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1. 发明授权

US5746897A High magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition 失效
标题翻译：高磁通永磁体阵列装置及高生产率物理气相沉积方法
公开(公告)号：US5746897A
公开(公告)日：1998-05-05
申请号：US677956
申请日：1996-07-10
申请人： Dorian Heimanson , Mehrdad M. Moslehi , Paul E. Spronz , Thomas R. Omstead
发明人： Dorian Heimanson , Mehrdad M. Moslehi , Paul E. Spronz , Thomas R. Omstead
IPC分类号： C23C14/35 , H01F7/02 , H01J37/34
CPC分类号： H01J37/3426 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A high magnetic flux permanent magnet array apparatus and method for high productivity physical vapor deposition includes a magnetron array with a plurality of magnet assemblies disposed proximate to a target. Each assembly comprises a first portion magnetized perpendicularly to the target, a second portion magnetized perpendicularly to the target and opposite the first portion, and a third portion positioned intermediate the first and second portions, the third portion magnetized parallel to the target.
摘要翻译：用于高生产率物理气相沉积的高磁通永磁体阵列装置和方法包括具有靠近目标设置的多个磁体组件的磁控管阵列。每个组件包括垂直于靶标磁化的第一部分，垂直于靶并相对于第一部分磁化的第二部分，以及位于第一和第二部分之间的第三部分，第三部分平行于靶标磁化。

2. 发明授权

US5876573A High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition 失效
标题翻译：高磁通阴极装置和高生产率物理气相沉积方法
公开(公告)号：US5876573A
公开(公告)日：1999-03-02
申请号：US677951
申请日：1996-07-10
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。背板的厚度减小，并且对产生的磁场提供较少的屏障。

3. 发明授权

US06221217B1 Physical vapor deposition system having reduced thickness backing plate 有权
标题翻译：物理气相沉积系统具有减小厚度的背板
公开(公告)号：US06221217B1
公开(公告)日：2001-04-24
申请号：US09205113
申请日：1998-12-03
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C1434
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. In one embodiment, the backing plate includes a center post to support the backing plate during operation. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控管溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。在一个实施例中，背板包括在操作期间支撑背板的中心柱。背板的厚度减小，并且对产生的磁场提供较少的屏障。

4. 发明授权

US6039848A Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. 失效
标题翻译：超高真空装置和高生产率物理气相沉积方法。
公开(公告)号：US6039848A
公开(公告)日：2000-03-21
申请号：US958877
申请日：1997-10-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
IPC分类号： C23C14/35 , C23C14/56 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/564
摘要： A magnetron sputtering system is provided that uses a backing plate assembly having an insulating spacer ring coupled between and hermetically sealed to the backing plate and an extender ring. The insulating spacer ring can be constructed from a ceramic material, and the extender ring can be constructed from a metal material. The use of this backing plate assembly allows the backing plate assembly to be coupled directly to the chamber walls with a metal-to-metal contact, while the backing plate remains electrically isolated from the chamber walls. This allows the sealing of a vacuum chamber in the magnetron sputtering system using a seal suitable for creating an ultra-high vacuum in the vacuum chamber.
摘要翻译：提供了一种磁控溅射系统，其使用背板组件，该背板组件具有联接在背衬板和延伸环之间并与气垫密封的绝缘间隔环。绝缘间隔环可以由陶瓷材料构成，并且增量环可以由金属材料构成。使用该背板组件允许背板组件通过金属对金属接触直接耦合到室壁，而背板保持与室壁电隔离。这允许使用适于在真空室中产生超高真空的密封来密封磁控溅射系统中的真空室。

5. 发明授权

US6126790A Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet 有权
标题翻译：用多线圈电磁铁磁性取向薄磁膜的方法
公开(公告)号：US6126790A
公开(公告)日：2000-10-03
申请号：US499144
申请日：2000-02-07
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译：电磁体组件磁性地定向沉积在基底表面上的薄磁膜。磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。

6. 发明授权

US6042707A Multiple-coil electromagnet for magnetically orienting thin films 失效
标题翻译：用于磁取向薄膜的多线圈电磁铁
公开(公告)号：US6042707A
公开(公告)日：2000-03-28
申请号：US83363
申请日：1998-05-22
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00 , C14C14/35
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译：电磁体组件磁性地定向沉积在基底表面上的薄磁膜。磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。

7. 发明授权

US06645847B2 Microelectronic interconnect material with adhesion promotion layer and fabrication method 失效
公开(公告)号：US06645847B2
公开(公告)日：2003-11-11
申请号：US10060548
申请日：2002-01-30
申请人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Boris Relja , Randhir S. Bubber , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , David M. Leet , Sanjay Gopinath
发明人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Boris Relja , Randhir S. Bubber , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , David M. Leet , Sanjay Gopinath
IPC分类号： H01L214763
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys for promoting adhesion of copper. The barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.

8. 发明授权

US06190732B1 Method and system for dispensing process gas for fabricating a device on a substrate 失效
标题翻译：用于分配用于在衬底上制造器件的工艺气体的方法和系统
公开(公告)号：US06190732B1
公开(公告)日：2001-02-20
申请号：US09146486
申请日：1998-09-03
申请人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
发明人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
IPC分类号： C23C1634
CPC分类号： C23C16/45565 , C23C16/4408 , C23C16/4412 , C23C16/45521 , C23C16/45589 , C23C16/4585 , Y10S438/905
摘要： A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing. The present invention enhance throughput of device formation by reducing purge and process cycle times.
摘要翻译：一种用工艺气体（例如化学气相沉积）在衬底上制造器件的方法和系统。反应室和支撑卡盘配合以形成用于轴向测量工艺气体流过衬底的低电导结构，并且形成高电导配置，以在工艺完成时增强从反应室抽出残余工艺气体。双电导卡盘具有与反应室的排气口对准的缩进区域，以限制低导电构造中的工艺气体流动，并且在喷头和排气口的远端移动以减少对反应室的工艺气体流量的限制疏散。卡盘包括用于增强基板上的膜沉积并减少卡盘上的残留膜沉积的热控制。壳体中的排气开口可以从壳体中独立排出残留气体。本发明通过减少吹扫和处理循环时间来增强器件形成的生产能力。

9. 发明授权

US06692575B1 Apparatus for supporting a substrate in a reaction chamber 失效
标题翻译：用于在反应室中支撑基底的装置
公开(公告)号：US06692575B1
公开(公告)日：2004-02-17
申请号：US09484821
申请日：2000-01-18
申请人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
发明人： Thomas R. Omstead , Panya Wongsenakhum , William J. Messner , Edward J. Nagy , William Starks , Mehrdad M. Moslehi
IPC分类号： C23C1646
CPC分类号： C23C16/45565 , C23C16/4408 , C23C16/4412 , C23C16/45521 , C23C16/45589 , C23C16/4585 , Y10S438/905
摘要： A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing. The present invention enhance throughput of device formation by reducing purge and process cycle times.
摘要翻译：一种用工艺气体（例如化学气相沉积）在衬底上制造器件的方法和系统。反应室和支撑卡盘配合以形成用于轴向测量工艺气体流过衬底的低电导结构，并且形成高电导配置，以在工艺完成时增强从反应室抽出残余工艺气体。双电导卡盘具有与反应室的排气口对准的缩进区域，以限制低导电构造中的工艺气体流动，并且在喷头和排气口的远端移动以减少对反应室的工艺气体流量的限制疏散。卡盘包括用于增强基板上的膜沉积并减少卡盘上的残留膜沉积的热控制。壳体中的排气开口可以从壳体中独立排出残留气体。本发明通过减少吹扫和处理循环时间来增强器件形成的生产能力。

10. 发明授权

US06461675B2 Method for forming a copper film on a substrate 失效
标题翻译：在基板上形成铜膜的方法
公开(公告)号：US06461675B2
公开(公告)日：2002-10-08
申请号：US09113852
申请日：1998-07-10
申请人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , Zeming Liu , Guihua Shang
发明人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , Zeming Liu , Guihua Shang
IPC分类号： C23C1606
CPC分类号： H01L21/76858 , C23C16/0209 , C23C16/0245 , C23C16/0281 , C23C16/18 , H01L21/76843 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： Adhesion of a copper film, such as a copper interconnect, to a substrate underlayer, such as a substrate diffusion barrier, is enhanced with adhesion promotion techniques. The adhesion promotion techniques can repair the interface of the copper film and the substrate to enhance adhesion of the copper film for high-yield formation of inlaid copper metal lines and plugs. For instance, thermal annealing of a seed layer, including a copper seed layer, an alloy seed layer or a reactant seed layer, can repair contamination at the interface of the seed layer and the substrate. Alternatively, the adhesion promotion techniques can avoid contamination of the interface by depositing an inert seed layer, such as a noble (e.g., platinum) or passivated metal seed layer, or by depositing the seed layer under predetermined conditions that minimize contamination of the interface, and then depositing a bulk copper layer under predetermined conditions that maximize throughput. Alternatively, the adhesion promotion techniques can avoid the formation of an interface by graduated deposition of a first material and copper.
摘要翻译：通过粘合促进技术增强铜膜如铜互连对衬底底层（例如衬底扩散阻挡层）的粘合性。粘合促进技术可以修复铜膜和基材的界面，以增强铜膜的粘附性，从而高收率地形成嵌入的铜金属线和插塞。例如，种子层（包括铜籽晶层，合金种子层或反应物种子层）的热退火可以修复种子层和基底的界面处的污染。或者，粘合促进技术可以避免通过沉积惰性种子层（例如贵金属（例如铂）或钝化金属种子层）或通过在限制界面的污染最小化的预定条件下沉积籽晶层来污染界面，然后在允许生产量最大化的预定条件下沉积大块铜层。或者，粘合促进技术可以避免通过第一材料和铜的分级沉积形成界面。

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