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1. 发明申请

US20120119202A1 Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture 有权
公开(公告)号：US20120119202A1
公开(公告)日：2012-05-17
申请号：US12286606
申请日：2008-09-30
申请人： Douglas A. Keszler , Jeremy Anderson , Peter A. Hersh , Jason K. Stowers , Stephen T. Meyers
发明人： Douglas A. Keszler , Jeremy Anderson , Peter A. Hersh , Jason K. Stowers , Stephen T. Meyers
IPC分类号： H01L29/24 , B32B9/04 , B29C47/00 , B01J19/08 , B05D5/12 , C23C14/28 , G03F7/20 , B32B17/06
CPC分类号： G03F7/0002 , B01J21/02 , B01J21/066 , B01J23/002 , B32B9/005 , B32B2457/14 , B82Y10/00 , B82Y40/00 , G03F7/0042 , G03F7/11 , H01L27/1225 , H01L29/7869
摘要： Devices having a thin film or laminate structure comprising hafnium and/or zirconium oxy hydroxy compounds, and methods for making such devices, are disclosed. The hafnium and zirconium compounds can be doped, typically with other metals, such as lanthanum. Examples of electronic devices or components that can be made include, without limitation, insulators, transistors and capacitors. A method for patterning a device using the materials as positive or negative resists or as functional device components also is described. For example, a master plate for imprint lithography can be made. An embodiment of a method for making a device having a corrosion barrier also is described. Embodiments of an optical device comprising an optical substrate and coating also are described. Embodiments of a physical ruler also are disclosed, such as for accurately measuring dimensions using an electron microscope.

2. 发明授权

US08318407B2 Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture 有权
公开(公告)号：US08318407B2
公开(公告)日：2012-11-27
申请号：US12286606
申请日：2008-09-30
申请人： Douglas A. Keszler , Jeremy Anderson , Peter A. Hersh , Jason K. Stowers
发明人： Douglas A. Keszler , Jeremy Anderson , Peter A. Hersh , Jason K. Stowers
IPC分类号： G03F7/20
CPC分类号： G03F7/0002 , B01J21/02 , B01J21/066 , B01J23/002 , B32B9/005 , B32B2457/14 , B82Y10/00 , B82Y40/00 , G03F7/0042 , G03F7/11 , H01L27/1225 , H01L29/7869
摘要： Devices having a thin film or laminate structure comprising hafnium and/or zirconium oxy hydroxy compounds, and methods for making such devices, are disclosed. The hafnium and zirconium compounds can be doped, typically with other metals, such as lanthanum. Examples of electronic devices or components that can be made include, without limitation, insulators, transistors and capacitors. A method for patterning a device using the materials as positive or negative resists or as functional device components also is described. For example, a master plate for imprint lithography can be made. An embodiment of a method for making a device having a corrosion barrier also is described. Embodiments of an optical device comprising an optical substrate and coating also are described. Embodiments of a physical ruler also are disclosed, such as for accurately measuring dimensions using an electron microscope.

3. 发明申请

US20110045406A1 SOLUTION PROCESSED THIN FILMS AND LAMINATES, DEVICES COMPRISING SUCH THIN FILMS AND LAMINATES, AND METHOD FOR THEIR USE AND MANUFACTURE 有权
标题翻译：溶液处理的薄膜和层压体，包含这种薄膜和层压体的装置及其使用和制造方法
公开(公告)号：US20110045406A1
公开(公告)日：2011-02-24
申请号：US12836492
申请日：2010-07-14
申请人： Douglas A. Keszler , Jeremy Anderson , Peter A. Hersh , Jason K. Stowers , Stephen T. Meyers
发明人： Douglas A. Keszler , Jeremy Anderson , Peter A. Hersh , Jason K. Stowers , Stephen T. Meyers
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L29/4908 , C01G1/10 , C01G25/006 , C01G25/06 , C01G27/006 , C01G27/06 , C01P2002/02 , C01P2002/72 , C01P2002/88 , C01P2004/03 , C01P2004/04 , C01P2006/40 , C23C18/06 , C23C18/1216 , C23C18/1225 , C23C18/1295 , G02B1/10 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02282 , H01L21/0337 , H01L21/28194 , H01L29/7869 , Y10S430/114 , Y10S430/143
摘要： Devices having a thin film or laminate structure comprising hafnium and/or zirconium oxy hydroxy compounds, and methods for making such devices, are disclosed. The hafnium and zirconium compounds can be doped, typically with other metals, such as lanthanum. Examples of electronic devices or components that can be made include, without limitation, insulators, transistors and capacitors. A method for patterning a device using the materials as positive or negative resists or as functional device components also is described. For example, a master plate for imprint lithography can be made. An embodiment of a method for making a device having a corrosion barrier also is described. Embodiments of an optical device comprising an optical substrate and coating also are described. Embodiments of a physical ruler also are disclosed, such as for accurately measuring dimensions using an electron microscope.
摘要翻译：公开了具有包含铪和/或锆羟基羟基化合物的薄膜或层压结构的装置以及制造这种装置的方法。铪和锆化合物可以掺杂，通常与其它金属如镧掺杂。可以制造的电子器件或组件的实例包括但不限于绝缘体，晶体管和电容器。还描述了使用这些材料作为正或负抗蚀剂或作为功能元件部件来构图设备的方法。例如，可以制造用于压印光刻的主板。还描述了制造具有腐蚀屏障的装置的方法的实施例。还描述了包括光学基底和涂层的光学装置的实施例。还公开了物理尺的实施例，例如使用电子显微镜精确地测量尺寸。

4. 发明授权

US08206892B2 Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture 有权
标题翻译：溶液处理的薄膜和层压板，包括这种薄膜和层压材料的装置及其使用和制造方法
公开(公告)号：US08206892B2
公开(公告)日：2012-06-26
申请号：US12836492
申请日：2010-07-14
申请人： Douglas A. Keszler , Jeremy Anderson , Jason K. Stowers
发明人： Douglas A. Keszler , Jeremy Anderson , Jason K. Stowers
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028 , G03F7/20
CPC分类号： H01L29/4908 , C01G1/10 , C01G25/006 , C01G25/06 , C01G27/006 , C01G27/06 , C01P2002/02 , C01P2002/72 , C01P2002/88 , C01P2004/03 , C01P2004/04 , C01P2006/40 , C23C18/06 , C23C18/1216 , C23C18/1225 , C23C18/1295 , G02B1/10 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02282 , H01L21/0337 , H01L21/28194 , H01L29/7869 , Y10S430/114 , Y10S430/143
摘要： Devices having a thin film or laminate structure comprising hafnium and/or zirconium oxy hydroxy compounds, and methods for making such devices, are disclosed. The hafnium and zirconium compounds can be doped, typically with other metals, such as lanthanum. Examples of electronic devices or components that can be made include, without limitation, insulators, transistors and capacitors. A method for patterning a device using the materials as positive or negative resists or as functional device components also is described. For example, a master plate for imprint lithography can be made. An embodiment of a method for making a device having a corrosion barrier also is described. Embodiments of an optical device comprising an optical substrate and coating also are described. Embodiments of a physical ruler also are disclosed, such as for accurately measuring dimensions using an electron microscope.
摘要翻译：公开了具有包含铪和/或锆羟基羟基化合物的薄膜或层压结构的装置以及制造这种装置的方法。铪和锆化合物可以掺杂，通常与其它金属如镧掺杂。可以制造的电子器件或组件的实例包括但不限于绝缘体，晶体管和电容器。还描述了使用这些材料作为正或负抗蚀剂或作为功能元件部件来构图设备的方法。例如，可以制造用于压印光刻的主板。还描述了制造具有腐蚀屏障的装置的方法的实施例。还描述了包括光学基底和涂层的光学装置的实施例。还公开了物理尺的实施例，例如使用电子显微镜精确地测量尺寸。

5. 发明申请

US20130295507A1 PROCESSES TO FORM AQUEOUS PRECURSORS, HAFNIUM AND ZIRCONIUM OXIDE FILMS, AND HAFNIUM AND ZIRCONIUM OXIDE PATTERNS 审中-公开
标题翻译：形成水性前体，氧化铪和氧化锆薄膜，氧化铪和氧化锆模板的方法
公开(公告)号：US20130295507A1
公开(公告)日：2013-11-07
申请号：US13997121
申请日：2011-12-23
申请人： Douglas A. Keszler , Kai Jiang , Jeremy Anderson
发明人： Douglas A. Keszler , Kai Jiang , Jeremy Anderson
IPC分类号： G03F7/004
CPC分类号： G03F7/0042 , C01G25/02 , C01G27/02 , C01P2002/72 , C01P2002/82 , C01P2004/03 , C01P2006/12 , C01P2006/40 , H01B1/08 , H01L51/0023
摘要： Embodiments of a method for synthesizing aqueous precursors comprising Hf4+ or Zr4+ cations, peroxide, and a monoprotic acid are disclosed. The aqueous precursors are suitable for making HfO2 and ZrO2 thin films, which subsequently can be patterned. The disclosed thin films are dense and continuous, with a surface roughness of ≦0.5 nm and a refractive index of 1.85-2.0 at λ=550 nm. Some embodiments of the disclosed thin films have a leakage-current density ≦20 nA/cm2 at 1 MV/cm, with a dielectric breakdown ≧3 MV/cm. The thin films can be patterned with radiation to form dense lines and space patterns.
摘要翻译：公开了用于合成含Hf4 +或Zr4 +阳离子，过氧化物和单质酸的含水前体的方法的实施方案。水性前体适于制备HfO 2和ZrO 2薄膜，其随后可以被图案化。所公开的薄膜是致密且连续的，在λ= 550nm处的表面粗糙度为0.5nm，折射率为1.85-2.0。所公开的薄膜的一些实施例具有1MV / cm 2的20nA / cm 2的漏电流密度，介电击穿> 3MV / cm。薄膜可以用辐射图案化以形成密集的线和空间图案。

6. 发明授权

US08969865B2 Semiconductor film composition 有权
标题翻译：半导体薄膜组成
公开(公告)号：US08969865B2
公开(公告)日：2015-03-03
申请号：US12097869
申请日：2006-07-31
申请人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
发明人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
IPC分类号： H01L29/10 , H01L29/12 , H01L21/02 , H01L29/786
CPC分类号： H01L21/02628 , H01L21/02554 , H01L21/02565 , H01L29/7869
摘要： A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
摘要翻译：半导体膜组合物包括氧化物半导体材料。至少一种多原子离子被结合到氧化物半导体材料中。

7. 发明申请

US20140281432A1 Systems and Methods for Move Elimination with Bypass Multiple Instantiation Table 有权
标题翻译：通过旁路多个实例化表移动消除的系统和方法
公开(公告)号：US20140281432A1
公开(公告)日：2014-09-18
申请号：US13840462
申请日：2013-03-15
申请人： Jeremy Anderson
发明人： Jeremy Anderson
IPC分类号： G06F9/30
CPC分类号： G06F9/30181 , G06F9/30032 , G06F9/3826 , G06F9/384
摘要： Systems and methods for move operation elimination with bypass Multiple Instantiation Table (MIT) logic. An example processing system may comprise a first data structure configured to store a plurality of physical register values; a second data structure configured to store a plurality of pointers, each pointer referencing an element of the first data structure; a third data structure including a plurality of move elimination sets, each move elimination set comprising a plurality of bits representing a plurality of logical registers; and a logic configured to perform a data manipulation operation by causing an element of the second data structure to reference an element of the first data structure, the logic further configured to reflect results of two or more data manipulation operations by performing a single update of the third data structure.
摘要翻译：通过旁路多实例化表（MIT）逻辑消除移动操作的系统和方法。示例处理系统可以包括被配置为存储多个物理寄存器值的第一数据结构; 配置为存储多个指针的第二数据结构，每个指针引用第一数据结构的元素; 包括多个移动消除集合的第三数据结构，每个移动消除集合包括表示多个逻辑寄存器的多个位; 以及逻辑，被配置为通过使所述第二数据结构的元素引用所述第一数据结构的元素来执行数据操作操作，所述逻辑还被配置为通过执行所述第二数据结构的单个更新来反映两个或更多个数据操作操作的结果第三个数据结构。

8. 外观设计

USD679361S1 Popper lure design 有权
标题翻译：波普诱惑设计
公开(公告)号：USD679361S1
公开(公告)日：2013-04-02
申请号：US29409951
申请日：2011-12-30
申请人： Jeremy Anderson
设计人： Jeremy Anderson

9. 发明申请

US20050242330A1 Dielectric material 有权
标题翻译：介电材料
公开(公告)号：US20050242330A1
公开(公告)日：2005-11-03
申请号：US10837411
申请日：2004-04-30
申请人： Gregory Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
发明人： Gregory Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
IPC分类号： C01G1/00 , C01G1/02 , C01G1/10 , C01G27/00 , C01G27/06 , H01B3/02 , H01B3/12 , H01L21/28 , H01L21/316 , H01L29/51 , C08F10/00 , C08F32/08
CPC分类号： H01B3/12 , C01G1/00 , C01G27/00 , C01G27/06 , C01P2006/40 , H01L21/28194 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.
摘要翻译：介电材料的一个实施例可以包括含金属的阳离子和多原子阴离子。

10. 发明授权

US07773365B2 Dielectric material 有权
标题翻译：介电材料
公开(公告)号：US07773365B2
公开(公告)日：2010-08-10
申请号：US10837411
申请日：2004-04-30
申请人： Gregory S. Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
发明人： Gregory S. Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
IPC分类号： H01G4/10 , B05D1/26 , B05D5/12
CPC分类号： H01B3/12 , C01G1/00 , C01G27/00 , C01G27/06 , C01P2006/40 , H01L21/28194 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.
摘要翻译：介电材料的一个实施例可以包括含金属的阳离子和多原子阴离子。

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