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1. 发明授权

US08969865B2 Semiconductor film composition 有权
标题翻译：半导体薄膜组成
公开(公告)号：US08969865B2
公开(公告)日：2015-03-03
申请号：US12097869
申请日：2006-07-31
申请人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
发明人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
IPC分类号： H01L29/10 , H01L29/12 , H01L21/02 , H01L29/786
CPC分类号： H01L21/02628 , H01L21/02554 , H01L21/02565 , H01L29/7869
摘要： A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
摘要翻译：半导体膜组合物包括氧化物半导体材料。至少一种多原子离子被结合到氧化物半导体材料中。

2. 发明申请

US20100044698A1 Semiconductor Film Composition 有权
标题翻译：半导体薄膜组成
公开(公告)号：US20100044698A1
公开(公告)日：2010-02-25
申请号：US12097869
申请日：2006-07-31
申请人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
发明人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L21/02628 , H01L21/02554 , H01L21/02565 , H01L29/7869
摘要： A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
摘要翻译：半导体膜组合物包括氧化物半导体材料。至少一种多原子离子被结合到氧化物半导体材料中。

3. 发明申请

US20070080428A1 Semiconductor film composition 审中-公开
标题翻译：半导体薄膜组成
公开(公告)号：US20070080428A1
公开(公告)日：2007-04-12
申请号：US11248819
申请日：2005-10-12
申请人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
发明人： Gregory Herman , David Punsalan , Randy Hoffman , Jeremy Anderson , Douglas Keszler , David Blessing
IPC分类号： H01L23/58
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L21/02628 , H01L21/02669
摘要： A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.
摘要翻译：半导体膜组合物包括氧化物半导体材料。至少一种多原子离子被结合到氧化物半导体材料中。

4. 发明申请

US20050242330A1 Dielectric material 有权
标题翻译：介电材料
公开(公告)号：US20050242330A1
公开(公告)日：2005-11-03
申请号：US10837411
申请日：2004-04-30
申请人： Gregory Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
发明人： Gregory Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
IPC分类号： C01G1/00 , C01G1/02 , C01G1/10 , C01G27/00 , C01G27/06 , H01B3/02 , H01B3/12 , H01L21/28 , H01L21/316 , H01L29/51 , C08F10/00 , C08F32/08
CPC分类号： H01B3/12 , C01G1/00 , C01G27/00 , C01G27/06 , C01P2006/40 , H01L21/28194 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.
摘要翻译：介电材料的一个实施例可以包括含金属的阳离子和多原子阴离子。

5. 发明申请

US20130092931A1 THIN FILM TRANSISTORS 有权
标题翻译：薄膜晶体管
公开(公告)号：US20130092931A1
公开(公告)日：2013-04-18
申请号：US13704012
申请日：2010-07-02
申请人： Chris Knutson , Rick Presley , John F. Wager , Douglas Keszler , Randy Hoffman
发明人： Chris Knutson , Rick Presley , John F. Wager , Douglas Keszler , Randy Hoffman
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/786 , H01L27/1225 , H01L29/66742 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.
摘要翻译：薄膜晶体管包括栅电极，设置在栅电极上的栅极电介质，沟道层和钝化层。沟道层具有第一表面和相对的第二表面，其中第一表面设置在栅极电介质的至少一部分上方。沟道层还具有包含至少一个预定阳离子的第一氧化物组合物。钝化层设置成与沟道层的相对的第二表面的至少一部分相邻。钝化层具有第二氧化物组合物，其包含第一氧化物组合物的至少一种预定阳离子和增加钝化层相对于沟道层的带隙的至少一种另外的阳离子。

6. 发明授权

US08669553B2 Thin film transistors 有权
标题翻译：薄膜晶体管
公开(公告)号：US08669553B2
公开(公告)日：2014-03-11
申请号：US13704012
申请日：2010-07-02
申请人： Chris Knutson , Rick Presley , John F. Wager , Douglas Keszler , Randy Hoffman
发明人： Chris Knutson , Rick Presley , John F. Wager , Douglas Keszler , Randy Hoffman
IPC分类号： H01L21/84 , H01L29/12
CPC分类号： H01L29/786 , H01L27/1225 , H01L29/66742 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.
摘要翻译：薄膜晶体管包括栅电极，设置在栅电极上的栅极电介质，沟道层和钝化层。沟道层具有第一表面和相对的第二表面，其中第一表面设置在栅极电介质的至少一部分上方。沟道层还具有包含至少一个预定阳离子的第一氧化物组合物。钝化层设置成与沟道层的相对的第二表面的至少一部分相邻。钝化层具有第二氧化物组合物，其包含第一氧化物组合物的至少一种预定阳离子和增加钝化层相对于沟道层的带隙的至少一种另外的阳离子。

7. 发明授权

US07773365B2 Dielectric material 有权
标题翻译：介电材料
公开(公告)号：US07773365B2
公开(公告)日：2010-08-10
申请号：US10837411
申请日：2004-04-30
申请人： Gregory S. Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
发明人： Gregory S. Herman , Peter Mardilovich , Douglas Keszler , Jeremy Anderson
IPC分类号： H01G4/10 , B05D1/26 , B05D5/12
CPC分类号： H01B3/12 , C01G1/00 , C01G27/00 , C01G27/06 , C01P2006/40 , H01L21/28194 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.
摘要翻译：介电材料的一个实施例可以包括含金属的阳离子和多原子阴离子。

8. 发明申请

US20080043787A1 NONLINEAR OPTICAL CRYSTALS AND THEIR MANUFACTURE AND USE 有权
标题翻译：非线性光学晶体及其制造和使用
公开(公告)号：US20080043787A1
公开(公告)日：2008-02-21
申请号：US11765406
申请日：2007-06-19
申请人： Douglas Keszler , Ning Ye
发明人： Douglas Keszler , Ning Ye
IPC分类号： H01S3/10 , C01B35/18
CPC分类号： C30B9/00 , C09K11/7712 , C30B9/12 , C30B17/00 , C30B29/10 , C30B29/22 , G02F1/3551
摘要： Described are nonlinear optical (NLO) crystals, including aluminum-borate NLO crystals, that have low concentrations of contaminants that adversely affect the NLO crystal's optical properties, such as compounds that contain transition-metal elements and/or lanthanides, other than yttrium, lanthanum, and lutetium. Some NLO crystals with low concentrations of these contaminants are capable of second harmonic generation at very short wavelengths. Also described are embodiments of a method for making these NLO crystals. Some embodiments involve growing a single NLO crystal, such as an aluminum-borate NLO crystal, from a mixture containing a solvent that is substantially free of harmful contaminants. The described NLO crystals can be used, for example, in laser devices.
摘要翻译：描述了非线性光学（NLO）晶体，包括铝 - 硼酸盐NLO晶体，其具有低浓度的污染物，其不利地影响NLO晶体的光学性质，例如包含过渡金属元素和/或镧系元素的化合物，除了钇，镧和镥。一些具有低浓度这些污染物的NLO晶体能够在非常短的波长下产生二次谐波。还描述了制造这些NLO晶体的方法的实施方案。一些实施方案涉及从含有基本上不含有害污染物的溶剂的混合物中生长单个NLO晶体，例如铝 - 硼酸盐NLO晶体。所描述的NLO晶体可以用于例如激光器件中。

9. 发明申请

US20050151131A1 Polycrystalline thin-film solar cells 审中-公开
标题翻译：多晶薄膜太阳能电池
公开(公告)号：US20050151131A1
公开(公告)日：2005-07-14
申请号：US10517728
申请日：2003-06-10
申请人： John Wager , Douglas Keszler
发明人： John Wager , Douglas Keszler
IPC分类号： H01L21/00 , H01L21/304 , H01L29/04 , H01L31/032 , H01L31/0376 , H01L31/0392 , H01L31/0749 , H01L31/075 , H01L31/076
CPC分类号： H01L31/076 , H01L31/0272 , H01L31/0322 , H01L31/0749 , H01L31/075 , Y02E10/541 , Y02E10/548 , Y02P70/521
摘要： Double heterojunction polycrystalline thin-film solar cell devices that include a polycrystalline p-layer, a polycrystalline i-layer, and a polycrystalline n-layer. In one variant, at least two of the p-layer, i-layer, and n-layer comprise a polycrystalline Cu material. In another variant, each of the p-layer, i-layer, and n-layer comprise a common cation or a common anion.
摘要翻译：包括多晶p层，多晶i层和多晶n层的双异质结多晶薄膜太阳能电池器件。在一个变型中，p层，i层和n层中的至少两个包括多晶Cu材料。在另一个变型中，p层，i层和n层中的每一个包含共同的阳离子或共阴离子。

10. 发明申请

US20090095940A1 High quantum yield infranred phosphors and methods of making phosphors 审中-公开
标题翻译：高量子产率的荧光体和磷光体的制备方法
公开(公告)号：US20090095940A1
公开(公告)日：2009-04-16
申请号：US12217582
申请日：2008-07-07
申请人： Richard S. Meltzer , Sergey Feofilov , Yi Zhou , Douglas Keszler , Joayoung Jeong , Weiyi Jia
发明人： Richard S. Meltzer , Sergey Feofilov , Yi Zhou , Douglas Keszler , Joayoung Jeong , Weiyi Jia
IPC分类号： C09K11/61
CPC分类号： C09K11/7773
摘要： Embodiments of the present disclosure include Gd3+—Nd3+ infrared phosphor compositions, methods of making Gd3+—Nd3+ infrared phosphor compositions, and the like.
摘要翻译：本公开的实施方案包括Gd 3+ -N 3+红外荧光体组合物，制备Gd 3+ -N 3+红外荧光体组合物的方法等。

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