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1. 发明申请

WO2013180857A1 SILICON WAFER COATED WITH A PASSIVATION LAYER 审中-公开
标题翻译：硅胶涂层与钝化层
公开(公告)号：WO2013180857A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/038108
申请日：2013-04-25
申请人： DOW CORNING CORPORATION
发明人： ASAD, Syed, Salman , BEAUCARNE, Guy , DESCAMPS, Pierre , KAISER, Vincent , LEEMPOEL, Partrick
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L21/02126 , H01L21/02274 , H01L23/564 , H01L31/022425 , H01L31/18 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.
摘要翻译：制造涂有钝化层的硅晶片。涂覆的硅晶片可以适用于光电池，该光伏电池将照射在电池正面上的光的能量转换为电能。

2. 发明申请

WO2014158796A1 PLASMA DEPOSITION METHOD 审中-公开
标题翻译：等离子体沉积法
公开(公告)号：WO2014158796A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/020215
申请日：2014-03-04
申请人： DOW CORNING CORPORATION
发明人： ASAD, Syed, Salman , DESCAMPS, Pierre , KAISER, Vincent , LEEMPOEL, Patrick
IPC分类号： H05H1/42 , H05H1/46
CPC分类号： H05H1/42 , H05H1/46 , H05H2001/4697
摘要： A method of plasma deposition of a coating on a substrate using a non-thermal equilibrium atmospheric pressure plasma generated with a plasma reactor device spaced apart from the substrate by a gap, the method comprising: generating a turbulent luminous plasma jet at atmospheric pressure within a luminous zone of a chamber defined by a dielectric housing having an outlet, the generating being done in such a way that the turbulent luminous plasma jet diffuses laterally to create a region of diffused luminous plasma within the luminous zone of the chamber and the turbulent aspect of the turbulent luminous plasma jet is insensitive to, and not a function of, the existence and size of the dielectric housing and the gap between dielectric housing and the substrate; contacting the turbulent luminous plasma jet with an atomized precursor material to give coating-useful products within the luminous zone of the chamber; allowing the coating-useful products including a diffused plasma, but not the turbulent luminous plasma jet, to flow from the luminous zone to the outlet of the dielectric housing, and then out of the outlet of the dielectric housing to give released coating-useful products disposed outside the dielectric housing and spaced apart from the turbulent luminous plasma jet, and contacting the released coating-useful products to the substrate so as to form the coating on the substrate. A manufactured article comprising a coated substrate prepared by the method.
摘要翻译：一种使用由等离子体反应器装置产生的非热平衡大气压等离子体在衬底上等离子体沉积涂层的方法，所述等离子体反应器装置通过间隙与衬底间隔开，所述方法包括：在大气压力下产生湍流发光等离子体射流由具有出口的绝缘壳体限定的室的发光区域，该发生方式使得湍流发光等离子体射流横向扩散以在腔室的发光区域内产生扩散的发光等离子体的区域，并且该紊流区域湍流发光等离子体射流对绝缘壳体的存在和尺寸以及介电壳体和衬底之间的间隙不敏感，而不是功能; 使湍流发光等离子体射流与雾化的前体材料接触，以在腔室的发光区域内产生涂层有用的产物; 允许包括扩散等离子体但不包括湍流发光等离子体射流的涂层有用的产品从发光区流到介质壳体的出口，然后从绝缘壳体的出口流出，以产生释放的涂层有用的产物设置在电介质外壳的外部并与湍流发光等离子体射流间隔开，并将释放的涂层有用的产品与基底接触，以在基底上形成涂层。一种包含通过该方法制备的涂覆基材的制品。

3. 发明申请

WO2013180856A1 SILICON WAFER COATED WITH A PASSIVATION LAYER 审中-公开
标题翻译：硅晶片涂有钝化层
公开(公告)号：WO2013180856A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/038102
申请日：2013-04-25
申请人： DOW CORNING CORPORATION
发明人： ASAD, Syed, Salman , BEAUCARNE, Guy , DESCAMPS, Pierre , KAISER, Vincent , LEEMPOEL, Patrick
IPC分类号： H01L21/02 , H01L21/3105 , H01L31/02
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/4481 , C23C16/45595 , C23C16/505 , C23C16/513 , H01L21/02126 , H01L21/02208 , H01L21/02216 , H01L21/02274 , H01L21/02323 , H01L21/02337 , H01L21/0234 , H01L21/3105 , H01L22/10 , H01L31/02167 , H05H1/46 , H05H2001/4697 , Y02E10/50
摘要： Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.
摘要翻译：生产涂覆有钝化层的硅晶片。涂覆的硅晶片可适用于光伏电池，光伏电池将来自照射在电池正面上的光的能量转换成电能。

4. 发明公开

EP2856509A1 SILICON WAFER COATED WITH A PASSIVATION LAYER 审中-公开
标题翻译：硅晶片上的钝化层
公开(公告)号：EP2856509A1
公开(公告)日：2015-04-08
申请号：EP13732278.0
申请日：2013-04-25
申请人： Dow Corning Corporation
发明人： ASAD, Syed, Salman , BEAUCARNE, Guy , DESCAMPS, Pierre , KAISER, Vincent , LEEMPOEL, Partrick
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L21/02126 , H01L21/02274 , H01L23/564 , H01L31/022425 , H01L31/18 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.

5. 发明公开

EP2856496A1 SILICON WAFER COATED WITH A PASSIVATION LAYER 审中-公开
标题翻译：硅晶片涂有钝化层
公开(公告)号：EP2856496A1
公开(公告)日：2015-04-08
申请号：EP13721501.8
申请日：2013-04-25
申请人： Dow Corning Corporation
发明人： ASAD, Syed, Salman , BEAUCARNE, Guy , DESCAMPS, Pierre , KAISER, Vincent , LEEMPOEL, Patrick
IPC分类号： H01L21/02 , H01L21/3105 , H01L31/02
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/4481 , C23C16/45595 , C23C16/505 , C23C16/513 , H01L21/02126 , H01L21/02208 , H01L21/02216 , H01L21/02274 , H01L21/02323 , H01L21/02337 , H01L21/0234 , H01L21/3105 , H01L22/10 , H01L31/02167 , H05H1/46 , H05H2001/4697 , Y02E10/50
摘要： Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.
摘要翻译：制造涂覆有钝化层的硅晶片。涂覆的硅晶片可适用于光伏电池，光伏电池将来自照射在电池正面上的光的能量转换成电能。

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