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    • 2. 发明授权
    • Magnetoresistive sensor element with selective magnetization direction of the bias layer
    • 具有偏置层选择性磁化方向的磁阻传感器元件
    • US06373247B1
    • 2002-04-16
    • US09530699
    • 2000-04-03
    • Klaus MarxHartmut KittelFranz JostMartin Freitag
    • Klaus MarxHartmut KittelFranz JostMartin Freitag
    • G01B714
    • G01D5/145B82Y25/00G01B7/30G01R33/093
    • A magnetoresistive sensor element, in particular an angle sensor element, has a first, magnetic layer (3) whose direction of magnetization represents a reference direction, a second, nonmagnetic layer (2) formed on the first layer (3), a third magnetic layer (1), formed on the second layer (2), whose direction of magnetization can be varied by an external magnetic field, and an additional layer consisting of a current conductor (5) for selective orientation of the direction of magnetization of the first layer (3). A current flow direction of an electric current that passes through the current conductor (5) can be switched to change the magnetization direction of the first magnetic layer (3) to create different reference directions. An insulation layer (4) for galvanic separation of the first magnetic layer (3) from the additional layer (5) is also provided between them.
    • 磁阻传感器元件,特别是角度传感器元件具有第一磁化层(3),其磁化方向表示参考方向,第二非磁性层(2)形成在第一层(3)上,第三磁体 形成在第二层(2)上的层(1),其磁化方向可以通过外部磁场变化,以及由电流导体(5)组成的附加层,用于选择性地取向第一 层(3)。 可以切换通过电流导体(5)的电流的电流流动方向,以改变第一磁性层(3)的磁化方向,以产生不同的参考方向。 在它们之间还设有用于将第一磁性层(3)与附加层(5)电隔离的绝缘层(4)。
    • 3. 发明授权
    • Method for manufacturing a giant resistive ratio (GMR) bridge detector and a magnetoresistive bridge detector
    • 用于制造巨型电阻比(GMR)桥式检测器和磁阻桥式检测器的方法
    • US06339329B1
    • 2002-01-15
    • US09171074
    • 1999-04-29
    • Christian NeumannKlaus MarxFranz JostMartin FreitagDietmar Senghaas
    • Christian NeumannKlaus MarxFranz JostMartin FreitagDietmar Senghaas
    • G01R3309
    • G01R33/09H01L43/12Y10T29/49034
    • A method for manufacturing a GMR bridge detector as well as the bridge detector itself in which magnetoresistive resistors are interconnected in the form of a bridge to detect a magnetic field. The resistors consist of a material that exhibits the giant magnetoresistive ratio (GMR) effect. The magnetoresistive sensitivity of the individual resistors is produced through annealing. The annealing of the resistors takes place through selective feeding of a current that is sufficient for reaching the temperature required for annealing into the bridge connections. Depending on the wiring of the bridge connections, the resistors are provided with the property necessary for the GMR effect either singly or in pairs. As the material for the resistors, in particular, a material of the class of discontinuous multilayer materials, particularly NiFe/Ag, is used in which the GMR property is produced through single annealing at a specific temperature.
    • 用于制造GMR桥式检测器的方法以及桥式检测器本身,其中磁阻电阻器以桥的形式互连以检测磁场。 电阻由表现出巨磁阻比(GMR)效应的材料组成。 各个电阻器的磁阻灵敏度通过退火产生。 电阻器的退火通过选择性地馈送足以达到退火到桥连接所需的温度的电流而进行。 根据桥接器的接线,电阻器可以单独或成对地提供GMR效应所需的特性。 作为电阻器的材料,特别地,使用不连续的多层材料,特别是NiFe / Ag的材料,其中通过在特定温度下的单一退火来生产GMR性质。