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    • 3. 发明授权
    • Method and system for providing a magnetic transducer having a high moment bilayer magnetic seed layer for a trailing shield
    • 用于提供具有用于后盾的高力矩双层磁性种子层的磁换能器的方法和系统
    • US08582241B1
    • 2013-11-12
    • US13479095
    • 2012-05-23
    • Chengtao R. YuDehua HanYing HongFeng LiuBo ZhangTao Pan
    • Chengtao R. YuDehua HanYing HongFeng LiuBo ZhangTao Pan
    • G11B5/147
    • G11B5/1278G11B5/3116G11B5/315
    • A method and system for providing a magnetic read transducer is described. The magnetic recording transducer includes a write pole, a nonmagnetic gap, a magnetic seed layer, a trailing shield and coil(s) that energize the write pole. The write pole is configured to write to a media. The nonmagnetic gap is between the write pole and the magnetic seed layer. The magnetic seed layer includes a high moment layer and a magnetic buffer layer. The high moment layer is between the nonmagnetic gap and the magnetic buffer layer. The high moment layer has a saturation magnetization greater than 2.3 T and a first corrosion potential. The magnetic buffer layer has a second corrosion potential less than the first corrosion potential. The magnetic seed layer is between the trailing shield and the nonmagnetic gap layer. The magnetic buffer layer is between the trailing shield and the high moment layer.
    • 描述了一种用于提供磁读取换能器的方法和系统。 磁记录换能器包括对写磁极通电的写磁极,非磁性间隙,磁性种子层,后屏蔽和线圈。 写极被配置为写入介质。 非磁性间隙位于写极和磁性种子层之间。 磁性种子层包括高力矩层和磁性缓冲层。 高磁矩层位于非磁性间隙和磁性缓冲层之间。 高力矩层具有大于2.3T的饱和磁化强度和第一腐蚀电位。 磁缓冲层具有小于第一腐蚀电位的第二腐蚀电位。 磁性种子层位于尾部屏蔽和非磁性间隙层之间。 磁缓冲层位于后盾和高力矩层之间。
    • 6. 发明申请
    • PROTECTING HARD BIAS MAGNETS DURING A CMP PROCESS USING A SACRIFICIAL LAYER
    • 在CMP工艺中使用真空层保护硬偏置磁体
    • US20090169732A1
    • 2009-07-02
    • US11965648
    • 2007-12-27
    • Ying HongMing JiangJohn Westwood
    • Ying HongMing JiangJohn Westwood
    • B05D5/12G11B5/39
    • G11B5/3909B82Y10/00B82Y25/00G11B5/3163G11B5/3932
    • Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic sacrificial layer is deposited on top of the hard bias material. When a CMP process is subsequently performed, the sacrificial layer is polished instead of the hard bias material. The thicknesses of the hard bias magnets are not affected by the CMP process, but are rather defined by the deposition process of the hard bias material. As a result, the variations in the CMP process will not negatively affect the magnetic properties of the hard bias magnets so that they are able to provide substantially uniform effective magnetic fields to bias the free layer of the magnetoresistance (MR) sensor of the read element.
    • 公开了读取元件和相关联的制造方法。 在读取元件的制造期间,更具体地说,硬质偏置磁体的制造中,非磁性牺牲层沉积在硬偏置材料的顶部上。 当随后执行CMP处理时,牺牲层被抛光而不是硬偏置材料。 硬偏置磁体的厚度不受CMP工艺的影响,而是由硬偏压材料的沉积过程限定。 结果,CMP工艺的变化不会对硬偏磁体的磁性能产生负面影响,使得它们能够提供基本上均匀的有效磁场,以偏置读取元件的磁阻(MR)传感器的自由层 。
    • 8. 发明申请
    • METHODS FOR FABRICATING A MAGNETIC HEAD READER USING A CHEMICAL MECHANICAL POLISHING (CMP) PROCESS FOR SENSOR STRIPE HEIGHT PATTERNING
    • 使用化学机械抛光(CMP)方法制造磁头阅读器的方法用于传感器条带高度图案
    • US20080274623A1
    • 2008-11-06
    • US11743404
    • 2007-05-02
    • Hung-Chin GuthrieYing HongMing Jiang
    • Hung-Chin GuthrieYing HongMing Jiang
    • H01L21/302
    • G11B5/3163G11B5/3169
    • Methods for fabricating TMR and CPP GMR magnetic heads using a chemical mechanical polishing (CMP) process with a patterned CMP conductive protective layer for sensor stripe height patterning. The method comprises defining a stripe height of a read sensor of a magnetic head reader. The method further comprises refill depositing an insulator layer on the read sensor. The method further comprises performing a CMP process down to the conductive protective layer on the read sensor deposited while defining the read sensor to remove an overfill portion of the insulator layer above the conductive protective layer and to remove a sensor pattern masking structure on the conductive protective layer. As a result, the insulator layer is planarized and smooth with the read sensor, eliminating fencing and alumina bumps typically encountered in the insulator layer at the edge of the patterned sensor.
    • 使用化学机械抛光(CMP)工艺制造TMR和CPP GMR磁头的方法,具有用于传感器条纹高度图案化的图案化CMP导电保护层。 该方法包括定义磁头读取器的读取传感器的条带高度。 该方法还包括在读取的传感器上填充沉积绝缘体层。 该方法还包括在限定读取的传感器的同时,在读取的传感器上执行CMP处理,以去除传感器保护层上方的绝缘体层的过度填充部分,并且去除导电保护层上的传感器图案掩蔽结构 层。 结果,绝缘体层与读取传感器平坦化并且平滑,消除了在图案化传感器的边缘处的绝缘体层中通常遇到的栅栏和氧化铝凸块。
    • 10. 发明授权
    • Protecting hard bias magnets during a CMP process using a sacrificial layer
    • 在使用牺牲层的CMP工艺期间保护硬偏磁体
    • US08749925B2
    • 2014-06-10
    • US11965648
    • 2007-12-27
    • Ying HongMing JiangJohn Westwood
    • Ying HongMing JiangJohn Westwood
    • G11B5/33
    • G11B5/3909B82Y10/00B82Y25/00G11B5/3163G11B5/3932
    • Read elements and associated methods of fabrication are disclosed. During fabrication of the read element, and more particularly, the fabrication of the hard bias magnets, a non-magnetic sacrificial layer is deposited on top of the hard bias material. When a CMP process is subsequently performed, the sacrificial layer is polished instead of the hard bias material. The thicknesses of the hard bias magnets are not affected by the CMP process, but are rather defined by the deposition process of the hard bias material. As a result, the variations in the CMP process will not negatively affect the magnetic properties of the hard bias magnets so that they are able to provide substantially uniform effective magnetic fields to bias the free layer of the magnetoresistance (MR) sensor of the read element.
    • 公开了读取元件和相关联的制造方法。 在读取元件的制造期间,更具体地说,硬质偏置磁体的制造中,非磁性牺牲层沉积在硬偏置材料的顶部上。 当随后执行CMP处理时,牺牲层被抛光而不是硬偏置材料。 硬偏置磁体的厚度不受CMP工艺的影响,而是由硬偏压材料的沉积过程限定。 结果,CMP工艺的变化不会对硬偏磁体的磁性能产生负面影响,使得它们能够提供基本上均匀的有效磁场,以偏置读取元件的磁阻(MR)传感器的自由层 。