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    • 4. 发明申请
    • Thin-film transistor and method of making the same
    • 薄膜晶体管及其制作方法
    • US20070075365A1
    • 2007-04-05
    • US11242511
    • 2005-10-03
    • Peter MardilovichRandy HoffmanGregory Herman
    • Peter MardilovichRandy HoffmanGregory Herman
    • H01L27/12
    • H01L29/6675H01L29/41733H01L29/78681
    • A thin-film transistor includes a substrate having a substantially outwardly protruding support structure formed thereon such that a portion adjacent to the structure is exposed. The support structure has opposed sidewalls sloped at an angle relative to the substrate surface. A stack is established over the portion and over a portion of an adjacent opposed sidewall. The stack includes an insulating layer. A channel material is established on at least a portion of the stack, thus forming a channel having a length substantially determined by a thickness of the insulating layer in relation to the adjacent opposed sidewall angle. A gate dielectric is established on at least a portion of the channel material and a gate electrode is established on at least a portion of the gate dielectric.
    • 薄膜晶体管包括在其上形成有基本上向外突出的支撑结构的基板,使得与结构相邻的部分被暴露。 支撑结构具有相对于衬底表面倾斜一定角度的相对侧壁。 在相邻的相对侧壁的部分和一部分上建立堆叠。 堆叠包括绝缘层。 在堆叠的至少一部分上建立通道材料,从而形成通道,其长度基本上由绝缘层的厚度相对于相邻的相对的侧壁角度确定。 在沟道材料的至少一部分上建立栅极电介质,并且在栅极电介质的至少一部分上建立栅电极。