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1. 发明申请

US20050191846A1 Plasma processes for depositing low dielectric constant films 有权
公开(公告)号：US20050191846A1
公开(公告)日：2005-09-01
申请号：US11087393
申请日：2005-03-22
申请人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
发明人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

2. 发明授权

US06448187B2 Method of improving moisture resistance of low dielectric constant films 失效
标题翻译：提高低介电常数膜耐湿性的方法
公开(公告)号：US06448187B2
公开(公告)日：2002-09-10
申请号：US09792122
申请日：2001-02-21
申请人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
发明人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02211 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3125 , H01L21/31633 , H01L21/76807
摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
摘要翻译：用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，将氧化硅基膜暴露于水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。氧化硅系膜的耐湿性提高。

3. 发明授权

US06743737B2 Method of improving moisture resistance of low dielectric constant films 有权
标题翻译：提高低介电常数膜耐湿性的方法
公开(公告)号：US06743737B2
公开(公告)日：2004-06-01
申请号：US10226717
申请日：2002-08-22
申请人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
发明人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02211 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3125 , H01L21/31633 , H01L21/76807
摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
摘要翻译：用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。氧化硅系膜的耐湿性提高。

4. 发明授权

US06245690B1 Method of improving moisture resistance of low dielectric constant films 有权
标题翻译：提高低介电常数膜耐湿性的方法
公开(公告)号：US06245690B1
公开(公告)日：2001-06-12
申请号：US09187460
申请日：1998-11-04
申请人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
发明人： Wai-Fan Yau , David Cheung , Nasreen Gazala Chopra , Yung-Cheng Lu , Robert Mandal , Farhad Moghadam
IPC分类号： C23C1640
CPC分类号： H01L21/02211 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3125 , H01L21/31633 , H01L21/76807
摘要： A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
摘要翻译：用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。氧化硅系膜的耐湿性提高。

5. 发明申请

US20050059264A1 CVD plasma assisted low dielectric constant films 有权
标题翻译： CVD等离子体辅助低介电常数膜
公开(公告)号：US20050059264A1
公开(公告)日：2005-03-17
申请号：US10958772
申请日：2004-10-05
申请人： David Cheung , Wai-Fan Yau , Robert Mandal
发明人： David Cheung , Wai-Fan Yau , Robert Mandal
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76835
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
摘要翻译：一种用于通过有机硅烷或有机硅氧烷化合物和氧化性气体以10-250W的低RF功率水平反应沉积低介电常数膜的方法和装置。氧化的有机硅烷或有机硅氧烷膜具有良好的阻挡性能，用作衬垫或盖层邻近其它电介质层。氧化的有机硅烷或有机硅氧烷膜也可用作制造双镶嵌结构的蚀刻停止层或金属间介质层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10至200W的RF功率水平或约20至250的RF功率水平反应来制备 W占用周期的10-30％。

6. 发明申请

US20060226548A1 VERY LOW DIELECTRIC CONSTANT PLASMA-ENHANCED CVD FILMS 有权
标题翻译：非常低的电介质等离子体增强CVD膜
公开(公告)号：US20060226548A1
公开(公告)日：2006-10-12
申请号：US11424790
申请日：2006-06-16
申请人： Robert Mandal
发明人： Robert Mandal
IPC分类号： H01L23/48
CPC分类号： C23C16/401 , C23C16/402 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31695 , Y10T428/249969 , Y10T428/249976 , Y10T428/249978 , Y10T428/249994
摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.
摘要翻译：本发明提供一种沉积纳米多孔低介电常数膜的方法，该方法通过使含氧化硅的化合物或包含可氧化硅组分的混合物和具有热可能性基团的可氧化非硅组分与一氧化二氮，氧，臭氧或其它气相等离子体增强反应中活性氧的来源。将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。优选的纳米多孔氧化硅基膜是通过甲基甲硅烷基-1,4-二氧杂环戊烯醚或甲基硅氧烷基呋喃与2,4,6-三吡咯烷或环-1,3,5,7-四亚锡-2,6-二氧代 -4,8二亚甲基与一氧化二氮或氧气接着进行包括逐渐升高的固化/退火。

7. 发明申请

US20050153574A1 Very low dielectric constant plasma-enhanced CVD films 有权
标题翻译：非常低的介电常数等离子体增强CVD膜
公开(公告)号：US20050153574A1
公开(公告)日：2005-07-14
申请号：US11001761
申请日：2004-12-02
申请人： Robert Mandal
发明人： Robert Mandal
IPC分类号： H01L21/768 , C23C16/40 , C23C16/56 , H01L21/205 , H01L21/316 , H01L23/522 , H01L21/311 , H01L21/31 , H01L21/469
CPC分类号： C23C16/401 , C23C16/402 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31695 , Y10T428/249969 , Y10T428/249976 , Y10T428/249978 , Y10T428/249994
摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.
摘要翻译：本发明提供一种沉积纳米多孔低介电常数膜的方法，该方法通过使含氧化硅的化合物或包含可氧化硅组分的混合物和具有热可能性基团的可氧化非硅组分与一氧化二氮，氧，臭氧或其它气相等离子体增强反应中活性氧的来源。将沉积的氧化硅基膜退火以形成残留在具有低密度结构的纳米多孔氧化硅基膜中的分散的微观空隙。纳米多孔氧化硅基膜可用于在具有或不具有衬层或盖层的金属线之间形成层。纳米多孔氧化硅基膜也可以用作制造双镶嵌结构的金属间介电层。优选的纳米多孔氧化硅基膜是通过甲基甲硅烷基-1,4-二氧杂环戊烯醚或甲基硅氧烷基呋喃与2,4,6-三吡咯烷或环-1,3,5,7-四亚锡-2,6-二氧代 -4,8二亚甲基与一氧化二氮或氧气接着进行包括逐渐升高的固化/退火。

8. 发明申请

US20060240652A1 VERY LOW DIELECTRIC CONSTANT PLASMA-ENHANCED CVD FILMS 有权
公开(公告)号：US20060240652A1
公开(公告)日：2006-10-26
申请号：US11424719
申请日：2006-06-16
申请人： Robert Mandal
发明人： Robert Mandal
IPC分类号： H01L21/22 , H01L21/38 , H01L21/4763
CPC分类号： C23C16/401 , C23C16/402 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31695 , Y10T428/249969 , Y10T428/249976 , Y10T428/249978 , Y10T428/249994
摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures. Preferred nano-porous silicon oxide based films are produced by reaction of methylsilyl-1,4-dioxinyl ether or methylsiloxanyl furan and 2,4,6-trisilaoxane or cyclo-1,3,5,7-tetrasilylene-2,6-dioxy-4,8 dimethylene with nitrous oxide or oxygen followed by a cure/anneal that includes a gradual increase in temperature.

9. 发明申请

US20050136240A1 Very low dielectric constant plasma-enhanced CVD films 有权
公开(公告)号：US20050136240A1
公开(公告)日：2005-06-23
申请号：US11001755
申请日：2004-12-02
申请人： Robert Mandal
发明人： Robert Mandal
IPC分类号： H01L21/768 , C23C16/40 , C23C16/56 , H01L21/205 , H01L21/316 , H01L23/522 , B32B3/26 , H01L21/302
CPC分类号： C23C16/401 , C23C16/402 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02214 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31695 , Y10T428/249969 , Y10T428/249976 , Y10T428/249978 , Y10T428/249994
摘要： The present invention provides a method for depositing nano-porous low dielectric constant films by reacting a mixture comprising an oxidizable silicon component and an oxidizable component having thermally labile groups with an oxidizing gas in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.

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