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1. 发明专利

JP2011166052A Semiconductor element and power conversion device with the semiconductor element 审中-公开
标题翻译：半导体元件和功率转换器件与半导体元件
公开(公告)号：JP2011166052A
公开(公告)日：2011-08-25
申请号：JP2010029869
申请日：2010-02-15
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： KUWABARA MAKOTO , HATTORI YOSHIKUNI , TAGUCHI RIE , MIZUNO SHOJI , YAMAMOTO TAKESHI , SUMITOMO MASAKIYO , SAIKAKU HIROTAKA , BANNO EIKO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a technique for improving reverse recovery characteristics with respect to a semiconductor element which has an insulating gate structure and a diode structure mixedly present on a semiconductor substrate.
SOLUTION: The semiconductor element 14a is driven by a driving method of applying a gate voltage to a trench gate electrode 36a of a trench gate 36 when a reflux current is flowing through the diode structure comprising a body region 33 and a drift region 32. The semiconductor element 14a has an element portion and a terminal portion. A semiconductor substrate 50 is provided with a defect region 43, which is shortened in lifetime, only at the terminal portion.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高相对于混合存在于半导体衬底上的绝缘栅极结构和二极管结构的半导体元件的反向恢复特性的技术。解决方案：当回流电流流过包括体区33和漂移区域的二极管结构时，通过施加栅极电压到沟槽栅极36的沟槽栅电极36a的驱动方法来驱动半导体元件14a 半导体元件14a具有元件部分和端子部分。半导体衬底50仅在端子部分设置有缺陷区域43，该缺陷区域的寿命缩短。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011146555A Driving method for semiconductor element, and power converter having the semiconductor element 审中-公开
标题翻译：半导体元件的驱动方法和具有半导体元件的功率转换器
公开(公告)号：JP2011146555A
公开(公告)日：2011-07-28
申请号：JP2010006549
申请日：2010-01-15
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： TAGUCHI RIE , KUWABARA MAKOTO , SHOJI TOMOYUKI , HATTORI YOSHIKUNI , MIZUNO SHOJI , YAMAMOTO TAKESHI , SUMITOMO MASAKIYO , SAIKAKU HIROTAKA
IPC分类号： H01L27/04 , H01L29/739 , H01L29/78 , H01L29/861 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a driving method for a semiconductor element having transistors and diodes mounted together on a semiconductor substrate, which reduces power loss. SOLUTION: The driving method includes a gate voltage applying step of applying a gate voltage Vg (Tr2) to the gate electrode 24 of a transistor Tr2 when a reflux current flows through a diode D2. The gate voltage Vg (Tr2) is set to a voltage lower than a first voltage V H . The first voltage V H is a threshold voltage for the transistor Tr2 when a reverse voltage is applied to the diode D2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体元件的驱动方法，该半导体元件具有安装在半导体基板上的晶体管和二极管，这降低了功率损耗。解决方案：驱动方法包括：栅极电压施加步骤，当回流电流流经二极管D2时，栅极电压Vg（Tr2）施加到晶体管Tr2的栅电极24。栅极电压Vg（Tr2）被设定为比第一电压V 低的电压。当向二极管D2施加反向电压时，第一电压V SB 是晶体管Tr2的阈值电压。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2012049499A Semiconductor device and control method thereof 有权
标题翻译：半导体器件及其控制方法
公开(公告)号：JP2012049499A
公开(公告)日：2012-03-08
申请号：JP2011027994
申请日：2011-02-11
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： NISHIZUMI HIROTAKA , YAMAMOTO TAKESHI , MIZUNO SHOJI , SUMITOMO MASAKIYO , SAKAKIBARA JUN , FUJII TETSUO , HATTORI YOSHIKUNI , TAGUCHI RIE , KUWABARA MAKOTO
IPC分类号： H01L29/78 , H01L21/336 , H01L27/04 , H01L29/423 , H01L29/49 , H01L29/739 , H01L29/861
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having such a structure with which self turn-on due to noise does not take place easily and in which recovery loss can be reduced.SOLUTION: A gate electrode 8 has a double gate structure with first and second gate electrodes 8a, 8b of different depth. With such a structure, an inversion layer is formed for a p-type base region 3 by turning only the first gate electrode 8a out of the first and second gate electrodes 8a, 8b, but the inversion layer may be formed not deep enough to connect an ntype drift layer 2 and an n-type impurity region 4. The first gate electrode 8a functions as an excessive carrier injection inhibition gate.
摘要翻译：要解决的问题：提供一种具有这样的结构的半导体器件，由于噪声而导致的自身接通不容易发生，并且可以降低恢复损耗。解决方案：栅电极8具有双栅极结构，其具有不同深度的第一和第二栅电极8a，8b。通过这样的结构，通过仅使第一和第二栅极电极8a，8b中的第一栅极电极8a转动而形成p型基极区域3的反转层，但是反转层可以形成得不够深以连接类型漂移层2和n + 型杂质区域4.第一栅电极8a起过量作用载流子注入抑制栅极。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011029231A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011029231A
公开(公告)日：2011-02-10
申请号：JP2009170416
申请日：2009-07-21
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： HATTORI YOSHIKUNI , KUWABARA MAKOTO , TAGUCHI RIE , MIZUNO SHOJI , SUMITOMO MASAKIYO , OSAWA SEIGO
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To improve proof strength when a recovery current flows to a diode in which a switching semiconductor device exists. SOLUTION: The switching semiconductor device has a channel region 23a formed in the center in a range facing a surface of a semiconductor substrate, a resurf region RS1 formed in a peripheral part, a source region 25 formed in a range facing the surface of the channel region, a plurality of trench gate regions 21 and a conductive film FP 0 conducted to the gate region 21, and is formed on an insulating film. The trench regions 21 are arranged in parallel and ends in a longitudinal direction of a plurality of trenches are arranged on the same straight line. At least a part of the channel region projects out to a peripheral side of the semiconductor device rather than a straight line between adjacent pitches of a trench pair. The recovery current flows over a wide range of the channel region 23a and is not concentrated. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提高恢复电流流向存在开关半导体器件的二极管时的抗强度。解决方案：切换半导体器件具有在面向半导体衬底的表面的范围内形成在中心的沟道区23a，形成在周边部分的再结晶区域RS1，形成在面向表面的范围内的源极区域25 沟道区域的多个沟槽栅极区域21和导电膜FP 0 传导到栅极区域21，并形成在绝缘膜上。沟槽区域21平行布置并且在多个沟槽的纵向方向上的端部被布置在相同的直线上。沟道区域的至少一部分突出到半导体器件的外围侧，而不是沟槽对的相邻间距之间的直线。恢复电流在沟道区域23a的宽范围内流动并且不集中。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009296216A Switching drive circuit, and switching circuit 审中-公开
标题翻译：切换驱动电路和切换电路
公开(公告)号：JP2009296216A
公开(公告)日：2009-12-17
申请号：JP2008146779
申请日：2008-06-04
申请人： Denso Corp , Toyota Central R&D Labs Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： HATTORI YOSHIKUNI , KUWABARA MAKOTO , NAKANO TAKASHI , TAKAHASHI SHIGEKI , MIZUNO SHOJI , AOKI TAKAAKI , SUMITOMO MASAKIYO
IPC分类号： H03K17/16 , H02M1/08 , H02M3/155 , H03K17/695
摘要： PROBLEM TO BE SOLVED: To provide a technique that reduces harmonic noise, as well as, suppresses increase in switching loss. SOLUTION: This switching drive circuit 11 has temporal change-over of a conduction state change-over to a non-conduction state and vice versa, between a drain electrode and a source electrode of a transistor Tr10, by changing a gate voltage Vg of the transistor Tr10. The switching drive circuit 11 is provided with a variable capacitance element 14, connected between the drain electrode D and an gate electrode G of the transistor Tr10. The capacitance of the variable capacitance element 14 is such that it is lowered, when the potential difference between the drain electrode D and the gate electrode G of the transistor Tr10 is increased. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供减少谐波噪声的技术，以及抑制开关损耗的增加。解决方案：该开关驱动电路11通过改变栅极电压，在晶体管Tr10的漏极和源极之间具有导通状态转换到非导通状态的时间转换，反之亦然晶体管Tr10的Vg。开关驱动电路11设置有连接在漏电极D和晶体管Tr10的栅电极G之间的可变电容元件14。当晶体管Tr10的漏电极D和栅电极G之间的电位差增加时，可变电容元件14的电容降低。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2013235891A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013235891A
公开(公告)日：2013-11-21
申请号：JP2012106013
申请日：2012-05-07
申请人： Denso Corp , 株式会社デンソー
发明人： KOYAMA KAZUHIRO , SUMITOMO MASAKIYO , HIGUCHI YASUSHI
IPC分类号： H01L29/739 , H01L29/78
CPC分类号： H01L27/0722 , H01L27/0727 , H01L29/0834 , H01L29/1095 , H01L29/4236 , H01L29/7397 , H01L29/7827 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing snap-back phenomenon, the conduction loss of an IGBT and an FWD, current concentration, and reduction in withstand voltage performance.SOLUTION: In a buffer layer 11, carrier density is set to be lower than spatial charge density. Thus, reduction in a resistance value can be suppressed even if the spatial discharge density of the buffer layer 11 is increased. Consequently, the resistance value of the buffer layer 11 can be made large even if a drift layer 2 is made thin for suppressing the conduction loss of an IGBT and the spatial charge density is increased for suppressing a depletion layer from reaching a collector layer 12. In other words, snap-back phenomenon can be suppressed while reducing the conduction loss of the IGBT, and further reduction in withstand voltage performance can be suppressed. Moreover, since there is no need to widen the width of the collector layer 12, increase in the conduction loss can be suppressed without reducing the effective area of the element, thereby suppressing current concentration.
摘要翻译：要解决的问题：提供一种能够抑制卡扣现象，IGBT的导通损耗和FWD，电流集中和耐压性能降低的半导体器件。解决方案：在缓冲层11中，设置载流子密度低于空间电荷密度。因此，即使缓冲层11的空间放电密度增加，也可以抑制电阻值的降低。因此，即使为了抑制IGBT的导通损耗而使漂移层2变薄，并且为了抑制耗尽层到达集电极层12而增加空间电荷密度，可以使缓冲层11的电阻值变大。换句话说，可以抑制回并现象，同时减少IGBT的导通损耗，并且可以抑制耐压性能的进一步降低。此外，由于不需要扩大集电极层12的宽度，可以抑制导通损耗的增加，而不会降低元件的有效面积，从而抑制电流集中。

7. 发明专利

JP2013183071A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013183071A
公开(公告)日：2013-09-12
申请号：JP2012046618
申请日：2012-03-02
申请人： Denso Corp , 株式会社デンソー
发明人： HIGUCHI YASUSHI , SUMITOMO MASAKIYO
IPC分类号： H01L29/786 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7393 , H01L29/0808 , H01L29/1008 , H01L29/1095 , H01L29/4236 , H01L29/7394 , H01L29/7397 , H01L29/7824 , H01L29/7825
摘要： PROBLEM TO BE SOLVED: To suppress an increase in ON resistance and a decrease in breakdown tolerance, and further to suppress a decease in breakdown voltage.SOLUTION: A plurality of trenches 6 are formed reaching a reverse surface 2b of a drift layer 2, and a contact layer 5 is formed in a surface layer of the drift layer 2 on a tip end side in an extending direction of the plurality of trenches 6. When a predetermined voltage is applied to a gate electrode, a channel region is formed at a part of a base layer 3 which comes into contact with the trenches 6, and current flows along the trenches 6 in the extending direction of the trenches 6. Consequently, current never flows around to lower parts of the trenches 6, and even when a high voltage is applied at OFF time etc., generation of a high electric field at the lower parts of the trenches 6 can be suppressed. Consequently, an increase in ON resistance and a decrease in breakdown tolerance can be suppressed, and further a decrease in breakdown voltage can also be suppressed.
摘要翻译：要解决的问题：抑制导通电阻的增加和击穿耐受性的降低，进一步抑制击穿电压的下降。解决方案：形成多个沟槽6，到达漂移层2的背面2b，并且在多个沟槽6的延伸方向的前端侧，在漂移层2的表面层上形成接触层5.当向栅电极施加预定电压时，在一部分形成沟道区与沟槽6接触的基极层3的电流沿着沟槽6沿着沟槽6的延伸方向流动。因此，电流不会流到沟槽6的下部，并且即使当高电压在OFF时间施加等，可以抑制在沟槽6的下部产生高电场。因此，可以抑制导通电阻的增加和击穿耐受性的降低，并且还可以抑制击穿电压的降低。

8. 发明专利

JP2013165498A Drive control device 有权
标题翻译：驱动控制装置
公开(公告)号：JP2013165498A
公开(公告)日：2013-08-22
申请号：JP2013059960
申请日：2013-03-22
申请人： Denso Corp , 株式会社デンソー
发明人： INOUE TSUYOSHI , SUMITOMO MASAKIYO
IPC分类号： H03K17/08 , H01L27/04 , H01L29/06 , H01L29/78 , H02M1/08 , H03K17/695
CPC分类号： H01L2224/0603 , H01L2224/48247 , H01L2224/49111 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To make it possible to obtain a desired characteristic as to a reverse recovery current reduction of a diode, which becomes a problem at a turn-on time, or the like.SOLUTION: A series circuit composed of a diode D3 and an inductor L1 is parallelly connected to a diode D1, so when a load current refluxes, the current is easy to continue flowing in a forward direction of the diode D3 by means of an action of the inductor L1 (Fig. 5(b)). Also, before a first on control voltage is applied to a gate of a transistor M2, a second on control voltage that is a voltage exceeding zero and is under a threshold voltage Vth of a transistor M1 is applied to a gate of the transistor M1 (ON': Fig. 5(a) and Fig. 5(b)). When a current continues flowing to the inductor L1 and the diode D3, a reverse recovery current flows to the diode D1.
摘要翻译：要解决的问题：使得可以获得关于在导通时间等成为问题的二极管的反向恢复电流降低的期望特性。解决方案：由二极管D3组成的串联电路并且电感器L1并联连接到二极管D1，因此当负载电流回流时，电流容易通过电感器L1的作用在二极管D3的正向继续流动（图5（b）））。此外，在将第一开启控制电压施加到晶体管M2的栅极之前，将作为电压超过零并且处于晶体管M1的阈值电压Vth以下的第二导通控制电压施加到晶体管M1的栅极（ ON'：图5（a）和图5（b））。当电流继续流向电感器L1和二极管D3时，反向恢复电流流向二极管D1。

9. 发明专利

JP2013084922A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013084922A
公开(公告)日：2013-05-09
申请号：JP2012196549
申请日：2012-09-06
申请人： Denso Corp , 株式会社デンソー
发明人： HIGUCHI YASUSHI , SUMITOMO MASAKIYO , FUKATSU SHIGEMITSU
IPC分类号： H01L29/78 , H01L29/739
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/0843 , H01L29/1095 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/66348
摘要： PROBLEM TO BE SOLVED: To improve short-circuit withstanding capability while achieving low on-state voltage.SOLUTION: A semiconductor device comprises a trench gate having a bottom part in a drift layer and including a communication part formed to communicate from a surface of a base layer to the bottom part. The communication part is formed, with respect to a x-y plane defined by an x direction and a y direction orthogonal to each other and a z direction orthogonal to the x-y plane, from a surface of the base layer along the x-y plane to a depth of a distance D1 in the z direction, and the bottom part is formed from a connection surface with the communication part to a depth of a distance D2 in the z direction. The trench gate extends in the y direction and has a width in the x direction at the bottom part is larger than a width of the communication part. Further, a region between neighboring trench gates has an effective region corresponding to an emitter layer that serves as an injection source of charge to the drift layer, and an ineffective region that generates no injection source of charge. The effective regions are separated at a distance Lin the y direction. The distance Lof the effective region satisfies a relationship represented as L≤2(D+D).
摘要翻译：要解决的问题：提高短路耐受能力，同时实现低导通电压。解决方案：半导体器件包括沟槽栅极，沟槽栅极在漂移层中具有底部，并且包括形成为从基底层的表面到底部部分的连通的连通部。通信部分相对于从xy平面垂直的x方向和ay方向和xy方向定义的xy平面形成，从基底层的沿xy平面的表面延伸到距离的深度 D1在z方向上，并且底部由与连通部的连接表面形成为在z方向上的距离D2的深度。沟槽栅极沿y方向延伸，并且在底部的x方向上的宽度大于连通部的宽度。此外，相邻沟槽栅极之间的区域具有对应于用作向漂移层的注入电荷源的发射极层的有效区域和不产生注入电荷源的无效区域。有效区域在y方向上以距离L 1 分开。有效区域的距离L 1 满足表示为L 1 ≤2的关系（D 1 + D 2 ）。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012080074A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012080074A
公开(公告)日：2012-04-19
申请号：JP2011145461
申请日：2011-06-30
申请人： Denso Corp , 株式会社デンソー
发明人： SUMITOMO MASAKIYO , HIGUCHI YASUSHI , FUKATSU SHIGEMITSU
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0834 , H01L29/0839 , H01L29/1095 , H01L29/4236 , H01L29/66348
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a load short-circuit withstand capability while achieving low on-resistance, and to provide a method of manufacturing the same.SOLUTION: Trench gates 8 include bottom portions protruding in the direction parallel to a main surface of a collector layer 1, which is the direction perpendicular to the extending direction of trenches 5, in a drift layer 3. The distance between the bottom portions of the adjacent trench gates 8 is set to be shorter than the distance between the portions opposite to the bottom portions of the adjacent trench gates 8. Additionally, in the trenches 5, the thickness of gate insulating films 6 provided on the wall surfaces constituting the bottom portions is set to be thicker than that of the gate insulating films 6 provided on the wall surfaces closer to the opening sides than the wall surfaces constituting the bottom portions.
摘要翻译：要解决的问题：提供能够在实现低导通电阻的同时提高负载短路耐受能力的半导体器件，并提供其制造方法。解决方案：沟槽门8包括在漂移层3中沿与沟槽5的延伸方向垂直的方向平行于集电体层1的主表面的方向突出的底部。底部之间的距离相邻的沟槽栅极8的部分被设定为比相邻的沟槽栅8的底部相反的部分之间的距离短。另外，在沟槽5中，设置在构成的壁面上的栅极绝缘膜6的厚度将底部设定为比构成底部的壁面更靠近开口侧的壁面上的栅极绝缘膜6的厚度设定为较厚。版权所有（C）2012，JPO＆INPIT

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