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1. 发明授权

US08723290B2 Electrical fuse device 失效
标题翻译：电熔丝装置
公开(公告)号：US08723290B2
公开(公告)日：2014-05-13
申请号：US13471508
申请日：2012-05-15
申请人： Dong-suk Shin , Andrew-Tae Kim , Hong-jae Shin
发明人： Dong-suk Shin , Andrew-Tae Kim , Hong-jae Shin
IPC分类号： H01L23/525 , H01L27/112
CPC分类号： H01L23/5256 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.
摘要翻译：本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。

2. 发明申请

US20110284988A1 ELECTRICAL FUSE DEVICE 失效
标题翻译：电保险装置
公开(公告)号：US20110284988A1
公开(公告)日：2011-11-24
申请号：US13193637
申请日：2011-07-29
申请人： Dong-suk Shin , Andrew-tae Kim , Hong-jae Shin
发明人： Dong-suk Shin , Andrew-tae Kim , Hong-jae Shin
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.
摘要翻译：本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。

3. 发明授权

US08013420B2 Electrical fuse device 失效
标题翻译：电熔丝装置
公开(公告)号：US08013420B2
公开(公告)日：2011-09-06
申请号：US12203256
申请日：2008-09-03
申请人： Dong-suk Shin , Andrew-tae Kim , Hong-jae Shin
发明人： Dong-suk Shin , Andrew-tae Kim , Hong-jae Shin
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.
摘要翻译：本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。

4. 发明授权

US08198702B2 Electrical fuse device 失效
标题翻译：电熔丝装置
公开(公告)号：US08198702B2
公开(公告)日：2012-06-12
申请号：US13193637
申请日：2011-07-29
申请人： Dong-suk Shin , Andrew-Tae Kim , Hong-jae Shin
发明人： Dong-suk Shin , Andrew-Tae Kim , Hong-jae Shin
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current densities in a fuse link. In one respect, there is provided an electrical fuse device that includes: an anode; a fuse link coupled to the anode on a first side of the fuse link; a cathode coupled to the fuse link on a second side of the fuse link; a first cathode contact coupled to the cathode; and a first anode contact coupled to the anode, at least one of the first cathode contact and the first anode contact being disposed across a virtual extending surface of the fuse link.
摘要翻译：本发明一般涉及半导体器件的熔丝器件，更具体地，涉及一种半导体器件的电熔丝器件。本发明的实施例提供一种能够减少由熔丝链中的不均匀电流密度引起的编程误差的熔丝装置。在一方面，提供一种电熔丝装置，其包括：阳极; 熔丝链路，其在所述熔丝连接件的第一侧上耦合到所述阳极; 连接到所述熔丝链的第二侧上的所述熔断体的阴极; 耦合到阴极的第一阴极接触; 以及耦合到所述阳极的第一阳极触点，所述第一阴极触点和所述第一阳极触点中的至少一个跨越所述熔断体的虚拟延伸表面设置。

5. 发明授权

US08237202B2 Semiconductor devices including dehydrogenated interlayer dielectric layers 有权
标题翻译：包括脱氢层间电介质层的半导体器件
公开(公告)号：US08237202B2
公开(公告)日：2012-08-07
申请号：US12987415
申请日：2011-01-10
申请人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
发明人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
IPC分类号： H01L27/118
CPC分类号： H01L21/823807 , H01L21/76801 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/823864 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first interlayer dielectric layer may change a stress of the first interlayer dielectric layer. In particular, the first interlayer dielectric layer may have a tensile stress of 200 MPa or more after dehydrogenization. Semiconductor devices including dehydrogenated interlayer dielectric layers are also provided.
摘要翻译：制造半导体器件的方法包括在半导体衬底上形成NMOS晶体管，在NMOS晶体管上形成第一层间电介质层，并使第一层间电介质层脱氢。使第一层间电介质层脱氢可以改变第一层间电介质层的应力。特别地，第一层间电介质层可以在脱氢后具有200MPa以上的拉伸应力。还提供了包括脱氢层间电介质层的半导体器件。

6. 发明申请

US20110163386A1 Semiconductor Devices Including Dehydrogenated Interlayer Dielectric Layers 有权
标题翻译：包括脱氢层间电介质层的半导体器件
公开(公告)号：US20110163386A1
公开(公告)日：2011-07-07
申请号：US12987415
申请日：2011-01-10
申请人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
发明人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
IPC分类号： H01L27/092 , H01L29/51
CPC分类号： H01L21/823807 , H01L21/76801 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/823864 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first interlayer dielectric layer may change a stress of the first interlayer dielectric layer. In particular, the first interlayer dielectric layer may have a tensile stress of 200 MPa or more after dehydrogenization. Semiconductor devices including dehydrogenated interlayer dielectric layers are also provided.
摘要翻译：制造半导体器件的方法包括在半导体衬底上形成NMOS晶体管，在NMOS晶体管上形成第一层间电介质层，并使第一层间电介质层脱氢。使第一层间电介质层脱氢可以改变第一层间电介质层的应力。特别地，第一层间电介质层可以在脱氢后具有200MPa以上的拉伸应力。还提供了包括脱氢层间电介质层的半导体器件。

7. 发明授权

US07888749B2 Semiconductor devices having selectively tensile stressed gate electrodes and methods of fabricating the same 有权
标题翻译：具有选择性拉伸应力栅电极的半导体器件及其制造方法
公开(公告)号：US07888749B2
公开(公告)日：2011-02-15
申请号：US11752370
申请日：2007-05-23
申请人： Dong-suk Shin , Andrew Tae Kim , Yong-kuk Jeong
发明人： Dong-suk Shin , Andrew Tae Kim , Yong-kuk Jeong
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L21/823828 , H01L21/7624 , H01L21/823807 , H01L21/823878 , H01L29/6656 , H01L29/66636 , H01L29/7843 , H01L29/7846
摘要： A semiconductor device includes an active region. A gate electrode is disposed on the active region. An isolation region adjoins the active region, and is recessed with respect to a top surface of the active region underlying the gate electrode. The isolation region may be recessed a depth substantially equal to a height of the gate electrode. In some embodiments, the gate electrode is configured to support current flow through the active region along a first direction, and a tensile stress layer covers the gate electrode and is configured to apply a tensile stress to the gate electrode along a second direction perpendicular to the first direction. The tensile stress layer may cover the recessed isolation region and portions of the active region between the isolation region and the gate electrode. In further embodiments, an interlayer insulating film is disposed on the tensile stress layer and is configured to apply a tensile stress to the gate electrode along the second direction.
摘要翻译：半导体器件包括有源区。栅电极设置在有源区上。隔离区域邻接有源区，并且相对于栅电极下方的有源区的顶表面凹陷。隔离区域可以凹入基本上等于栅电极的高度的深度。在一些实施例中，栅电极被配置为支持沿着第一方向流过有源区的电流，并且拉伸应力层覆盖栅电极，并且构造成沿垂直于第二方向的第二方向向栅电极施加拉伸应力第一个方向拉伸应力层可以覆盖凹陷的隔离区域和隔离区域和栅电极之间的有源区域的部分。在另外的实施例中，层间绝缘膜设置在拉伸应力层上，并被构造成沿着第二方向向栅电极施加拉伸应力。

8. 发明申请

US20080023769A1 Semiconductor Devices Having Selectively Tensile Stressed Gate Electrodes and Methods of Fabricating the Same 有权
标题翻译：具有选择性拉伸的栅极电极的半导体器件及其制造方法
公开(公告)号：US20080023769A1
公开(公告)日：2008-01-31
申请号：US11752370
申请日：2007-05-23
申请人： Dong-suk Shin , Andrew Tae Kim , Yong-kuk Jeong
发明人： Dong-suk Shin , Andrew Tae Kim , Yong-kuk Jeong
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L21/823828 , H01L21/7624 , H01L21/823807 , H01L21/823878 , H01L29/6656 , H01L29/66636 , H01L29/7843 , H01L29/7846
摘要： A semiconductor device includes an active region. A gate electrode is disposed on the active region. An isolation region adjoins the active region, and is recessed with respect to a top surface of the active region underlying the gate electrode. The isolation region may be recessed a depth substantially equal to a height of the gate electrode. In some embodiments, the gate electrode is configured to support current flow through the active region along a first direction, and a tensile stress layer covers the gate electrode and is configured to apply a tensile stress to the gate electrode along a second direction perpendicular to the first direction. The tensile stress layer may cover the recessed isolation region and portions of the active region between the isolation region and the gate electrode. In further embodiments, an interlayer insulating film is disposed on the tensile stress layer and is configured to apply a tensile stress to the gate electrode along the second direction.
摘要翻译：半导体器件包括有源区。栅电极设置在有源区上。隔离区域邻接有源区，并且相对于栅电极下方的有源区的顶表面凹陷。隔离区域可以凹入基本上等于栅电极的高度的深度。在一些实施例中，栅电极被配置为支持沿着第一方向流过有源区的电流，并且拉伸应力层覆盖栅电极，并且构造成沿垂直于第二方向的第二方向向栅电极施加拉伸应力第一个方向拉伸应力层可以覆盖凹陷的隔离区域和隔离区域和栅电极之间的有源区域的部分。在另外的实施例中，层间绝缘膜设置在拉伸应力层上，并被构造成沿着第二方向向栅电极施加拉伸应力。

9. 发明申请

US20070105297A1 Semiconductor devices and methods of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070105297A1
公开(公告)日：2007-05-10
申请号：US11593898
申请日：2006-11-07
申请人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
发明人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
IPC分类号： H01L21/8234
CPC分类号： H01L21/823807 , H01L21/76801 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/823864 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first interlayer dielectric layer may change a stress of the first interlayer dielectric layer. In particular, the first interlayer dielectric layer may have a tensile stress of 200 MPa or more after dehydrogenization. Semiconductor devices including dehydrogenated interlayer dielectric layers are also provided.
摘要翻译：制造半导体器件的方法包括在半导体衬底上形成NMOS晶体管，在NMOS晶体管上形成第一层间电介质层，并使第一层间电介质层脱氢。使第一层间电介质层脱氢可以改变第一层间电介质层的应力。特别地，第一层间电介质层可以在脱氢后具有200MPa以上的拉伸应力。还提供了包括脱氢层间电介质层的半导体器件。

10. 发明授权

US07867867B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07867867B2
公开(公告)日：2011-01-11
申请号：US11593898
申请日：2006-11-07
申请人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
发明人： Yong-kuk Jeong , Andrew-tae Kim , Dong-suk Shin
IPC分类号： H01L21/336
CPC分类号： H01L21/823807 , H01L21/76801 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/823864 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： Methods of manufacturing a semiconductor device include forming an NMOS transistor on a semiconductor substrate, forming a first interlayer dielectric layer on the NMOS transistor, and dehydrogenating the first interlayer dielectric layer. Dehydrogenating the first interlayer dielectric layer may change a stress of the first interlayer dielectric layer. In particular, the first interlayer dielectric layer may have a tensile stress of 200 MPa or more after dehydrogenization. Semiconductor devices including dehydrogenated interlayer dielectric layers are also provided.
摘要翻译：制造半导体器件的方法包括在半导体衬底上形成NMOS晶体管，在NMOS晶体管上形成第一层间电介质层，并使第一层间电介质层脱氢。使第一层间电介质层脱氢可以改变第一层间电介质层的应力。特别地，第一层间电介质层可以在脱氢后具有200MPa以上的拉伸应力。还提供了包括脱氢层间电介质层的半导体器件。

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