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    • 1. 发明申请
    • Method for performing pattern pitch-split decomposition utilizing anchoring features
    • 使用锚固特征进行图案间距分解分解的方法
    • US20080092106A1
    • 2008-04-17
    • US11898647
    • 2007-09-13
    • Duan-Fu HsuNoel CorcoranJang ChenDouglas Van Den Broeke
    • Duan-Fu HsuNoel CorcoranJang ChenDouglas Van Den Broeke
    • G06F17/50
    • G03F7/70466G03F1/70G03F7/70433
    • A method for decomposing a target pattern containing features to be printed on a wafer into multiple patterns. The method includes the steps of: (a) determining a minimum critical dimension and pitch associated with a process to be utilized to image the multiple patterns; (b) generating an anchoring feature; (c) disposing the anchoring feature adjacent a first feature of the target pattern; (d) growing the anchoring feature a predetermined amount so as to define a first area; (e) assigning any feature within the first area to a first pattern; (f) disposing the anchoring feature adjacent a second feature of the target pattern; (g) growing the anchoring feature the predetermined amount so as to define a second area; and (h) assigning any feature within the second area to a second pattern. Steps (c)-(h) are then repeated until the densely spaced features within the target pattern have been assigned to either the first or second pattern.
    • 一种用于将包含要印刷在晶片上的特征的目标图案分解为多个图案的方法。 该方法包括以下步骤:(a)确定与要用于对多个图案成像的过程相关联的最小临界尺寸和间距; (b)产生锚固特征; (c)将所述锚定特征设置在所述目标图案的第一特征附近; (d)使锚定特征增长预定量以限定第一区域; (e)将第一区域内的任何特征分配给第一模式; (f)将所述锚定特征设置在所述目标图案的第二特征附近; (g)使锚定特征增长预定量以限定第二区域; 和(h)将第二区域内的任何特征分配给第二模式。 然后重复步骤(c) - (h),直到目标图案内密集间隔的特征被分配给第一或第二图案。
    • 2. 发明申请
    • Method and apparatus for performing model-based OPC for pattern decomposed features
    • 用于模式分解特征执行基于模型的OPC的方法和装置
    • US20080069432A1
    • 2008-03-20
    • US11898646
    • 2007-09-13
    • Duan-Fu HsuJung ParkDouglas Van Den BroekeJang Chen
    • Duan-Fu HsuJung ParkDouglas Van Den BroekeJang Chen
    • G06K9/00
    • G06T7/0004G03F1/36G03F1/70G03F7/70466G03F7/70475
    • A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
    • 一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。 该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差,以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。
    • 5. 发明申请
    • Method and apparatus for performing dark field double dipole lithography (DDL)
    • 用于进行暗场双偶极子光刻(DDL)的方法和装置
    • US20080020296A1
    • 2008-01-24
    • US11783261
    • 2007-04-06
    • Duan-Fu HsuSangbong ParkDouglas Van Den BroekeJang Chen
    • Duan-Fu HsuSangbong ParkDouglas Van Den BroekeJang Chen
    • G03C5/00G03F1/00
    • G03F1/36G03F1/70G03F7/70125G03F7/70466
    • A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
    • 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。
    • 6. 发明申请
    • Method, program product and apparatus for performing double exposure lithography
    • 用于进行双曝光光刻的方法,程序产品和装置
    • US20060277521A1
    • 2006-12-07
    • US11402273
    • 2006-04-12
    • Jang ChenDuan-Fu HsuDouglas Van Den Broeke
    • Jang ChenDuan-Fu HsuDouglas Van Den Broeke
    • G06F17/50G03F1/00G21K5/00G06F19/00A61N5/00G21G5/00
    • G06F17/5081G03F1/144G03F1/70G03F7/70466G06F2217/08G06F2217/12
    • A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.
    • 基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。 该方法包括以下步骤:定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。 非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。 非关键特征形成在H掩模和使用铬的V形掩模中。 然后通过成像H掩模和V掩模来将目标图案成像在衬底上。
    • 7. 发明申请
    • Method and apparatus for performing model-based layout conversion for use with dipole illumination
    • 用于与偶极照明一起使用的基于模型的布局转换的方法和装置
    • US20070042277A1
    • 2007-02-22
    • US11588326
    • 2006-10-27
    • Duan-Fu HsuKurt WamplerMarkus Antonius EurlingsJang ChenNoel Corcoran
    • Duan-Fu HsuKurt WamplerMarkus Antonius EurlingsJang ChenNoel Corcoran
    • G06F17/50G03F1/00
    • G03F7/705G03F1/36G03F1/70G03F7/70125G03F7/70441G03F7/70466
    • A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.
    • 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤,其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换,并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替,其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤,其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置,并且平行于多个垂直边缘中的至少一个垂直边缘 特征,并且执行特征偏置步骤,其中水平掩模中的多个特征的水平边缘中的至少一个被调整,使得所得到的特征精确地再现目标图案,并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘,使得所得到的特征精确地再现目标图案。
    • 9. 发明申请
    • Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs
    • 识别极端相互作用间距区域的方法,设计掩模图案和制造掩模的方法,设备制造方法和计算机程序
    • US20050034096A1
    • 2005-02-10
    • US10938510
    • 2004-09-13
    • Xuelong ShiJang ChenDuan-Fu Hsu
    • Xuelong ShiJang ChenDuan-Fu Hsu
    • G03F1/08G03F7/20H01L21/027G06F17/50
    • G03F7/705G03F7/70125G03F7/70433G03F7/70441
    • Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.
    • 光学邻近效应(OPE)在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。 本发明人已经确定,这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸,而且还影响主要特征的工艺纬度。 此外,已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。 根据相邻特征产生的场的相位,主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善,或者由于破坏性的光场干扰而降低。 由相邻特征产生的场的相位取决于俯仰以及照明角度。 对于给定的照明,禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。 本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。 此外,它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。