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1. 发明授权

US07450415B2 Phase-change memory device 有权
标题翻译：相变存储器件
公开(公告)号：US07450415B2
公开(公告)日：2008-11-11
申请号：US11640956
申请日：2006-12-19
申请人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Beak-hyung Cho , Byung-gil Choi
发明人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Beak-hyung Cho , Byung-gil Choi
IPC分类号： G11C11/00
CPC分类号： G11C8/12 , G11C11/5678 , G11C13/0004 , G11C13/0023 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A phase-change memory device is provided. The phase-change memory device includes a phase-change memory cell array including a first memory block having a plurality of phase-change memory cells each connected between each of a plurality of bit lines and a first word line, a second memory block having a plurality of phase-change memory cells each connected between each of the plurality of bit lines and a second word line, and first and second pull-down transistors pulling-down each voltage level of the first and the second word lines and sharing a node and a row driver including a first and a second pull-up transistor pulling-up each voltage level of the first and the second word lines.
摘要翻译：提供了相变存储器件。相变存储器件包括相变存储器单元阵列，该相变存储单元阵列包括具有连接在多个位线和第一字线中的每一个之间的多个相变存储单元的第一存储器块，具有第多个相变存储单元，分别连接在多个位线和第二字线之间，第一和第二下拉晶体管下拉第一和第二字线的每个电压电平并共享一个节点;以及行驱动器，包括第一和第二上拉晶体管，其拉出第一和第二字线的每个电压电平。

2. 发明申请

US20070153616A1 Phase-change memory device 有权
标题翻译：相变存储器件
公开(公告)号：US20070153616A1
公开(公告)日：2007-07-05
申请号：US11640956
申请日：2006-12-19
申请人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Beak-hyung Cho , Byung-gil Choi
发明人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Beak-hyung Cho , Byung-gil Choi
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C8/12 , G11C11/5678 , G11C13/0004 , G11C13/0023 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/148
摘要： A phase-change memory device is provided. The phase-change memory device includes a phase-change memory cell array including a first memory block having a plurality of phase-change memory cells each connected between each of a plurality of bit lines and a first word line, a second memory block having a plurality of phase-change memory cells each connected between each of the plurality of bit lines and a second word line, and first and second pull-down transistors pulling-down each voltage level of the first and the second word lines and sharing a node and a row driver including a first and a second pull-up transistor pulling-up each voltage level of the first and the second word lines.
摘要翻译：提供了相变存储器件。相变存储器件包括相变存储器单元阵列，该相变存储单元阵列包括具有连接在多个位线和第一字线中的每一个之间的多个相变存储单元的第一存储器块，具有第多个相变存储单元，分别连接在多个位线和第二字线之间，第一和第二下拉晶体管下拉第一和第二字线的每个电压电平并共享一个节点;以及行驱动器，包括第一和第二上拉晶体管，其拉出第一和第二字线的每个电压电平。

3. 发明申请

US20100019217A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20100019217A1
公开(公告)日：2010-01-28
申请号：US12574783
申请日：2009-10-07
申请人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
发明人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1675 , Y10S977/754
摘要： A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.
摘要翻译：相变存储器件包括半导体衬底，布置在半导体衬底上的位线和字线彼此相交的相变存储器件，以及插入位线和字线之间的相变材料带，并且沿相对方向其基本上平行于字线的至少一部分。

4. 发明授权

US07613037B2 Phase-change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07613037B2
公开(公告)日：2009-11-03
申请号：US11529323
申请日：2006-09-29
申请人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
发明人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1675 , Y10S977/754
摘要： A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.
摘要翻译：相变存储器件包括半导体衬底，布置在半导体衬底上的位线和字线彼此相交的相变存储器件，以及插入位线和字线之间的相变材料带，并且沿相对方向其基本上平行于字线的至少一部分。

5. 发明授权

US07881103B2 Phase-change memory device and method of fabricating the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07881103B2
公开(公告)日：2011-02-01
申请号：US12574783
申请日：2009-10-07
申请人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
发明人： Du-eung Kim , Chang-soo Lee , Woo-yeong Cho , Byung-gil Choi
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C2213/72 , H01L27/2409 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1675 , Y10S977/754
摘要： A phase-change memory device includes a semiconductor substrate, a bit line and a word line arranged on the semiconductor substrate to intersect each other, and a phase-change material strip interposed between the bit line and the word line and extending lengthwise in a direction that is substantially parallel to at least a portion of the word line.
摘要翻译：相变存储器件包括半导体衬底，布置在半导体衬底上的位线和字线彼此相交的相变存储器件，以及插入位线和字线之间的相变材料带，并且沿相对方向其基本上平行于字线的至少一部分。

6. 发明申请

US20070206409A1 Phase-change random access memory device 有权
标题翻译：相变随机存取存储器件
公开(公告)号：US20070206409A1
公开(公告)日：2007-09-06
申请号：US11655160
申请日：2007-01-19
申请人： Byung-gil Choi , Chang-soo Lee , Bo-tak Lim
发明人： Byung-gil Choi , Chang-soo Lee , Bo-tak Lim
IPC分类号： G11C11/00
CPC分类号： G11C8/14 , G11C8/12 , G11C13/0004 , G11C13/0028
摘要： A phase-change random access memory device is provided. The phase-change random access memory device includes a plurality of memory blocks, a main word line, a plurality of local word lines and a plurality of section word line drivers connected between the main word line and each of the plurality of local word lines and adapted to adjusting voltage levels of the plurality of local word lines in response of voltages applied to the main word line and block information. The plurality of section word line drivers include at least one first section word line driver and at least one second section word line driver. The first section word line drivers include pull-down devices while not including pull-up devices.
摘要翻译：提供了相变随机存取存储器件。相变随机存取存储装置包括多个存储块，主字线，多个本地字线和连接在主字线与多个本地字线中的每一个之间的多个部分字线驱动器，以及适于响应于施加到主字线的电压和块信息来调整多个本地字线的电压电平。多个部分字线驱动器包括至少一个第一部分字线驱动器和至少一个第二部分字线驱动器。第一部分字线驱动器包括下拉器件，而不包括上拉器件。

7. 发明授权

US07474556B2 Phase-change random access memory device 有权
标题翻译：相变随机存取存储器件
公开(公告)号：US07474556B2
公开(公告)日：2009-01-06
申请号：US11655160
申请日：2007-01-19
申请人： Byung-gil Choi , Chang-soo Lee , Bo-tak Lim
发明人： Byung-gil Choi , Chang-soo Lee , Bo-tak Lim
IPC分类号： G11C11/00
CPC分类号： G11C8/14 , G11C8/12 , G11C13/0004 , G11C13/0028
摘要： A phase-change random access memory device is provided. The phase-change random access memory device includes a plurality of memory blocks, a main word line, a plurality of local word lines and a plurality of section word line drivers connected between the main word line and each of the plurality of local word lines and adapted to adjusting voltage levels of the plurality of local word lines in response of voltages applied to the main word line and block information. The plurality of section word line drivers include at least one first section word line driver and at least one second section word line driver. The first section word line drivers include pull-down devices while not including pull-up devices.
摘要翻译：提供了相变随机存取存储器件。相变随机存取存储装置包括多个存储块，主字线，多个本地字线和连接在主字线与多个本地字线中的每一个之间的多个部分字线驱动器，以及适于响应于施加到主字线的电压和块信息来调整多个本地字线的电压电平。多个部分字线驱动器包括至少一个第一部分字线驱动器和至少一个第二部分字线驱动器。第一部分字线驱动器包括下拉器件，而不包括上拉器件。

8. 发明申请

US20080084736A1 Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same 有权
标题翻译：多端口相变随机存取存储单元和多端口相变随机存取存储器件包括相同
公开(公告)号：US20080084736A1
公开(公告)日：2008-04-10
申请号：US11902704
申请日：2007-09-25
申请人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
发明人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
IPC分类号： G11C11/00
CPC分类号： G11C8/16 , G11C13/0004 , G11C2213/74 , G11C2213/79
摘要： A multi-port phase change random access memory (PRAM) cell, includes a PRAM element including a phase change material, a writing controller configured to operate in correspondence with a writing word line, the writing controller connecting a writing bit line to the PRAM element, and a reading controller configured to operate in correspondence with a reading word line, the reading controller connecting the PRAM element to a reading bit line.
摘要翻译：多端口相变随机存取存储器（PRAM）单元包括：包括相变材料的PRAM元件，配置成与写入字线对应地进行操作的写入控制器，写入控制器将写入位线连接到PRAM元件以及读取控制器，被配置为与读取字线对应地操作，读取控制器将PRAM元件连接到读取位线。

9. 发明授权

US07668006B2 Multi-port phase change random access memory cell and multi-port phase change random access memory device including the same 有权
标题翻译：多端口相变随机存取存储单元和多端口相变随机存取存储器件包括相同
公开(公告)号：US07668006B2
公开(公告)日：2010-02-23
申请号：US11902704
申请日：2007-09-25
申请人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
发明人： Kwang-jin Lee , Du-eung Kim , Chang-soo Lee , Qi Wang
IPC分类号： G11C11/00
CPC分类号： G11C8/16 , G11C13/0004 , G11C2213/74 , G11C2213/79
摘要： A multi-port phase change random access memory (PRAM) cell, includes a PRAM element including a phase change material, a writing controller configured to operate in correspondence with a writing word line, the writing controller connecting a writing bit line to the PRAM element, and a reading controller configured to operate in correspondence with a reading word line, the reading controller connecting the PRAM element to a reading bit line.
摘要翻译：多端口相变随机存取存储器（PRAM）单元包括：包括相变材料的PRAM元件，配置成与写入字线对应地进行操作的写入控制器，写入控制器将写入位线连接到PRAM元件以及读取控制器，被配置为与读取字线对应地操作，读取控制器将PRAM元件连接到读取位线。

10. 发明授权

US09032333B2 Display apparatus and displaying method of the same 有权
标题翻译：显示装置及其显示方法相同
公开(公告)号：US09032333B2
公开(公告)日：2015-05-12
申请号：US12754958
申请日：2010-04-06
申请人： Yeo-ri Yoon , Chang-soo Lee , Sang-hee Lee , Dong-heon Lee , Joon-ho Phang , Hyeon-ji Lee
发明人： Yeo-ri Yoon , Chang-soo Lee , Sang-hee Lee , Dong-heon Lee , Joon-ho Phang , Hyeon-ji Lee
IPC分类号： G06F3/048 , G06F17/30 , G06F3/00 , G06F3/0482 , G06F3/0481
CPC分类号： G06F17/30274 , G06F3/0481 , G06F3/0482 , G06F17/30864 , G06F17/30867 , G06F17/30873 , Y10S707/99935
摘要： A display apparatus and a displaying method of the same, the display apparatus including a content output unit which outputs at least one content; a display unit; a video processor which processes and outputs a list image of the contents to the display unit; and a controller which controls the video processor to change a display effect of the list image according to frequency of use of the contents.
摘要翻译：一种显示装置及其显示方法，所述显示装置包括输出至少一个内容的内容输出单元; 显示单元; 视频处理器，其将所述内容的列表图像处理并输出到所述显示单元; 以及控制器，其控制视频处理器根据内容的使用频率改变列表图像的显示效果。

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