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1. 发明授权

US08119324B2 Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film 有权
标题翻译：形成图案的方法，用于形成上层膜的组合物和用于形成底层膜的组合物
公开(公告)号：US08119324B2
公开(公告)日：2012-02-21
申请号：US12375915
申请日：2007-07-27
申请人： Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
发明人： Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0757 , G03F7/265
摘要： A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.
摘要翻译：提供了适用于使用电子束（EB），X射线或极紫外线（EUV）形成微图案的图形形成方法。该方法按以下顺序包括以下步骤：（1）形成和固化含有辐射敏感性酸产生剂的底层膜的步骤，所述辐射敏感酸产生剂在暴露于基材上时产生酸，（2）步骤通过掩模用辐射照射底层膜以在底层膜的暴露区域中选择性地产生酸，（3）形成不含辐射敏感性的上层膜的步骤酸产生剂，但含有能够通过酸的作用聚合或交联的组合物，（4）通过聚合或选择性地在上层膜对应于下面的区域的区域中选择性地交联固化膜的步骤产生酸的层 - 膜，以及（5）除去与未生成酸的下层膜的面积对应的上层膜的面积的工序。

2. 发明授权

US08173348B2 Method of forming pattern and composition for forming of organic thin-film for use therein 有权
标题翻译：形成用于形成有机薄膜的图案和组合物的方法
公开(公告)号：US08173348B2
公开(公告)日：2012-05-08
申请号：US12305893
申请日：2007-06-21
申请人： Daisuke Shimizu , Hikaru Sugita , Nobuji Matsumura , Toshiyuki Kai , Tsutomu Shimokawa
发明人： Daisuke Shimizu , Hikaru Sugita , Nobuji Matsumura , Toshiyuki Kai , Tsutomu Shimokawa
IPC分类号： G03F7/00 , G03F7/004 , G03F7/075 , G03F7/40
CPC分类号： C07D333/18 , G03F7/0045 , G03F7/0757 , G03F7/265
摘要： A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.
摘要翻译：形成图案的方法包括（1）形成下层膜的步骤，其含有（A）在暴露于辐射线时能够产生酸的辐射敏感性酸产生剂，或（B）能够产生基底上暴露于辐射线; （2）通过具有预定图案的掩模的辐射线照射下层膜以获得通过预定图案选择性曝光的曝光的下层膜部分的步骤; （3）在下层膜上形成（C）有机薄膜以使曝光的下层膜与形成在曝光的下层膜部上的有机薄膜化学接合的工序; 以及（4）除去在下层膜以外的形成在有机薄膜上的除了曝光的下层膜部分以外的部分的工序。

3. 发明授权

US08450045B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US08450045B2
公开(公告)日：2013-05-28
申请号：US13352384
申请日：2012-01-18
申请人： Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
发明人： Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/40
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0757 , G03F7/265
摘要： A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.
摘要翻译：图案形成方法包括提供和固化含有辐射敏感性酸产生剂的底层膜，其在暴露于基底上的辐射时产生酸。底层膜通过掩模用辐射照射，以在底层膜的暴露区域中选择性地产生酸。提供了不含有辐射敏感性酸产生剂并且含有能够通过酸的作用聚合或交联的组合物的上层膜。通过在与产生酸的底层膜的暴露区域相对应的上层膜的区域中选择性地聚合或交联固化膜。除去与未生成酸的下层膜的区域对应的上层膜的区域。

4. 发明申请

US20100233635A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN 有权
标题翻译：形成用于形成有机薄膜的图案和组合物的方法
公开(公告)号：US20100233635A1
公开(公告)日：2010-09-16
申请号：US12305893
申请日：2007-06-21
申请人： Daisuke Shimizu , Hikaru Sugita , Nobuji Matsumura , Toshiyuki Kai , Tsutomu Shimokawa
发明人： Daisuke Shimizu , Hikaru Sugita , Nobuji Matsumura , Toshiyuki Kai , Tsutomu Shimokawa
IPC分类号： G03F7/20 , C09K3/00
CPC分类号： C07D333/18 , G03F7/0045 , G03F7/0757 , G03F7/265
摘要： A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.
摘要翻译：形成图案的方法包括（1）形成下层膜的步骤，其含有（A）在暴露于辐射线时能够产生酸的辐射敏感性酸产生剂，或（B）能够产生基底上暴露于辐射线; （2）通过具有预定图案的掩模的辐射线照射下层膜以获得通过预定图案选择性曝光的曝光的下层膜部分的步骤; （3）在下层膜上形成（C）有机薄膜以使曝光的下层膜与形成在曝光的下层膜部上的有机薄膜化学接合的工序; 以及（4）除去在下层膜以外的形成在有机薄膜上的除了曝光的下层膜部分以外的部分的工序。

5. 发明申请

US20090311622A1 METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING UNDER-LAYER FILM 有权
标题翻译：形成图案的方法，形成上层膜的组合物和形成层状膜的组合物
公开(公告)号：US20090311622A1
公开(公告)日：2009-12-17
申请号：US12375915
申请日：2007-07-27
申请人： Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
发明人： Hikaru Sugita , Nobuji Matsumura , Daisuke Shimizu , Toshiyuki Kai , Tsutomu Shimokawa
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0757 , G03F7/265
摘要： A pattern formation method suitable for forming micro-patterns using electron beams (EB), X-rays, or extreme ultraviolet radiation (EUV) is provided. The method includes the following steps in the following order: (1) a step of forming and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate, (2) a step of irradiating the under-layer film with radiation through a mask to cause an acid to be selectively generated in the exposed area of the under-layer film, (3) a step of forming an upper-layer film which does not contain a radiation-sensitive acid generator, but contains a composition capable of polymerization or crosslinking by the action of an acid, (4) a step of forming a cured film by polymerization or crosslinking selectively in the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has been generated, and (5) a step of removing the area of the upper-layer film corresponding to the area of the under-layer film in which the acid has not been generated.
摘要翻译：提供了适用于使用电子束（EB），X射线或极紫外线（EUV）形成微图案的图形形成方法。该方法按以下顺序包括以下步骤：（1）形成和固化含有辐射敏感性酸产生剂的底层膜的步骤，所述辐射敏感酸产生剂在暴露于基材上时产生酸，（2）步骤通过掩模用辐射照射底层膜以在底层膜的暴露区域中选择性地产生酸，（3）形成不含辐射敏感性的上层膜的步骤酸产生剂，但含有能够通过酸的作用聚合或交联的组合物，（4）通过聚合或选择性地在上层膜对应于下面的区域的区域中选择性地交联固化膜的步骤产生酸的层 - 膜，以及（5）除去与未生成酸的下层膜的面积对应的上层膜的面积的工序。

6. 发明授权

US07037994B2 Acenaphthylene derivative, polymer, and antireflection film-forming composition 有权
标题翻译：苊烯衍生物，聚合物和抗反射膜形成组合物
公开(公告)号：US07037994B2
公开(公告)日：2006-05-02
申请号：US10624678
申请日：2003-07-23
申请人： Hikaru Sugita , Keiji Konno , Masato Tanaka , Tsutomu Shimokawa
发明人： Hikaru Sugita , Keiji Konno , Masato Tanaka , Tsutomu Shimokawa
IPC分类号： C08F32/08 , C08F12/32 , C08F132/08
CPC分类号： C07C69/14 , C07C33/38 , C07C2603/20 , G03F7/091
摘要： Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R1 is a hydrogen atom and R2and R3 individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.
摘要翻译：公开了新型化合物乙酰氧基甲基苊烯和羟甲基苊。由含有式（3）结构单元的这些新化合物制备的聚合物，其中R 1是氢原子，R 2和R 3， SUP>分别表示一价原子或一价有机基团。聚合物适合作为抗反射膜形成组合物的组分，其具有高抗反射效果并且不会与抗蚀剂膜混合。

7. 发明申请

US20090098486A1 COMPOSITION FOR FORMING LOWER LAYER FILM AND PATTERN FORMING METHOD 有权
标题翻译：用于形成下层薄膜和图案形成方法的组合物
公开(公告)号：US20090098486A1
公开(公告)日：2009-04-16
申请号：US12282599
申请日：2007-03-14
申请人： Nakaatsu Yoshimura , Yousuke Konno , Hikaru Sugita , Junichi Takahashi
发明人： Nakaatsu Yoshimura , Yousuke Konno , Hikaru Sugita , Junichi Takahashi
IPC分类号： G03F7/004 , C08G61/12 , G03F7/20
CPC分类号： G03F7/091 , G03F7/094 , G03F7/11 , Y10S430/106
摘要： A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.
摘要翻译：用于形成下层膜的组合物包括具有如下式（1）所示的萘衍生物结构单元的聚合物（A），其中R1表示羟基等，X表示具有1〜20碳的可取代亚烷基原子等，n表示0〜6，m表示1〜8，n + m表示1〜8的整数，条件是两个以上的R 1可以相同或不同，两个以上的X可以相同或不同。

8. 发明授权

US06576393B1 Composition for resist underlayer film and method for producing the same 有权
标题翻译：抗蚀剂下层膜用组合物及其制造方法
公开(公告)号：US06576393B1
公开(公告)日：2003-06-10
申请号：US09545453
申请日：2000-04-07
申请人： Hikaru Sugita , Akio Saito , Kinji Yamada , Michinori Nishikawa , Yoshihisa Ohta , Yoshiji Yuumoto
发明人： Hikaru Sugita , Akio Saito , Kinji Yamada , Michinori Nishikawa , Yoshihisa Ohta , Yoshiji Yuumoto
IPC分类号： G03C173
CPC分类号： G03F7/0751 , G03F7/09 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/124 , Y10S430/126
摘要： Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or —(CH2)n—, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
摘要翻译：公开了抗蚀剂图案的再现性优异的抗蚀剂下层膜的组合物，对抗蚀剂的附着性优异，对抗蚀剂曝光后使用的显影液的耐受性优异，抗蚀剂的氧气灰化的膜损失降低; 及其制备方法，该组合物包含：（A）至少一种选自（A-1）由下列通式（1）表示的化合物的化合物的水解产物和缩合物：）：其中R1表示氢原子，氟原子或一价有机基团，R2表示一价有机基团，a表示0〜2的整数，（A-2）由以下通式（ 2）：其中可以相同或不同的R 3，R 4，R 5和R 6各自表示一价有机基团，b和c可以相同或不同，各自表示0-2的整数，R7表示氧原子或 - （CH 2）n - ，d表示0或1，n表示1〜6的整数。和（B）通过紫外线照射和/或加热产生酸的化合物。

9. 发明申请

US20130004900A1 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM 有权
标题翻译：层状薄膜成膜方法，图案形成方法及层状薄膜电阻组合
公开(公告)号：US20130004900A1
公开(公告)日：2013-01-03
申请号：US13609373
申请日：2012-09-11
申请人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
发明人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
IPC分类号： B05D7/24 , C09D5/00 , B05D3/10 , G03F7/20
CPC分类号： G03F7/091 , G03F7/168
摘要： A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
摘要翻译：形成抗蚀剂下层膜的方法包括提供在待加工的基材上形成抗蚀剂下层膜的组合物。该组合物包括溶剂和杯芳烃化合物或杯芳烃化合物的衍生物。将该组合物设定为氧含量为1体积％以上的氧化气氛，形成抗蚀剂层下膜。

10. 发明授权

US08691496B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film 有权
标题翻译：用于形成抗蚀剂层下膜的方法，图案形成方法和抗蚀剂下层膜的组合物
公开(公告)号：US08691496B2
公开(公告)日：2014-04-08
申请号：US13609373
申请日：2012-09-11
申请人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
发明人： Yousuke Konno , Nakaatsu Yoshimura , Fumihiro Toyokawa , Hikaru Sugita
IPC分类号： G03F7/004
CPC分类号： G03F7/091 , G03F7/168
摘要： A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
摘要翻译：形成抗蚀剂下层膜的方法包括提供在待加工的基材上形成抗蚀剂下层膜的组合物。该组合物包括溶剂和杯芳烃化合物或杯芳烃化合物的衍生物。将该组合物设定为氧含量为1体积％以上的氧化气氛，形成抗蚀剂层下膜。

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