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1. 发明授权

US07887711B2 Method for etching chemically inert metal oxides 有权
标题翻译：蚀刻化学惰性金属氧化物的方法
公开(公告)号：US07887711B2
公开(公告)日：2011-02-15
申请号：US10170914
申请日：2002-06-13
申请人： Douglas A. Buchanan , Eduard A. Cartier , Evgeni Gousev , Harald Okorn-Schmidt , Katherine L. Saenger
发明人： Douglas A. Buchanan , Eduard A. Cartier , Evgeni Gousev , Harald Okorn-Schmidt , Katherine L. Saenger
IPC分类号： B44C1/22 , H01L21/00
CPC分类号： H01L21/31122 , Y10S438/924
摘要： A system and method for patterning metal oxide materials in a semiconductor structure. The method comprises a first step of depositing a layer of metal oxide material over a substrate. Then, a patterned mask layer is formed over the metal oxide layer leaving one or more first regions of the metal oxide layer exposed. The exposed first regions of the metal oxide layer are then subjected to an energetic particle bombardment process to thereby damage the first regions of the metal oxide layer. The exposed and damaged first regions of the metal oxide layer are then removed by a chemical etch. Advantageously, the system and method is implemented to provide high-k dielectric materials in small-scale semiconductor devices. Besides using the ion implantation damage (I/I damage) plus wet etch technique to metal oxides (including metal oxides not previously etchable by wet methods), other damage methods including lower energy, plasma-based ion bombardment, may be implemented. Plasma-based ion bombardment typically uses simpler and cheaper tooling, and results in less collateral damage to underlying structures as the damage profile can be more easily localized to the depth of the thin metal oxide film.
摘要翻译：一种在半导体结构中图案化金属氧化物材料的系统和方法。该方法包括在衬底上沉积金属氧化物材料层的第一步骤。然后，在金属氧化物层之上形成图案化掩模层，留下暴露金属氧化物层的一个或多个第一区域。接着对金属氧化物层的暴露的第一区域进行高能粒子轰击处理，从而破坏金属氧化物层的第一区域。然后通过化学蚀刻去除金属氧化物层的暴露和损坏的第一区域。有利地，该系统和方法被实现以在小规模半导体器件中提供高k电介质材料。除了使用离子注入损伤（I / I损伤）以及湿法蚀刻技术对金属氧化物（包括以前不能用湿法蚀刻的金属氧化物）外，还可以实施包括较低能量，基于等离子体的离子轰击等其他损伤方法。基于等离子体的离子轰击通常使用更简单和更便宜的工具，并且导致对下面的结构的较少的附带损伤，因为损伤分布可以更容易地定位于薄金属氧化物膜的深度。

2. 发明授权

US09653328B2 Method and apparatus for surface treatment using inorganic acid and ozone 有权
公开(公告)号：US09653328B2
公开(公告)日：2017-05-16
申请号：US14242601
申请日：2014-04-01
申请人： Harald Okorn-Schmidt , Franz Kumning , Rainer Obweger , Thomas Wirnsberger
发明人： Harald Okorn-Schmidt , Franz Kumning , Rainer Obweger , Thomas Wirnsberger
IPC分类号： B08B3/00 , H01L21/67 , G03F7/42 , H01L21/311
CPC分类号： H01L21/6708 , G03F7/423 , H01L21/31133 , H01L21/67115 , H01L21/6715
摘要： An apparatus for treating a surface of an article includes a chamber for receiving an article to be treated. A dispenser dispenses a treatment liquid including inorganic acid onto the article. A tank stores the treatment liquid. An ozone generator communicates with a supply line entering or exiting the tank to mix ozone with the treatment liquid. A cooler cools the treatment liquid to a subambient temperature in a range of 3° C. to less than 20° C. A heater heats a surface of an article to be treated to a temperature at least 30° C. greater than a temperature of the treatment liquid when applied to the article.

3. 发明授权

US09059000B2 Methods and structures for protecting one area while processing another area on a chip 有权
公开(公告)号：US09059000B2
公开(公告)日：2015-06-16
申请号：US12106586
申请日：2008-04-21
申请人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
发明人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
IPC分类号： H01L21/027 , H01L21/033 , H01L21/311 , G03F7/11
CPC分类号： H01L21/0337 , G03F7/11 , H01L21/027 , H01L21/0332 , H01L21/0334 , H01L21/0338 , H01L21/31144
摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.

4. 发明授权

US08668777B2 Process for treating a semiconductor wafer 有权
标题翻译：处理半导体晶片的方法
公开(公告)号：US08668777B2
公开(公告)日：2014-03-11
申请号：US12976510
申请日：2010-12-22
申请人： Harald Okorn-Schmidt , Dieter Frank , Franz Kumnig
发明人： Harald Okorn-Schmidt , Dieter Frank , Franz Kumnig
IPC分类号： C23G1/02
CPC分类号： H01L21/02052 , C03C23/0075 , C11D7/08 , C11D11/0035 , C11D11/0047 , C11D11/0064 , H01L21/02057
摘要： Mixtures containing concentrated sulfuric acid used for stripping photoresist from semiconductor wafer, such as SOM and SPM mixtures, are more quickly removed from a wafer surface using another liquid also containing high concentration of sulfuric acid, with the second liquid furthermore containing controlled small amounts of fluoride ion. The second liquid renders the wafer surface hydrophobic, which permits easy removal of the sulfuric acid therefrom by spinning and/or rinsing.
摘要翻译：用于从半导体晶片剥离光致抗蚀剂如SOM和SPM混合物的浓硫酸的混合物使用另外还含有高浓度硫酸的液体从晶片表面更快速地除去，第二种液体还含有受控的少量氟化物离子。第二液体使晶片表面疏水，这允许通过旋转和/或漂洗从其中容易地除去硫酸。

5. 发明申请

US20080261128A1 Methods and structures for protecting one area while processing another area on a chip 有权
标题翻译：在处理芯片上的另一个区域时保护一个区域的方法和结构
公开(公告)号：US20080261128A1
公开(公告)日：2008-10-23
申请号：US12106586
申请日：2008-04-21
申请人： Deok-kee Kim , Kenneth T. Settlemyer , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Thimothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
发明人： Deok-kee Kim , Kenneth T. Settlemyer , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Thimothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： H01L21/0337 , G03F7/11 , H01L21/027 , H01L21/0332 , H01L21/0334 , H01L21/0338 , H01L21/31144
摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.
摘要翻译：增加对芯片区域的保护是通过在半导体制造工艺方面具有增强的鲁棒性的掩模结构来提供的，或者可以以相对于下面的材料或两者的增加的选择性和可控性被去除。提供掩模结构，其显示化学反应，颗粒或材料类型的界面，其可被利用以增强任一种或两种类型的保护。这种掩模的结构包括TERA材料，其可以使用氟化氢和吸湿性酸或有机溶剂的混合物以及相似或不同材料的两层结构进行转化或水合并选择性蚀刻。

6. 发明申请

US20070295367A1 Apparatus and Method For Wet Treatment of Wafers 审中-公开
标题翻译：晶圆湿法处理装置及方法
公开(公告)号：US20070295367A1
公开(公告)日：2007-12-27
申请号：US11667698
申请日：2005-11-15
申请人： Harald Okorn-Schmidt
发明人： Harald Okorn-Schmidt
IPC分类号： B08B1/02 , B08B3/00
CPC分类号： H01L21/67051
摘要： Disclosed is a device for wet treatment of disk-like substrates comprising a first plate (10) with a size and shape being able to overlap a disk-like substrate to be treated, holding means (22) for holding a disk-like substrate (W) parallel to said first plate in a s distance of 0.2 to 5 mm, rotating means (37) for rotating the disk-like substrate (W) about a rotation axis (A) substantially perpendicular to said first plate, first dispensing means (14) with a first dispensing opening (16) in the first gap for introducing fluid into a first gap (11) between said first plate (10) and a disk-like substrate (W) when being treated, and shifting means (34) for shifting the position of said first dispensing opening (16) from a first position (P1) to a second position (P2) wherein the distance of said first position (P1) to the rotation axis (A) is smaller than the distance of said second position (P2) to the rotation axis (A). Furthermore an associated method is disclosed.
摘要翻译：公开了一种用于湿处理盘状基板的装置，包括：尺寸和形状能够与待处理的盘状基板重叠的第一板（10），用于保持盘状基板的保持装置（22） W）与所述第一板平行，距离为0.2至5mm;旋转装置（37），用于围绕基本上垂直于所述第一板的旋转轴线（A）旋转所述盘状衬底（W）;第一分配装置（14））在第一间隙中具有第一分配开口（16），用于当被处理时将流体引入到所述第一板（10）和盘状衬底（W）之间的第一间隙（11）中;以及用于将所述第一分配开口（16）的位置从第一位置（P 1）移动到第二位置（P 2），其中所述第一位置（P1）与旋转轴线（A）的距离小于所述距离的所述第二位置（P 2）到所述旋转轴线（A）。此外，公开了一种相关方法。

7. 发明申请

US20050255386A1 METHODS AND STRUCTURES FOR PROTECTING ONE AREA WHILE PROCESSING ANOTHER AREA ON A CHIP 失效
标题翻译：在芯片上处理其他区域时保护一个区域的方法和结构
公开(公告)号：US20050255386A1
公开(公告)日：2005-11-17
申请号：US10709514
申请日：2004-05-11
申请人： Deok-kee Kim , Kenneth Settlemyer , Kangguo Cheng , Ramachandra Divakaruni , Carl Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan Mahorowala , Harald Okorn-Schmidt
发明人： Deok-kee Kim , Kenneth Settlemyer , Kangguo Cheng , Ramachandra Divakaruni , Carl Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan Mahorowala , Harald Okorn-Schmidt
IPC分类号： G03C5/00 , G03F7/11 , G03F9/00 , H01L21/033 , H01L21/311 , H01L21/331
CPC分类号： H01L21/0337 , G03F7/11 , H01L21/027 , H01L21/0332 , H01L21/0334 , H01L21/0338 , H01L21/31144
摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.
摘要翻译：增加对芯片区域的保护是通过在半导体制造工艺方面具有增强的鲁棒性的掩模结构来提供的，或者可以以相对于下面的材料或两者的增加的选择性和可控性被去除。提供掩模结构，其显示化学反应，颗粒或材料类型的界面，其可被利用以增强任一种或两种类型的保护。这种掩模的结构包括TERA材料，其可以使用氟化氢和吸湿性酸或有机溶剂的混合物以及相似或不同材料的两层结构进行转化或水合并选择性蚀刻。

8. 发明授权

US08709165B2 Method and apparatus for surface treatment using inorganic acid and ozone 有权
标题翻译：使用无机酸和臭氧进行表面处理的方法和装置
公开(公告)号：US08709165B2
公开(公告)日：2014-04-29
申请号：US12959924
申请日：2010-12-03
申请人： Harald Okorn-Schmidt , Franz Kumning , Rainer Obweger , Thomas Wirnsberger
发明人： Harald Okorn-Schmidt , Franz Kumning , Rainer Obweger , Thomas Wirnsberger
IPC分类号： B08B7/00
CPC分类号： H01L21/6708 , G03F7/423 , H01L21/31133 , H01L21/67115 , H01L21/6715
摘要： Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by dissolving gaseous ozone into relatively cool inorganic acid, dispensing the acid ozone mixture onto a wafer, and rapidly heating the surface of the wafer to a temperature at least 30° C. higher than the temperature of the acid ozone mixture.
摘要翻译：通过将气态臭氧溶解在相对较冷的无机酸中，将酸性臭氧混合物分配到晶片上，并将晶片的表面快速加热到晶片表面的温度来实现在单晶片前端湿处理站中改进离子注入的光刻胶的去除比酸臭氧混合物的温度高30℃。

9. 发明授权

US07497959B2 Methods and structures for protecting one area while processing another area on a chip 失效
标题翻译：在处理芯片上的另一个区域时保护一个区域的方法和结构
公开(公告)号：US07497959B2
公开(公告)日：2009-03-03
申请号：US10709514
申请日：2004-05-11
申请人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
发明人： Deok-kee Kim , Kenneth T. Settlemyer, Jr. , Kangguo Cheng , Ramachandra Divakaruni , Carl J. Radens , Dirk Pfeiffer , Timothy Dalton , Katherina Babich , Arpan P. Mahorowala , Harald Okorn-Schmidt
IPC分类号： H01B3/00 , H01L21/31 , H01L49/00
CPC分类号： H01L21/0337 , G03F7/11 , H01L21/027 , H01L21/0332 , H01L21/0334 , H01L21/0338 , H01L21/31144
摘要： Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.
摘要翻译：增加对芯片区域的保护是通过在半导体制造工艺方面具有增强的鲁棒性的掩模结构来提供的，或者可以以相对于下面的材料或两者的增加的选择性和可控性被去除。提供掩模结构，其显示化学反应，颗粒或材料类型的界面，其可被利用以增强任一种或两种类型的保护。这种掩模的结构包括TERA材料，其可以使用氟化氢和吸湿性酸或有机溶剂的混合物以及相似或不同材料的两层结构进行转化或水合并选择性蚀刻。

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