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1. 发明授权

US08213954B2 Method for addressing user location errors in a cognitive radio system 有权
标题翻译：在认知无线电系统中解决用户位置错误的方法
公开(公告)号：US08213954B2
公开(公告)日：2012-07-03
申请号：US11845940
申请日：2007-08-28
申请人： David P. Gurney , Wayne W. Chiou , Randy L. Ekl , Douglas H. Weisman
发明人： David P. Gurney , Wayne W. Chiou , Randy L. Ekl , Douglas H. Weisman
IPC分类号： H04W24/00
CPC分类号： H04W16/14 , H04W24/02
摘要： A cognitive radio (CR) system (102) includes CR units (108, 110) that determine and update location-based system operating parameters to avoid interference with other systems operating in the same frequency band. Operational Location Uncertainty region and Allowed Location Error regions can be applied. The CR unit trades off between both, available channels and maximum system operating parameters, such that as Location Uncertainty of the CR device increases, available CR channels and location-based CR system operating parameters decrease over a maximum network reach.
摘要翻译：认知无线电（CR）系统（102）包括CR单元（108,110），其确定和更新基于位置的系统操作参数，以避免与在相同频带中工作的其他系统的干扰。操作位置不确定区域和允许位置错误区域可以应用。 CR单元在两个可用信道和最大系统操作参数之间进行交易，使得当CR设备的位置不确定性增加时，可用CR信道和基于位置的CR系统操作参数在最大网络范围内减小。

2. 发明申请

US20090061779A1 METHOD FOR ADDRESSING USER LOCATION ERRORS IN A COGNITIVE RADIO SYSTEM 有权
标题翻译：用于在认知无线电系统中寻址用户位置错误的方法
公开(公告)号：US20090061779A1
公开(公告)日：2009-03-05
申请号：US11845940
申请日：2007-08-28
申请人： David P. Gurney , Wayne W. Chiou , Randy L. Ekl , Douglas H. Weisman
发明人： David P. Gurney , Wayne W. Chiou , Randy L. Ekl , Douglas H. Weisman
IPC分类号： H04B15/00 , H04B1/00
CPC分类号： H04W16/14 , H04W24/02
摘要： A cognitive radio (CR) system (102) includes CR units (108, 110) that determine and update location-based system operating parameters to avoid interference with other systems operating in the same frequency band. Operational Location Uncertainty region and Allowed Location Error regions can be applied. The CR unit trades off between both, available channels and maximum system operating parameters, such that as Location Uncertainty of the CR device increases, available CR channels and location-based CR system operating parameters decrease over a maximum network reach.
摘要翻译：认知无线电（CR）系统（102）包括CR单元（108,110），其确定和更新基于位置的系统操作参数，以避免与在相同频带中工作的其他系统的干扰。操作位置不确定区域和允许位置错误区域可以应用。 CR单元在两个可用信道和最大系统操作参数之间进行交易，使得当CR设备的位置不确定性增加时，可用CR信道和基于位置的CR系统操作参数在最大网络范围内减小。

3. 发明授权

US07417517B2 Method and apparatus for a communications filter 有权
标题翻译：通信滤波器的方法和装置
公开(公告)号：US07417517B2
公开(公告)日：2008-08-26
申请号：US11457238
申请日：2006-07-13
申请人： Gilberto J. Hernandez , Edgar H. Callaway, Jr. , Douglas H. Weisman
发明人： Gilberto J. Hernandez , Edgar H. Callaway, Jr. , Douglas H. Weisman
IPC分类号： H01P1/20
CPC分类号： H01P1/203
摘要： A method and apparatus for a highpass filter structure using transmission line construction which has multiple output tabs for selection of corner frequencies utilizing a plurality of resonators coupled to the transmission line. The transmission line has a characteristic impedance which increases exponentially with respect to a distance from the input.
摘要翻译：一种使用传输线结构的高通滤波器结构的方法和装置，其具有多个输出接头，用于利用耦合到传输线的多个谐振器来选择拐角频率。传输线具有相对于距离输入的距离指数地增加的特性阻抗。

4. 发明授权

US6008102A Method of forming a three-dimensional integrated inductor 失效
标题翻译：形成三维集成电感的方法
公开(公告)号：US6008102A
公开(公告)日：1999-12-28
申请号：US56967
申请日：1998-04-09
申请人： Ronald C. Alford , Robert E. Stengel , Douglas H. Weisman , George W. Marlin
发明人： Ronald C. Alford , Robert E. Stengel , Douglas H. Weisman , George W. Marlin
IPC分类号： H01L21/02 , H01L23/522 , H01L29/00
CPC分类号： H01L28/10 , H01L23/5227 , H01L2924/0002 , Y10T29/4902
摘要： A three-dimensional inductor coil is fabricated on top of a semiconductor substrate. The fabrication process includes the steps of depositing a first photoresist layer (406), forming a trench therein, and filling the trench with electroplated metal (404). A second photoresist layer (408) is deposited, and first and second trenches (410) are formed therein and filled with electroplated metal (412). A third photoresist layer (416) is deposited and a trench (418) formed therein, and then filled with electroplated metal (420). The first, second, and third photoresist layers (406, 408, 416) are then removed to expose a multi-loop inductor coil (500, 550).
摘要翻译：在半导体衬底的顶部上制造三维感应线圈。制造工艺包括沉积第一光致抗蚀剂层（406），在其中形成沟槽以及用电镀金属（404）填充沟槽的步骤。沉积第二光致抗蚀剂层（408），并且在其中形成第一和第二沟槽（410）并填充有电镀金属（412）。沉积第三光致抗蚀剂层（416）并在其中形成沟槽（418），然后用电镀金属（420）填充。然后去除第一，第二和第三光致抗蚀剂层（406,408,416）以暴露多回路感应线圈（500,550）。

5. 发明授权

US5591480A Method for fabricating metallization patterns on an electronic substrate 失效
标题翻译：在电子基板上制造金属化图案的方法
公开(公告)号：US5591480A
公开(公告)日：1997-01-07
申请号：US517392
申请日：1995-08-21
申请人： Douglas H. Weisman , Thomas J. Swirbel , John K. Arledge
发明人： Douglas H. Weisman , Thomas J. Swirbel , John K. Arledge
IPC分类号： G02F1/1345 , H01L21/48 , H03H3/08 , H05K3/06 , H05K3/24 , B05D5/12 , C23C14/00 , C25D5/02 , H01L21/465
CPC分类号： H05K3/243 , H01L21/4846 , H03H3/08 , G02F1/1345 , H05K2201/0326 , H05K2203/0384 , H05K2203/095 , H05K3/062 , H05K3/064
摘要： One method for fabricating solderable pads (406) onto a substrate (220) for direct chip attachment uses a multilayer metallization coating (500). The coating has a bottom layer (202) of indium-tin oxide, with an intermediate layer (204) of copper and a top layer (206) of indium-tin oxide. A masking layer (208) is deposited on the active display area (402) of the substrate, leaving the bonding pads uncovered. The revealed bonding pads are then plasma etched, using the polyimide as an etch resist, and the top layer of ITO is selectively removed to reveal the underlying copper layer. The exposed copper layer (204) is then plated with a solderable metal to the desired thickness to form bonding pads that may be used with direct chip attachment schemes.
摘要翻译：用于将可焊焊盘（406）制造到用于直接芯片附接的基板（220）上的一种方法使用多层金属化涂层（500）。涂层具有铟锡氧化物的底层（202），其中铜的中间层（204）和氧化铟锡的顶层（206）。掩模层（208）沉积在衬底的有源显示区域（402）上，留下焊盘未被覆盖。然后使用聚酰亚胺作为抗蚀剂，然后等离子体蚀刻所揭示的接合焊盘，并且选择性地去除ITO的顶层以露出下面的铜层。然后将暴露的铜层（204）用可焊接金属镀覆至所需厚度，以形成可与直接芯片附接方案一起使用的焊盘。

6. 发明授权

US06309912B1 Method of interconnecting an embedded integrated circuit 有权
标题翻译：互连嵌入式集成电路的方法
公开(公告)号：US06309912B1
公开(公告)日：2001-10-30
申请号：US09597215
申请日：2000-06-20
申请人： Wayne Wen-Haw Chiou , Douglas H. Weisman , Kenneth D. Cornett
发明人： Wayne Wen-Haw Chiou , Douglas H. Weisman , Kenneth D. Cornett
IPC分类号： H01L2144
CPC分类号： H01L23/5389 , H01L21/52 , H01L23/13 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/82 , H01L24/83 , H01L2224/24225 , H01L2224/24227 , H01L2224/2919 , H01L2224/32225 , H01L2224/73267 , H01L2224/8319 , H01L2224/83855 , H01L2224/92244 , H01L2924/01006 , H01L2924/01011 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/30105 , H01L2924/30107 , H01L2924/00
摘要： A method of interconnecting electrical terminations (12) of an integrated circuit die (30) to corresponding circuit traces (22) of a circuit carrying substrate (20). The die is placed in a cavity (24) in the substrate such that the electrical terminations on the die are aligned with corresponding circuit traces on the substrate, and so that the surfaces of the die and substrate are coplanar. A film (40) is vacuum laminated over the substrate and the die with heat and pressure. The film is then heated so that it flows to fill the spaces (34) between the die and sidewalls of the cavity, and is then cured. Excess film is then removed everywhere except that which is in the space between the die and the cavity walls. Electrical interconnections (100) are then plated up between the terminations and the circuit traces to bridge the distance between the terminations and the circuit traces. These interconnections are plated directly on the surface of those portions of the laminated film that lie between the sides of the die and of the cavity.
摘要翻译：将集成电路管芯（30）的电气端子（12）与电路承载衬底（20）的对应电路迹线（22）互连的方法。将模具放置在基板中的空腔（24）中，使得管芯上的电端子与基板上的相应电路迹线对准，并且使得管芯和基板的表面是共面的。将薄膜（40）在热和压力下真空层压在基板和模具上。然后将膜加热，使其流动以填充模具和空腔的侧壁之间的空间（34），然后固化。然后除了在模具和腔壁之间的空间中除去多余的膜。然后将电互连（100）电镀在终端和电路迹线之间，以桥接终端和电路迹线之间的距离。这些互连件直接镀在位于模具的侧面和空腔之间的层压膜的那些部分的表面上。

7. 发明授权

US6020261A Process for forming high aspect ratio circuit features 有权
标题翻译：用于形成高纵横比电路特征的方法
公开(公告)号：US6020261A
公开(公告)日：2000-02-01
申请号：US323256
申请日：1999-06-01
申请人： Douglas H. Weisman
发明人： Douglas H. Weisman
IPC分类号： H01L21/3213 , H01L21/48 , H01L21/768 , H05K3/00 , H05K3/10 , B44C1/22
CPC分类号： H01L21/4846 , H01L21/76885 , H05K3/108 , H01L21/32139 , H05K2203/0554 , H05K3/0041
摘要： A method of forming high resolution circuit features on a substrate. A `seed` layer of copper (110) is deposited on a dielectric substrate (100). A dielectric layer (120) is then deposited on the copper layer, and an aluminum `mask` layer (130) is deposited on the dielectric layer. A photoresist layer (140) is spun on or laminated to the aluminum. The photoresist layer is imaged and developed to define a circuit pattern such that portions (230) of the aluminum `mask` layer are revealed, and these revealed portions are further etched so as to reveal portions (320) of the dielectric layer that are directly underneath. The remaining portions of the photoresist layer are stripped away, along with the revealed underlying portions of the dielectric film, exposing portions (410) of the copper layer in the image of the circuit pattern. The remaining portions of the aluminum mask are then removed, and the exposed copper is then electroplated to form the desired circuit traces (600). The remaining portions of the dielectric layer are stripped to expose the unplated portions of the copper layer, and these unplated portions are etched away with acid.
摘要翻译：一种在衬底上形成高分辨率电路特征的方法。铜（110）的“晶种”层沉积在电介质基片（100）上。然后在铜层上沉积电介质层（120），并在电介质层上沉积铝掩模层（130）。光致抗蚀剂层（140）在铝上旋转或层压在铝上。光致抗蚀剂层被成像和显影以限定电路图案，使得铝掩模层的部分（230）被露出，并且这些透露部分被进一步蚀刻以便露出直接地介电层的部分（320）下。光致抗蚀剂层的剩余部分与电介质膜的透明下层部分一起被剥离，在电路图案的图像中暴露铜层的部分（410）。然后去除铝掩模的剩余部分，然后电镀暴露的铜以形成所需的电路迹线（600）。剥离电介质层的剩余部分以露出铜层的未镀层部分，并且用酸蚀刻掉这些未镀层的部分。

8. 发明授权

US5471010A Spatially separated uninsulated twisted wire pair 失效
标题翻译：空间分离的非绝缘双绞线对
公开(公告)号：US5471010A
公开(公告)日：1995-11-28
申请号：US330877
申请日：1994-10-28
申请人： David E. Bockelman , Douglas H. Weisman
发明人： David E. Bockelman , Douglas H. Weisman
IPC分类号： H04B3/32 , H05K1/02 , H05K3/36 , H01B11/06
CPC分类号： H01L24/48 , H01L24/49 , H04B3/32 , H01L2223/6611 , H01L2224/05553 , H01L2224/05554 , H01L2224/05647 , H01L2224/4809 , H01L2224/48091 , H01L2224/48092 , H01L2224/48137 , H01L2224/48472 , H01L2224/49052 , H01L2224/49096 , H01L2224/4917 , H01L2224/49175 , H01L2924/00014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , H01L2924/30111 , H05K1/0216 , H05K3/36
摘要： A radio frequency electrical connection (600) between a pair of electrical devices is formed by a pair of uninsulated bond wires (601, 603). The uninsulated bond wires (601, 603) are twisted in a manner such that the wires form a twisted pair but do not physically touch each other over the length of the twisted section.
摘要翻译：一对电气设备之间的射频电连接（600）由一对未绝缘的接合线（601,603）形成。非绝缘接合线（601,603）以使得线形成双绞线但在扭绞部分的长度上不物理接触的方式被扭转。

9. 发明授权

US5397862A Horizontally twisted-pair planar conductor line structure 失效
标题翻译：水平双绞线平面导线结构
公开(公告)号：US5397862A
公开(公告)日：1995-03-14
申请号：US115175
申请日：1993-08-31
申请人： David E. Bockelman , Douglas H. Weisman
发明人： David E. Bockelman , Douglas H. Weisman
IPC分类号： H05K1/11 , H01L23/498 , H01L23/538 , H04B3/32 , H05K1/02 , H05K9/00 , H05K1/00
CPC分类号： H05K9/0039 , H01L23/49838 , H01L23/5386 , H04B3/32 , H05K1/0228 , H01L2223/6638 , H01L2924/0002 , H01L2924/3011 , H05K1/0245 , H05K2201/097 , H05K2201/10689
摘要： A twisted-pair conductor line structure is formed on a substrate (22) having insulated conductive layers (10, 11). The conductive layers are used to form first, second, third, and fourth conductive planar segments (16). A first conductive link (17) joins the first and second planar conductive segments to provide a first signal path. Similarly, a second conductive link (17) joins the third and fourth planar conductive segments to provide a second signal path. The first and second conductive links are operatively arranged to form a twist (17)in the first and second signal paths, such that the resulting magnetic fields (57, 59) around the twisted conductive segments will be opposite to each other for cancelling each other out, in order to reduce the magnetic field radiation to the surrounding environment.
摘要翻译：在具有绝缘导电层（10,11）的基板（22）上形成双绞导体线结构。导电层用于形成第一，第二，第三和第四导电平面段（16）。第一导电连接（17）连接第一和第二平面导电段以提供第一信号路径。类似地，第二导电连接（17）连接第三和第四平面导电段以提供第二信号路径。第一和第二导电连接件被可操作地布置成在第一和第二信号路径中形成扭转（17），使得围绕扭转的导电段的所得到的磁场（57,59）将彼此相对以抵消彼此出来，以减少对周围环境的磁场辐射。

10. 发明申请

US20080012662A1 METHOD AND APPARATUS FOR A COMMUNICATIONS FILTER 有权
标题翻译：通信过滤器的方法和装置
公开(公告)号：US20080012662A1
公开(公告)日：2008-01-17
申请号：US11457238
申请日：2006-07-13
申请人： Gilberto J. Hernandez , Edgar H. Callaway , Douglas H. Weisman
发明人： Gilberto J. Hernandez , Edgar H. Callaway , Douglas H. Weisman
IPC分类号： H01P1/203
CPC分类号： H01P1/203
摘要： A method and apparatus for a highpass filter structure using transmission line construction which has multiple output tabs for selection of corner frequencies utilizing a plurality of resonators coupled to the transmission line. The transmission line has a characteristic impedance which increases exponentially with respect to a distance from the input.
摘要翻译：一种使用传输线结构的高通滤波器结构的方法和装置，其具有多个输出接头，用于利用耦合到传输线的多个谐振器来选择拐角频率。传输线具有相对于距离输入的距离指数地增加的特性阻抗。

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