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1. 发明申请

US20050178748A1 Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface 有权
标题翻译：等离子体反应堆架空电源电极具有低电弧倾向，圆柱形气体出口和成形表面
公开(公告)号：US20050178748A1
公开(公告)日：2005-08-18
申请号：US11046538
申请日：2005-01-28
申请人： Douglas Buchberger , Daniel Hoffman , Olga Regelman , James Carducci , Keiji Horioka , Jang Yang
发明人： Douglas Buchberger , Daniel Hoffman , Olga Regelman , James Carducci , Keiji Horioka , Jang Yang
IPC分类号： H01J37/32 , B23K9/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/3244
摘要： An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.
摘要翻译：形成等离子体反应器的天花板的至少一部分的顶部气体分配电极具有面向反应器的处理区域的底面。电极包括用于在电极顶部处的供给压力下接收处理气体的气体供应歧管和在每个孔口的一端处相对于来自气体供应歧管的电极轴向延伸的多个降压圆柱形孔。电极内的径向气体分布歧管径向延伸穿过电极。多个轴向延伸的高电导气流通道将多个降压孔中的相应端部的相对端连接到径向气体分配歧管。在电极的等离子体面向底面中形成多个高电导圆柱形气体出口孔，并且轴向延伸到径向气体分配歧管。

2. 发明申请

US20050167051A1 Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction 有权
标题翻译：等离子体反应器具有最小的直流线圈，用于尖端，螺线管和镜面场，用于等离子体均匀性和器件损坏降低
公开(公告)号：US20050167051A1
公开(公告)日：2005-08-04
申请号：US11046656
申请日：2005-01-28
申请人： Daniel Hoffman , Roger Lindley , Michael Kutney , Martin Salinas , Hamid Tavassoli , Keiji Horioka , Douglas Buchberger
发明人： Daniel Hoffman , Roger Lindley , Michael Kutney , Martin Salinas , Hamid Tavassoli , Keiji Horioka , Douglas Buchberger
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.
摘要翻译：一种用于加工工件的等离子体反应器，包括由侧壁和天花板限定的真空室，以及在所述室中具有工件支撑表面并且面向天花板并且包括阴极电极的工件支撑基座。 RF发生器耦合到阴极电极。等离子体分布由覆盖工件支撑表面的第一平面中的外部环形内部电磁体控制，覆盖工件支撑表面并且具有比内部电磁体更大的直径的第二平面中的外部环形外部电磁体以及外部环形底部电磁体在工件支撑表面下方的第三平面内。内部，外部和底部电磁铁中的相应电源连接到电流源。

3. 发明申请

US20070097580A1 Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor 有权
标题翻译：在电容耦合等离子体反应器中以均匀的温度冷却晶片载体的方法
公开(公告)号：US20070097580A1
公开(公告)日：2007-05-03
申请号：US11410782
申请日：2006-04-24
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H02H5/04
CPC分类号： H01L21/67109
摘要： A method of transferring heat from or to a workpiece support in an RF coupled plasma reactor includes placing coolant in an internal flow channel that is located inside the workpiece support and transferring heat from or to the coolant by circulating the coolant through a refrigeration loop in which the internal flow channel of the workpiece support constitutes an evaporator of the refrigeration loop. The method further includes maintaining thermal conditions of the coolant inside the evaporator within a range in which heat exchange between the workpiece support and the coolant is primarily or exclusively through the latent heat of vaporization of the coolant.
摘要翻译：在RF耦合的等离子体反应器中将热量传递到工件支架的方法包括：将冷却剂放置在位于工件支架内部的内部流动通道中，并通过使冷却剂循环通过制冷循环来将热量传递或传递给冷却剂，工件支撑件的内部流动通道构成制冷回路的蒸发器。该方法还包括将蒸发器内部的冷却剂的热条件保持在工件支承件和冷却剂之间的热交换主要或仅通过冷却剂的潜热潜热的范围内。

4. 发明申请

US20060193102A1 METHOD AND APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE 有权
标题翻译：限制等离子体和加强流动导管的方法和装置
公开(公告)号：US20060193102A1
公开(公告)日：2006-08-31
申请号：US11381399
申请日：2006-05-03
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： H01T23/00
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中使用的环形环。在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。环形环可以由诸如碳化硅和铝的导电材料制成。

5. 发明申请

US20070081295A1 Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution 有权
标题翻译：具有均匀温度分布的冷却/加热晶片支架的电容耦合等离子体反应器
公开(公告)号：US20070081295A1
公开(公告)日：2007-04-12
申请号：US11409292
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67069 , H01L21/67248 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.
摘要翻译：用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路，制冷剂入口和制冷剂出口。优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。优选地，蒸发器内的制冷剂在气相和液相之间分配。结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。该特征改善了静电卡盘的直径上的温度分布的均匀性。

6. 发明申请

US20070081294A1 Capacitively coupled plasma reactor having very agile wafer temperature control 有权
标题翻译：具有非常敏捷的晶片温度控制的电容耦合等离子体反应器
公开(公告)号：US20070081294A1
公开(公告)日：2007-04-12
申请号：US11408333
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.
摘要翻译：用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制气体阀响应于温度探头的输出与所需温度之间的差异。

7. 发明申请

US20070091541A1 Method of processing a workpiece in a plasma reactor using feed forward thermal control 审中-公开
标题翻译：使用前馈热控制在等离子体反应器中处理工件的方法
公开(公告)号：US20070091541A1
公开(公告)日：2007-04-26
申请号：US11409326
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes an evaporator inside the electrostatic chuck, while pressurizing a workpiece-to-chuck interface with a thermally conductive gas, sensing conditions in the chamber including temperature near the workpiece and simulating heat flow through the electrostatic chuck in a thermal model of the chuck based upon the conditions. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using the model to estimate a change in thermal conditions of the coolant in the evaporator that would hold the temperature nearly constant by compensating for the next scheduled change in RF heat load, and making the change in thermal conditions of the coolant in the evaporator prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
摘要翻译：一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过包括静电卡盘内的蒸发器的制冷回路，同时对工件 - 卡盘与导热气体接触，基于条件，感测室内的条件，包括工件附近的温度，并模拟卡盘热模型中通过静电卡盘的热流。该方法还包括获得在工件上的RF热负荷的下一个预定的改变，并且使用该模型来估计蒸发器中的冷却剂的热条件的变化，该变化将通过补偿下一个预定的RF热变化来保持温度几乎恒定在通过静电卡盘的热传播延迟的头开始的下一次预定改变之前，在蒸发器中的冷却剂的热条件的变化。

8. 发明申请

US20070091539A1 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes 有权
标题翻译：具有前馈热控制系统的等离子体反应器，其使用用于适应RF功率变化或晶片温度变化的热模型
公开(公告)号：US20070091539A1
公开(公告)日：2007-04-26
申请号：US11409183
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

9. 发明申请

US20070081296A1 Method of operating a capacitively coupled plasma reactor with dual temperature control loops 有权
标题翻译：操作具有双温度控制回路的电容耦合等离子体反应器的方法
公开(公告)号：US20070081296A1
公开(公告)日：2007-04-12
申请号：US11410859
申请日：2006-04-24
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/6831 , H01L21/67069 , H01L21/67109 , H01L21/67248
摘要： In a plasma reactor having an electrostatic chuck with an electrostatic chuck top surface for supporting a workpiece, thermal transfer medium flow channels in the interior of the electrostatic chuck, a method for controlling temperature of the workpiece during plasma processing includes circulating thermal transfer medium through the thermal transfer medium flow passages and supplying a thermally conductive gas between the workpiece and the electrostatic chuck top surface, and changing thermal transfer medium thermal conditions of thermal transfer medium flowing in the thermal transfer medium flow channels so as to change the temperature of the electrostatic chuck at a first rate limited by the thermal mass of the electrostatic chuck. The method further includes changing the backside gas pressure of the thermally conductive gas so as to change the temperature of the workpiece at a second rate faster than the first rate.
摘要翻译：在具有用于支撑工件的静电卡盘顶面的静电卡盘的等离子体反应器中，静电卡盘内部的热转印介质流动通道，用于在等离子体处理期间控制工件的温度的方法包括循环热转印介质通过热转印介质流动通道，并且在工件和静电卡盘顶表面之间提供导热气体，以及改变在热转印介质流动通道中流动的热转印介质的热转印介质热条件，以便改变静电卡盘的温度以由静电卡盘的热质量限制的第一速率。该方法还包括改变导热气体的背侧气体压力，以便以比第一速率更快的速度改变工件的温度。

10. 发明申请

US20060172542A1 Method and apparatus to confine plasma and to enhance flow conductance 审中-公开
标题翻译：限制等离子体和增强流动电导的方法和装置
公开(公告)号：US20060172542A1
公开(公告)日：2006-08-03
申请号：US11046135
申请日：2005-01-28
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： H01L21/302 , C23F1/00 , H01L21/461
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to a method and an apparatus to confine a plasma within a processing region in a plasma processing chamber. The apparatus may include an annular ring with a gap distance with the chamber wall at between about 0.8 inch to about 1.5 inch. In addition to the annular plasma confinement ring, the plasma can also be confined by reducing a voltage supplied to the top electrode by a voltage ratio during plasma processing and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support and the substrate, if the substrate is present during processing. The voltage ratio can be adjusted by changing the impedances of the substrate support and the dielectric seal surrounding the top electrode. Lowering top electrode voltage by a voltage ratio and supplying the remaining voltage supplied to the top electrode at a negative phase at the substrate support reduce the amount of plasma got attracted to the grounded chamber walls and thus improves plasma confinement. This method of plasma confinement is called impedance confinement. Plasma confinement can be improved by using either the described annular ring, the impedance confinement scheme or a combination of both.
摘要翻译：本发明的实施例一般涉及在等离子体处理室中的处理区域内限制等离子体的方法和装置。该装置可以包括环形环，其具有在室壁之间的间隔距离在约0.8英寸至约1.5英寸之间。除了环形等离子体限制环之外，等离子体还可以通过在等离子体处理期间通过降低施加到顶部电极的电压比例的电压来提供约束，并且在衬底支撑件处以负相位提供提供给顶部电极的剩余电压，如果衬底在加工过程中存在的话。可以通过改变衬底支撑件和围绕顶部电极的电介质密封件的阻抗来调节电压比。通过电压比降低顶部电极电压并且在衬底支架处以负相位提供提供给顶部电极的剩余电压减少了被吸引到接地室壁的等离子体的量，从而改善了等离子体约束。这种等离子体约束的方法被称为阻抗限制。通过使用所描述的环形环，阻抗约束方案或两者的组合可以改善等离子体约束。

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