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1. 发明申请

US20080149961A1 III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain 有权
标题翻译： III型氮化物发光器件生长在模板上以减少应变
公开(公告)号：US20080149961A1
公开(公告)日：2008-06-26
申请号：US11615834
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译：在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。降低发光器件中的应变可以提高器件的性能。模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数和体内晶格常数a的体晶格常数a _{对应于在该结构中生长的该层的晶格常数。一层中的应变量是|（一个平面内的）本体体积。在一些实施方案中，发光层中的应变小于1％。}

2. 发明授权

US07951693B2 III-nitride light emitting devices grown on templates to reduce strain 有权
标题翻译：在模板上生长的III族氮化物发光器件以减少应变
公开(公告)号：US07951693B2
公开(公告)日：2011-05-31
申请号：US11615808
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译：在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。降低发光器件中的应变可以提高器件的性能。模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面如在结构中生长。一层中的应变量为|（ain-plane-abulk）| / abulk。在一些实施方案中，发光层中的应变小于1％。

3. 发明申请

US20080153192A1 III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain 有权
公开(公告)号：US20080153192A1
公开(公告)日：2008-06-26
申请号：US11615808
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

4. 发明申请

US20080153191A1 III-Nitride Light Emitting Devices Grown on Templates to Reduce Strain 有权
公开(公告)号：US20080153191A1
公开(公告)日：2008-06-26
申请号：US11615826
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/32
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

5. 发明授权

US07534638B2 III-nitride light emitting devices grown on templates to reduce strain 有权
公开(公告)号：US07534638B2
公开(公告)日：2009-05-19
申请号：US11615826
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L21/205
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0079 , H01L33/12 , H01L33/16 , H01L33/32
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

6. 发明授权

US07547908B2 III-nitride light emitting devices grown on templates to reduce strain 有权
标题翻译：在模板上生长的III族氮化物发光器件以减少应变
公开(公告)号：US07547908B2
公开(公告)日：2009-06-16
申请号：US11615834
申请日：2006-12-22
申请人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
发明人： Patrick N. Grillot , Nathan F. Gardner , Werner K. Goetz , Linda T. Romano
IPC分类号： H01L29/06
CPC分类号： H01L33/007 , H01L31/184
摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.
摘要翻译：在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。降低发光器件中的应变可以提高器件的性能。模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面如在结构中生长。一层中的应变量为|（ain-plane-abulk）| / abulk。在一些实施方案中，发光层中的应变小于1％。

7. 发明申请

US20090032828A1 III-Nitride Device Grown on Edge-Dislocation Template 审中-公开
标题翻译：边缘位错模板上生长的III型氮化物器件
公开(公告)号：US20090032828A1
公开(公告)日：2009-02-05
申请号：US11833921
申请日：2007-08-03
申请人： Linda T. Romano , Patrick N. Grillot
发明人： Linda T. Romano , Patrick N. Grillot
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/32 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L33/12
摘要： A semiconductor light emitting device includes a wurtzite III-nitride semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A template layer and a dislocation bending layer are grown before the light emitting layer. The template layer is grown such that at least 70% of the dislocations in the template layer are edge dislocations. At least some of the edge dislocations in the template layer continue into the dislocation bending layer. The dislocation bending layer is grown to have a different magnitude of strain than the template layer. The change in strain at the interface between the template layer and the dislocation bending layer causes at least some of the edge dislocations in the template layer to bend to a different orientation in the dislocation bending layer. Semiconductor material grown above the bent edge dislocations may exhibit reduced strain.
摘要翻译：半导体发光器件包括含有设置在n型区域和p型区域之间的发光层的纤锌矿III族氮化物半导体结构。模板层和位错弯曲层在发光层之前生长。生长模板层使得模板层中至少70％的位错是边缘位错。模板层中的至少一些边缘位错继续进入位错弯曲层。使位错弯曲层生长成具有与模板层不同的应变大小。在模板层和位错弯曲层之间的界面处的应变变化导致模板层中的至少一些边缘位错在位错弯曲层中弯曲成不同的取向。在弯曲边缘位错以上生长的半导体材料可能表现出减小的应变。

8. 发明授权

US08679869B2 Contact for a semiconductor light emitting device 有权
标题翻译：接触半导体发光器件
公开(公告)号：US08679869B2
公开(公告)日：2014-03-25
申请号：US13423625
申请日：2012-03-19
申请人： Rafael I. Aldaz , John E. Epler , Patrick N. Grillot , Michael R. Krames
发明人： Rafael I. Aldaz , John E. Epler , Patrick N. Grillot , Michael R. Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to a mount via the contacts. A growth substrate is removed from the semiconductor structure and a thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.
摘要翻译： AlGaInP发光器件形成为薄的倒装芯片器件。该器件包括包括设置在n型区域和p型区域之间的AlGaInP发光层的半导体结构。电连接到n型和p型区的N-和p-触点都形成在半导体结构的同一侧上。半导体结构通过触点连接到安装座。从半导体结构去除生长衬底，并且省略厚的透明衬底，使得器件中的半导体层的总厚度小于15μm，在一些实施例中为一些实施例，小于10μm。半导体结构的顶侧可以是纹理的。

9. 发明申请

US20120187372A1 CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：接触半导体发光器件
公开(公告)号：US20120187372A1
公开(公告)日：2012-07-26
申请号：US13423625
申请日：2012-03-19
申请人： Rafael I. Aldaz , John E. Epler , Patrick N. Grillot , Michael R. Krames
发明人： Rafael I. Aldaz , John E. Epler , Patrick N. Grillot , Michael R. Krames
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm in some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.
摘要翻译： AlGaInP发光器件形成为薄的倒装芯片器件。该器件包括包括设置在n型区域和p型区域之间的AlGaInP发光层的半导体结构。电连接到n型和p型区的N-和p-触点都形成在半导体结构的同一侧上。半导体结构通过触点连接到安装座。从半导体结构去除生长衬底，并且省略厚的透明衬底，使得在一些实施例中，器件中的半导体层的总厚度小于15μm，在一些实施例中小于10μm。半导体结构的顶侧可以是纹理的。

10. 发明授权

US08507929B2 Semiconductor light emitting device including graded region 有权
标题翻译：半导体发光器件包括分级区域
公开(公告)号：US08507929B2
公开(公告)日：2013-08-13
申请号：US12139999
申请日：2008-06-16
申请人： Patrick N. Grillot , Rafael I. Aldaz , Eugene I. Chen , Sateria Salim
发明人： Patrick N. Grillot , Rafael I. Aldaz , Eugene I. Chen , Sateria Salim
IPC分类号： H01L33/00 , H01L33/12 , H01L21/00
CPC分类号： H01L33/12 , H01L33/00 , H01L33/02 , H01L33/30
摘要： One or more regions of graded composition are included in a III-P light emitting device, to reduce the Vf associated with interfaces in the device. In accordance with embodiments of the invention, a semiconductor structure comprises a III-P light emitting layer disposed between an n-type region and a p-type region. A graded region is disposed between the p-type region and a GaP window layer. The aluminum composition is graded in the graded region. The graded region may have a thickness of at least 150 nm. In some embodiments, in addition to or instead of a graded region between the p-type region and the GaP window layer, the aluminum composition is graded in a graded region disposed between an etch stop layer and the n-type region.
摘要翻译： III-P发光器件中包括一个或多个渐变成分区域，以减少与器件中的接口相关联的Vf。根据本发明的实施例，半导体结构包括设置在n型区域和p型区域之间的III-P发光层。在p型区域和GaP窗口层之间设置分级区域。铝组合物在分级区域分级。分级区域可以具有至少150nm的厚度。在一些实施例中，除了或代替p型区域和GaP窗口层之间的渐变区域之外，铝组合物在设置在蚀刻停止层和n型区域之间的渐变区域中分级。

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