专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011021860A9 METHOD OF FABRICATING ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY 审中-公开
标题翻译：制造液晶显示器阵列基板的方法
公开(公告)号：WO2011021860A9
公开(公告)日：2011-08-11
申请号：PCT/KR2010005484
申请日：2010-08-19
申请人： DONGWOO FINE CHEM CO LTD , LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
发明人： LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
IPC分类号： G02F1/136
CPC分类号： H01L27/124
摘要： Disclosed is a method of fabricating an array substrate for a liquid crystal display, including forming a copper-based metal layer on a substrate and etching the copper-based metal layer using an etchant composition thus forming gate wiring, and forming a copper-based metal layer on a semiconductor layer and etching the copper-based metal layer using the etchant composition thus forming source/drain electrodes, the etchant composition including based on the total weight of the composition, A) 5.0 ~ 25 wt% of hydrogen peroxide (H2O2), B) 0.01 ~ 1.0 wt% of a fluorine-containing compound, C) 0.1 ~ 5.0 wt% of an azole compound, D) 0.1 ~ 10.0 wt% of one or more compounds selected from among phosphonic acid derivatives and salts thereof, and E) a remainder of water.
摘要翻译：公开了一种制造用于液晶显示器的阵列基板的方法，包括在基板上形成铜基金属层并使用由此形成栅极布线的蚀刻剂组合物蚀刻铜基金属层，并形成铜基金属层，并使用蚀刻剂组合物蚀刻铜基金属层，从而形成源/漏电极，蚀刻剂组合物基于组合物的总重量包括A）5.0〜25重量％的过氧化氢（H 2 O 2），B）0.01〜1.0重量％的含氟化合物，C）0.1〜5.0重量％的唑类化合物，D）0.1〜10.0重量％的一种或多种选自膦酸衍生物及其盐的化合物，以及 E）剩余的水。

2. 发明申请

WO2011021860A3 METHOD OF FABRICATING ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY 审中-公开
标题翻译：制造用于液晶显示器的阵列基板的方法
公开(公告)号：WO2011021860A3
公开(公告)日：2011-06-16
申请号：PCT/KR2010005484
申请日：2010-08-19
申请人： DONGWOO FINE CHEM CO LTD , LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
发明人： LEE HYUN-KYU , LEE WOO-RAM , JUNG KYUNG-SUB , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN
IPC分类号： G02F1/136
CPC分类号： H01L27/124
摘要： Disclosed is a method of fabricating an array substrate for a liquid crystal display, including forming a copper-based metal layer on a substrate and etching the copper-based metal layer using an etchant composition thus forming gate wiring, and forming a copper-based metal layer on a semiconductor layer and etching the copper-based metal layer using the etchant composition thus forming source/drain electrodes, the etchant composition including based on the total weight of the composition, A) 5.0 ~ 25 wt% of hydrogen peroxide (H2O2), B) 0.01 ~ 1.0 wt% of a fluorine-containing compound, C) 0.1 ~ 5.0 wt% of an azole compound, D) 0.1 ~ 10.0 wt% of one or more compounds selected from among phosphonic acid derivatives and salts thereof, and E) a remainder of water.
摘要翻译：公开了一种制造用于液晶显示器的阵列基板的方法，包括在基板上形成铜基金属层，并使用蚀刻剂组合物蚀刻铜基金属层，由此形成栅极布线，并且形成铜基金属在蚀刻剂组合物上蚀刻铜基金属层，由此形成源极/漏极电极，蚀刻剂组合物包括基于组合物总重量的A）5.0-25重量％的过氧化氢（H 2 O 2），B）0.01〜1.0重量％的含氟化合物，C）0.1〜5.0重量％的唑类化合物，D）0.1〜10.0重量％的选自膦酸衍生物及其盐中的1种或2种以上的化合物， E）余下的水。

3. 发明申请

WO2011010879A3 METHOD FOR FABRICATING AN ARRAY SUBSTRATE FOR A LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：制造用于液晶显示装置的阵列基板的方法
公开(公告)号：WO2011010879A3
公开(公告)日：2011-04-21
申请号：PCT/KR2010004815
申请日：2010-07-22
申请人： DONGWOO FINE CHEM CO LTD , CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN , LEE HYUN-KYU , LEE WOO-RAM
发明人： CHOI YONG-SUK , LEE SUK , YOON YOUNG-JIN , LEE HYUN-KYU , LEE WOO-RAM
IPC分类号： G02F1/136
CPC分类号： C23F1/18 , G02F2001/136295
摘要： The present invention relates to a method for fabricating an array substrate for a liquid crystal display device, using an etchant composition for a copper-based metal film, wherein the etchant composition comprises, based on the total weight of the etchant composition: a) 2 to 30 wt % of hydrogen peroxide (H2O2); b) 0.1 to 5 wt % of nitric acid (HNO3); c) 0.01 to 1.0 wt % of a fluorine compound; d) 0.1 to 5 wt % of an azole compound; e) 0.1 to 8.0 wt % of an imidazole compound; and f) the remainder being water.
摘要翻译：本发明涉及一种使用用于铜基金属膜的蚀刻剂组合物制造用于液晶显示装置的阵列基板的方法，其中蚀刻剂组合物包含基于蚀刻剂组合物的总重量：a）2 至30重量％的过氧化氢（H 2 O 2）; b）0.1至5重量％的硝酸（HNO 3）; c）0.01至1.0重量％的氟化合物; d）0.1-5重量％的唑类化合物; e）0.1至8.0重量％的咪唑化合物; 和f）其余部分是水。

4. 发明专利

JP2006077241A Etching liquid composition for indium oxide-based transparent conductive film and etching method using the composition 有权
标题翻译：用于基于氧化物的透明导电膜的蚀刻液体组合物和使用该组合物的蚀刻方法
公开(公告)号：JP2006077241A
公开(公告)日：2006-03-23
申请号：JP2005243577
申请日：2005-08-25
申请人： Dongwoo Fine-Chem Co Ltd , Samsung Electronics Co Ltd , サムスンエレクトロニクスカンパニーリミテッド , 東友ファインケム株式会社
发明人： CHO HONG JE , LEE SEUNG-YONG , RI SHUNU , LEE JAE-YEON , CHON SEUNG-HWAN , CHOI YONG-SUK , PARK YOUNG-CHUL , KIM JIN-SU , KIM KYU-SANG , CHOI DONG-UK , RIN KANTAKU
IPC分类号： C09K13/04 , C09K13/06 , H01B13/00 , H01L21/306 , H01L21/3213
CPC分类号： C09K13/06
摘要： PROBLEM TO BE SOLVED: To provide an etching liquid composition improving the reproducibility of the selection ratio[an indicator representing the influence on films other than IZO film or ITO film, being the ratio of (the etching level of IZO film or ITO film):(the etching level of the other films)] and the etching step in etching an indium oxide-based transparent electrically conductive film laminated on e.g. the substrate of an electronic part, free of fume generation, and high in stability to temperature, and to provide an etching method for IZO film and ITO film.
SOLUTION: The etching liquid composition for indium oxide-based transparent conductive film comprises sulfuric acid as the main oxidizing agent, a compound selected from H
3 PO
4 , HNO
3 , CH
3 COOH, HClO
4 , H
2 O
2 and salts including potassium peroxomonosulfate, potassium bisulfate and potassium sulfate as an auxiliary oxidizing agent, a compound containing NH
4
+ as etching inhibitor, and water.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供提高选择比的再现性的蚀刻液组合物[表示对IZO膜或ITO膜以外的膜的影响的指标，（IZO膜或ITO的蚀刻水平的比例膜）（其他膜的蚀刻水平）]和蚀刻步骤，蚀刻层叠在例如氧化铟系透明导电膜上电子部件的基板，不产生烟雾，并且对温度的稳定性高，并为IZO膜和ITO膜提供蚀刻方法。解决方案：用于氧化铟基透明导电膜的蚀刻液体组合物包括硫酸作为主要氧化剂，选自H 3 SB 3 PO 4，S / CH 3，CH 3，COOH，HClO 4，SB 3，H SB 2，SO 2和/ 包括硫酸钾钾，硫酸氢钾和硫酸钾作为辅助氧化剂，含有作为蚀刻抑制剂的NH SP> + / SP的化合物和水。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2004193620A Etching solution for removing molybdenum residue from copper molybdenum film, and etching method therefore 有权
公开(公告)号：JP2004193620A
公开(公告)日：2004-07-08
申请号：JP2003412068
申请日：2003-12-10
申请人： Dongwoo Fine-Chem Co Ltd , Lg Phillips Lcd Co Ltd , エルジー.フィリップスエルシーデーカンパニー,リミテッド , ドンウーファイン−ケムカンパニーリミテッド
发明人： KIM SEONG-SU , CHOI YONG-SUK , CHAE GEE-SUNG , JO GYOO CHUL , KWON OH-NAM , LEE KYOUNG-MOOK , HWANG YONG-SUP , LEE SEUNG-YONG
IPC分类号： H01L21/306 , B44C1/22 , C23F1/18 , C23F1/26 , C23F1/30 , G02F1/1365 , H01L21/308 , H01L21/3213 , H01L21/336 , H01L29/786
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , H01L21/32134
摘要： PROBLEM TO BE SOLVED: To provide an etching solution for removing molybdenum residues from a copper molybdenum film and an etching method therefore.
SOLUTION: An etching solution for a copper single film or a copper molybdenum film composed of a first additive and a second additive containing a hydrogen peroxide, an organic acid, phosphate, and nitrogen (N), a fluorine compound and deionized water is provided. Specifically, the etching solution for the copper single film or the copper molybdenum film composed of the first additive and the second additive containing 5% by weight to 30% by weight of the hydrogen peroxide, 0.5% by weight to 5% by weight of the organic acid, 0.2% by weight to 5% by weight of phosphate, 0.2% by weight or 5% by weight of nitrogen (N) and containing 0.01% by weight to 1.0% by weight of the fluorine compound based on the total weight of the composition and the deionized water, and an etching method therefore are provided.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明申请

WO2010036030A3 LIGHT EMITTING DIODE USING ZINC OXIDE-BASED ELECTRODES AND A FABRICATION METHOD THEREOF 审中-公开
标题翻译：使用基于氧化锌的电极的发光二极管及其制造方法
公开(公告)号：WO2010036030A3
公开(公告)日：2010-07-01
申请号：PCT/KR2009005434
申请日：2009-09-23
申请人： KWANGJU INST SCI & TECH , PARK SEONG-JU , PARK TAE-YOUNG , OH MIN-SUK , CHOI YONG-SUK , KANG JANG-WON
发明人： PARK SEONG-JU , PARK TAE-YOUNG , OH MIN-SUK , CHOI YONG-SUK , KANG JANG-WON
IPC分类号： H01L33/40
CPC分类号： H01L33/42 , H01L33/22 , H01L33/32 , H01L2933/0091
摘要： Disclosed are a light emitting diode using zinc oxide-based electrodes with improved electrical properties and a fabrication method thereof. In one embodiment of the present invention, a light emitting diode comprises a luminous structure having a first semiconductor layer, an active layer and a second semiconductor layer disposed sequentially on a base substrate; and a current spreading layer disposed on an upper face of the luminous structure, the current spreading layer having a zinc oxide-based thin film and zinc oxide-based nanorods protruding from the zinc oxide-based thin film. Furthermore, a fabrication method of a light emitting diode comprises the steps of: forming a luminous structure having a first semiconductor layer, an active layer and a second semiconductor layer disposed sequentially on a base substrate; and forming a current spreading layer on an upper face of the luminous structure by a MOCVD growth method to form a zinc oxide-based thin film and zinc oxide-based nanorods protruding from the zinc oxide-based thin film.
摘要翻译：公开了一种使用具有改进的电性能的氧化锌基电极的发光二极管及其制造方法。在本发明的一个实施例中，发光二极管包括具有依次设置在基底基板上的第一半导体层，有源层和第二半导体层的发光结构; 以及配置在发光体的上表面的电流扩散层，所述电流扩散层具有氧化锌系薄膜和从所述氧化锌系薄膜突出的氧化锌系纳米棒。此外，发光二极管的制造方法包括以下步骤：形成具有依次设置在基底基板上的第一半导体层，有源层和第二半导体层的发光体; 通过MOCVD生长法在发光体的上面形成电流扩散层，形成从氧化锌系薄膜突出的氧化锌系薄膜和氧化锌系纳米棒。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式