专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06955933B2 Light emitting diodes with graded composition active regions 失效
标题翻译：具有分级组成活性区的发光二极管
公开(公告)号：US06955933B2
公开(公告)日：2005-10-18
申请号：US09912589
申请日：2001-07-24
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译：根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。有源区包括作为量子阱层或阻挡层的第二半导体层。第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

2. 发明授权

US07345324B2 Light emitting diodes with graded composition active regions 失效
标题翻译：具有分级组成活性区的发光二极管
公开(公告)号：US07345324B2
公开(公告)日：2008-03-18
申请号：US11177670
申请日：2005-07-07
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译：根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。有源区包括作为量子阱层或阻挡层的第二半导体层。第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

3. 发明授权

US06943381B2 III-nitride light-emitting devices with improved high-current efficiency 有权
标题翻译：具有改善的高电流效率的III族氮化物发光器件
公开(公告)号：US06943381B2
公开(公告)日：2005-09-13
申请号：US10769590
申请日：2004-01-30
申请人： Nathan F. Gardner , Christopher P. Kocot , Stephen A. Stockman
发明人： Nathan F. Gardner , Christopher P. Kocot , Stephen A. Stockman
IPC分类号： H01L33/00 , H01L33/32
CPC分类号： H01L33/32
摘要： A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.
摘要翻译：发光半导体器件包括在有源区附近形成的III-氮化物有源区和III-氮化物层，其厚度超过III-氮化物层中的应变松弛的临界厚度。例如，III-氮化物层可以是载流子限制层。在本发明的另一方面中，一种发光半导体器件包括III族氮化物发光层，In-Al 2 O 3，Ga 1-xy， SUB> N（0 <= x <= 1,0,0 <= y <= 1，x + y <= 1），以及插入发光层和In < 1＆lt; 1＆gt; Ga 1-xy N层。间隔层可以有利地将In和/或Al 2 Y 1 Ga 1-x-y N N层及其中的任何污染物与发光层隔开。可以有利地选择III-氮化物层的组成以确定III-氮化物层中的电场的强度，从而提高器件发光的效率。

4. 发明授权

US06635904B2 Indium gallium nitride smoothing structures for III-nitride devices 有权
公开(公告)号：US06635904B2
公开(公告)日：2003-10-21
申请号：US09823823
申请日：2001-03-29
申请人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
发明人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/06 , H01S5/0212 , H01S5/32341 , H01S5/3409
摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

5. 发明授权

US06489636B1 Indium gallium nitride smoothing structures for III-nitride devices 有权
公开(公告)号：US06489636B1
公开(公告)日：2002-12-03
申请号：US09823732
申请日：2001-03-29
申请人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
发明人： Werner K. Goetz , Michael D. Camras , Nathan F. Gardner , R. Scott Kern , Andrew Y. Kim , Stephen A. Stockman
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/06 , H01S5/0212 , H01S5/32341 , H01S5/3409
摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

6. 发明授权

US07951693B2 III-nitride light emitting devices grown on templates to reduce strain 有权
标题翻译：在模板上生长的III族氮化物发光器件以减少应变
公开(公告)号：US07951693B2
公开(公告)日：2011-05-31
申请号：US11615808
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译：在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。降低发光器件中的应变可以提高器件的性能。模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面如在结构中生长。一层中的应变量为|（ain-plane-abulk）| / abulk。在一些实施方案中，发光层中的应变小于1％。

7. 发明申请

US20080149961A1 III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain 有权
标题翻译： III型氮化物发光器件生长在模板上以减少应变
公开(公告)号：US20080149961A1
公开(公告)日：2008-06-26
申请号：US11615834
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译：在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。降低发光器件中的应变可以提高器件的性能。模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数和体内晶格常数a的体晶格常数a _{对应于在该结构中生长的该层的晶格常数。一层中的应变量是|（一个平面内的）本体体积。在一些实施方案中，发光层中的应变小于1％。}

8. 发明授权

US07547908B2 III-nitride light emitting devices grown on templates to reduce strain 有权
标题翻译：在模板上生长的III族氮化物发光器件以减少应变
公开(公告)号：US07547908B2
公开(公告)日：2009-06-16
申请号：US11615834
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译：在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。降低发光器件中的应变可以提高器件的性能。模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面如在结构中生长。一层中的应变量为|（ain-plane-abulk）| / abulk。在一些实施方案中，发光层中的应变小于1％。

9. 发明授权

US07534638B2 III-nitride light emitting devices grown on templates to reduce strain 有权
公开(公告)号：US07534638B2
公开(公告)日：2009-05-19
申请号：US11615826
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L21/205
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/32
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

10. 发明授权

US07880186B2 III-nitride light emitting device with double heterostructure light emitting region 有权
标题翻译：具有双异质结构发光区域的III族氮化物发光器件
公开(公告)号：US07880186B2
公开(公告)日：2011-02-01
申请号：US11682276
申请日：2007-03-05
申请人： Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
发明人： Nathan F. Gardner , Gangyi Chen , Werner K. Goetz , Michael R. Krames , Gerd O. Mueller , Yu-Chen Shen , Satoshi Watanabe
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm−3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.
摘要翻译：在器件中，III族氮化物发光层设置在n型区域和p型区域之间。设置在n型区域和发光层之间的第一间隔层被掺杂到6×10 18 cm -3和5×10 19 cm -3之间的掺杂剂浓度。设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到小于6×10 18 cm -3的掺杂剂浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式