专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07868452B2 Ultrathin semiconductor circuit having contact bumps 有权
标题翻译：具有接触凸块的超薄半导体电路
公开(公告)号：US07868452B2
公开(公告)日：2011-01-11
申请号：US11441978
申请日：2006-05-26
申请人： Dirk Mueller , Manfred Schneegans , Sokratis Sgouridis
发明人： Dirk Mueller , Manfred Schneegans , Sokratis Sgouridis
IPC分类号： H01L23/48 , H01L23/485
CPC分类号： H01L24/05 , H01L23/5258 , H01L23/562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04042 , H01L2224/05018 , H01L2224/05026 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/01047 , H01L2924/01074 , H01L2924/00012 , H01L2224/05552 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.
摘要翻译：本发明涉及一种具有接触凸点和相应制造方法的超薄半导体电路。半导体电路包括具有支撑层厚度并具有用于露出形成在半导体电路的表面上的接触层元件的支撑层开口的凸块支撑层。电极层位于触点支撑层的开口内的接触层元件的表面上，电极层形成有用于实现接触凸块的突起金属化。由于凸起支撑层，可以将半导体电路的厚度减薄到远低于300微米，从而可靠地防止晶片断裂。此外，由此提高了半导体电路的防潮性。

2. 发明授权

US08735277B2 Methods for producing an ultrathin semiconductor circuit 有权
标题翻译：用于制造超薄半导体电路的方法
公开(公告)号：US08735277B2
公开(公告)日：2014-05-27
申请号：US12877577
申请日：2010-09-08
申请人： Dirk Mueller , Manfred Schneegans , Sokratis Sgouridis
发明人： Dirk Mueller , Manfred Schneegans , Sokratis Sgouridis
IPC分类号： H01L23/48 , H01L23/485
CPC分类号： H01L24/05 , H01L23/5258 , H01L23/562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04042 , H01L2224/05018 , H01L2224/05026 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/01047 , H01L2924/01074 , H01L2924/00012 , H01L2224/05552 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.
摘要翻译：本发明涉及一种具有接触凸点和相应制造方法的超薄半导体电路。半导体电路包括具有支撑层厚度并具有用于露出形成在半导体电路的表面上的接触层元件的支撑层开口的凸块支撑层。电极层位于触点支撑层的开口内的接触层元件的表面上，电极层形成有用于实现接触凸块的突起金属化。由于凸起支撑层，可以将半导体电路的厚度减薄到远低于300微米，从而可靠地防止晶片断裂。此外，由此提高了半导体电路的防潮性。

3. 发明申请

US20060292849A1 Ultrathin semiconductor circuit having contact bumps and corresponding production method 有权
标题翻译：具有接触凸块的超薄半导体电路及相应的制造方法
公开(公告)号：US20060292849A1
公开(公告)日：2006-12-28
申请号：US11441978
申请日：2006-05-26
申请人： Dirk Mueller , Manfred Schneegans , Sokratis Sgouridis
发明人： Dirk Mueller , Manfred Schneegans , Sokratis Sgouridis
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L24/05 , H01L23/5258 , H01L23/562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04042 , H01L2224/05018 , H01L2224/05026 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/01047 , H01L2924/01074 , H01L2924/00012 , H01L2224/05552 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.
摘要翻译：本发明涉及一种具有接触凸点和相应制造方法的超薄半导体电路。半导体电路包括具有支撑层厚度并具有用于露出形成在半导体电路的表面上的接触层元件的支撑层开口的凸块支撑层。电极层位于触点支撑层的开口内的接触层元件的表面上，电极层形成有用于实现接触凸块的突起金属化。由于凸起支撑层，可以将半导体电路的厚度减薄到远低于300微米，从而可靠地防止晶片断裂。此外，由此提高了半导体电路的防潮性。

4. 发明申请

US20100330744A1 ULTRATHIN SEMICONDUCTOR CIRCUIT HAVING CONTACT BUMPS AND CORRESPONDING PRODUCTION METHOD 有权
标题翻译：具有接触焊料的超薄半导体电路和相应的生产方法
公开(公告)号：US20100330744A1
公开(公告)日：2010-12-30
申请号：US12877577
申请日：2010-09-08
申请人： Dirk Muller , Manfred Schneegans , Sokratis Sgouridis
发明人： Dirk Muller , Manfred Schneegans , Sokratis Sgouridis
IPC分类号： H01L21/3205 , H01L21/78 , H01L21/50
CPC分类号： H01L24/05 , H01L23/5258 , H01L23/562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/48 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/04042 , H01L2224/05018 , H01L2224/05026 , H01L2224/05082 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05571 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0105 , H01L2924/01052 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/01047 , H01L2924/01074 , H01L2924/00012 , H01L2224/05552 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.
摘要翻译：本发明涉及一种具有接触凸点和相应制造方法的超薄半导体电路。半导体电路包括具有支撑层厚度并具有用于露出形成在半导体电路的表面上的接触层元件的支撑层开口的凸块支撑层。电极层位于触点支撑层的开口内的接触层元件的表面上，电极层形成有用于实现接触凸块的突起金属化。由于凸起支撑层，可以将半导体电路的厚度减薄到远低于300微米，从而可靠地防止晶片断裂。此外，由此提高了半导体电路的防潮性。

5. 发明授权

US08709876B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US08709876B2
公开(公告)日：2014-04-29
申请号：US13610268
申请日：2012-09-11
申请人： Manfred Schneegans , Holger Torwesten
发明人： Manfred Schneegans , Holger Torwesten
IPC分类号： H01L21/00
CPC分类号： H01L23/53238 , H01L24/03 , H01L2224/0361 , H01L2224/03912 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/11906 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/05042 , H01L2924/19042 , H01L2924/00014
摘要： An electronic device is disclosed. In one embodiment, the electronic device includes a substrate, a plurality of conducting lines formed on a first conducting material that is disposed on the substrate, and a layer of a second conducting material disposed on the plurality of conducting lines. The conducting lines include a top face and a side face. The layer of the second conducting material includes a first thickness disposed on each of the top faces and a second thickness disposed on each of the side faces. To this end, the first thickness is greater than the second thickness.
摘要翻译：公开了一种电子设备。在一个实施例中，电子设备包括衬底，形成在设置在衬底上的第一导电材料上的多条导电线和设置在多条导线上的第二导电材料层。导线包括顶面和侧面。第二导电材料的层包括设置在每个顶面上的第一厚度和设置在每个侧面上的第二厚度。为此，第一厚度大于第二厚度。

6. 发明授权

US08156643B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08156643B2
公开(公告)日：2012-04-17
申请号：US13008928
申请日：2011-01-19
申请人： Manfred Schneegans , Markus Leicht , Stefan Woehlert , Edmund Riedl
发明人： Manfred Schneegans , Markus Leicht , Stefan Woehlert , Edmund Riedl
IPC分类号： H01L21/58
CPC分类号： H01L24/85 , H01L24/45 , H01L24/48 , H01L2224/05611 , H01L2224/37147 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45611 , H01L2224/45647 , H01L2224/48091 , H01L2224/48227 , H01L2224/4847 , H01L2224/48475 , H01L2224/48611 , H01L2224/48711 , H01L2224/48799 , H01L2224/85051 , H01L2224/85205 , H01L2224/85411 , H01L2224/85815 , H01L2224/85825 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/15747 , H01L2924/19042 , H01L2924/20751 , Y10T29/49144 , H01L2924/00014 , H01L2924/00 , H01L2224/48811 , H01L2924/013 , H01L2924/01006
摘要： A method of electrically interconnecting a semiconductor chip to another electronic device including providing a carrier including contact pins and a chip attached to the carrier, the chip having a copper contact pad that faces away from the carrier, extending a copper electrical connector between the contact pins and the contact pad, and diffusion soldering the copper electrical connector to the active area with a solder material including tin to form a solder connection including a contiguous bronze coating disposed between and in direct contact with both the copper electrical connector and the contact pad.
摘要翻译：一种将半导体芯片电连接到另一个电子设备的方法，包括提供包括接触引脚和附接到载体的芯片的载体，所述芯片具有背离载体的铜接触焊盘，在接触引脚之间延伸铜电连接器以及接触焊盘，并且使用包括锡的焊料材料将铜电连接器扩散焊接到有源区域，以形成包括布置在铜电连接器和接触焊盘两者之间并且与铜电连接器和接触焊盘两者直接接触的连续青铜镀层的焊料连接。

7. 发明申请

US20110269073A1 METHOD FOR APPLYING A RESIST LAYER, USES OF ADHESIVE MATERIALS, AND ADHESIVE MATERIALS AND RESIST LAYER 有权
标题翻译：耐腐蚀层的使用方法，粘合材料的使用以及粘合材料和耐腐蚀层
公开(公告)号：US20110269073A1
公开(公告)日：2011-11-03
申请号：US13178710
申请日：2011-07-08
申请人： Werner Krõninger , Manfred Schneegans
发明人： Werner Krõninger , Manfred Schneegans
IPC分类号： G03F7/004
CPC分类号： G03F7/32 , G03F7/16 , G03F7/161 , G03F7/34
摘要： A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.
摘要翻译：公开了将抗蚀剂层施加到基底层的方法。抗蚀剂层包括粘合剂材料，并且粘合剂材料的粘合力在照射过程中降低或增加。可以使用所公开的方法剥离抗蚀剂层的残留物。

8. 发明授权

US07911026B2 Chip carrier with reduced interference signal sensitivity 有权
标题翻译：具有降低干扰信号灵敏度的芯片载体
公开(公告)号：US07911026B2
公开(公告)日：2011-03-22
申请号：US11618172
申请日：2006-12-29
申请人： Florian Binder , Thomas Haneder , Judith Lehmann , Manfred Schneegans , Grit Sommer
发明人： Florian Binder , Thomas Haneder , Judith Lehmann , Manfred Schneegans , Grit Sommer
IPC分类号： H01L21/02
CPC分类号： H01L23/49827 , H01L23/50 , H01L23/66 , H01L2223/6616 , H01L2224/05026 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/0102 , H01L2924/09701 , H01L2924/15311 , H05K1/162 , H05K3/4602 , H01L2224/05599
摘要： Carrier including: a substrate having a first interface with first contact holes, and a second interface, which lies opposite the first interface, with second contact holes. The substrate includes a substrate body and electrically conductive contact channels formed therein, wherein each of the contact channels electrically conductively connects a first contact hole to a second contact hole. The carrier also includes a front-side wiring layer arranged on the first interface and; has a first front-side metallization layer formed therein such that it includes a first capacitor electrode for electrically connecting microelectronic devices and/or circuits to a first pole of a signal or supply voltage. The first capacitor electrode, at least partly via a capacitor dielectric formed in the carrier, couples capacitively to electrically conductive regions of a second front-side metallization layer and/or the substrate which at least partly form a second capacitor electrode for electrically connecting the microelectronic devices and/or circuits to a second pole of the signal or supply voltage.
摘要翻译：载体包括：具有与第一接触孔的第一界面的基底和与第一界面相对的第二界面与第二接触孔。基板包括基板主体和形成在其中的导电接触通道，其中每个接触通道将第一接触孔电连接到第二接触孔。载体还包括布置在第一界面上的前侧布线层，具有形成在其中的第一前侧金属化层，使得其包括用于将微电子器件和/或电路电连接到信号或电源电压的第一极的第一电容器电极。至少部分地经由形成在载体中的电容器电介质的第一电容器电极电容耦合到第二前侧金属化层和/或衬底的导电区域，该区域至少部分地形成第二电容器电极，用于电连接微电子设备和/或电路连接到信号或电源电压的第二极点。

9. 发明授权

US07674689B2 Method of making an integrated circuit including singulating a semiconductor wafer 有权
标题翻译：制造包括单片化半导体晶片的集成电路的方法
公开(公告)号：US07674689B2
公开(公告)日：2010-03-09
申请号：US11858437
申请日：2007-09-20
申请人： Manfred Schneegans , Werner Kroninger
发明人： Manfred Schneegans , Werner Kroninger
IPC分类号： H01L21/46
CPC分类号： H01L21/78
摘要： A method of making an integrated circuit includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, at least one of the first surface and the second surface including a metallization layer deposited onto the surface. The method additionally includes forming a first trench in the semiconductor wafer extending from one of the first surface and the second surface toward an other of the first surface and the second surface. The method further includes sawing a second trench in the other surface until the second trench communicates with the first trench, thus singulating the integrated circuit from the semiconductor wafer.
摘要翻译：制造集成电路的方法包括提供具有第一表面和与第一表面相对的第二表面的半导体晶片，第一表面和第二表面中的至少一个包括沉积在表面上的金属化层。该方法还包括在半导体晶片中形成从第一表面和第二表面中的一个向第一表面和第二表面中的另一个延伸的第一沟槽。该方法还包括锯切另一表面中的第二沟槽，直到第二沟槽与第一沟槽连通，从而从半导体晶片分离集成电路。

10. 发明申请

US20080305428A1 METHOD FOR APPLYING A RESIST LAYER, USES OF ADHESIVE MATERIALS, AND ADHESIVE MATERIALS AND RESIST LAYER 有权
标题翻译：耐腐蚀层的使用方法，粘合材料的使用以及粘合材料和耐腐蚀层
公开(公告)号：US20080305428A1
公开(公告)日：2008-12-11
申请号：US11943145
申请日：2007-11-20
申请人： Werner Kroninger , Manfred Schneegans
发明人： Werner Kroninger , Manfred Schneegans
IPC分类号： G03F7/11
CPC分类号： G03F7/32 , G03F7/16 , G03F7/161 , G03F7/34
摘要： A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.
摘要翻译：公开了将抗蚀剂层施加到基底层的方法。抗蚀剂层包括粘合剂材料，并且粘合剂材料的粘合力在照射过程中降低或增加。可以使用所公开的方法剥离抗蚀剂层的残留物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式