEVY DAVID HOWARD , COWDERY-CORVAN PETER JEROME
发明人： FREEMAN DIANE CAROL , LEVY DAVID HOWARD , COWDERY-CORVAN PETER JEROME
IPC分类号： H01L21/469
CPC分类号： C23C16/30 , B05D1/60 , B05D2252/02 , C23C16/45551 , C23C16/45553 , C23C16/545
摘要： A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250°C, during deposition of the organic thin film.
摘要翻译：公开了通过原子层沉积在衬底上制造有机薄膜的方法，该方法包括同时引导一系列沿着大致平行的细长通道的气流，并且其中一系列气流依次包括至少第一反应性气态材料，惰性吹扫气体和第二反应性气体材料，任选重复多次，其中第一反应性气态材料能够与用第二反应性气态材料处理的基底表面反应，其中第一反应性气态材料，第二反应性气体物质或两者都是挥发性有机化合物。该方法在沉积有机薄膜的过程中基本上在大气压以下和250℃以下进行。

5. 发明申请

WO2007136656A3 COLORED MASKING FOR FORMING TRANSPARENT STRUCTURES 审中-公开
标题翻译：用于形成透明结构的彩色遮蔽
公开(公告)号：WO2007136656A3
公开(公告)日：2008-07-10
申请号：PCT/US2007011734
申请日：2007-05-16
申请人： EASTMAN KODAK CO , IRVING LYN MARIE , LEVY DAVID HOWARD , IRVING MARK EDWARD
发明人： IRVING LYN MARIE , LEVY DAVID HOWARD , IRVING MARK EDWARD
IPC分类号： G03F1/10 , G03F7/09 , G03F7/20
CPC分类号： G03F7/2018 , G03F1/56 , G03F7/0035 , G03F7/027 , G03F7/2014 , Y10T428/24802 , Y10T428/24917
摘要： The invention relates to a process for forming a stacked transparent structure comprising providing a support, coating one side of said support with a multicolored mask, coating the other side of the support with a layer curable by visible light, and exposing the light-curable layer through the mask with visible light to cure the layer curable by light in exposed portions to form a cured pattern.
摘要翻译：本发明涉及一种用于形成层叠透明结构的方法，包括提供支撑体，用多色面罩涂覆所述支撑体的一侧，用可见光固化的层涂覆支撑体的另一侧，并将可光固化层通过具有可见光的掩模来固化由暴露部分中的光可固化的层以形成固化图案。

6. 发明申请

WO2007126585A3 PROCESS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积过程
公开(公告)号：WO2007126585A3
公开(公告)日：2008-04-24
申请号：PCT/US2007006415
申请日：2007-03-14
申请人： EASTMAN KODAK CO , LEVY DAVID HOWARD
发明人： LEVY DAVID HOWARD
IPC分类号： C23C16/455
CPC分类号： C23C16/545 , B33Y80/00 , C23C16/403 , C23C16/407 , C23C16/45504 , C23C16/45519 , C23C16/45551 , C23C16/45591
摘要： The present invention relates to a deposition process for thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first and second gaseous materials are reactive with each other such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials. The process comprises flowing the gaseous materials along the length direction of a plurality of elongated channels across the surface of the substrate surface in close proximity thereto.
摘要翻译：本发明涉及一种用于薄膜沉积到衬底上的沉积工艺，包括提供至少包括第一，第二和第三气态材料的多种气态材料，其中第一和第二气态材料彼此反应，使得当一个第一或第二气体材料的第一或第二气体材料在基材的表面上，另一个第一或第二气态材料将反应以在基材上沉积一层材料，并且其中第三气态材料相对于与第一或第二气态材料反应第二种气态物质。该方法包括使气态材料沿多个细长通道的长度方向流过基板表面的紧邻其表面。

7. 发明申请

WO2011056438A3 CONVEYANCE SYSTEM INCLUDING OPPOSED FLUID DISTRIBUTION MANIFOLDS 审中-公开
标题翻译：包括流体分配管理的输送系统
公开(公告)号：WO2011056438A3
公开(公告)日：2012-04-19
申请号：PCT/US2010053467
申请日：2010-10-21
申请人： EASTMAN KODAK CO , LEVY DAVID HOWARD , KERR ROGER STANLEY , SPATH TODD MATHEW
发明人： LEVY DAVID HOWARD , KERR ROGER STANLEY , SPATH TODD MATHEW
IPC分类号： C23C16/54 , C23C16/455
CPC分类号： C23C16/54 , C23C16/45551 , C23C16/45565 , C23C16/45574 , C23C16/45589 , C23C16/545
摘要： A fluid conveyance system for thin film material deposition includes a first fluid distribution manifold and a second distribution manifold. The first fluid distribution manifold includes an output face that includes a plurality of elongated slots. The plurality of elongated slots includes a source slot and an exhaust slot. The second fluid distribution manifold includes an output face that includes a plurality of openings. The plurality of openings include a source opening and an exhaust opening. The second fluid distribution manifold is positioned spaced apart from and opposite the first fluid distribution manifold such that the source opening of the output face of the second fluid distribution manifold mirrors the source slot of the output face of the first fluid distribution manifold and the exhaust opening of the output face of the second fluid distribution manifold mirrors the exhaust slot of the output face of the first fluid distribution manifold.
摘要翻译：用于薄膜材料沉积的流体输送系统包括第一流体分配歧管和第二分配歧管。第一流体分配歧管包括包括多个细长槽的输出面。多个细长槽包括源槽和排气槽。第二流体分配歧管包括包括多个开口的输出面。多个开口包括源开口和排气口。第二流体分配歧管与第一流体分配歧管间隔开并相对设置，使得第二流体分配歧管的输出面的源开口反映第一流体分配歧管的输出面的源槽和排气口所述第二流体分配歧管的输出面与第一流体分配歧管的输出面的排气槽反映。

8. 发明申请

WO2009042052A2 PROCESS FOR FORMING THIN FILM ENCAPSULATION LAYERS 审中-公开
标题翻译：形成薄膜包封层的方法
公开(公告)号：WO2009042052A2
公开(公告)日：2009-04-02
申请号：PCT/US2008010804
申请日：2008-09-17
申请人： EASTMAN KODAK CO , FEDOROVSKAYA ELENA A , BOROSON MICHAEL LOUIS , LEVY DAVID HOWARD , AGOSTINELLI JOHN ALPHONSE
发明人： FEDOROVSKAYA ELENA A , BOROSON MICHAEL LOUIS , LEVY DAVID HOWARD , AGOSTINELLI JOHN ALPHONSE
IPC分类号： B05D5/12
CPC分类号： B05D5/00 , C23C16/403 , C23C16/405 , C23C16/45551 , C23C16/45574 , H01L51/5253
摘要： A process is disclosed for making a thin film encapsulation package for an OLED device by depositing a thin film material on an OLED device to be encapsulated, comprising simultaneously directing a series of gas flows along substantially parallel elongated output openings, wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material to form an encapsulating thin film, wherein the first reactive gaseous material is a volatile organo-metal precursor compound. The process is carried out substantially at or above atmospheric pressure, and the temperature of the substrate during deposition is under 250°C.
摘要翻译：公开了一种用于通过在待封装的OLED器件上沉积薄膜材料来制造用于OLED器件的薄膜封装封装的方法，其包括同时沿着基本上平行的细长输出开口引导一系列气流，其中所述一系列气流包括依次包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气体材料，任选重复多次，其中第一反应性气态材料能够与用第二反应性气态材料处理的基底表面反应反应性气态物质形成封装薄膜，其中第一反应性气体材料是挥发性有机金属前体化合物。该方法基本上在大气压以上或更高的温度下进行，沉积时的基板温度低于250℃。

9. 发明申请

WO2008085474A3 DELIVERY DEVICE FOR THIN FILM DEPOSITION 审中-公开
标题翻译：用于薄膜沉积的输送装置
公开(公告)号：WO2008085474A3
公开(公告)日：2008-11-06
申请号：PCT/US2007026326
申请日：2007-12-26
申请人： EASTMAN KODAK CO , NELSON SHELBY FORRESTER , LEVY DAVID HOWARD , KERR ROGER STANLEY
发明人： NELSON SHELBY FORRESTER , LEVY DAVID HOWARD , KERR ROGER STANLEY
IPC分类号： C23C16/455
CPC分类号： C23C16/45551 , B33Y80/00 , C23C16/4412 , C23C16/45517 , C23C16/45519 , C23C16/45559 , C23C16/45568 , C23C16/45574 , C23C16/54
摘要： A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.
摘要翻译：公开了一种在衬底上沉积薄膜材料的方法，其中包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面，并且其中一系列气体流包括至少第一反应性气体材料，惰性吹扫气体和第二反应性气态材料，其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应。还公开了能够进行这种处理的系统。

10. 发明申请

WO2007126582A3 APPARATUS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的装置
公开(公告)号：WO2007126582A3
公开(公告)日：2007-12-21
申请号：PCT/US2007006390
申请日：2007-03-14
申请人： EASTMAN KODAK CO , LEVY DAVID HOWARD
发明人： LEVY DAVID HOWARD
IPC分类号： C23C16/54 , C23C16/455
CPC分类号： H01L29/76 , C23C16/45525 , C23C16/45551 , C23C16/45563 , C23C16/45574 , C23C16/45595 , C23C16/545
摘要： The present invention provides a distribution manifold (10) for thin-film material deposition onto a substrate (20) comprising a plurality of inlet ports (18) for a sequence of gaseous materials, an output face comprising a plurality of open elongated output channels (12), each channel extending in a length direction substantially in parallel. The distribution manifold (10) can be employed in a deposition system for thin film deposition, further comprising a plurality of sources for a plurality of gaseous materials and a support for positioning a substrate in pre-designed close proximity to the output face of the distribution manifold (10). During operation of the system, relative movement between the output face and the substrate support is accomplished.
摘要翻译：本发明提供了一种用于薄膜材料沉积到基底（20）上的分配歧管（10），其包括用于一系列气态材料的多个入口（18），输出面包括多个开放的细长输出通道 12），每个通道在长度方向上基本平行地延伸。分配歧管（10）可以用于薄膜沉积的沉积系统中，还包括用于多种气态材料的多个源和用于将预定设计的基板定位成靠近分布的输出面的支撑件歧管（10）。在系统操作期间，完成输出面和基板支撑件之间的相对运动。

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