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1. 发明专利

JP2005123233A Cooling structure of semiconductor device 有权
标题翻译：半导体器件的冷却结构
公开(公告)号：JP2005123233A
公开(公告)日：2005-05-12
申请号：JP2003353412
申请日：2003-10-14
申请人： Denso Corp , 株式会社デンソー
发明人： KATO NOBUYUKI , NAKASE YOSHIMI , MASAMITSU KUNIAKI
IPC分类号： H01L23/40 , H01L23/29
CPC分类号： H01L24/33 , H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To prevent a semiconductor device from being relatively misaligned with a cooler in the cooling structure of the semiconductor device, wherein the semiconductor device which is equipped with a pair of heatsinks provided on both sides of a semiconductor chip and almost sealed up with resin is brought into contact with coolers via insulating materials. SOLUTION: The semiconductor device 100 is equipped with the semiconductor chip 10 and the heatsinks 20 and 30 bonded on both the sides of the semiconductor chip 10, entirely sealed up with resin 60, and brought into contact with the coolers 120 through the intermediary of the insulating materials 110 in the cooling structure of the semiconductor device. In the cooling structure of the semiconductor device, a wall-shaped guide 150 for regulating a relative positional relation between the semiconductor device 100 and the cooler 120 is provided to the upper and lower surface of the semiconductor device 100, respectively. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止半导体器件与半导体器件的冷却结构中的冷却器相对不对准，其中装备有设置在半导体芯片的两侧的一对散热器的半导体器件和几乎用树脂密封，通过绝缘材料与冷却器接触。解决方案：半导体器件100配备有半导体芯片10和结合在半导体芯片10的两侧上的散热器20和30，其完全用树脂60密封，并且通过该半导体芯片10与冷却器120接触半导体器件的冷却结构中的绝缘材料110的介质。在半导体器件的冷却结构中，分别在半导体器件100的上表面和下表面上设置用于调节半导体器件100和冷却器120之间的相对位置关系的壁形引导件150。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005268496A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005268496A
公开(公告)日：2005-09-29
申请号：JP2004078243
申请日：2004-03-18
申请人： Denso Corp , 株式会社デンソー
发明人： MIURA SHOJI , OZEKI YOSHIHIKO , NAKASE YOSHIMI , KATO NOBUYUKI
IPC分类号： H01L23/40
CPC分类号： H01L24/33 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To employ a structure of radiating heat from both upper and lower faces of a semiconductor element, while obtaining a sufficient heat radiation performance. SOLUTION: A semiconductor device 11 is constituted in such a way that two heatsinks 13, 14 are solder-joined to upper and lower faces of a semiconductor element 12, by interposing a radiation block 15 having an external shape which is smaller than the semiconductor element 12, between the upper face of the semiconductor element 12 and the upper heatsink 14. A region where a channel of a main cell is formed or a region where a channel current of the main cell flows on the upper face of the semiconductor element 12 is disposed below the radiation block 15, and also this structure is not formed away from the end of the radiation block 15 by about 1.0 mm or more. With this structure, a radiation path of heat generated in the main cell is directed to a vertical direction of the element, thereby obtaining the sufficient heat radiation performance. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：采用从半导体元件的上表面和下表面散热的结构，同时获得足够的散热性能。解决方案：半导体器件11被构造成使得两个散热器13,14被焊接到半导体元件12的上表面和下表面，通过插入具有小于半导体元件12，位于半导体元件12的上表面和上部散热器14之间。形成主单元的沟道的区域或主单元的沟道电流在半导体的上表面上流动的区域元件12设置在辐射块15的下方，并且也不将该结构远离辐射块15的端部形成大约1.0mm或更大。利用这种结构，在主单元中产生的热的辐射路径被引向元件的垂直方向，从而获得足够的散热性能。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005136018A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005136018A
公开(公告)日：2005-05-26
申请号：JP2003368347
申请日：2003-10-29
申请人： Denso Corp , 株式会社デンソー
发明人： NAKASE YOSHIMI , SAKAMOTO ZENJI
IPC分类号： H01L23/36 , H01L21/60 , H01L23/34 , H01L23/42 , H01L23/488 , H01L23/492 , H01L23/498 , H01L29/06
CPC分类号： H01L23/42 , H01L23/36 , H01L23/492 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/291 , H01L2224/2919 , H01L2224/292 , H01L2224/29298 , H01L2224/32057 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83051 , H01L2224/83101 , H01L2224/83136 , H01L2224/83385 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device comprising a lower heat sink, a semiconductor chip, a heat sink block and an upper heat sink bonded sequentially through a solder layer in which variation in the physical size of the device due to dimensional tolerance of components is prevented appropriately while ensuring the thickness of each solder layer appropriately. SOLUTION: In the semiconductor device S1 comprising a lower heat sink 20, a first solder layer 51, a semiconductor chip 10, a second solder layer 52, a heat sink block 40, a third solder layer 53, and an upper heat sink 30 laid in layers sequentially and bonded through respective solder layers 51-53, spherical granular metal 80 is provided between the semiconductor chip 10 and the lower heat sink 20 and between the semiconductor chip 10 and the heat sink block 40 as a supporting means for keeping a specified interval between them. The upper heat sink 30 is provided with a groove 90 as a means for absorbing surplus solder protruding from the third solder layer 53. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得包括下部散热器，半导体芯片，散热块和上部散热器的半导体器件，其顺序地通过焊料层接合，其中由于器件的物理尺寸的变化，由于在适当地确保每个焊料层的厚度的同时防止部件的尺寸公差。解决方案：在包括下散热器20，第一焊料层51，半导体芯片10，第二焊料层52，散热块40，第三焊料层53和上部热的半导体器件S1中槽30依次铺设并通过各个焊料层51-53粘合，球形颗粒金属80设置在半导体芯片10和下散热器20之间以及半导体芯片10和散热块40之间，作为支撑装置保持它们之间的指定间隔。上部散热器30设置有作为用于吸收从第三焊料层53突出的多余焊料的装置的凹槽90.版权所有：（C）2005，JPO＆NCIPI

4. 发明专利

JP2008078679A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2008078679A
公开(公告)日：2008-04-03
申请号：JP2007286138
申请日：2007-11-02
申请人： Denso Corp , 株式会社デンソー
发明人： HIRANO NAOHIKO , TEJIMA TAKANORI , MASAMITSU KUNIAKI , YAGI KENJI , NAKASE YOSHIMI , OKURA YASUTSUGU , NOMURA KAZUHITO , FUKUDA YUTAKA
IPC分类号： H01L23/29 , H01L23/48
CPC分类号： H01L24/33 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2924/1301 , H01L2924/13055 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a device from being damaged, when a large thermal stress is applied to the semiconductor device which enables the system to improve the long-term reliability. SOLUTION: The semiconductor device 1 is provided with a semiconductor chip 2 and a pair of heat sinks 3, 4 that perform radiation from both surfaces of the chip 2 and is configured to establish the relation t2/t1≥5, if the thickness dimension of the chip 2 is t1 and the thickness dimension of at least one heat sink 3 between a pair of the heat sinks 3, 4 is t2 in substantially the entire device which is molded with resin 7. That the device is not damaged is confirmed by a prototype and experiment, even if a large thermal stress is applied to the device 1 of the configuration. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够防止装置损坏的半导体装置，当对半导体装置施加大的热应力时，能够使系统提高长期可靠性。解决方案：半导体器件1设置有从芯片2的两个表面执行辐射的半导体芯片2和一对散热器3,4，并且被配置为建立关系t2 /t1≥5，如果芯片2的厚度尺寸为t1，并且在一对散热器3,4之间的至少一个散热器3的厚度尺寸基本上在用树脂7模制的整个装置中为t2。该装置未被损坏通过原型和实验证实，即使对构造的装置1施加大的热应力。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2005205418A Joined structure manufacturing method 审中-公开
标题翻译：接合结构制造方法
公开(公告)号：JP2005205418A
公开(公告)日：2005-08-04
申请号：JP2004011745
申请日：2004-01-20
申请人： Denso Corp , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー
发明人： NAKASE YOSHIMI , SAKAMOTO ZENJI , OSHIRO MASARU , KANO MICHIO , YOSHIDA TOMOMASA
IPC分类号： B23K1/00 , H01L21/58 , H01L21/60 , H01L23/48 , H01L23/52
CPC分类号： H01L24/83 , H01L24/29 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29298 , H01L2224/83101 , H01L2224/8385 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01068 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/1305 , H01L2924/13055 , H01L2924/15724 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： PROBLEM TO BE SOLVED: To inexpensively reduce voids in solder in a joined structure manufacturing method in which a first joining member and a second joining member are joined with each other via solder. SOLUTION: While an IGBT element 10 which is a first joining member and a ceramic substrate 20 which is a second joining member are brought into contact with each other via solder 30, both joining members are placed in an evacuated state at the temperature not higher than the solidus of the solder 30. Successively, in this evacuated state, both joining members are heated to the temperature not lower than the liquidus of the solder 30. Then, both joining members are pressurized at the temperature not lower than the liquidus of the solder 30 to the pressure P2 higher than the pressure P1 in the evacuated state, and the solder 30 is solidified in the pressurized state. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了廉价地减少在第一接合构件和第二接合构件通过焊料彼此接合的接合结构制造方法中的焊料中的空隙。解决方案：作为第一接合构件的IGBT元件10和作为第二接合构件的陶瓷基板20通过焊料30彼此接触，两个接合构件都处于处于抽真空状态的温度不高于焊料30的固相线。接着，在该抽真空状态下，将两个接合构件加热至不低于焊料30的液相线的温度。然后，两个接合构件在不低于液相线的温度下被加压焊料30的压力高于真空状态下的压力P1，焊料30在加压状态下固化。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005158871A Packaged semiconductor device 审中-公开
标题翻译：包装半导体器件
公开(公告)号：JP2005158871A
公开(公告)日：2005-06-16
申请号：JP2003392374
申请日：2003-11-21
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO TETSUJI , TEJIMA TAKANORI , NAKASE YOSHIMI
IPC分类号： H01L23/29 , H01L21/60
CPC分类号： H01L24/33 , H01L24/73 , H01L2224/32245 , H01L2224/33181 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To prevent molten solder from overflowing from the periphery of a semiconductor element and causing a short with a metal body joined to the rear face of the semiconductor element, which causes a malfunction. SOLUTION: Lengths Wb1 and Wb2 of longitudinal and lateral sides of a third metal body 5 are set not larger than lengths Wc1 and Wc2 of longitudinal and lateral sides of a facing emitter electrode 10. By this structure, when bonding the third metal body 5 to the emitter electrode 10 with solder 9b, the solder 9b is prevented from overflowing from the area of the emitter electrode 10, resulting in obtaining sufficient insulation for such a part which is needed to be insulated from the third metal body 5. For example, the solder 9b is prevented from going around to the rear face side of a semiconductor chip 2 and causing a short between a collector electrode and the emitter electrode 10 formed on the rear face of the semiconductor ship 2, which causes a malfunction. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止熔融焊料从半导体元件的周围溢出，并且在与半导体元件的背面接合的金属体导致短路，导致故障。解决方案：第三金属体5的纵向和横向侧的长度Wb1和Wb2被设定为不大于面对发射极10的纵向和横向侧的长度Wc1和Wc2。通过这种结构，当将第三金属主体5与焊料9b连接到发射极10，防止焊料9b从发射电极10的区域溢出，从而为需要与第三金属体5绝缘的部分获得足够的绝缘。对于例如，防止焊料9b绕过半导体芯片2的背面侧，并且在集电极与形成在半导体船2的背面上的发射电极10之间产生短路，导致故障。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005116962A Package type semiconductor device 有权
标题翻译：封装类型半导体器件
公开(公告)号：JP2005116962A
公开(公告)日：2005-04-28
申请号：JP2003352508
申请日：2003-10-10
申请人： Denso Corp , 株式会社デンソー
发明人： MIURA SHOJI , NIIMI AKIHIRO , TEJIMA TAKANORI , NAKASE YOSHIMI
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/336 , H01L23/00 , H01L23/29 , H01L23/433 , H01L23/482 , H01L29/739 , H01L29/78
CPC分类号： H01L24/33 , H01L23/4334 , H01L23/4824 , H01L23/564 , H01L24/48 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a package type semiconductor device which prevents a short circuit between an emitter electrode and a gate wiring layer and improves durability of the package type semiconductor device. SOLUTION: The package type semiconductor device is constituted so that the gate wiring layer 17 and a dummy wiring layer 18 electrically isolated may be formed between the emitter Al electrode 14 and the gate wiring layer 17. With such constitution, even if a Ni plated layer and a Au plated layer formed on a surface of the emitter Al electrode 14 slide, the Ni plated layer and the Au plated layer may be caught by the dummy wiring layer 18 to prevent the short circuit between the emitter Al electrode 14 and the gate wiring layer 17. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种防止发射电极和栅极布线层之间的短路并提高封装型半导体器件的耐久性的封装型半导体器件。解决方案：封装型半导体器件被构造成使得可以在发射极Al电极14和栅极布线层17之间形成电隔离的栅极布线层17和虚拟布线层18。利用这种结构，即使 Ni镀层和形成在发射极Al电极14的表面上的Au镀层滑动，Ni镀层和Au镀层可被虚拟布线层18捕获，以防止发射极Al电极14和栅极布线层17.版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005228929A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005228929A
公开(公告)日：2005-08-25
申请号：JP2004036441
申请日：2004-02-13
申请人： Denso Corp , 株式会社デンソー
发明人： KONDO TETSUJI , NAKASE YOSHIMI
IPC分类号： H01L23/29 , H01L25/04 , H01L25/18
CPC分类号： H01L24/33 , H01L2224/37147 , H01L2224/37599 , H01L2224/376 , H01L2224/37644 , H01L2224/40 , H01L2224/40137 , H01L2224/83801 , H01L2224/84801 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress the occurrence of the malfunction of a semiconductor element caused by the free movement of a third metallic body at the time of performing the final joining and can be suppressed in the fall of its service life, and to provide a method of manufacturing the device. SOLUTION: In the semiconductor device, the third metallic body 6 having not only a first region 11 facing semiconductor elements 1a and 1b, but also a second region 12 not facing the elements 1a and 1b is used. Then a first metallic body 3, a first bonding material 8, the semiconductor elements 1, a second bonding material 9, the third metallic body 6, a third bonding material 10, and a second metallic body 5 are set in a laminated state. At this time, a first holding jig (spacer) 21 is arranged between the first and third metallic bodies 3 and 6 so as to hold the second region 12 of the third metallic body 6. Then the metallic bodies 3, 6, and 5 and bonding materials 8, 9, and 10 are finally joined to each other by heating the bodies 3, 6, and 5 and materials 8, 9, and 10, and applying a pressure to the bodies 3, 6, and 5 and materials 8, 9, and 10 in a state where the first holding jig (spacer) 21 is arranged. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以抑制由于在进行最终接合时第三金属体的自由运动引起的半导体元件的故障的发生的半导体器件，并且可以在下降中抑制的使用寿命，并提供制造该装置的方法。解决方案：在半导体器件中，使用不仅具有面向半导体元件1a和1b的第一区域11，而且不具有面向元件1a和1b的第二区域12的第三金属体6。然后将第一金属体3，第一接合材料8，半导体元件1，第二接合材料9，第三金属体6，第三接合材料10和第二金属体5设置为层压状态。此时，第一保持夹具（间隔件）21布置在第一金属体3和第三金属体6之间，以便保持第三金属体6的第二区域12.然后金属体5,6和5以及通过加热主体5,6和5以及材料8,9和10，将粘合材料8,9和10最终彼此接合，并向主体5,6和5以及材料8,9施加压力，在布置第一保持夹具（间隔件）21的状态下，9和10。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005191071A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005191071A
公开(公告)日：2005-07-14
申请号：JP2003427311
申请日：2003-12-24
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI , NAKASE YOSHIMI
IPC分类号： H01L23/48 , H01L21/56 , H01L23/16 , H01L23/28 , H01L23/31 , H01L23/34 , H01L23/36 , H01L23/433 , H01L23/495
CPC分类号： H01L24/33 , H01L21/565 , H01L23/16 , H01L23/3107 , H01L23/4334 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/1815 , H01L2924/18301 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To prevent bubbles from being generated in a resin in a packaging part, as much as possible, in a semiconductor device of a resin molding type, having a reference terminal and heat sinks connected electrically/thermally to the main surfaces of the front and rear surfaces of a semiconductor chip, made of a vertical-type power element, etc. SOLUTION: The semiconductor device S1 is provided with the semiconductor chips 10, 11, the lower side heatsink 20 connected to the main rear surface side of the semiconductor chips 10, 11, and the upper-side heatsink 30 connected to the main front surface side of the semiconductor chips 10, 11, in such a manner that the substantially the entirety of the device is molded with a resin 80 molded by a mold. A hole 81 is provided as a resin flow disturbing part for disturbing the flow of the resin, at the molding of the resin 80, is provided in a thick part disposed at the periphery of the packaging part 90 of the resin 80. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止在包装部件中的树脂中产生气泡，尽可能地在具有参考端子和散热器的树脂模制型半导体器件中电气/热连接到由垂直型功率元件制成的半导体芯片的前表面和后表面的主表面等。解决方案：半导体器件S1设置有半导体芯片10,11，下侧散热器20连接到半导体芯片10,11的主后表面侧和连接到半导体芯片10,11的主表面侧的上侧散热片30以使得基本上整个器件被模制成由模具模制的树脂80。在树脂80的模制时，设置有作为树脂流动的树脂流动干扰部分的孔81设置在设置在树脂80的包装部分90的周边的较厚部分中。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005116875A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005116875A
公开(公告)日：2005-04-28
申请号：JP2003350814
申请日：2003-10-09
申请人： Denso Corp , 株式会社デンソー
发明人： KATO NOBUYUKI , HIRANO NAOHIKO , NAKASE YOSHIMI
IPC分类号： H01L23/36
CPC分类号： H01L24/33 , H01L24/32 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To appropriately improve the reliability of a bonding material interposed between a semiconductor chip and a heatsink block by specifying the dimension or shape of the heatsink block, in a semiconductor device in which heatsinks are respectively provided on both surface sides of the semiconductor chip and which is almost wholly molded with a resin. SOLUTION: The semiconductor device is constituted by respectively providing heatsinks 20 and 30 on both top and bottom surfaces of the semiconductor chip 10 through the bonding material 50, and providing the heatsink block 40 between the semiconductor chip 10 and upper heatsink 30 through the bonding material 50 so as to thermally and electrically connect the chip 10 and heatsink 30 to each other and molding almost whole body of the semiconductor device with the resin 60. The thickness of the heatsink block 40 is adjusted to 0.5-1.5 mm. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过规定散热块的尺寸或形状来适当地提高插入在半导体芯片和散热块之间的接合材料的可靠性，在分别设置散热片的两个表面上的散热器半导体芯片的侧面，并且几乎完全用树脂模制。解决方案：半导体器件通过分别通过接合材料50在半导体芯片10的顶表面和底表面上分别提供散热器20和30，并且在半导体芯片10和上散热片30之间提供散热块40，通过接合材料50，以将芯片10和散热片30彼此热电连接，并用树脂60模制半导体器件的几乎全部本体。将散热块40的厚度调整为0.5-1.5mm。版权所有（C）2005，JPO＆NCIPI

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