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    • 1. 发明授权
    • Circuits for improving the reliablity of antifuses in integrated circuits
    • 用于提高集成电路中反熔丝可靠性的电路
    • US5680360A
    • 1997-10-21
    • US473039
    • 1995-06-06
    • David J. PillingRaymond M. ChuSik K. Lui
    • David J. PillingRaymond M. ChuSik K. Lui
    • G11C17/18G11C17/16
    • G11C17/18
    • A circuit improves the reliability of antifuses in certain types of systems by substantially eliminating the continuous undesirable applications of voltages across antifuse terminals. To accomplish this, an antifuse has applied across its two terminals a "reading" or "evaluation" voltage as required by the system operation for a single read or evaluation clock period (typically 5 ns to 30 ns in duration). The signal describing the state of the antifuse is then stored in a latch, register, or other suitable structure for subsequent sampling. In this manner, a low read current flows in the antifuse in response to the standard chip operating voltage for only a short period of time such as a single clock cycle. Thus, continuous voltages across the two terminals of the antifuse are avoided and an unprogrammed antifuse is not inadvertently programmed and a programmed antifuse is not inadvertently converted back to its high impedance state (i.e. "unprogrammed"). In another embodiment, a multiplexer coupled to a terminal of the antifuse switches the terminal of the antifuse to a programming voltage node when the antifuse is selected for programming and to a reference voltage source when the antifuse is not selected for programming. The multiplexer prevents undesired voltages from being applied across the antifuse while other antifuses are being programmed. The two embodiments discussed may be used in conjunction with each other or separately.
    • 电路通过基本消除反熔丝端子上的电压的连续不期望的应用来提高某些类型系统中反熔丝的可靠性。 为了实现这一点,反熔丝在其两个端子上施加了对于单个读取或评估时钟周期(通常为5ns至30ns的持续时间)的系统操作所需的“读取”或“评估”电压。 然后将描述反熔丝的状态的信号存储在锁存器,寄存器或其他合适的结构中,用于随后的采样。 以这种方式,仅在短时间段(例如单个时钟周期)内,低反向电流响应于标准芯片工作电压而流过反熔丝。 因此,避免了反熔丝两端的连续电压,并且不会无意地编程未编程的反熔丝,并且编程的反熔丝不会无意中转换回其高阻抗状态(即“未编程”)。 在另一个实施例中,当反熔丝被选择用于编程时,耦合到反熔丝的端子的多路复用器将反熔丝的端子切换到编程电压节点,并且当反熔丝未被选择用于编程时,将其转换为参考电压源。 多路复用器防止在反熔丝跨越反熔丝而施加不需要的电压,而其他反熔丝被编程。 所讨论的两个实施例可以彼此结合使用或分开使用。
    • 2. 发明授权
    • Circuits for improving the reliability of antifuses in integrated
circuits
    • 用于提高集成电路中反熔丝可靠性的电路
    • US5838624A
    • 1998-11-17
    • US850902
    • 1997-05-02
    • David J. PillingRaymond M. ChuSik K. Lui
    • David J. PillingRaymond M. ChuSik K. Lui
    • G11C17/18G11C17/16
    • G11C17/18
    • A circuit improves the reliability of antifuses in certain types of systems by substantially eliminating the continuous undesirable applications of voltages across antifuse terminals. To accomplish this, an antifuse has applied across its two terminals a "reading" or "evaluation" voltage as required by the system operation for a single read or evaluation clock period (typically 5 ns to 30 ns in duration). The signal describing the state of the antifuse is then stored in a latch, register, or other suitable structure for subsequent sampling. In this manner, a low read current flows in the antifuse in response to the standard chip operating voltage for only a short period of time such as a single clock cycle. Thus, continuous voltages across the two terminals of the antifuse are avoided and an unprogrammed antifuse is not inadvertently programmed and a programmed antifuse is not inadvertently converted back to its high impedance state (i.e. "unprogrammed"). In another embodiment, a multiplexer coupled to a terminal of the antifuse switches the terminal of the antifuse to a programming voltage node when the antifuse is selected for programming and to a reference voltage source when the antifuse is not selected for programming. The multiplexer prevents undesired voltages from being applied across the antifuse while other antifuses are being programmed. The two embodiments discussed may be used in conjunction with each other or separately.
    • 电路通过基本消除反熔丝端子上的电压的连续不期望的应用来提高某些类型系统中反熔丝的可靠性。 为了实现这一点,反熔丝在其两个端子上施加了对于单个读取或评估时钟周期(通常为5ns至30ns的持续时间)的系统操作所需的“读取”或“评估”电压。 然后将描述反熔丝的状态的信号存储在锁存器,寄存器或其他合适的结构中,用于随后的采样。 以这种方式,仅在短时间段(例如单个时钟周期)内,低反向电流响应于标准芯片工作电压而流过反熔丝。 因此,避免了反熔丝两端的连续电压,并且不会无意地编程未编程的反熔丝,并且编程的反熔丝不会无意中转换回其高阻抗状态(即“未编程”)。 在另一个实施例中,当反熔丝被选择用于编程时,耦合到反熔丝的端子的多路复用器将反熔丝的端子切换到编程电压节点,并且当反熔丝未被选择用于编程时,将其转换为参考电压源。 多路复用器防止在反熔丝跨越反熔丝而施加不需要的电压,而其他反熔丝被编程。 所讨论的两个实施例可以彼此结合使用或分开使用。
    • 6. 发明授权
    • Interleaved burst address counter with reduced delay between rising
clock edge and burst address transfer to memory
    • 交错突发地址计数器,在上升时钟沿和突发地址传输到存储器之间的延迟减小
    • US5950233A
    • 1999-09-07
    • US755074
    • 1996-11-21
    • Raymond M. ChuDavid J. PillingJohn R. Mick
    • Raymond M. ChuDavid J. PillingJohn R. Mick
    • G06F13/16G06F12/02
    • G06F13/161
    • A burst address sequencer and method for providing sequential addresses to a memory which operates in response to a clock signal. The burst address sequencer includes a plurality of two-stage address registers, with an address register being provided for each address bit. Prior to an initial rising edge of the clock signal, an initial address is loaded into the first stages of the two-stage address registers. In response to the initial rising edge of the clock signal, the initial address is clocked through the second stages of the two-stage address registers, directly to the memory. Subsequent addresses are derived from the initial address by circuitry within the burst address sequencer. These subsequent burst addresses are provided to the first stages of the addresses registers prior to subsequent rising edges of the clock signal and clocked out to the memory in response to these subsequent rising edges of the clock signal. By providing the addresses directly from the second stage of the address registers to the memory, the logic gate delay associated with providing the addresses to the memory in response to the rising edge of the clock signal is minimized.
    • 一种突发地址定序器和方法,用于向响应于时钟信号操作的存储器提供顺序地址。 突发地址定序器包括多个两级地址寄存器,其中为每个地址位提供地址寄存器。 在时钟信号的初始上升沿之前,初始地址被加载到两级地址寄存器的第一级。 响应于时钟信号的初始上升沿,初始地址通过两级地址寄存器的第二级被直接送到存储器。 随后的地址由突发地址定序器内的电路从初始地址中导出。 这些后续突发地址在时钟信号的后续上升沿之前被提供给地址寄存器的第一级,并且响应于时钟信号的这些随后的上升沿而被输出到存储器。 通过从地址寄存器的第二级直接提供地址到存储器,使得响应于时钟信号的上升沿向存储器提供地址的逻辑门延迟最小化。
    • 10. 发明授权
    • Memories and amplifiers suitable for low voltage power supplies
    • 适用于低压电源的存储器和放大器
    • US5325335A
    • 1994-06-28
    • US894414
    • 1992-06-05
    • Michael A. AngDavid J. Pilling
    • Michael A. AngDavid J. Pilling
    • G11C7/06G11C11/419G11C11/40
    • G11C7/065G11C11/419
    • A sense amplifier for a static memory includes two pull-up transistors. The gate of each transistor is coupled to the drain of the other transistor. A circuitry is provided for precharging the drains of both pull-up transistors to a selected voltage such that by the start of the tracking stage of the amplifier, both pull-up transistors are off. If the tracking stage is long enough, one pull-up transistor turns on while the other one remains off, so that before the start of the sensing stage both pull-up transistors reach their final ON/OFF states. Hence the amplifier is fast and power efficient. The memory bit lines are precharged to VCC before the tracking stage, improving the read-disturb immunity and hence allowing a wider range of voltages on the bit lines and the sense amplifier inputs. The noise immunity and tolerance to temperature process variations are improved as a result. The high noise immunity make the amplifier and the memory suitable for integration with noisy circuits such as CPUs. High speed, high power efficiency, high noise immunity, high tolerance to temperature and process variations and high permissible range of bit line voltages make the memory and the amplifier suitable for low-voltage power supplies such as VCC=3.0 V supplies used in lap-top, notebook, sub-note book, and hand-held computers.
    • 用于静态存储器的读出放大器包括两个上拉晶体管。 每个晶体管的栅极耦合到另一个晶体管的漏极。 提供了一种用于将两个上拉晶体管的漏极预充电到所选电压的电路,使得通过放大器的跟踪级开始,两个上拉晶体管截止。 如果跟踪阶段足够长,则一个上拉晶体管导通,而另一个上拉晶体管导通,因此在感测阶段开始之前,两个上拉晶体管都达到其最终的ON / OFF状态。 因此,放大器是快速和功率效率。 在跟踪阶段之前,存储器位线被预充电到VCC,从而提高读干扰抗扰度,从而允许位线和读出放大器输入端的电压范围更宽。 结果,噪声抗扰度和对温度变化的耐受性得到改善。 高抗噪性使放大器和存储器适合与诸如CPU之类的噪声电路集成。 高速,高功率效率,高抗噪声能力,高耐温度和工艺变化以及高位允许范围的位线电压使存储器和放大器适用于低压电源,如VCC = 3.0 V电源, 顶部,笔记本,子笔记本和手持电脑。