专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06878959B2 Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice 失效
标题翻译： III-V族半导体器件包括通过V族子晶格上的原子的空间选择性混合制成的半导体材料
公开(公告)号：US06878959B2
公开(公告)日：2005-04-12
申请号：US10303044
申请日：2002-11-22
申请人： David P. Bour , Ying-Lan Chang , Tetsuya Takeuchi , Danny E. Mars
发明人： David P. Bour , Ying-Lan Chang , Tetsuya Takeuchi , Danny E. Mars
IPC分类号： H01L21/20 , H01L29/20 , H01L29/205 , H01S5/223 , H01S5/343 , H01L29/06
CPC分类号： H01L29/205 , H01L29/2003
摘要： The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.
摘要翻译： III-V族半导体器件包括量子阱层，夹着量子阱层的阻挡层和通过在量子阱的第一半导体材料之间的第V族子晶格上的原子空间选择性混合而形成的第三半导体材料的区域层和阻挡层的第二半导体材料。量子阱层是具有带隙能量和折射率的第一半导体材料的层。阻挡层是具有比第一半导体材料更高的带隙能量和较低折射率的第二半导体材料的层。第三半导体材料分别具有第一半导体材料和第二半导体材料的带隙能量和介于带隙能量和折射率之间的折射率。

2. 发明授权

US07123638B2 Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant 有权
标题翻译：包含N型层和N型掺杂剂的隧道结结构
公开(公告)号：US07123638B2
公开(公告)日：2006-10-17
申请号：US10688600
申请日：2003-10-17
申请人： Michael Howard Leary , Danny E. Mars , Sungwon David Roh , Danielle R. Chamberlin , Ying-Lan Chang
发明人： Michael Howard Leary , Danny E. Mars , Sungwon David Roh , Danielle R. Chamberlin , Ying-Lan Chang
IPC分类号： H01S3/04 , H01L29/24 , H01L31/0336
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3095 , H01S5/343
摘要： A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.
摘要翻译：隧道结结构包括第一半导体材料的n型隧道结层，第二半导体材料的p型隧道结层和隧道结层之间的隧道结。第一半导体材料包括镓（Ga），氮（N），砷（As），并掺杂有Ⅵ族掺杂剂。通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。掺杂第一半导体材料n型与第Ⅵ族掺杂剂使第一半导体材料中的掺杂浓度最大化，从而进一步提高隧道的可能性。

3. 发明授权

US06853663B2 Efficiency GaN-based light emitting devices 有权
标题翻译：效率GaN基发光器件
公开(公告)号：US06853663B2
公开(公告)日：2005-02-08
申请号：US10026232
申请日：2001-12-21
申请人： Ghulam Hasnain , Richard P. Schneider , Scott W. Corzine , Mark Hueschen , Tetsuya Takeuchi , Danny E. Mars
发明人： Ghulam Hasnain , Richard P. Schneider , Scott W. Corzine , Mark Hueschen , Tetsuya Takeuchi , Danny E. Mars
IPC分类号： H01S5/10 , H01S5/323 , H01S5/40 , H01S5/00
CPC分类号： H01S5/10 , H01S5/32341 , H01S5/4037 , H01S2301/14
摘要： An optical semiconductor device having an active layer for generating light via the recombination of holes and electrons therein. The active layer is part of a plurality of semiconductor layers including an n-p junction between an n-type layer and a p-type layer. The active layer has a polarization field therein having a field direction that depends on the orientation of the active layer when the active layer is grown. In the present invention, the polarization field in the active layer has an orientation such that the polarization field is directed from the n-layer to the p-layer.
摘要翻译：一种光半导体器件，具有通过其中的空穴和电子的复合产生光的有源层。活性层是包括n型层和p型层之间的n-p结的多个半导体层的一部分。有源层具有其中当活性层生长时具有取决于有源层的取向的场方向的偏振场。在本发明中，有源层中的偏振场具有使得极化场从n层指向p层的取向。

4. 发明授权

US5376229A Method of fabrication of adjacent coplanar semiconductor devices 失效
标题翻译：相邻共面半导体器件的制造方法
公开(公告)号：US5376229A
公开(公告)日：1994-12-27
申请号：US131835
申请日：1993-10-05
申请人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
发明人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
IPC分类号： H01L21/033 , H01L21/20 , H01L21/306 , B44C1/22
CPC分类号： H01L21/0331 , H01L21/02395 , H01L21/02546
摘要： A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.
摘要翻译：一种用于处理提供的不同类型的共面半导体器件的方法。该方法包括以下步骤：形成用于在衬底上形成第一器件区域的第一层，在第一器件区域上形成外延半导体剥离层，去除第一器件区域的一部分以打开形成区域的第二器件区域，外延地沉积第二器件区域，以及去除剥离层以使剩余在衬底上的第一和第二器件区域。

5. 发明授权

US06756018B2 Method and apparatus for selective execution of microfluidic circuits utilizing electrically addressable gas generators 失效
标题翻译：用于选择性地执行利用电可寻址气体发生器的微流体回路的方法和装置
公开(公告)号：US06756018B2
公开(公告)日：2004-06-29
申请号：US09782544
申请日：2001-02-12
申请人： Ken A. Nishimura , Danny E. Mars
发明人： Ken A. Nishimura , Danny E. Mars
IPC分类号： B01L302
CPC分类号： B01L3/50273 , B01J19/0093 , B01J2219/00873 , B01J2219/00891 , B01L2300/0816 , B01L2400/0442 , B01L2400/046 , F15C1/14 , Y10T436/25 , Y10T436/2575 , Y10T436/25875
摘要： A microfluidic system for steering subject materials to a next processing region includes a substrate having at least one embedded gas generator that is activated in response to the result of an initial process, whereby a gas is formed having pressure to steer the subject materials to the next processing region. The gas generator includes resistors that are electrically activated. As current passes through the resistors, thermal energy is released to decompose a selected material from a solid or liquid state to gaseous state. In an alternative embodiment, a gas generator is activated in response to an external control.
摘要翻译：用于将主体材料转向下一个处理区域的微流体系统包括具有至少一个嵌入式气体发生器的基板，其响应于初始过程的结果被激活，由此形成气体以将主体材料转向下一个处理区域。气体发生器包括电活动的电阻器。当电流通过电阻器时，释放热能将所选择的材料从固态或液态分解成气态。在替代实施例中，气体发生器响应于外部控制被激活。

6. 发明申请

US20120025169A1 NANOSTRUCTURE ARRAY TRANSISTOR 审中-公开
标题翻译：纳米结构阵列晶体管
公开(公告)号：US20120025169A1
公开(公告)日：2012-02-02
申请号：US12848722
申请日：2010-08-02
申请人： Danny E. Mars , James C. Kim , Sungsoo Yi
发明人： Danny E. Mars , James C. Kim , Sungsoo Yi
IPC分类号： H01L29/775 , H01L21/336 , H01L29/737
CPC分类号： H01L29/732 , B82Y10/00 , H01L29/0676 , H01L29/068 , H01L29/2003 , H01L29/6631 , H01L29/66318 , H01L29/66462 , H01L29/66469 , H01L29/66856 , H01L29/7371 , H01L29/775 , H01L29/7788 , H01L29/7789 , H01L29/8122
摘要： Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that may be formed with different materials and/or doping to achieve desired effects. Collectively, the lower segments may form the source or drain, with the middle segments collectively forming the channel. Alternatively, the lower segments could collectively form the emitter or collector, with the middle segments collectively forming the base. Transistor electrodes may be planar metal structures that surround sidewalls of the nanostructures. The transistors may be Field Effect Transistors (FETs) or bipolar junction transistors (BJTs). Heterojunction bipolar junction transistors (HBTs) and high electron mobility transistors (HEMTs) are possible.
摘要翻译：本文公开了用于从纳米结构体组形成晶体管的晶体管和方法。晶体管可以由在衬底上垂直生长的纳米结构阵列形成。纳米结构可以具有可以用不同材料和/或掺杂形成以获得期望效果的下部，中部和上部部分。总的来说，下段可形成源或漏，中间段共同形成通道。或者，下段可以共同形成发射器或集电器，中间段共同形成基座。晶体管电极可以是围绕纳米结构侧壁的平面金属结构。晶体管可以是场效应晶体管（FET）或双极结型晶体管（BJT）。异质结双极结晶体管（HBT）和高电子迁移率晶体管（HEMT）是可能的。

7. 发明申请

US20110297913A1 NANOSTRUCTURE OPTOELECTRONIC DEVICE HAVING SIDEWALL ELECTRICAL CONTACT 有权
标题翻译：具有电子电气接触的纳米结构光电器件
公开(公告)号：US20110297913A1
公开(公告)日：2011-12-08
申请号：US12796569
申请日：2010-06-08
申请人： James C. Kim , Sungsoo Yi , Danny E. Mars
发明人： James C. Kim , Sungsoo Yi , Danny E. Mars
IPC分类号： H01L31/0352 , H01L31/18 , H01L33/04 , H01L21/30
CPC分类号： H01L33/18 , B82Y10/00 , H01L25/0756 , H01L33/08 , H01L33/24 , H01L33/38 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.
摘要翻译：公开了纳米结构阵列光电器件。光电子器件可以具有物理和电连接到纳米结构阵列（例如，纳米柱）的侧壁的顶部电接触。顶部电接触可以被定位成使得光可以进入或离开纳米结构而不通过顶部电接触。因此，顶部电接触可以对具有由纳米结构中的活性区域吸收或产生的波长的光是不透明的。顶部电接触可以由高导电性的材料制成，因为不需要在光学透明度和电导率之间进行折衷。该装置可以是太阳能电池，LED，光电检测器等

8. 发明授权

US5805624A Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate 失效
标题翻译：长波长红外垂直腔表面发射激光器在砷化镓衬底上
公开(公告)号：US5805624A
公开(公告)日：1998-09-08
申请号：US688338
申请日：1996-07-30
申请人： Long Yang , Danny E. Mars
发明人： Long Yang , Danny E. Mars
IPC分类号： H01S5/00 , H01S5/183 , H01S5/323 , H01S5/343 , H01S3/19 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/18308 , H01S2302/00 , H01S5/2063 , H01S5/3095 , H01S5/32366 , H01S5/34306
摘要： A vertical cavity surface emitting laser (VCSEL) that generates light having a desired wavelength, greater than one micron. The laser comprises a substrate, a lower mirror region, an active region and an upper mirror region. The substrate consists essentially of GaAs. The lower mirror region is adjacent the substrate and is lattice matched to the substrate. The active region is sandwiched between the upper and lower mirror regions, and includes a central quantum well region and a gallium arsenide layer sandwiched between the quantum well region and each of the lower mirror region and the upper mirror region. The central quantum well region includes a quantum well layer consisting essentially of GaN.sub.x As.sub.(1-x). The GaN.sub.x As.sub.(1-x) of the quantum well layer has a lattice constant and a band gap dependent on x. The value of x sets the bandgap of the GaN.sub.x As.sub.(1-x) of the quantum well layer to a value corresponding to light generation at the desired wavelength, greater than one micron. Each gallium arsenide layer is a layer of a material consisting essentially of GaAs or AlGaAs, and is lattice matched to the substrate. The quantum well layer may additionally include a fraction of indium to lattice match the quantum well layer to the substrate.
摘要翻译：垂直腔表面发射激光器（VCSEL），其产生具有大于1微米的期望波长的光。激光器包括基板，下反射镜区域，有源区域和上反射镜区域。衬底基本上由GaAs组成。下反射镜区域与衬底相邻并且与衬底晶格匹配。有源区域夹在上镜面区域和下镜面区域之间，并且包括夹在量子阱区域和下反射镜区域和上镜面区域中的每一个的中心量子阱区域和砷化镓层。中心量子阱区包括基本上由GaN xAs（1-x）组成的量子阱层。量子阱层的GaN xAs（1-x）具有晶格常数和取决于x的带隙。 x的值将量子阱层的GaN xAs（1-x）的带隙设置为对应于大于1微米的期望波长的光产生的值。每个砷化镓层是基本上由GaAs或AlGaAs组成的材料层，并且与衬底晶格匹配。量子阱层可以另外包括铟的一部分以将量子阱层与衬底进行晶格匹配。

9. 发明申请

US20110299074A1 NANOSTRUCTURE OPTOELECTRONIC DEVICE WITH INDEPENDENTLY CONTROLLABLE JUNCTIONS 有权
标题翻译：具有独立可控制功能的纳米结构光电器件
公开(公告)号：US20110299074A1
公开(公告)日：2011-12-08
申请号：US12796600
申请日：2010-06-08
申请人： James C. Kim , Sungsoo Yi , Danny E. Mars
发明人： James C. Kim , Sungsoo Yi , Danny E. Mars
IPC分类号： G01J3/28 , H01L27/144 , H05B37/02 , H01L31/0352 , H01L33/04 , H01L27/146 , H01L21/28
CPC分类号： H01L27/144 , B82Y10/00 , B82Y20/00 , G09G3/32 , H01L25/0756 , H01L27/146 , H01L27/15 , H01L29/0665 , H01L31/035281 , H01L31/0687 , H01L31/0725 , H01L31/101 , H01L31/184 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/48091 , H01L2933/0016 , H05B33/0842 , Y02E10/544 , Y10S977/95 , Y10S977/954 , H01L2924/00014
摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.
摘要翻译：公开了纳米结构阵列光电器件。光电子器件可以具有物理和电连接到纳米结构阵列的侧壁的一个或多个中间电触点。触点可以允许独立地控制光电子器件的不同光电活性区域。例如，可以使用相同组的一个或多个纳米结构独立地发射或检测一个颜色的光。光电子器件可以是可用作LED显示器或成像传感器的像素化器件。像素化器件可以具有在不同层处具有交替的行和列的侧壁电触点的纳米结构的阵列。可以在行触点和列触点的交叉处形成像素。作为一个示例，一组一个或多个纳米结构具有蓝色子像素，绿色子像素和红色子像素。

10. 发明授权

US08659037B2 Nanostructure optoelectronic device with independently controllable junctions 有权
标题翻译：纳米结构光电子器件具有独立可控的结
公开(公告)号：US08659037B2
公开(公告)日：2014-02-25
申请号：US12796600
申请日：2010-06-08
申请人： James C. Kim , Sungsoo Yi , Danny E. Mars
发明人： James C. Kim , Sungsoo Yi , Danny E. Mars
IPC分类号： H01L29/08
CPC分类号： H01L27/144 , B82Y10/00 , B82Y20/00 , G09G3/32 , H01L25/0756 , H01L27/146 , H01L27/15 , H01L29/0665 , H01L31/035281 , H01L31/0687 , H01L31/0725 , H01L31/101 , H01L31/184 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/48091 , H01L2933/0016 , H05B33/0842 , Y02E10/544 , Y10S977/95 , Y10S977/954 , H01L2924/00014
摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.
摘要翻译：公开了纳米结构阵列光电器件。光电子器件可以具有物理和电连接到纳米结构阵列的侧壁的一个或多个中间电触点。触点可以允许独立地控制光电子器件的不同光电活性区域。例如，可以使用相同组的一个或多个纳米结构独立地发射或检测一个颜色的光。光电子器件可以是可用作LED显示器或成像传感器的像素化器件。像素化器件可以具有在不同层处具有交替的行和列的侧壁电触点的纳米结构的阵列。可以在行触点和列触点的交叉处形成像素。作为一个示例，一组一个或多个纳米结构具有蓝色子像素，绿色子像素和红色子像素。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式