专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09123359B1 Magnetic recording transducer with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields and method of fabrication 有权
标题翻译：磁记录传感器，具有溅射反铁磁耦合三层电镀铁磁屏蔽和制造方法
公开(公告)号：US09123359B1
公开(公告)日：2015-09-01
申请号：US12976916
申请日：2010-12-22
申请人： Dehua Han , Ming Sun , Feng Liu , Jinqiu Zhang , Shaoping Li , Lieping Zhong , Xiaoqi Liu , Tao Pan
发明人： Dehua Han , Ming Sun , Feng Liu , Jinqiu Zhang , Shaoping Li , Lieping Zhong , Xiaoqi Liu , Tao Pan
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/315 , G11B5/3163
摘要： A magnetic recording transducer for use in a data storage device is described. The transducer has a main writer pole and magnetic shields adjacent to the main writer pole. The magnetic shields include a first plated soft ferromagnetic layer, a second plated soft ferromagnetic layer, and an antiferromagnetic coupling (AFC) trilayer between the first plated soft ferromagnetic layer and the second plated soft ferromagnetic layer. The AFC trilayer includes a first AFC layer of sputtered ferromagnetic material; a second AFC layer of a nonmagnetic antiferromagnetic exchange material, and a third AFC layer of sputtered ferromagnetic material. Shields with AFC trilayers in leading, side, and/or trailing shields, as well as between shields are provided. A method of fabricating is also provided.
摘要翻译：描述了用于数据存储装置的磁记录传感器。传感器有一个主要的写入极和磁屏蔽，靠近主要的写入极。磁屏蔽包括第一镀层软铁磁层，第二电镀软铁磁层和第一镀层软铁磁层与第二电镀软铁磁层之间的反铁磁耦合（AFC）三层。 AFC三层包括溅射铁磁材料的第一AFC层; 非磁性反铁磁交换材料的第二AFC层和溅射的铁磁材料的第三AFC层。提供了前导，侧面和/或尾部屏蔽以及屏蔽之间的AFC三层屏蔽罩。还提供了一种制造方法。

2. 发明授权

US08451563B1 Method for providing a side shield for a magnetic recording transducer using an air bridge 有权
标题翻译：用于使用空气桥提供用于磁记录换能器的侧屏蔽的方法
公开(公告)号：US08451563B1
公开(公告)日：2013-05-28
申请号：US13331208
申请日：2011-12-20
申请人： Jinqiu Zhang , Feng Liu , Shaoping Li , Ming Sun
发明人： Jinqiu Zhang , Feng Liu , Shaoping Li , Ming Sun
IPC分类号： G11B5/17 , G11B5/127
CPC分类号： G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49044
摘要： A method fabricates a side shield for a magnetic transducer having a nonmagnetic layer and an ABS location corresponding to an ABS. The nonmagnetic layer has a pole trench therein. The pole trench has a shape and location corresponding to the pole. A wet etchable layer is deposited. Part of the wet etchable layer resides in the pole trench. A pole is formed. The pole has a bottom and a top wider than the bottom in the pole tip region. Part of the pole in the pole tip region is in the pole trench on at least part of the wet etchable layer. At least parts of the wet etchable layer and the nonmagnetic layer are removed, forming an air bridge. The air bridge is between part of the pole at the ABS location and an underlying layer. Side shield layer(s) that substantially fill the air bridge are deposited.
摘要翻译：一种制造用于具有对应于ABS的非磁性层和ABS位置的磁换能器的侧屏蔽的方法。非磁性层在其中具有极沟槽。极沟具有对应于极的形状和位置。沉积湿蚀刻层。湿蚀刻层的一部分位于极沟槽中。一个极点形成。电极具有底部和顶部宽于电极尖端区域中的底部。极尖区域中的极的一部分在至少部分湿蚀刻层的极沟中。去除湿蚀刻层和非磁性层的至少一部分，形成空气桥。空气桥在ABS位置的极点的一部分和下层之间。基本上填充空气桥的侧面屏蔽层被沉积。

3. 发明授权

US08582238B1 Systems and methods for providing perpendicular magnetic writers having gradient magnetic moment side shields 有权
标题翻译：用于提供具有梯度磁矩侧屏蔽的垂直磁性写入器的系统和方法
公开(公告)号：US08582238B1
公开(公告)日：2013-11-12
申请号：US13279105
申请日：2011-10-21
申请人： Feng Liu , Zhigang Bai , Dehua Han , Ming Sun , Yugang Wang , Tao Pan
发明人： Feng Liu , Zhigang Bai , Dehua Han , Ming Sun , Yugang Wang , Tao Pan
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/3116 , G11B5/315
摘要： Systems and methods for providing perpendicular magnetic writers having gradient magnetic moment side shields are provided. In one case, the system includes a pole having a leading edge and trailing edge, a leading shield positioned closer to the leading edge than the trailing edge, the leading shield having a leading shield moment, a trailing shield positioned closer to the trailing edge than the leading edge, the trailing shield having a trailing shield moment greater than the leading shield moment, and a side shield positioned along side of the pole, the side shield including a gradient magnetic moment progressing from a first side shield moment to a second side shield moment, where the first side shield moment is about equal to the leading shield moment, and where the second side shield moment is about equal to the trailing shield moment and positioned closer to the trailing shield than the leading shield.
摘要翻译：提供了用于提供具有梯度磁矩侧屏蔽的垂直磁性写入器的系统和方法。在一种情况下，系统包括具有前缘和后缘的杆，位于比后缘更靠近前缘的前护罩，前护罩具有前屏蔽力矩，位于靠近后缘的后挡板比所述前缘，所述后挡板具有大于所述前屏蔽力矩的后屏蔽力矩，以及沿所述杆的侧面定位的侧屏蔽，所述侧屏蔽包括从第一侧屏蔽力矩到第二侧屏蔽的梯度磁矩其中第一侧面屏蔽力矩大约等于前导屏蔽力矩，并且其中第二侧面屏蔽力矩大约等于尾部屏蔽力矩，并且位于比前导屏蔽件更靠近尾部屏蔽件的位置。

4. 发明授权

US08441756B1 Method and system for providing an antiferromagnetically coupled writer 有权
标题翻译：提供反铁磁耦合作者的方法和系统
公开(公告)号：US08441756B1
公开(公告)日：2013-05-14
申请号：US12970423
申请日：2010-12-16
申请人： Ming Sun , Dehua Han , Jose A. Medina , Ming Jiang , Ying Hong , Feng Liu , Jian X. Shen
发明人： Ming Sun , Dehua Han , Jose A. Medina , Ming Jiang , Ying Hong , Feng Liu , Jian X. Shen
IPC分类号： G11B5/39
CPC分类号： G11B5/187 , G11B5/3116 , G11B5/3163
摘要： A method and system for fabricating a magnetic transducer are described. The magnetic transducer includes a pole and a nonmagnetic intermediate layer adjacent to the pole. The pole has a paddle and a pole tip including a plurality of sidewalls. The pole includes a first magnetic pole layer, at least one antiferromagnetic coupling (AFC) structure on the first magnetic pole layer, and a second magnetic pole layer on the AFC structure(s). At least a portion of the first magnetic pole layer resides on the sidewalls of the pole tip. The paddle has a paddle width in a track width direction. The pole tip has a pole tip width in a track width direction that is less than the paddle width.
摘要翻译：描述了用于制造磁换能器的方法和系统。磁换能器包括极和邻近极的非磁性中间层。极具有桨和包括多个侧壁的极尖。所述极包括第一磁极层，在所述第一磁极层上的至少一个反铁磁耦合（AFC）结构和所述AFC结构上的第二磁极层。第一磁极层的至少一部分位于极尖的侧壁上。桨叶在轨道宽度方向上具有桨叶宽度。极尖具有小于桨宽度的轨道宽度方向上的极尖宽度。

5. 发明授权

US08760819B1 Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields 有权
标题翻译：磁性记录传感器与电镀铁磁屏蔽之间的溅射反铁磁耦合三层
公开(公告)号：US08760819B1
公开(公告)日：2014-06-24
申请号：US12978145
申请日：2010-12-23
申请人： Feng Liu , Dehua Han , Ming Sun , Yimin Guo
发明人： Feng Liu , Dehua Han , Ming Sun , Yimin Guo
IPC分类号： G11B5/11 , G11B5/33
CPC分类号： G11B5/3912
摘要： A magnetic recording sensor for use in a data storage device is described. The sensor has a magnetoresistive sensing element and magnetic shields shielding the magnetoresistive sensing element. The magnetic shields include a first plated soft ferromagnetic layer, a second plated soft ferromagnetic layer, and an antiferromagnetic coupling (AFC) trilayer between the first plated soft ferromagnetic layer and the second plated soft ferromagnetic layer. The AFC trilayer includes a first AFC layer of sputtered ferromagnetic material; a second AFC layer of a nonmagnetic antiferromagnetic exchange material, and a third AFC layer of sputtered ferromagnetic material. Shields with AFC trilayers in bottom, side, and/or top shields, and well as between shields are provided. A method of fabricating is also provided.
摘要翻译：描述了用于数据存储装置的磁记录传感器。传感器具有磁阻感测元件和屏蔽磁阻感测元件的磁屏蔽。磁屏蔽包括第一镀层软铁磁层，第二电镀软铁磁层和第一镀层软铁磁层与第二电镀软铁磁层之间的反铁磁耦合（AFC）三层。 AFC三层包括溅射铁磁材料的第一AFC层; 非磁性反铁磁交换材料的第二AFC层和溅射的铁磁材料的第三AFC层。提供了在底部，侧面和/或顶部屏蔽以及屏蔽之间的AFC三层玻璃的屏蔽。还提供了一种制造方法。

6. 发明授权

US09731242B2 Pressure swing adsorption device 有权
公开(公告)号：US09731242B2
公开(公告)日：2017-08-15
申请号：US15028478
申请日：2013-11-06
申请人： XiaoShan Zhou , Ming Sun , Ji Lei
发明人： XiaoShan Zhou , Ming Sun , Ji Lei
IPC分类号： B01D53/047 , B01D53/06
CPC分类号： B01D53/06 , B01D53/047 , B01D2253/108 , B01D2253/116 , B01D2259/40003
摘要： A pressure swing adsorption apparatus having: a housing with an arc-shaped inner surface, the housing being arranged with at least one gas inlet, at least one exhaust port and at least one gas outlet for discharging the separated gas; a rotor arranged in the housing, at least two contact ends being arranged on the rotor for maintaining a non-stop sliding contact with the inner surface of the housing, individual cavities, i.e., air cavities between the adjacent contact ends and formed between the external surface of the rotor and the inner surface of the housing, and each air cavity being separated by the contact ends; adsorption chambers set inside the rotor as parts of the rotor and rotated along with the rotor, molecular sieves being loaded in the interior of the adsorption chambers, and the adsorption chambers being provided with screen openings for connection with the air cavities.

7. 发明授权

US08680658B2 Conductive clip for semiconductor device package 有权
标题翻译：半导体器件封装用导电夹
公开(公告)号：US08680658B2
公开(公告)日：2014-03-25
申请号：US12130663
申请日：2008-05-30
申请人： Lei Shi , Kai Liu , Ming Sun
发明人： Lei Shi , Kai Liu , Ming Sun
IPC分类号： H01L23/495
CPC分类号： H01L23/49524 , H01L23/4334 , H01L23/49551 , H01L23/49562 , H01L23/49568 , H01L23/544 , H01L24/28 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2223/54486 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/451 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/73219 , H01L2224/73221 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45099 , H01L2224/05599
摘要： A clip for a semiconductor device package may include two or more separate electrically conductive fingers electrically connected to each other by one or more electrically conductive bridges. A first end of at least finger is adapted for electrical contact with a lead frame. The bridges are adapted to provide electrical connection to a top semiconductor region of a semiconductor device and may also to provide heat dissipation path when a top surface of the fingers is exposed. A semiconductor device package may include the clip along with a semiconductor device and a lead frame. The semiconductor device may have a first and semiconductor regions on top and bottom surfaces respectively. The clip may be electrically connected to the top semiconductor region at the bridges and electrically connected to the lead frame at a first end of at least one of the fingers.
摘要翻译：用于半导体器件封装的夹子可以包括通过一个或多个导电桥彼此电连接的两个或更多个分离的导电指状物。至少手指的第一端适于与引线框架电接触。桥适于提供与半导体器件的顶部半导体区域的电连接，并且还可以在手指的顶表面暴露时提供散热路径。半导体器件封装可以包括夹子以及半导体器件和引线框架。半导体器件可以分别在顶表面和底表面上具有第一半导体区域和半导体区域。夹子可以在桥接处电连接到顶部半导体区域，并且在至少一个手指的第一端处电连接到引线框架。

8. 发明授权

US08670211B1 Method and system for providing high magnetic flux saturation CoFe films 失效
标题翻译：提供高磁通饱和CoFe膜的方法和系统
公开(公告)号：US08670211B1
公开(公告)日：2014-03-11
申请号：US13164991
申请日：2011-06-21
申请人： Ming Sun , Jose A. Medina , Keith Y. Sasaki , Ming Jiang
发明人： Ming Sun , Jose A. Medina , Keith Y. Sasaki , Ming Jiang
IPC分类号： G11B5/127 , C25D3/00
CPC分类号： G11B5/3143 , C25D3/562 , C25D5/18 , C25D7/001 , G11B5/3163 , H01F41/26
摘要： A method and system plates CoFeX, where X is an insertion metal. The method and system include providing a plating solution including hydroxymethyl-p-tolylsulfone (HPT). The plating solution being configured to provide a CoFeX film having a high saturation magnetic flux density of greater than 2.3 Tesla and not more than 3 weight percent of X. The method and system also include plating the CoFeX film on a substrate in the plating solution. In some aspects, the plated CoFeX film may be used in structures such as main poles of a magnetic recording head.
摘要翻译：一种方法和系统板CoFeX，其中X是插入金属。该方法和系统包括提供包含羟甲基对甲苯砜（HPT）的电镀溶液。电镀溶液被配置为提供具有大于2.3特斯拉的高饱和磁通密度和不大于X重量百分比的X的高的饱和磁通密度的CoFeX膜。该方法和系统还包括在电镀液中的基底上电镀CoFeX膜。在一些方面，电镀CoFeX膜可以用于诸如磁记录头的主极的结构中。

9. 发明授权

US08497160B2 Method for making solder-top enhanced semiconductor device of low parasitic packaging impedance 有权
标题翻译：制造焊接顶部增强型半导体器件的低寄生封装阻抗的方法
公开(公告)号：US08497160B2
公开(公告)日：2013-07-30
申请号：US13560786
申请日：2012-07-27
申请人： François Hébert , Anup Bhalla , Kai Liu , Ming Sun
发明人： François Hébert , Anup Bhalla , Kai Liu , Ming Sun
IPC分类号： H01L21/60
CPC分类号： H01L24/40 , H01L23/4952 , H01L23/49562 , H01L23/64 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/05624 , H01L2224/29101 , H01L2224/29111 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/4103 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/83194 , H01L2224/83801 , H01L2224/84801 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01067 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/157 , H01L2924/181 , H01L2924/19043 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/37099
摘要： A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes lithographically patterning the top metal layer into the contact zones and the contact enhancement zones; then forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.
摘要翻译：提出了一种焊顶增强型半导体器件进行封装。焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。至少一个接触区域电连接到至少一个接触增强区域。每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。制造焊料顶部器件的方法包括将顶部金属层光刻地图案化成接触区域和接触增强区域; 然后使用用于增加的复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

10. 发明申请

US20130006982A1 Storing Method of Performance Data and System Thereof 有权
标题翻译：性能数据及其系统的存储方法
公开(公告)号：US20130006982A1
公开(公告)日：2013-01-03
申请号：US13497857
申请日：2010-06-03
申请人： Ming Sun
发明人： Ming Sun
IPC分类号： G06F17/30
CPC分类号： G06F11/3476 , G06F11/3409 , G06F17/30339 , H04L41/0823 , H04L41/0853
摘要： A method and system for storing performance data are disclosed, and the method includes: during a process of adding a collection point, a system creating a data subtable in real time according to the number of added collection points and a predetermined maximum number of collection points of the data subtable; and storing the performance data of the collection point into the created data subtable, and storing the corresponding relationship between the collection point and the data subtable.
摘要翻译：公开了一种存储性能数据的方法和系统，该方法包括：在添加收集点的过程中，根据添加的收集点的数量和预定的最大数量的收集点，实时地生成数据的系统的数据子表; 并将所述收集点的演奏数据存储在所生成的数据中，并且存储所述收集点和所述数据之间的对应关系。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式