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1. 发明授权

US06537929B1 CVD plasma assisted low dielectric constant films 失效
公开(公告)号：US06537929B1
公开(公告)日：2003-03-25
申请号：US09580505
申请日：2000-05-25
申请人： David Cheung , Wai-Fan Yau , Robert R. Mandal
发明人： David Cheung , Wai-Fan Yau , Robert R. Mandal
IPC分类号： H01L2131
CPC分类号： H01L21/76832 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L2221/1031
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.

2. 发明授权

US06287990B1 CVD plasma assisted low dielectric constant films 有权
标题翻译： CVD等离子体辅助低介电常数膜
公开(公告)号：US06287990B1
公开(公告)日：2001-09-11
申请号：US09162915
申请日：1998-09-29
申请人： David Cheung , Wai-Fan Yau , Robert R. Mandal
发明人： David Cheung , Wai-Fan Yau , Robert R. Mandal
IPC分类号： C23C16505
CPC分类号： H01L21/76832 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L2221/1031
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
摘要翻译：一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫或盖层邻近其它电介质层。氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

3. 发明授权

US06800571B2 CVD plasma assisted low dielectric constant films 失效
标题翻译： CVD等离子体辅助低介电常数膜
公开(公告)号：US06800571B2
公开(公告)日：2004-10-05
申请号：US10322212
申请日：2002-12-17
申请人： David Cheung , Wai-Fan Yau , Robert R. Mandal
发明人： David Cheung , Wai-Fan Yau , Robert R. Mandal
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76835
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
摘要翻译：一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫或盖层邻近其它电介质层。氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

4. 发明授权

US06660663B1 Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds 失效
标题翻译：用于保持由有机硅烷化合物形成的低介电常数膜的等离子体辅助CVD的程序的计算机可读介质
公开(公告)号：US06660663B1
公开(公告)日：2003-12-09
申请号：US09579819
申请日：2000-05-25
申请人： David Cheung , Wai-Fan Yau , Robert R. Mandal
发明人： David Cheung , Wai-Fan Yau , Robert R. Mandal
IPC分类号： H01L2131
CPC分类号： H01L21/76832 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L21/76835 , H01L2221/1031
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
摘要翻译：一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫或盖层邻近其它电介质层。氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

5. 发明授权

US07205249B2 CVD plasma assisted low dielectric constant films 有权
标题翻译： CVD等离子体辅助低介电常数膜
公开(公告)号：US07205249B2
公开(公告)日：2007-04-17
申请号：US10958772
申请日：2004-10-05
申请人： David Cheung , Wai-Fan Yau , Robert R. Mandal
发明人： David Cheung , Wai-Fan Yau , Robert R. Mandal
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76835
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10–30% of the duty cycle.
摘要翻译：一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫或盖层邻近其它电介质层。氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3或二甲基硅烷（CH 3 3）2 / SO 2 H 2 O 2，和一氧化二氮N 2 O，RF功率水平为约10至200W，或脉冲RF功率水平为约20至250 W占用周期的10-30％。

6. 发明申请

US20050191846A1 Plasma processes for depositing low dielectric constant films 有权
公开(公告)号：US20050191846A1
公开(公告)日：2005-09-01
申请号：US11087393
申请日：2005-03-22
申请人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
发明人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

7. 发明授权

US06632735B2 Method of depositing low dielectric constant carbon doped silicon oxide 失效
标题翻译：沉积低介电常数碳掺杂氧化硅的方法
公开(公告)号：US06632735B2
公开(公告)日：2003-10-14
申请号：US09924240
申请日：2001-08-07
申请人： Wai-Fan Yau , Ju-Hyung Lee , Nasreen Gazala Chopra , Tzu-Fang Huang , David Cheung , Farhad Moghadam , Kuo-Wei Liu , Yung-Cheng Lu , Ralf B. Willecke , Paul Matthews , Dian Sugiarto
发明人： Wai-Fan Yau , Ju-Hyung Lee , Nasreen Gazala Chopra , Tzu-Fang Huang , David Cheung , Farhad Moghadam , Kuo-Wei Liu , Yung-Cheng Lu , Ralf B. Willecke , Paul Matthews , Dian Sugiarto
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02274 , H01L21/02337 , H01L21/31633
摘要： A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.
摘要翻译：公开了形成碳掺杂氧化硅层的方法。碳掺杂氧化硅层通过向包含有机硅烷化合物和氧化气体的气体混合物施加电场而形成。碳掺杂氧化硅层与集成电路制造工艺兼容。在一个集成电路制造工艺中，碳掺杂氧化硅层用作金属间介电层。在另一个集成电路制造工艺中，掺杂碳的氧化硅层被结合到镶嵌结构中

8. 发明授权

US06562690B1 Plasma processes for depositing low dielectric constant films 失效
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06562690B1
公开(公告)日：2003-05-13
申请号：US09594186
申请日：2000-06-13
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： H01L2176
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平或约20W的脉冲RF功率水平在占用周期的10％到30％的范围内达到约250W。

9. 发明授权

US06171945B2 CVD nanoporous silica low dielectric constant films 有权
标题翻译： CVD纳米多孔硅低介电常数膜
公开(公告)号：US06171945B2
公开(公告)日：2001-01-09
申请号：US09177044
申请日：1998-10-22
申请人： Robert P. Mandal , David Cheung , Wai-Fan Yau
发明人： Robert P. Mandal , David Cheung , Wai-Fan Yau
IPC分类号： H01L2131
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/31695 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76835
摘要： A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a foam structure. The nano-porous silicon oxide based films are useful for filling gaps between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of 1,3,5-trisilanacyclohexane, bis(formyloxysilano)methane, or bis(glyoxylylsilano)methane and hydrogen peroxide followed by a cure/anneal that includes a gradual increase in temperature.
摘要翻译：一种用于通过含硅氢化物的化合物或任选地具有热不稳定性有机基团的混合物与基质表面上的过氧化物化合物反应沉积纳米多孔低介电常数膜的方法和装置。将沉积的氧化硅基膜退火以形成留在具有泡沫结构的纳米多孔氧化硅基膜中的分散的微观空隙。纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间填充间隙。纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。优选的纳米多孔氧化硅基膜是通过1,3,5-三硅烷环己烷，双（甲酰氧基甲硅烷基）甲烷或双（乙酰氧基二硅烷基）甲烷和过氧化氢的反应制备的，然后进行包括逐渐升高的固化/退火。

10. 发明授权

US6156149A In situ deposition of a dielectric oxide layer and anti-reflective coating 失效
标题翻译：电介质氧化物层和抗反射涂层的原位沉积
公开(公告)号：US6156149A
公开(公告)日：2000-12-05
申请号：US852788
申请日：1997-05-07
申请人： David Cheung , Judy H. Huang , Wai-Fan Yau
发明人： David Cheung , Judy H. Huang , Wai-Fan Yau
IPC分类号： H01L21/31 , C23C16/52 , H01L21/027 , H01L21/768 , B32B31/00
CPC分类号： C23C16/52 , H01L21/0276 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： This invention provides a method and apparatus for depositing a two-layer structure, including an antireflective coating and a dielectric layer, without any intervening process steps, such as a cleaning step. The invention is capable of providing more accurate and easier fabrication of structures by reducing inaccuracies caused by the reflection and refraction of incident radiant energy within a photoresist layer used in the patterning of the dielectric layer. Additionally, the antireflective coating of the present invention may also serve as an etch stop layer during the patterning of a layer formed over the antireflective coating.
摘要翻译：本发明提供了一种用于沉积包括抗反射涂层和电介质层的双层结构的方法和装置，而没有任何中间工艺步骤，例如清洁步骤。本发明能够通过减少由在电介质层的图形化中使用的光致抗蚀剂层内的入射辐射能的反射和折射引起的不精确度来提供更准确和更容易的结构制造。此外，本发明的抗反射涂层还可以在形成在抗反射涂层上形成的层的图案化中用作蚀刻停止层。

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