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1. 发明申请

US20100047957A1 METHOD FOR FORMING SOLAR CELL HAVING ACTIVE REGION WITH NANOSTRUCTURES HAVING ENERGY WELLS 审中-公开
标题翻译：用具有能量孔的纳米结构形成具有活性区域的太阳能电池的方法
公开(公告)号：US20100047957A1
公开(公告)日：2010-02-25
申请号：US12611483
申请日：2009-11-03
申请人： James C. Kim , Sungsoo Yi
发明人： James C. Kim , Sungsoo Yi
IPC分类号： H01L31/18
CPC分类号： H01L31/0352 , B82Y20/00 , H01L31/03046 , H01L31/035236 , H01L31/0384 , H01L31/043 , H01L31/0725 , H01L31/0735 , H01L2924/0002 , Y02E10/544 , H01L2924/00
摘要： A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
摘要翻译：提供了一种具有分级能量阱的太阳能电池的方法和装置。太阳能电池的有源区包括纳米结构。纳米结构由包含III-V族化合物半导体的材料和改变III-V族化合物半导体的带隙的元素形成。例如，III-V族化合物半导体可以是氮化镓（GaN）。作为示例，“带隙改变元件”可以是铟（In）。活性区域中的铟的浓度是不均匀的，使得活性区域具有被屏障隔开的许多能量阱。能量井可以“分级”，这意味着能量阱具有彼此不同的带隙，通常从一个孔单调增加或减小。

2. 发明授权

US07629532B2 Solar cell having active region with nanostructures having energy wells 有权
标题翻译：具有具有能量阱的具有纳米结构的活性区域的太阳能电池
公开(公告)号：US07629532B2
公开(公告)日：2009-12-08
申请号：US11648059
申请日：2006-12-29
申请人： James C. Kim , Sungsoo Yi
发明人： James C. Kim , Sungsoo Yi
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/0352 , B82Y20/00 , H01L31/03046 , H01L31/035236 , H01L31/0384 , H01L31/043 , H01L31/0725 , H01L31/0735 , H01L2924/0002 , Y02E10/544 , H01L2924/00
摘要： A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
摘要翻译：提供了一种具有分级能量阱的太阳能电池的方法和装置。太阳能电池的有源区包括纳米结构。纳米结构由包含III-V族化合物半导体的材料和改变III-V族化合物半导体的带隙的元素形成。例如，III-V族化合物半导体可以是氮化镓（GaN）。作为示例，“带隙改变元件”可以是铟（In）。活性区域中的铟的浓度是不均匀的，使得活性区域具有被屏障隔开的许多能量阱。能量井可以“分级”，这意味着能量阱具有彼此不同的带隙，通常从一个孔单调增加或减小。

3. 发明授权

US07535031B2 Semiconductor light emitting device with lateral current injection in the light emitting region 有权
标题翻译：在发光区域具有横向电流注入的半导体发光器件
公开(公告)号：US07535031B2
公开(公告)日：2009-05-19
申请号：US11226184
申请日：2005-09-13
申请人： James C. Kim , Stephen A. Stockman
发明人： James C. Kim , Stephen A. Stockman
IPC分类号： H01L27/15
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/24 , H01S5/0424
摘要： A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.
摘要翻译：半导体发光器件包括有源区，n型区和包括延伸到有源区的部分的p型区。有源区可以包括由势垒层分隔开的多个量子阱，并且p型延伸部穿透至少一个量子阱层。通过向各个量子阱提供直流电流路径，p型区域延伸到有源区域中的扩展可以提供对有源区域的各个量子阱中的载流子的均匀填充。这种均匀填充可以通过降低最接近体p型区域的量子阱中的载流子密度来提高高电流密度下的操作效率，从而减少对非辐射复合物损失的载流子数量。

4. 发明申请

US20080149946A1 Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light 审中-公开
标题翻译：半导体发光器件配置为发射多个波长的光
公开(公告)号：US20080149946A1
公开(公告)日：2008-06-26
申请号：US11615601
申请日：2006-12-22
申请人： James C. Kim , Sungsoo Yi
发明人： James C. Kim , Sungsoo Yi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, a III-nitride structure includes a plurality of posts of semiconductor material corresponding to openings in a mask layer. Each post includes a light emitting layer. Each light emitting layer is disposed between an n-type region and a p-type region. A first light emitting layer disposed in a first post is configured to emit light at a different wavelength than a second light emitting layer disposed in a second post. In some embodiments, the wavelength emitted by each light emitting layer is controlled by controlling the diameter of the posts, such that a device that emits white light without phosphor conversion may be formed.
摘要翻译：根据本发明的实施例，III族氮化物结构包括对应于掩模层中的开口的多个半导体材料柱。每个柱包括发光层。每个发光层设置在n型区域和p型区域之间。布置在第一柱中的第一发光层被配置为发射与布置在第二柱中的第二发光层不同的波长的光。在一些实施例中，通过控制柱的直径来控制由每个发光层发射的波长，使得可以形成发射没有磷光体转换的白光的装置。

5. 发明授权

US08026117B2 Semiconductor light emitting device with lateral current injection in the light emitting region 有权
标题翻译：在发光区域具有横向电流注入的半导体发光器件
公开(公告)号：US08026117B2
公开(公告)日：2011-09-27
申请号：US12421048
申请日：2009-04-09
申请人： James C. Kim , Stephen A. Stockman
发明人： James C. Kim , Stephen A. Stockman
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/24 , H01S5/0424
摘要： A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.
摘要翻译：半导体发光器件包括有源区，n型区和包括延伸到有源区的部分的p型区。有源区可以包括由势垒层分隔开的多个量子阱，并且p型延伸部穿透至少一个量子阱层。通过向各个量子阱提供直流电流路径，p型区域延伸到有源区域中的扩展可以提供对有源区域的各个量子阱中的载流子的均匀填充。这种均匀填充可以通过降低最接近体p型区域的量子阱中的载流子密度来提高高电流密度下的操作效率，从而减少对非辐射复合物损失的载流子数量。

6. 发明申请

US20080156366A1 Solar cell having active region with nanostructures having energy wells 有权
标题翻译：具有具有能量阱的具有纳米结构的活性区域的太阳能电池
公开(公告)号：US20080156366A1
公开(公告)日：2008-07-03
申请号：US11648059
申请日：2006-12-29
申请人： James C. Kim , Sungsoo Yi
发明人： James C. Kim , Sungsoo Yi
IPC分类号： H01L31/0304 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/0352 , B82Y20/00 , H01L31/03046 , H01L31/035236 , H01L31/0384 , H01L31/043 , H01L31/0725 , H01L31/0735 , H01L2924/0002 , Y02E10/544 , H01L2924/00
摘要： A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.
摘要翻译：提供了一种具有分级能量阱的太阳能电池的方法和装置。太阳能电池的有源区包括纳米结构。纳米结构由包含III-V族化合物半导体的材料和改变III-V族化合物半导体的带隙的元素形成。例如，III-V族化合物半导体可以是氮化镓（GaN）。作为示例，“带隙改变元件”可以是铟（In）。活性区域中的铟的浓度是不均匀的，使得活性区域具有被屏障隔开的许多能量阱。能量井可以“分级”，这意味着能量阱具有彼此不同的带隙，通常从一个孔单调增加或减小。

7. 发明授权

US5525539A Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength 失效
标题翻译：用于形成发光二极管的方法，所述发光二极管用作有效的发射体或在共同波长的光的检测器
公开(公告)号：US5525539A
公开(公告)日：1996-06-11
申请号：US412697
申请日：1995-03-29
申请人： James C. Kim
发明人： James C. Kim
IPC分类号： H01L31/103 , H01L31/12 , H01L33/00 , H01L33/30 , H01L21/208
CPC分类号： H01L33/30 , H01L31/1035 , H01L31/125 , H01L33/0008 , Y10S438/936
摘要： An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga.sub.1-x Al.sub.x As semiconductor material with two semiconductive regions that form a p-n junction. The value of x (the amount of aluminum in the semiconductive material Ga.sub.1-x Al.sub.x As) is varied monotonically as the material is grown so that x decreases monotonically from a value greater than approximately 0.08 at the diode surface on the N side of the p-n junction to a value not less than zero at the diode surface on the P side of the junction. The value of x at the p-n junction is greater than 0 and less than approximately 0.08 as a result of a high initial growth temperature of at least about 930 degrees Celsius. A wavelength matched emitter and detector system is realized by adjusting the present diode's initial growth temperature so that its detector response curve substantially overlaps the emission curve of a second diode.
摘要翻译：红外LED可以有效地作为发射器和检测器在普通波长下起作用，而不会在雪崩二极管中发现不需要的特性。 LED包括具有形成p-n结的两个半导体区域的渐变带隙Ga 1-x Al x As半导体材料。当材料生长时，x的值（半导体材料Ga1-xAlxAs中的铝的量）单调变化，使得x在pn结的N侧的二极管表面上从大于0.08的值单调减小到在结的P侧的二极管表面处的值不小于零。由于初始生长温度高至少约930摄氏度，p-n结上的x值大于0且小于约0.08。波长匹配的发射器和检测器系统通过调节当前二极管的初始生长温度来实现，使其检测器响应曲线基本上与第二个二极管的发射曲线重叠。

8. 发明授权

US5448082A Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same 失效
标题翻译：发光二极管，用作有效的发射体或普通波长的光检测器及其形成方法
公开(公告)号：US5448082A
公开(公告)日：1995-09-05
申请号：US312829
申请日：1994-09-27
申请人： James C. Kim
发明人： James C. Kim
IPC分类号： H01L31/103 , H01L31/12 , H01L33/00 , H01L33/30
CPC分类号： H01L33/30 , H01L31/1035 , H01L31/125 , H01L33/0008 , Y10S438/936
摘要： An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga.sub.1-x Al.sub.x As semiconductor material with two semiconductive regions that form a p-n junction. The value of x (the amount of aluminum in the semiconductive material Ga.sub.1-x Al.sub.x As) is varied monotonically as the material is grown so that x decreases monotonically from a value greater than 0.08 at the diode surface on the N side of the p-n junction to a value not less than zero at the diode surface on the P side of the junction. The value of x at the p-n junction is greater than 0 and less than 0.08 as a result of a high initial growth temperature of at least about 930 degrees Celsius. A wavelength matched emitter and detector system is realized by adjusting the present diode's initial growth temperature so that its detector response curve substantially overlaps the emission curve of a second diode.
摘要翻译：红外LED可以有效地作为发射器和检测器在普通波长下起作用，而不会在雪崩二极管中发现不需要的特性。 LED包括具有形成p-n结的两个半导体区域的渐变带隙Ga 1-x Al x As半导体材料。随着材料生长，x的值（半导体材料Ga1-xAlxAs中的铝的量）单调变化，使得x在pn结的N侧的二极管表面上的值大于0.08的单调减小到在接头的P侧的二极管表面处的值不小于零。由于初始生长温度高至少约930摄氏度，p-n结上的x值大于0且小于0.08。波长匹配的发射器和检测器系统通过调节当前二极管的初始生长温度来实现，使其检测器响应曲线基本上与第二个二极管的发射曲线重叠。

9. 发明授权

US3983395A MIS structures for background rejection in infrared imaging devices 失效
标题翻译：红外成像设备背景抑制的MIS结构
公开(公告)号：US3983395A
公开(公告)日：1976-09-28
申请号：US528582
申请日：1974-11-29
申请人： James C. Kim
发明人： James C. Kim
IPC分类号： H01L27/148 , G01T1/22 , H01L27/14
CPC分类号： H01L27/14875
摘要： An infrared imager having (1) sensing sites comprised of three MIS capacitors, one being an optically sensitive receiver capacitor, a second being an optically insensitive transfer capacitor, and a third being an optically insensitive storage capacitor; and (2) storage control circuit for cycling said sensing sites through a plurality of storage cycles, each cycle comprised of transferring a signal charge from said receiver capacitor to the storage capacitor, prior to readout of the stored signal charge, which is substantially free of background charge, from said optically insensitive storage capacitor using either charge-injection device (CID) or charge-coupled device (CCD) techniques.
摘要翻译：一种红外成像器，其具有（1）由三个MIS电容器组成的感测位置，一个是光敏接收电容器，另一个是光敏传输电容器，第三个是光敏不敏感存储电容器; 以及（2）用于通过多个存储周期循环所述感测位置的存储控制电路，每个周期包括在读出所存储的信号电荷之前将所述接收电容器的信号电荷传送到所述存储电容器，所述存储信号电荷基本上不含使用电荷注入器件（CID）或电荷耦合器件（CCD）技术从所述光学不敏感存储电容器中获得背景电荷。

10. 发明授权

US08659037B2 Nanostructure optoelectronic device with independently controllable junctions 有权
标题翻译：纳米结构光电子器件具有独立可控的结
公开(公告)号：US08659037B2
公开(公告)日：2014-02-25
申请号：US12796600
申请日：2010-06-08
申请人： James C. Kim , Sungsoo Yi , Danny E. Mars
发明人： James C. Kim , Sungsoo Yi , Danny E. Mars
IPC分类号： H01L29/08
CPC分类号： H01L27/144 , B82Y10/00 , B82Y20/00 , G09G3/32 , H01L25/0756 , H01L27/146 , H01L27/15 , H01L29/0665 , H01L31/035281 , H01L31/0687 , H01L31/0725 , H01L31/101 , H01L31/184 , H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/48091 , H01L2933/0016 , H05B33/0842 , Y02E10/544 , Y10S977/95 , Y10S977/954 , H01L2924/00014
摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.
摘要翻译：公开了纳米结构阵列光电器件。光电子器件可以具有物理和电连接到纳米结构阵列的侧壁的一个或多个中间电触点。触点可以允许独立地控制光电子器件的不同光电活性区域。例如，可以使用相同组的一个或多个纳米结构独立地发射或检测一个颜色的光。光电子器件可以是可用作LED显示器或成像传感器的像素化器件。像素化器件可以具有在不同层处具有交替的行和列的侧壁电触点的纳米结构的阵列。可以在行触点和列触点的交叉处形成像素。作为一个示例，一组一个或多个纳米结构具有蓝色子像素，绿色子像素和红色子像素。

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