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1. 发明申请

WO2008052706A1 METHOD OF FORMING A FILM BY DEPOSITION FROM A PLASMA 审中-公开
标题翻译：通过从等离子体沉积形成薄膜的方法
公开(公告)号：WO2008052706A1
公开(公告)日：2008-05-08
申请号：PCT/EP2007/009306
申请日：2007-10-26
申请人： DOW CORNING CORPORATION , ECOLE POLYTECHNIQUE , ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
发明人： ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
IPC分类号： H01J37/32
CPC分类号： H01J37/32678 , C23C16/24 , C23C16/45523 , C23C16/45525 , C23C16/45542 , C23C16/511 , C23C16/515 , H01J37/32192
摘要： A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.
摘要翻译：描述了将等离子体中的非晶或微晶材料（例如硅）的膜沉积到衬底上的方法。将微波能量作为一系列离散的微波脉冲被引入腔室中，将膜前体气体作为一系列离散的气体脉冲引入腔室中，并且至少在每个微波脉冲期间将产生原子氢的气体提供给腔室。每个微波脉冲以不重叠的方式跟随前体气体脉冲，并且每个前体气体脉冲之后是不存在微波脉冲和前体气体脉冲的周期。

2. 发明申请

WO2008052705A8 METHOD FOR FORMING A FILM WITH A GRADED BANDGAP BY DEPOSITION OF AN AMORPHOUS MATERIAL FROM A PLASMA 审中-公开
公开(公告)号：WO2008052705A8
公开(公告)日：2008-05-08
申请号：PCT/EP2007/009305
申请日：2007-10-26
申请人： DOW CORNING CORPORATION , ECOLE POLYTECHNIQUE , ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
发明人： ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
IPC分类号： H01J37/32
摘要： A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.

3. 发明申请

WO2008052703A1 METHOD AND APPARATUS FOR FORMING A FILM BY DEPOSITION FROM A PLASMA 审中-公开
标题翻译：通过从等离子体沉积形成薄膜的方法和装置
公开(公告)号：WO2008052703A1
公开(公告)日：2008-05-08
申请号：PCT/EP2007/009303
申请日：2007-10-26
申请人： DOW CORNING CORPORATION , ECOLE POLYTECHNIQUE , ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
发明人： ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
IPC分类号： H01J37/32
CPC分类号： H01J37/32678 , C23C16/24 , C23C16/511 , H01J37/32192 , H05H1/46
摘要： An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.
摘要翻译：描述了一种用于从等离子体在基板上沉积膜的装置。该设备包括外壳，设置在外壳内的多个等离子体发生器元件，以及也在外壳内的用于支撑基板的装置。每个等离子体发生器元件包括具有从其发射微波的一端的微波天线，设置在所述天线端的区域中并且由此限定可产生等离子体的电子回旋共振区域的磁体，以及气体入口元件，其具有用于膜前体气体或等离子体气体的出口。出口被布置成将气体引导到位于磁体外部的膜沉积区域，如从微波天线所考虑的那样，出口位于热电子约束封套中或上方。

4. 发明申请

WO2014158796A1 PLASMA DEPOSITION METHOD 审中-公开
标题翻译：等离子体沉积法
公开(公告)号：WO2014158796A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/020215
申请日：2014-03-04
申请人： DOW CORNING CORPORATION
发明人： ASAD, Syed, Salman , DESCAMPS, Pierre , KAISER, Vincent , LEEMPOEL, Patrick
IPC分类号： H05H1/42 , H05H1/46
CPC分类号： H05H1/42 , H05H1/46 , H05H2001/4697
摘要： A method of plasma deposition of a coating on a substrate using a non-thermal equilibrium atmospheric pressure plasma generated with a plasma reactor device spaced apart from the substrate by a gap, the method comprising: generating a turbulent luminous plasma jet at atmospheric pressure within a luminous zone of a chamber defined by a dielectric housing having an outlet, the generating being done in such a way that the turbulent luminous plasma jet diffuses laterally to create a region of diffused luminous plasma within the luminous zone of the chamber and the turbulent aspect of the turbulent luminous plasma jet is insensitive to, and not a function of, the existence and size of the dielectric housing and the gap between dielectric housing and the substrate; contacting the turbulent luminous plasma jet with an atomized precursor material to give coating-useful products within the luminous zone of the chamber; allowing the coating-useful products including a diffused plasma, but not the turbulent luminous plasma jet, to flow from the luminous zone to the outlet of the dielectric housing, and then out of the outlet of the dielectric housing to give released coating-useful products disposed outside the dielectric housing and spaced apart from the turbulent luminous plasma jet, and contacting the released coating-useful products to the substrate so as to form the coating on the substrate. A manufactured article comprising a coated substrate prepared by the method.
摘要翻译：一种使用由等离子体反应器装置产生的非热平衡大气压等离子体在衬底上等离子体沉积涂层的方法，所述等离子体反应器装置通过间隙与衬底间隔开，所述方法包括：在大气压力下产生湍流发光等离子体射流由具有出口的绝缘壳体限定的室的发光区域，该发生方式使得湍流发光等离子体射流横向扩散以在腔室的发光区域内产生扩散的发光等离子体的区域，并且该紊流区域湍流发光等离子体射流对绝缘壳体的存在和尺寸以及介电壳体和衬底之间的间隙不敏感，而不是功能; 使湍流发光等离子体射流与雾化的前体材料接触，以在腔室的发光区域内产生涂层有用的产物; 允许包括扩散等离子体但不包括湍流发光等离子体射流的涂层有用的产品从发光区流到介质壳体的出口，然后从绝缘壳体的出口流出，以产生释放的涂层有用的产物设置在电介质外壳的外部并与湍流发光等离子体射流间隔开，并将释放的涂层有用的产品与基底接触，以在基底上形成涂层。一种包含通过该方法制备的涂覆基材的制品。

5. 发明申请

WO2013180856A1 SILICON WAFER COATED WITH A PASSIVATION LAYER 审中-公开
标题翻译：硅晶片涂有钝化层
公开(公告)号：WO2013180856A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/038102
申请日：2013-04-25
申请人： DOW CORNING CORPORATION
发明人： ASAD, Syed, Salman , BEAUCARNE, Guy , DESCAMPS, Pierre , KAISER, Vincent , LEEMPOEL, Patrick
IPC分类号： H01L21/02 , H01L21/3105 , H01L31/02
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/4481 , C23C16/45595 , C23C16/505 , C23C16/513 , H01L21/02126 , H01L21/02208 , H01L21/02216 , H01L21/02274 , H01L21/02323 , H01L21/02337 , H01L21/0234 , H01L21/3105 , H01L22/10 , H01L31/02167 , H05H1/46 , H05H2001/4697 , Y02E10/50
摘要： Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.
摘要翻译：生产涂覆有钝化层的硅晶片。涂覆的硅晶片可适用于光伏电池，光伏电池将来自照射在电池正面上的光的能量转换成电能。

6. 发明申请

WO2008053271A1 DEPOSITION OF AMORPHOUS SILICON FILMS BY ELECTRON CYCLOTRON RESONANCE 审中-公开
标题翻译：通过电子循环谐振沉积非晶硅膜
公开(公告)号：WO2008053271A1
公开(公告)日：2008-05-08
申请号：PCT/IB2006/003960
申请日：2006-11-14
申请人： DOW CORNING CORPORATION , ECOLE POLYTECHNIQUE , ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , DAO, Thien Hai , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
发明人： ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , DAO, Thien Hai , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
IPC分类号： C23C16/24 , C23C16/511 , H01J37/32
CPC分类号： C23C16/511 , C23C16/24 , H01J37/32192 , H01J37/32678
摘要： A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600°C, preferably 225-350°C and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range -30 to -105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.
摘要翻译：描述了通过从等离子体沉积而在衬底上形成非晶硅膜（a-Si：H）的方法。将基板放置在外壳中，将膜前体气体引入外壳中，并且从外壳中提取未反应和解离的气体，以便在外壳中提供低压。将微波能量引入外壳内的气体中，通过分布式电子回旋共振（DECR）在其中产生等离子体，并使材料从衬底上的等离子体沉积。衬底在沉积期间在200-600℃，优选225-350℃的温度下保持，并且将偏置电压施加到衬底上，以产生在-30至 - 105V，优选地使用在衬底保持器的面积的50-250mW / cm 2的范围内的RF功率的源。

7. 发明申请

WO2013180855A1 PASSIVATION OF SILICON DIELECTRIC INTERFACE 审中-公开
标题翻译：硅介电接口的钝化
公开(公告)号：WO2013180855A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/038101
申请日：2013-04-25
申请人： DOW CORNING CORPORATION
发明人： BEAUCARNE, Guy , DESCAMPS, Pierre , LEEMPOEL, Patrick
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A process for passivating the silicon / dielectric interface of a silicon wafer coated with a dielectric layer suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.
摘要翻译：钝化涂覆有适合用于光伏电池的电介质层的硅晶片的硅/电介质界面的方法，其将来自入射到电池正面的光的能量转换成电能。

8. 发明申请

WO2013180854A1 SILICON WAFER COATED WITH PASSIVATION LAYER 审中-公开
标题翻译：硅胶涂层与钝化层
公开(公告)号：WO2013180854A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/038096
申请日：2013-04-25
申请人： DOW CORNING CORPORATION
发明人： LEEMPOEL, Patrick
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A method to form a dielectric layer on a silicon surface with the purpose of passivating the newly formed Si/dielectric interface to increase the conversion efficiency of a photovoltaic device made from the silicon wafer. The coated silicon wafers may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.
摘要翻译：一种在硅表面上形成电介质层的方法，其目的是钝化新形成的Si /介质界面，以提高由硅晶片制成的光伏器件的转换效率。涂覆的硅晶片可以适用于光能电池，该光伏电池将照射在电池正面上的光的能量转换为电能。

9. 发明申请

WO2008052708A1 FILM DEPOSITION OF AMORPHOUS FILMS BY ELECTRON CYCLOTRON RESONANCE 审中-公开
标题翻译：通过电子循环共振膜沉积非晶膜
公开(公告)号：WO2008052708A1
公开(公告)日：2008-05-08
申请号：PCT/EP2007/009308
申请日：2007-10-26
申请人： DOW CORNING CORPORATION , ECOLE POLYTECHNIQUE , ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , DAO, Thien, Hai , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
发明人： ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , DAO, Thien, Hai , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
IPC分类号： C23C16/24 , C23C16/511 , H01J37/32 , H01L31/20
CPC分类号： C23C16/24 , C23C16/511 , H01J37/32192 , H01J37/32678 , H01L31/028 , H01L31/03762 , H01L31/03921 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method is disclosed for forming a film of an amorphous material, for example amorphous silicon, on a substrate (14), by deposition from a plasma. A substrate is placed in an enclosure having a defined volume, and a film precursor gas, for example silane, is introduced into the enclosure through pipes (20). Unreacted and dissociated gas is extracted from the enclosure through exit (22) so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distribution electron cyclotron resonance, and cause material to be deposited from the plasma on the substrate. The normalised precursor gas flow rate, defined as the precursor gas flow rate, divided by the area of the distributed plasma source, is greater than or equal to 700sccm/m2, and the gas residence time, defined as the volume of the reactor divided by the effective precursor gas pumping rate, is not more than 30ms.
摘要翻译：公开了一种用于通过从等离子体沉积在衬底（14）上形成无定形材料（例如非晶硅）的膜的方法。将衬底放置在具有限定体积的外壳中，并且通过管道（20）将膜前体气体，例如硅烷引入外壳。未反应和离解的气体通过出口（22）从外壳提取，以便在外壳中提供低压。将微波能量引入外壳内的气体中，通过分布电子回旋共振在其中产生等离子体，并使材料从基板上的等离子体沉积。定义为前体气体流速的归一化前体气体流量除以分布式等离子体源的面积大于或等于700sccm / m2，气体停留时间定义为反应器体积除以有效的前驱体气体抽出率不超过30ms。

10. 发明申请

WO2008052707A1 FILM DEPOSITION OF AMORPHOUS FILMS WITH A GRADED BANDGAP BY ELECTRON CYCLOTRON RESONANCE 审中-公开
标题翻译：通过电子循环共振沉积具有分级带的非晶膜的膜沉积
公开(公告)号：WO2008052707A1
公开(公告)日：2008-05-08
申请号：PCT/EP2007/009307
申请日：2007-10-26
申请人： DOW CORNING CORPORATION , ECOLE POLYTECHNIQUE , ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
发明人： ROCA I CABARROCAS, Pere , BULKIN, Pavel , DAINEKA, Dmitri , LEEMPOEL, Patrick , DESCAMPS, Pierre , KERVYN DE MEERENDRE, Thibault
IPC分类号： C23C16/24 , C23C16/511 , H01J37/32 , H01L31/20
CPC分类号： C23C16/511 , C23C16/24 , C23C16/45523 , H01J37/32192 , H01J37/32678 , H01L31/20
摘要： A method is described of forming a film of an amorphous material on a substrate (14) by deposition from a plasma. The substrate (14) is placed in an enclosure, a film precursor gas is introduced into the enclosure through pipes (20), and unreacted and dissociated gas is extracted from the enclosure through pipes (22) so as to provide a low pressure therein. Microwave energy- is introduced into the gas within the enclosure as a sequence of pulses at a given frequency and power level to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The frequency and/or power level of the pulses is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.
摘要翻译：描述了通过从等离子体沉积在衬底（14）上形成无定形材料的膜的方法。将衬底（14）放置在外壳中，通过管道（20）将膜前体气体引入外壳中，通过管道（22）从外壳中提取未反应和解离的气体，以便在其中提供低压。将微波能量作为在给定频率和功率水平下的脉冲序列引入外壳内的气体，以通过分布式电子回旋共振（DECR）产生等离子体，并使材料从衬底上的等离子体沉积。脉冲的频率和/或功率电平在材料沉积过程中被改变，以便导致带隙在沉积材料的厚度上变化。

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