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1. 发明专利

JP2006077241A Etching liquid composition for indium oxide-based transparent conductive film and etching method using the composition 有权
标题翻译：用于基于氧化物的透明导电膜的蚀刻液体组合物和使用该组合物的蚀刻方法
公开(公告)号：JP2006077241A
公开(公告)日：2006-03-23
申请号：JP2005243577
申请日：2005-08-25
申请人： Dongwoo Fine-Chem Co Ltd , Samsung Electronics Co Ltd , サムスンエレクトロニクスカンパニーリミテッド , 東友ファインケム株式会社
发明人： CHO HONG JE , LEE SEUNG-YONG , RI SHUNU , LEE JAE-YEON , CHON SEUNG-HWAN , CHOI YONG-SUK , PARK YOUNG-CHUL , KIM JIN-SU , KIM KYU-SANG , CHOI DONG-UK , RIN KANTAKU
IPC分类号： C09K13/04 , C09K13/06 , H01B13/00 , H01L21/306 , H01L21/3213
CPC分类号： C09K13/06
摘要： PROBLEM TO BE SOLVED: To provide an etching liquid composition improving the reproducibility of the selection ratio[an indicator representing the influence on films other than IZO film or ITO film, being the ratio of (the etching level of IZO film or ITO film):(the etching level of the other films)] and the etching step in etching an indium oxide-based transparent electrically conductive film laminated on e.g. the substrate of an electronic part, free of fume generation, and high in stability to temperature, and to provide an etching method for IZO film and ITO film.
SOLUTION: The etching liquid composition for indium oxide-based transparent conductive film comprises sulfuric acid as the main oxidizing agent, a compound selected from H
3 PO
4 , HNO
3 , CH
3 COOH, HClO
4 , H
2 O
2 and salts including potassium peroxomonosulfate, potassium bisulfate and potassium sulfate as an auxiliary oxidizing agent, a compound containing NH
4
+ as etching inhibitor, and water.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供提高选择比的再现性的蚀刻液组合物[表示对IZO膜或ITO膜以外的膜的影响的指标，（IZO膜或ITO的蚀刻水平的比例膜）（其他膜的蚀刻水平）]和蚀刻步骤，蚀刻层叠在例如氧化铟系透明导电膜上电子部件的基板，不产生烟雾，并且对温度的稳定性高，并为IZO膜和ITO膜提供蚀刻方法。解决方案：用于氧化铟基透明导电膜的蚀刻液体组合物包括硫酸作为主要氧化剂，选自H 3 SB 3 PO 4，S / CH 3，CH 3，COOH，HClO 4，SB 3，H SB 2，SO 2和/ 包括硫酸钾钾，硫酸氢钾和硫酸钾作为辅助氧化剂，含有作为蚀刻抑制剂的NH SP> + / SP的化合物和水。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004063459A Backlight assembly and liquid crystal display device using the same 审中-公开
公开(公告)号：JP2004063459A
公开(公告)日：2004-02-26
申请号：JP2003161733
申请日：2003-06-06
申请人： Samsung Electronics Co Ltd , サムスンエレクトロニクスカンパニーリミテッドSamsung Electronics Company,Limited
发明人： RI KONU , PARK JONG-DAE , BANG CHANG-YOUNG , LEE TAE-JIN , LEE JAE-SANG , LEE JEONG HWAN , JUNG JAE-HO , CHOI YONG-SUK
IPC分类号： F21S2/00 , F21S4/00 , F21S8/04 , F21Y103/00 , G02F1/13357
CPC分类号： G02F1/133604 , G02F1/133605 , G02F2001/133613
摘要： PROBLEM TO BE SOLVED: To provide a backlight assembly and a liquid crystal display device using the same.
SOLUTION: A display with high quality can be embodied by minimizing a gap between a lamp and an optical plate as well as an observation of a bright line by the lamp on the outside of the optical plate, with a precise adjustment of a pitch of the lamp for applying a light necessary for the display and of a gap from the lamp to the optical plate placed on an upper face of the lamp.
COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2004127912A Liquid crystal display device equipped with noise cutoff means 有权
公开(公告)号：JP2004127912A
公开(公告)日：2004-04-22
申请号：JP2003156373
申请日：2003-06-02
申请人： Samsung Electronics Co Ltd , サムスンエレクトロニクスカンパニーリミテッドSamsung Electronics Company,Limited
发明人： LEE JEONG HWAN , PARK JONG-DAE , CHOI YONG-SUK , LEE TAE-JIN , HAN BYUNG-WOONG
IPC分类号： G02F1/1333 , F21S2/00 , F21V23/00 , F21Y103/00 , G02F1/13 , G02F1/13357
CPC分类号： G02F1/133608 , G02F1/133604 , G02F1/133605 , G02F2001/133317 , G02F2001/133334 , G02F2001/133612 , G02F2201/46
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal display device equipped with a noise cutoff means. SOLUTION: This noise cutoff means is formed by a transparent film coated with a transparent conductive film, and is formed by dispersing a transparent conductive substance on an optical sheet. ITO and IZO are used for the transparent conductive substance. The noise cutoff means can be positioned between diffusion plates and the optical sheets, and can be positioned in the lower part of a LCD panel. Therefore, noise generated from a power source supplied to a back light assembly is cut off from the LCD panel. The noise cutoff means and the optical sheet are brought into contact with the chassis of the LCD display device by various grounding means. Therefore, the noise cutoff means and the optical sheet are stabilized by grounding them. Thereby, display quality of the LCD device can be enhanced. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004055531A Backlight assembly and liquid crystal display utilizing the same 有权
公开(公告)号：JP2004055531A
公开(公告)日：2004-02-19
申请号：JP2003146168
申请日：2003-05-23
申请人： Samsung Electronics Co Ltd , サムスンエレクトロニクスカンパニーリミテッドSamsung Electronics Company,Limited
发明人： LEE TAE-JIN , PARK JONG-DAE , LEE JEONG HWAN , RI KONU , LEE JAE-SANG , CHOI YONG-SUK , BANG CHANG-YOUNG
IPC分类号： F21S2/00 , F21S4/00 , F21S8/04 , F21Y103/00 , G02F1/13357
CPC分类号： G02F1/133604
摘要： PROBLEM TO BE SOLVED: To provide a backlight assembly suitable for an enlarged liquid crystal display and a liquid crystal display capable of displaying with a uniform luminance and a low power consumption even with an increased display area.
SOLUTION: At least two sub lamps 210 are arranged in series, and a luminance control unit 400 for reducing non-uniformity of luminance is provided between the sub lamp 210 and the sub lamp 210. Thereby, a sub lamp 210 shorter than the screen size of the liquid crystal display can be used. Since a short sub lamp 210 is used, a drive voltage required for using the sub lamp 210 can be lowered and power consumption can be reduced, and further, it has an effect of greatly increasing even the uniformity of luminance.
COPYRIGHT: (C)2004,JPO

5. 发明申请

WO2011021860A9 METHOD OF FABRICATING ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY 审中-公开
标题翻译：制造液晶显示器阵列基板的方法
公开(公告)号：WO2011021860A9
公开(公告)日：2011-08-11
申请号：PCT/KR2010005484
申请日：2010-08-19
申请人： DONGWOO FINE CHEM CO LTD , LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
发明人： LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
IPC分类号： G02F1/136
CPC分类号： H01L27/124
摘要： Disclosed is a method of fabricating an array substrate for a liquid crystal display, including forming a copper-based metal layer on a substrate and etching the copper-based metal layer using an etchant composition thus forming gate wiring, and forming a copper-based metal layer on a semiconductor layer and etching the copper-based metal layer using the etchant composition thus forming source/drain electrodes, the etchant composition including based on the total weight of the composition, A) 5.0 ~ 25 wt% of hydrogen peroxide (H2O2), B) 0.01 ~ 1.0 wt% of a fluorine-containing compound, C) 0.1 ~ 5.0 wt% of an azole compound, D) 0.1 ~ 10.0 wt% of one or more compounds selected from among phosphonic acid derivatives and salts thereof, and E) a remainder of water.
摘要翻译：公开了一种制造用于液晶显示器的阵列基板的方法，包括在基板上形成铜基金属层并使用由此形成栅极布线的蚀刻剂组合物蚀刻铜基金属层，并形成铜基金属层，并使用蚀刻剂组合物蚀刻铜基金属层，从而形成源/漏电极，蚀刻剂组合物基于组合物的总重量包括A）5.0〜25重量％的过氧化氢（H 2 O 2），B）0.01〜1.0重量％的含氟化合物，C）0.1〜5.0重量％的唑类化合物，D）0.1〜10.0重量％的一种或多种选自膦酸衍生物及其盐的化合物，以及 E）剩余的水。

6. 发明申请

WO2011021860A3 METHOD OF FABRICATING ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY 审中-公开
标题翻译：制造用于液晶显示器的阵列基板的方法
公开(公告)号：WO2011021860A3
公开(公告)日：2011-06-16
申请号：PCT/KR2010005484
申请日：2010-08-19
申请人： DONGWOO FINE CHEM CO LTD , LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
发明人： LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
IPC分类号： G02F1/136
CPC分类号： H01L27/124
摘要： Disclosed is a method of fabricating an array substrate for a liquid crystal display, including forming a copper-based metal layer on a substrate and etching the copper-based metal layer using an etchant composition thus forming gate wiring, and forming a copper-based metal layer on a semiconductor layer and etching the copper-based metal layer using the etchant composition thus forming source/drain electrodes, the etchant composition including based on the total weight of the composition, A) 5.0 ~ 25 wt% of hydrogen peroxide (H2O2), B) 0.01 ~ 1.0 wt% of a fluorine-containing compound, C) 0.1 ~ 5.0 wt% of an azole compound, D) 0.1 ~ 10.0 wt% of one or more compounds selected from among phosphonic acid derivatives and salts thereof, and E) a remainder of water.
摘要翻译：公开了一种制造用于液晶显示器的阵列基板的方法，包括在基板上形成铜基金属层，并使用蚀刻剂组合物蚀刻铜基金属层，由此形成栅极布线，并且形成铜基金属在蚀刻剂组合物上蚀刻铜基金属层，由此形成源极/漏极电极，蚀刻剂组合物包括基于组合物总重量的A）5.0-25重量％的过氧化氢（H 2 O 2），B）0.01〜1.0重量％的含氟化合物，C）0.1〜5.0重量％的唑类化合物，D）0.1〜10.0重量％的选自膦酸衍生物及其盐中的1种或2种以上的化合物， E）余下的水。

7. 发明申请

WO2011010879A3 METHOD FOR FABRICATING AN ARRAY SUBSTRATE FOR A LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：制造用于液晶显示装置的阵列基板的方法
公开(公告)号：WO2011010879A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004815
申请日：2010-07-22
申请人： DONGWOO FINE CHEM CO LTD , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN , LEE HYUN-KYU , LEE WOO-RAM
发明人： CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN , LEE HYUN-KYU , LEE WOO-RAM
IPC分类号： G02F1/136
CPC分类号： C23F1/18 , G02F2001/136295
摘要： The present invention relates to a method for fabricating an array substrate for a liquid crystal display device, using an etchant composition for a copper-based metal film, wherein the etchant composition comprises, based on the total weight of the etchant composition: a) 2 to 30 wt % of hydrogen peroxide (H2O2); b) 0.1 to 5 wt % of nitric acid (HNO3); c) 0.01 to 1.0 wt % of a fluorine compound; d) 0.1 to 5 wt % of an azole compound; e) 0.1 to 8.0 wt % of an imidazole compound; and f) the remainder being water.
摘要翻译：本发明涉及一种使用用于铜基金属膜的蚀刻剂组合物制造用于液晶显示装置的阵列基板的方法，其中蚀刻剂组合物包含基于蚀刻剂组合物的总重量：a）2 至30重量％的过氧化氢（H 2 O 2）; b）0.1至5重量％的硝酸（HNO 3）; c）0.01至1.0重量％的氟化合物; d）0.1-5重量％的唑类化合物; e）0.1至8.0重量％的咪唑化合物; 和f）其余部分是水。

8. 发明专利

JP2004193620A Etching solution for removing molybdenum residue from copper molybdenum film, and etching method therefore 有权
公开(公告)号：JP2004193620A
公开(公告)日：2004-07-08
申请号：JP2003412068
申请日：2003-12-10
申请人： Dongwoo Fine-Chem Co Ltd , Lg Phillips Lcd Co Ltd , エルジー.フィリップスエルシーデーカンパニー,リミテッド , ドンウーファイン−ケムカンパニーリミテッド
发明人： KIM SEONG-SU , CHOI YONG-SUK , CHAE GEE-SUNG , JO GYOO CHUL , KWON OH-NAM , LEE KYOUNG-MOOK , HWANG YONG-SUP , LEE SEUNG-YONG
IPC分类号： H01L21/306 , B44C1/22 , C23F1/18 , C23F1/26 , C23F1/30 , G02F1/1365 , H01L21/308 , H01L21/3213 , H01L21/336 , H01L29/786
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , H01L21/32134
摘要： PROBLEM TO BE SOLVED: To provide an etching solution for removing molybdenum residues from a copper molybdenum film and an etching method therefore.
SOLUTION: An etching solution for a copper single film or a copper molybdenum film composed of a first additive and a second additive containing a hydrogen peroxide, an organic acid, phosphate, and nitrogen (N), a fluorine compound and deionized water is provided. Specifically, the etching solution for the copper single film or the copper molybdenum film composed of the first additive and the second additive containing 5% by weight to 30% by weight of the hydrogen peroxide, 0.5% by weight to 5% by weight of the organic acid, 0.2% by weight to 5% by weight of phosphate, 0.2% by weight or 5% by weight of nitrogen (N) and containing 0.01% by weight to 1.0% by weight of the fluorine compound based on the total weight of the composition and the deionized water, and an etching method therefore are provided.
COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2008010868A Nonvolatile memory device having vertical channel and manufacturing method of the same 审中-公开
标题翻译：具有垂直通道的非易失性存储器件及其制造方法
公开(公告)号：JP2008010868A
公开(公告)日：2008-01-17
申请号：JP2007163103
申请日：2007-06-20
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： YANG SEUNG-JIN , HAN JEONG-UK , CHOI YONG-SUK , KWON HYOK-KI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11582
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor flash memory cell pair having a vertical channel.
SOLUTION: A semiconductor flash memory cell pair includes a semiconductor substrate; first and second source lines formed in the semiconductor substrate; a semiconductor pillar extended from the semiconductor substrate between the first and second source lines; first and second charge storage structures formed on the facing surfaces of the semiconductor pillar and operating together with the first and second source lines; first and second trench structures formed adjacent to the semiconductor pillar and electrically separating the first and second charge storage structures; a first word line formed adjacent to the first charge storage structure; a second word line formed adjacent to the second charge storage structure; and a common drain contact formed on an upper surface of the semiconductor pillar.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有垂直通道的半导体闪存单元对。解决方案：半导体闪存单元对包括半导体衬底; 形成在半导体衬底中的第一和第二源极线; 在所述第一和第二源极线之间从所述半导体衬底延伸的半导体柱; 第一和第二电荷存储结构，形成在半导体柱的相对表面上并与第一和第二源极线一起操作; 第一和第二沟槽结构，形成在与半导体柱相邻并且电分离第一和第二电荷存储结构; 与第一电荷存储结构相邻形成的第一字线; 与第二电荷存储结构相邻形成的第二字线; 以及形成在半导体柱的上表面上的公共漏极接触。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2005268804A Split gate-type nonvolatile semiconductor memory device and manufacturing method of same 有权
标题翻译：分离栅型非易失性半导体存储器件及其制造方法
公开(公告)号：JP2005268804A
公开(公告)日：2005-09-29
申请号：JP2005077986
申请日：2005-03-17
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEON HEE-SEOG , YOON SEUNG-BEOM , KIN RYUTAI , CHOI YONG-SUK
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/336 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/513 , H01L29/7881
摘要： PROBLEM TO BE SOLVED: To provide a split gate-type nonvolatile semiconductor memory device and a manufacturing method of the same.
SOLUTION: A gate insulating layer and a floating gate conductive layer are formed on a semiconductor substrate, a mask layer pattern is formed, a first sacrifice spacer is formed on both walls thereof, an inter-gate insulating layer is formed on the floating gate insulating conductive layer, the first sacrifice spacer is removed, etching is performed on the floating gate conductive layer with the mask layer pattern and inter-gate insulating layer as the masks, a tunneling insulating layer is formed on an exposed portion thereof, a control gate conductive layer is formed on the entire surface of the semiconductor substrate, a second sacrifice spacer is formed thereon, etching is performed on the control gate conductive layer with it as a mask to form the control gate, and etching is performed on the remaining mask layer pattern, inter-gate insulating layer and exposed floating gate conductive layer to form the floating gate.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种分离式栅型非易失性半导体存储器件及其制造方法。解决方案：在半导体衬底上形成栅极绝缘层和浮栅导电层，形成掩模层图案，在其两个壁上形成第一牺牲隔离物，在栅极绝缘层上形成栅极间绝缘层浮置栅极绝缘导电层，去除第一牺牲间隔物，以掩模层图案和栅极间绝缘层为掩模对浮栅导电层进行蚀刻，在其暴露部分上形成隧道绝缘层，控制栅极导电层形成在半导体衬底的整个表面上，在其上形成第二牺牲衬垫，以控制栅极导电层作为掩模进行蚀刻，形成控制栅极，并对剩余的栅极进行蚀刻掩模层图案，栅极间绝缘层和暴露的浮栅导电层以形成浮栅。版权所有（C）2005，JPO＆NCIPI

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