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1. 发明专利

JP2003068967A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2003068967A
公开(公告)日：2003-03-07
申请号：JP2001259573
申请日：2001-08-29
申请人： Denso Corp , 株式会社デンソー
发明人： YAGI KENJI , HIRANO NAOHIKO
IPC分类号： H01L23/48 , H01L23/58
CPC分类号： H01L24/33 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is composed of a lead frame and a power element soldered direct to it, which is capable of stopping an overcurrent from flowing continuously. SOLUTION: This semiconductor device 1 is equipped with a power element 2 and power leads 3a and 4a connected to the main electrodes of the power element 2, the power element 2 is sealed up in a molded body 10 of resin 9, the power leads 3a and 4a are provided while protruding from the molded resin body 10, and a fuse 4c is provided to the power leads 3a and 4a respectively. In this constitution, when an overcurrent flows, the fuses 4c of the power leads 3a and 4a are fused, so that an overcurrent can be surely stopped from flowing continuously.
摘要翻译：要解决的问题：提供一种由引线框架和直接焊接的功率元件组成的半导体器件，其能够阻止过电流连续流动。解决方案：该半导体装置1配备有与功率元件2的主电极连接的功率元件2和电源引线3a，4a，功率元件2密封在树脂9的成型体10中，电源引线3a 4a从模制树脂体10突出设置，熔断器4c分别设置在电力线3a和4a上。在这种结构中，当过电流流动时，电力线3a和4a的保险丝4c熔断，从而可以确实地防止过电流不断流动。

2. 发明专利

JP2014207261A 半導体装置及びその製造方法审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014207261A
公开(公告)日：2014-10-30
申请号：JP2013082381
申请日：2013-04-10
申请人：株式会社デンソー , Denso Corp
发明人： YAGI KENJI
IPC分类号： H01L21/56 , H01L23/48 , H01L23/50
摘要：【課題】樹脂バリを無くすことができ、且つ、ダイの寿命を伸長することができる半導体装置及びその製造方法を提供する。【解決手段】封止樹脂体(16)を成形する成形工程では、下面(16b)及び樹脂側面(16c)に開口する凹部(24)を有し、リード(14)のうち、上面(16a)側の一面(14a)が封止樹脂体に封止される封止部(26)において、下面側の裏面(14b)の少なくとも一部が凹部により露出するように、封止樹脂体を成形する。成形後において樹脂バリ(48)を打ち抜き除去する除去工程では、封止部のうち、凹部から露出する裏面露出部(28)を、ダイ(52)にて支持しつつ、パンチ(54)により、封止樹脂体から外部に延出された延出部(22)の幅方向両側を、所定位置から少なくとも封止部との境界まで、樹脂バリとともに打ち抜く。【選択図】図11
摘要翻译：要解决的问题：提供可以消除树脂毛刺并延长模具寿命的半导体器件及其制造方法。解决方案：一种用于制造半导体器件的方法包括：模制封装树脂体的模制过程（16），以便具有向下表面（16b）和树脂侧面（16c）开口的凹部（24），并且使得至少一部分后表面（14b）位于引线（14）暴露在封装部分（26）处，其中上表面（16a）侧的一个表面（14a）被密封树脂体封装; 以及在模制之后通过冲压去除树脂毛刺（48）的去除工艺，其中从密封树脂体向外延伸的延伸部分（22）的宽度方向上的两侧与树脂毛刺一起冲压在一起（54）从预定位置到所述封装体和所述延伸部分之间的至少边界，而从所述封装部分的所述凹部暴露的后表面暴露部分（28）由模具（52）支撑。

3. 发明专利

JP2008078679A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008078679A
公开(公告)日：2008-04-03
申请号：JP2007286138
申请日：2007-11-02
申请人： Denso Corp , 株式会社デンソー
发明人： HIRANO NAOHIKO , TEJIMA TAKANORI , MASAMITSU KUNIAKI , YAGI KENJI , NAKASE YOSHIMI , OKURA YASUTSUGU , NOMURA KAZUHITO , FUKUDA YUTAKA
IPC分类号： H01L23/29 , H01L23/48
CPC分类号： H01L24/33 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/1301 , H01L2924/13055 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a device from being damaged, when a large thermal stress is applied to the semiconductor device which enables the system to improve the long-term reliability. SOLUTION: The semiconductor device 1 is provided with a semiconductor chip 2 and a pair of heat sinks 3, 4 that perform radiation from both surfaces of the chip 2 and is configured to establish the relation t2/t1≥5, if the thickness dimension of the chip 2 is t1 and the thickness dimension of at least one heat sink 3 between a pair of the heat sinks 3, 4 is t2 in substantially the entire device which is molded with resin 7. That the device is not damaged is confirmed by a prototype and experiment, even if a large thermal stress is applied to the device 1 of the configuration. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够防止装置损坏的半导体装置，当对半导体装置施加大的热应力时，能够使系统提高长期可靠性。解决方案：半导体器件1设置有从芯片2的两个表面执行辐射的半导体芯片2和一对散热器3,4，并且被配置为建立关系t2 /t1≥5，如果芯片2的厚度尺寸为t1，并且在一对散热器3,4之间的至少一个散热器3的厚度尺寸基本上在用树脂7模制的整个装置中为t2。该装置未被损坏通过原型和实验证实，即使对构造的装置1施加大的热应力。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007095875A Mounting structure of semiconductor device 有权
标题翻译：半导体器件的安装结构
公开(公告)号：JP2007095875A
公开(公告)日：2007-04-12
申请号：JP2005281360
申请日：2005-09-28
申请人： Denso Corp , 株式会社デンソー
发明人： YAGI KENJI , KURAUCHI TAKESHI
IPC分类号： H01L23/29 , H01L23/40
CPC分类号： H01L24/33 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To ensure attachment to a cooler by controlling the position gap between a zipper member and a semiconductor device in the mounting structure of a semiconductor device, wherein the double-sided heat dissipation type semiconductor device is attached to the cooler by using the zipper member. SOLUTION: The mounting structure of a semiconductor device is constituted such that a semiconductor device 100 comprising a plate-like mold resin 7 where heat dissipation surfaces 3a and 4a of metal plates 3 and 4 are exposed from one surface 7a, and the other surface 7b is sandwiched by a zipper member 300 and inserted in a clearance 21a between a pair of cooling plates 21. The side 7c of the mold resin 7 inserted by holding side 31 of the zipper member 300 has a shape of a protruded mountain, and an angle of a gradient θ to a line L parallel to the direction of the plate thickness of the mold resin 7 of the gradient plane 7d is set to 25° or larger. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了通过控制半导体器件的安装结构中的拉链构件和半导体器件之间的位置间隙来确保连接到冷却器，其中双面散热型半导体器件被附接到通过使用拉链构件来冷却。解决方案：半导体器件的安装结构被构造成使得包括板状模制树脂7的半导体器件100，其中金属板3和4的散热表面3a和4a从一个表面7a露出，其它表面7b被拉链件300夹在中间并插入在一对冷却板21之间的间隙21a中。由拉链件300的保持侧31插入的模制树脂7的侧面7c具有突出的山形，并且将梯度θ与平行于倾斜面7d的模制树脂7的板厚方向的线L的角度设定为25°以上。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2009302115A Manufacturing apparatus for semiconductor device 审中-公开
标题翻译：半导体器件制造设备
公开(公告)号：JP2009302115A
公开(公告)日：2009-12-24
申请号：JP2008151617
申请日：2008-06-10
申请人： Denso Corp , 株式会社デンソー
发明人： YAGI KENJI , MIZUTANI NOBORU
IPC分类号： H01L23/50
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing apparatus for semiconductor devices, by which two or more kinds of semiconductor devices whose terminal portions are different in shape are manufactured without making facilities complex nor large in size and without making it complicated to maintain the facilities. SOLUTION: A base 11 of the manufacturing apparatus 10 is provided with two metal molds 15 and 16 on which workpieces 300 are mounted. On the two metal molds 15 and 16, the workpieces 300 in the same shape are mounted. The workpieces 300 in the same shape which are mounted on the two metal molds 15 and 16 are cut with blade portions 17 provided corresponding to those workpieces 300. Consequently, two kinds of semiconductor devices 100 and 200 such that only end portions 102 and 202 are only different in shape are formed from the workpieces 300 in the same shape. Consequently, the two kinds of semiconductor devices 100 and 200 are manufactured which have the terminal portions 102 and 202 in the different shapes. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于半导体器件的制造装置，其中制造端子部分形状不同的两种或更多种半导体器件，而不会使设备复杂且尺寸不大，并且不会使维护变得复杂设施。解决方案：制造装置10的基座11设置有两个金属模具15和16，工件300安装在该金属模具15和16上。在两个金属模具15和16上，安装相同形状的工件300。安装在两个金属模具15和16上的具有相同形状的工件300被切割成与这些工件300相对应设置的刀片部分17.因此，两种半导体装置100和200，使得只有端部102和202是仅以相同形状的工件300形成不同的形状。因此，制造了具有不同形状的端子部分102和202的两种半导体器件100和200。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2005109526A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005109526A
公开(公告)日：2005-04-21
申请号：JP2005008264
申请日：2005-01-14
申请人： Denso Corp , 株式会社デンソー
发明人： HIRANO NAOHIKO , TEJIMA TAKANORI , MASAMITSU KUNIAKI , YAGI KENJI , NAKASE YOSHIMI , OKURA YASUTSUGU , NOMURA KAZUHITO , FUKUDA YUTAKA
IPC分类号： H01L23/34
CPC分类号： H01L24/33 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent element breakdown when large thermal stress acts on a semiconductor device and to improve the long-term reliability of the semiconductor device. SOLUTION: The semiconductor device 1 comprises a semiconductor chip 2, and a pair of heatsinks 3 and 4 for radiating heat from both sides of this semiconductor chip 2. The device is constituted such that t2/t1≥5 is satisfied when the size of the thickness of the semiconductor chip 2 is set to t1, and the size of the thickness of at least one of the pair of heat sinks 3 of 4 is set to t2 in the device which is most entirely molded by resin 7. It has confirmed by trial production and experiment that, even if large thermal stress acts on the semiconductor device 1 of the above structure, element damage does not occur. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止当大的热应力作用在半导体器件上时元件击穿并提高半导体器件的长期可靠性。解决方案：半导体器件1包括半导体芯片2和用于从该半导体芯片2的两侧辐射热量的一对散热器3和4.该器件被构造成使得当t2 /t1≥5时半导体芯片2的厚度的大小被设定为t1，并且在由树脂7最完全模制的装置中，将一对散热器3中的至少一个的厚度3设定为t2的大小。通过试生产和实验证实，即使在上述结构的半导体器件1上施加大的热应力，也不会发生元件损伤。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2003289129A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2003289129A
公开(公告)日：2003-10-10
申请号：JP2002091101
申请日：2002-03-28
申请人： Denso Corp , 株式会社デンソー
发明人： YAGI KENJI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L24/33 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01322 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing a surge voltage. SOLUTION: This semiconductor device is interposed between a second conductor member 5 and a third conductor member 6, and a capacitor 14, connected in parallel with the element of an FWD chip 2, is integrally molded with the FWD chip 2 with resin 9. That is, a capacitor 14 is disposed in the neighborhood of the FWD chip 2 which is the generation source of the surge voltage so that the surge voltage generated by the FWD chip 2 can be absorbed by the capacitor 14. Then, the surge voltage generated from the FWD chip 2 can be effectively suppressed, and the radiation quantity of the surge voltage can be reduced, and the misoperation of a peripheral electronic apparatus or the reception failure of a radio can be prevented. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于抑制浪涌电压的半导体器件。解决方案：该半导体器件插入在第二导体构件5和第三导体构件6之间，并且与FWD芯片2的元件并联连接的电容器14与FWD芯片2一体地模制，树脂也就是说，电容器14设置在作为浪涌电压的发生源的FWD芯片2的附近，使得由FWD芯片2产生的浪涌电压可以被电容器14吸收。然后，电涌可以有效地抑制从FWD芯片2产生的电压，并且可以减小浪涌电压的辐射量，并且可以防止外围电子设备的误操作或无线电的接收故障。版权所有（C）2004，JPO

8. 发明专利

JP2009253131A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2009253131A
公开(公告)日：2009-10-29
申请号：JP2008101133
申请日：2008-04-09
申请人： Denso Corp , 株式会社デンソー
发明人： KUSAMA HIROTOSHI , YAGI KENJI , OKUMURA TOMOMI
IPC分类号： H01L23/48
CPC分类号： H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To mount a semiconductor on a first metal plate without using a positioning tool, in a manufacturing method of a semiconductor device wherein a wire is connected to one surface of a semiconductor element, and a first metal plate and a second metal plate are solder-jointed to the other surface and the one surface of the semiconductor element by a once reflow process. SOLUTION: Guide wires 200 each having a shape extending along the outline of an element mounting region R are previously arranged outside of the element mounting region R being a region for mounting a semiconductor element 10 therein within one surface 31 of a first metal plate 30; and first solder 50, the semiconductor element 10 and second solder 60 are sequentially mounted on the one surface 31 of the first metal plate 30 by using the guide wires 200 as positioning marks. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在不使用定位工具的情况下将半导体安装在第一金属板上的半导体器件的制造方法中，其中线连接到半导体元件的一个表面，以及第一金属板和通过一次回流工艺将第二金属板焊接到另一表面和半导体元件的一个表面。解决方案：具有沿着元件安装区域R的轮廓延伸的形状的引导线200预先布置在作为用于将半导体元件10安装在第一金属的一个表面31内的区域的元件安装区域R的外侧板30; 并且通过使用引导线200作为定位标记，第一焊料50，半导体元件10和第二焊料60依次安装在第一金属板30的一个表面31上。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2004303854A Semiconductor device 有权
公开(公告)号：JP2004303854A
公开(公告)日：2004-10-28
申请号：JP2003093241
申请日：2003-03-31
申请人： Denso Corp , 株式会社デンソー
发明人： YAGI KENJI
IPC分类号： H01L23/28 , H01L23/34 , H01L23/36 , H01L23/48 , H01L25/07 , H01L25/18
CPC分类号： H01L24/33 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a resin-molded semiconductor device with a heat sink which is assembled easily into an external apparatus and which has an improved yield. SOLUTION: The semiconductor device 1 has a semiconductor switching element 10 in which a first electrode and an electrode for a control are exposed to one main surface side and a second electrode to the other main surface side, a pair of heat dissipating members 2 and 3 arranged in a shape that the element 10 is held and connected electrically and thermally to the first electrode and the second electrode respectively, and a molding resin section 4 filled between a pair of the members 2 and 3. The device 1 has a flexible wiring member 5 which is provided for the input of a control signal and led out to the outside and in which a surface is insulated and worked, and the member 5 is conducted and bonded with the electrode for the control or a terminal for a conductive member connected to the electrode for the control for solving the above-mentioned problem. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2008218455A Lead frame and lead frame housing tool 审中-公开
标题翻译：引导框架和引线框架外壳工具
公开(公告)号：JP2008218455A
公开(公告)日：2008-09-18
申请号：JP2007049411
申请日：2007-02-28
申请人： Denso Corp , 株式会社デンソー
发明人： KUSAMA HIROTOSHI , MASAMITSU KUNIAKI , OKUMURA TOMOMI , YAGI KENJI
IPC分类号： H01L23/50 , H01L23/48
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent deformation of the shape of each of bonding wires by preventing the deformation of leads in a lead frame in which a semiconductor chip is attached on an island and the semiconductor chip is wire-bonded with the leads. SOLUTION: A thick reinforcing protrusion 15 is formed on the external circumferential portion of the lead frame 16. The semiconductor chip is mounted on the island (lower terminal 3), and the semiconductor chip is connected to the leads 5 via bonding wires. With this configuration, if a force deforming the lead frame body is applied in handling the lead frame, the reinforcing function of the reinforcing protrusion 15 prevents the actual deformation of the lead frame body 16. The deformation or displacement of the leads 5 is thereby prevented and the deformation of the bonding wires connecting the leads 5 to the semiconductor is also prevented. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止每个接合线的形状的变形，通过防止半导体芯片附着在岛上的引线框架中的引线变形，并且半导体芯片与引线接合。解决方案：在引线框架16的外周部分上形成厚的加强突起15.半导体芯片安装在岛（下端子3）上，并且半导体芯片通过接合线连接到引线5 。通过这种结构，如果在处理引线框架时施加使引线框体变形的力，则加强突起15的加强功能防止引线框体16的实际变形。由此防止引线5的变形或位移并且还防止了将引线5连接到半导体的接合线的变形。版权所有（C）2008，JPO＆INPIT

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