专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008235592A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008235592A
公开(公告)日：2008-10-02
申请号：JP2007073320
申请日：2007-03-20
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： AKAGI NOZOMI , TAKAHASHI SHIGEKI , NAKANO TAKASHI , HIGUCHI YASUSHI , FUJII TETSUO , HATSUTORI YOSHIKUNI , KUWABARA MAKOTO
IPC分类号： H01L21/8234 , H01L21/822 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/78 , H01L29/786
CPC分类号： H01L29/7817 , H01L27/0738 , H01L29/0696 , H01L29/41758 , H01L29/42368 , H01L29/435 , H01L29/4933 , H01L29/7824 , H01L29/7835
摘要： PROBLEM TO BE SOLVED: To provide a small and low-cost semiconductor device especially using a lateral MOS transistor which can perform high-speed switching by which overshoot of drain voltage can be reduced and increase in noise and switching loss can be suppressed.
SOLUTION: The semiconductor device 100 is made by forming the lateral MOS transistor 21 on the surface layer of a semiconductor substrate 10. A polycrystal silicon resistor 50 of conductivity opposite to the drain (D) of the lateral MOS transistor 21 is interposed in a gate driving signal line of the lateral MOS transistor 21. Drain voltage of the lateral MOS transistor 21 is applied to the polycrystal silicon resistor 50 through an insulating film 4.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种小型和低成本的半导体器件，特别是使用可以进行能够降低漏极电压的过冲并且可以抑制噪声和开关损耗增加的高速开关的横向MOS晶体管。解决方案：半导体器件100通过在半导体衬底10的表面层上形成横向MOS晶体管21制成。与横向MOS晶体管21的漏极（D）相反的导电性的多晶硅电阻器50被插入在横向MOS晶体管21的栅极驱动信号线中。横向MOS晶体管21的漏极电压通过绝缘膜4施加到多晶硅电阻器50上。（C）2009，JPO＆INPIT

2. 发明专利

JP2008060468A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2008060468A
公开(公告)日：2008-03-13
申请号：JP2006237766
申请日：2006-09-01
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： TAKAHASHI SHIGEKI , NAKANO TAKASHI , AKAGI NOZOMI , HIGUCHI YASUSHI , FUJII TETSUO , HATSUTORI YOSHIKUNI , KUWABARA MAKOTO , OKADA KYOKO
IPC分类号： H01L27/06 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L29/78 , H01L29/786
CPC分类号： H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/42356 , H01L29/42368 , H01L29/4238 , H01L29/7817 , H01L29/7821
摘要： PROBLEM TO BE SOLVED: To provide a compact and inexpensive semiconductor device which is suitable for configuration of a switching circuit, and wherein a lateral MOS transistor capable of fast switching is formed and switching loss and surge voltage (noise) can be suppressed at the same time. SOLUTION: In the semiconductor device, the lateral MOS transistor LTa, a Zener diode ZDa and a capacitance element Ca are formed on a surface layer part of a semiconductor substrate. The Zener diode ZDa and the capacitance element Ca are directly connected between a drain D and a gate G of the lateral MOS transistor LTa, thereby the semiconductor device 101 is constituted. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供适合于配置开关电路的紧凑且便宜的半导体器件，并且其中形成能够快速切换的横向MOS晶体管，并且可以抑制开关损耗和浪涌电压（噪声）与此同时。解决方案：在半导体器件中，横向MOS晶体管LTa，齐纳二极管ZDa和电容元件Ca形成在半导体衬底的表面层部分上。齐纳二极管ZDa和电容元件Ca直接连接在横向MOS晶体管LTa的漏极D和栅极G之间，从而构成半导体器件101。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2012049499A Semiconductor device and control method thereof 有权
标题翻译：半导体器件及其控制方法
公开(公告)号：JP2012049499A
公开(公告)日：2012-03-08
申请号：JP2011027994
申请日：2011-02-11
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： NISHIZUMI HIROTAKA , YAMAMOTO TAKESHI , MIZUNO SHOJI , SUMITOMO MASAKIYO , SAKAKIBARA JUN , FUJII TETSUO , HATTORI YOSHIKUNI , TAGUCHI RIE , KUWABARA MAKOTO
IPC分类号： H01L29/78 , H01L21/336 , H01L27/04 , H01L29/423 , H01L29/49 , H01L29/739 , H01L29/861
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having such a structure with which self turn-on due to noise does not take place easily and in which recovery loss can be reduced.SOLUTION: A gate electrode 8 has a double gate structure with first and second gate electrodes 8a, 8b of different depth. With such a structure, an inversion layer is formed for a p-type base region 3 by turning only the first gate electrode 8a out of the first and second gate electrodes 8a, 8b, but the inversion layer may be formed not deep enough to connect an ntype drift layer 2 and an n-type impurity region 4. The first gate electrode 8a functions as an excessive carrier injection inhibition gate.
摘要翻译：要解决的问题：提供一种具有这样的结构的半导体器件，由于噪声而导致的自身接通不容易发生，并且可以降低恢复损耗。解决方案：栅电极8具有双栅极结构，其具有不同深度的第一和第二栅电极8a，8b。通过这样的结构，通过仅使第一和第二栅极电极8a，8b中的第一栅极电极8a转动而形成p型基极区域3的反转层，但是反转层可以形成得不够深以连接类型漂移层2和n + 型杂质区域4.第一栅电极8a起过量作用载流子注入抑制栅极。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2003021565A Electrical capacitance type pressure sensor, method of manufacturing the same and sensor structure body used for the same 有权
标题翻译：电容式压力传感器，其制造方法和用于其的传感器结构体
公开(公告)号：JP2003021565A
公开(公告)日：2003-01-24
申请号：JP2001206688
申请日：2001-07-06
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： SUZUKI YASUTOSHI , ISHIO SEIICHIRO , FUJII TETSUO , SHIMAOKA KEIICHI , FUNABASHI HIROBUMI
IPC分类号： G01L9/12 , G01L9/00 , G01L13/06 , H01L29/84
CPC分类号： G01L9/0073
摘要： PROBLEM TO BE SOLVED: To reduce the area of a lower electrode and to prevent drops in the sensitivity of an electrical capacitance type pressure sensor, which detects an applied pressure on the basis of a change in a capacitance across the lower electrode and an movable electrode displacing due to the application of a pressure.
SOLUTION: The electrical capacitance type pressure sensor is provided with a substrate 10, the lower electrode 30 which is formed on one face of the substrate 10, the diaphragm-like movable electrode 40 which is formed on the lower electrode 30 through a cavity part 61 and an opening 11, which is formed in the substrate 10 and which reaches the lower electrode 30 from the outside on the other face side of the substrate 10. A plurality of hole parts 31, which communicate with the opening 11 and the cavity part 61 are formed in the lower electrode 30. The plurality of hole parts 31 are used as etchant injection ports from the opening 11 in the substrate 10, a sacrificial-layer etching operation between the lower electrode 30 and the movable electrode 40 can be performed, and the cavity part 61 can be formed, without removing the lower electrode in the injection region of a sacrificial-layer etchant.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了减小下电极的面积，并且防止基于下电极和可动电极两端的电容变化而检测施加压力的电容式压力传感器的灵敏度下降由于施加压力而发生位移。解决方案：电容型压力传感器设置有基板10，形成在基板10的一个面上的下电极30，通过空腔部61形成在下电极30上的振动板状可动电极40 以及形成在基板10中并从基板10的另一面侧的外侧到达下部电极30的开口11.多个与开口11连通的孔部31和空腔部61 形成在下电极30中。多个孔部31用作基板10的开口部11的蚀刻剂注入口，能够进行下电极30与可动电极40之间的牺牲层蚀刻操作，可以在不去除牺牲层蚀刻剂的注入区域中的下电极的情况下形成空腔部分61。

5. 发明专利

JP2013016636A Manufacturing method of mold package 有权
标题翻译：模具包装的制造方法
公开(公告)号：JP2013016636A
公开(公告)日：2013-01-24
申请号：JP2011148305
申请日：2011-07-04
申请人： Denso Corp , 株式会社デンソー , Mitsui High Tec Inc , 株式会社三井ハイテック
发明人： ARAKI MAKOTO , FUJII TETSUO , KAJIWARA YOSHITOKI , HIRATSUKA TETSUTSUGU
IPC分类号： H01L21/56 , H01L23/34
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To ensure a good clamp property even if a mold which is not provided with a protrusion and same as a conventional one is used for resin molding, and to suppress the generation of resin burrs on a body portion, by a protrusion provided on the body portion of a heat sink.SOLUTION: A heat sink 10 is a plane surface shape having a body portion 13 and projecting piece portions 14 projected outward from the body portion 13. At least a part of the projecting piece portion 14 is made to be a clamped portion 16 suppressed by a clamp during resin molding, and a part except for the clamped portion 16 of the heat sink 10 is clipped and pressed by a punch and a die, thereby providing a protrusion 17 on a peripheral edge portion of the body portion 13 except for the clamped portion 16 of the other surface 12 of the heat sink 10. Therefore, the protrusion 17 is provided by pressing the part except for the clamped portion 16 of the heat sink 10, so that the thickness of the clamped portion 16 of the heat sink 10 can be made same as the thickness of a conventional one which is not provided with a protrusion.
摘要翻译：要解决的问题为了确保即使没有设置突起并且与常规的模具相同的模具用于树脂模制而具有良好的夹持性能，并且抑制了主体部分上的树脂毛刺的产生，通过设置在散热器的主体部分上的突起。解决方案：散热器10是具有主体部分13和从主体部分13向外突出的突出片部分14的平面形状。突出片部分14的至少一部分被制成夹紧部分16 在树脂成形时由夹具抑制，并且除了散热器10的夹持部分16之外的部分被冲头和模具夹紧并按压，从而在主体部分13的周边部分上提供突起17，除了即散热器10的另一个表面12的夹紧部分16.因此，通过按压除了散热器10的夹紧部分16之外的部分来提供突起17，使得夹紧部分16的热量槽10可以与未设置突起的常规的厚度相同。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012181208A Current sensor and method for manufacturing current sensor 有权
标题翻译：电流传感器和制造电流传感器的方法
公开(公告)号：JP2012181208A
公开(公告)日：2012-09-20
申请号：JP2012118763
申请日：2012-05-24
申请人： Denso Corp , 株式会社デンソー
发明人： KURODA MICHITAKE , FUJII TETSUO
IPC分类号： G01R15/20
摘要： PROBLEM TO BE SOLVED: To provide a current sensor capable of improving location accuracy of a magnetoelectric transducer to a gap of a core, and to provide a method for manufacturing the current sensor.SOLUTION: In the current sensor, a core with a gap is integrally molded with a resin case; at least a part of the gap is exposed in a housing part of the resin case; a substrate for mounting a magnetoelectric transducer on a surface side thereof is housed in the housing part and disposed on the gap; and the magnetoelectric transducer is disposed in the gap. The magnetoelectric transducer is a mold IC where a magnetic sensor chip and a lead are electrically connected, and the magnetic sensor chip and a connection part of the magnetic sensor chip and the lead are coated with a sealing resin. The sealing resin of the mold IC has a taper part with thinner thickness in a width direction of the gap in accordance with a distance far from the substrate in a thickness direction of the substrate, and at least a part of a tapered external surface in the taper part faces both end surfaces in a width direction of the gap.
摘要翻译：要解决的问题：提供一种能够将磁电变换器的位置精度提高到芯的间隙的电流传感器，并且提供用于制造电流传感器的方法。
解决方案：在电流传感器中，具有间隙的芯体与树脂壳体一体模制; 间隙的至少一部分露出在树脂壳体的壳体部分中; 用于在其表面侧安装磁电换能器的基板被容纳在壳体部分中并且设置在间隙上; 并且磁电换能器设置在间隙中。磁电换能器是一种模具IC，其中磁性传感器芯片和引线电连接，磁性传感器芯片和磁性传感器芯片和引线的连接部分涂覆有密封树脂。模具IC的密封树脂具有锥形部分，该锥形部分沿着基板的厚度方向在距离基板的距离方向上在间隙的宽度方向上具有较薄的厚度，并且至少一部分锥形部分锥形部分面向间隙的宽度方向上的两个端面。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012088319A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012088319A
公开(公告)日：2012-05-10
申请号：JP2011240069
申请日：2011-11-01
申请人： Denso Corp , 株式会社デンソー
发明人： FUJII TETSUO , INOUE MAKI
IPC分类号： G01P15/08 , G01C19/5783 , G01L9/00 , G01P15/125 , H01L21/3205 , H01L23/52 , H01L27/14 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a structure which can simplifies a layout of wiring even when the wiring is provided in a plane direction of a substrate for a semiconductor device which has a sensing part sealed with a plurality of substrates, and a method of manufacturing the same.SOLUTION: A cap part 300 includes a cross-wiring part 323 to which a first fixed part and a second fixed part provided to a sensor part are electrically connected, and the cross-wiring part 323 includes cross-wiring 322 arranged on one surface 301 of the cap part 300. Further, the cap part 300 includes a penetrating electrode 344 which penetrates the cap part 300 and has one end electrically connected to the cross-wiring 322 and the other end arranged on the other surface 302 of the cap part 300. Consequently, the potential of the cross-wiring 322, namely, the potential of the first fixed part and second fixed part of the sensor part 100 can be led out to the other surface 302 of the cap part 300 via the penetrating electrode 344.
摘要翻译：解决的问题：为了提供即使在具有用多个基板密封的感测部件的半导体器件的基板的平面方向上设置配线的情况下，也能够简化配线的布局，并且制造方法解决方案：盖部分300包括交叉布线部分323，第一固定部分和设置到传感器部分的第二固定部分电连接到该交叉布线部分323，交叉布线部分323包括布置在其上的交叉布线322 盖部分300的一个表面301.此外，帽部分300包括穿透帽部分300的穿透电极344，其一端电连接到交叉线322，另一端布置在另一表面302上因此，交叉布线322的电位，即传感器部分100的第一固定部分和第二固定部分的电位可以经由穿透部分300引导到盖部分300的另一个表面302。电极344.版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012049246A Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012049246A
公开(公告)日：2012-03-08
申请号：JP2010188415
申请日：2010-08-25
申请人： Denso Corp , 株式会社デンソー
发明人： KAKOIYAMA NAOKI , FUJII TETSUO
IPC分类号： H01L23/28 , C08K9/10 , C08L63/00 , C08L83/04 , G01L9/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having an exposed chip surface, with part of a semiconductor chip surface exposed from mold resin, and a method for manufacturing the same, which is capable of molding not to let mold resin overflow to an exposed chip surface and can manufacture at low cost.SOLUTION: A semiconductor device 100 is the one having an exposed chip surface 11a, with part of the surface of a semiconductor chip 11 exposed from mold resin 32. The mold resin 32 comprises a composite resin including thermosetting resin 52 and microballoons 51 containing hydrocarbons 51b in shells made of high polymer 51a.
摘要翻译：要解决的问题：提供一种半导体器件，其具有暴露的芯片表面，其中半模芯片表面的一部分从模制树脂露出，以及其制造方法，其能够模制而不使模制树脂溢出到裸露的芯片表面并且可以以低成本制造。解决方案：半导体器件100是具有暴露的芯片表面11a的半导体器件100，半导体芯片11的一部分表面从模制树脂32露出。模制树脂32包括包含热固性树脂52和微球51的复合树脂在由高分子51a制成的壳体中含有碳氢化合物51b。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011222554A Wiring board with built-in semiconductor chip 审中-公开
标题翻译：接线板，内置半导体芯片
公开(公告)号：JP2011222554A
公开(公告)日：2011-11-04
申请号：JP2010086347
申请日：2010-04-02
申请人： Denso Corp , 株式会社デンソー
发明人： HIROSE SHINICHI , MAEDA YUKIHIRO , NAKANO TAKASHI , FUJII TETSUO , HARADA YOSHIHARU
IPC分类号： H05K3/46 , H01L23/12
CPC分类号： H01L2224/16225 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a wiring board with a built-in semiconductor chip for simplifying a manufacture process and eliminating the lack of current capacity without increasing a body size while a power transistor and a signal processing circuit portion coexist in a chip.SOLUTION: A large current electrode and a plurality of small current electrodes whose flowing current is smaller than the large current electrode are formed on one face of a semiconductor chip embedded in an insulating substrate including thermoplastic resin. Wiring portions connected to the small current electrodes are positioned just above the small current electrodes, have first pads formed of a conductor pattern connected to the small current electrodes and includes a plurality of first pads positioned just above the adjacent small current electrodes and on the same layer as the first pads. Wiring portions connected to the large current electrode are made of metal pieces and include lateral wiring portions positioned on the same layer as the plurality of first pads. The metal piece is positioned just above the large current electrode and serves as a second pad and is thicker than the first pad positioned on the same layer.
摘要翻译：要解决的问题：为了提供具有内置半导体芯片的布线板，用于在功率晶体管和信号处理电路部分共存的同时简化制造工艺并消除电流容量的不足而不增加体积芯片。解决方案：在包含热塑性树脂的绝缘基板中的半导体芯片的一个面上形成有大电流电极和流动电流小于大电流电极的多个小电流电极。连接到小电流电极的接线部分位于小电流电极的正上方，具有由连接到小电流电极的导体图案形成的第一焊盘，并且包括位于相邻的小电流电极正上方的多个第一焊盘层作为第一垫。连接到大电流电极的接线部分由金属片制成，并且包括位于与多个第一焊盘相同的层上的横向布线部分。金属片位于大电流电极正上方，用作第二焊盘，并且比位于同一层上的第一焊盘更厚。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011220885A Mechanical quantity detection device and method of manufacturing the same 有权
标题翻译：机械数量检测装置及其制造方法
公开(公告)号：JP2011220885A
公开(公告)日：2011-11-04
申请号：JP2010091410
申请日：2010-04-12
申请人： Denso Corp , 株式会社デンソー
发明人： FUJII TETSUO , SAKAI MINEICHI , SHIBATA TAKUMI
IPC分类号： G01L9/00 , B81B3/00 , B81C3/00 , G01P15/125 , H01L29/84 , H04R19/04 , H04R31/00
CPC分类号： G01L9/0005
摘要： PROBLEM TO BE SOLVED: To provide a mechanical quantity detection device capable of avoiding instability of capacity detection characteristics due to a PN junction portion.SOLUTION: A first electrode 301 is provided that has a hollow cylindrical first wall part 340 including oppositely arranged two diaphragms 341 and 342 on one face 201 of an insulation layer 200 and a first lid part 321 that closes an opening 346 of the first wall part 340. A second electrode 302 is provided that has a hollow cylindrical second wall part 350 including oppositely arranged two diaphragms 351 and 352 on one face 201 of the insulation layer 200 and a second lid part 322 that closes an opening 356 of the second wall part 350. One diaphragm 341 of the first wall part 340 is positioned opposite to one diaphragm 351 of the second wall part 350. Since the electrodes 301 and 302 are electrically separated on the insulation layer 200, no semiconductor region is required that makes each diaphragm of each wall part 340 and 350 function as an electrode.
摘要翻译：要解决的问题：提供一种能够避免由于PN结部分引起的容量检测特性不稳定的机械量检测装置。解决方案：提供第一电极301，其具有中空圆柱形第一壁部分340，该中空圆柱形第一壁部分340包括在绝缘层200的一个面201上相对布置的两个膜片341和342;以及第一盖部分321，其封闭提供第二电极302，其具有中空圆柱形第二壁部分350，该中空圆柱形第二壁部分350包括在绝缘层200的一个面201上相对布置的两个隔膜351和352;以及第二盖部分322，其封闭第一壁部分340的一个隔膜341与第二壁部分350的一个隔膜351相对定位。由于电极301和302在绝缘层200上电隔离，因此不需要半导体区域每个壁部340和350的每个隔膜用作电极。版权所有（C）2012，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式