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    • 1. 发明授权
    • Composition for resist underlayer film and method for producing the same
    • 抗蚀剂下层膜用组合物及其制造方法
    • US06576393B1
    • 2003-06-10
    • US09545453
    • 2000-04-07
    • Hikaru SugitaAkio SaitoKinji YamadaMichinori NishikawaYoshihisa OhtaYoshiji Yuumoto
    • Hikaru SugitaAkio SaitoKinji YamadaMichinori NishikawaYoshihisa OhtaYoshiji Yuumoto
    • G03C173
    • G03F7/0751G03F7/09Y10S430/106Y10S430/115Y10S430/12Y10S430/122Y10S430/124Y10S430/126
    • Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R1aSi(OR2)4−a  (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R3b(R4O)3−bSi—(R7)d—Si(OR5)3−cR6c  (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or —(CH2)n—, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
    • 公开了抗蚀剂图案的再现性优异的抗蚀剂下层膜的组合物,对抗蚀剂的附着性优异,对抗蚀剂曝光后使用的显影液的耐受性优异,抗蚀剂的氧气灰化的膜损失降低; 及其制备方法,该组合物包含:(A)至少一种选自(A-1)由下列通式(1)表示的化合物的化合物的水解产物和缩合物: ):其中R1表示氢原子,氟原子或一价有机基团,R2表示一价有机基团,a表示0〜2的整数,(A-2)由以下通式( 2):其中可以相同或不同的R 3,R 4,R 5和R 6各自表示一价有机基团,b和c可以相同或不同,各自表示0-2的整数,R7表示氧 原子或 - (CH 2)n - ,d表示0或1,n表示1〜6的整数。 和(B)通过紫外线照射和/或加热产生酸的化合物。
    • 4. 发明申请
    • INDAZOLE DERIVATIVES
    • 吲哚衍生物
    • US20090082348A1
    • 2009-03-26
    • US12275614
    • 2008-11-21
    • Yoshihisa OhtaFumihiko KanaiShinji NaraYutaka KandaHiroshi UmeharaYukimasa ShiotsuTomoki NaoeHitoshi KiyoiKeiko KawashimaHiromi AndoMotoki Miyama
    • Yoshihisa OhtaFumihiko KanaiShinji NaraYutaka KandaHiroshi UmeharaYukimasa ShiotsuTomoki NaoeHitoshi KiyoiKeiko KawashimaHiromi AndoMotoki Miyama
    • A61K31/5377A61K31/416A61K31/496A61K31/454A61K31/506A61K31/4439A61P35/00
    • C07D231/56
    • The present invention provides a compound represented by Formula (I): [wherein R1 represents CONR1aR1b (wherein R1a and R1b may be the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, substituted or unsubstituted aryl, substituted or unsubstituted ararkyl or a substituted or unsubstituted heterocyclic group, or R1a and R1b are combined together with the adjacent nitrogen atom thereto to form a substituted or unsubstituted heterocyclic group) or the like, R2 represents a hydrogen atom, CONR2aR2b (wherein R2a and R2b may be the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, substituted or unsubstituted aryl, substituted or unsubstituted ararkyl or a substituted or unsubstituted heterocyclic group, or R2a and R2b are combined together with the adjacent nitrogen atom thereto to form a substituted or unsubstituted heterocyclic group), NR2cR2d (wherein R2c and R2d may be the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkanoyl, substituted or unsubstituted aroyl, substituted or unsubstituted heteroaroyl, substituted or unsubstituted ararkyl, substituted or unsubstituted lower alkylsulfonyl or substituted or unsubstituted lower arylsulfonyl) or the like].
    • 本发明提供由式(I)表示的化合物:[其中R1表示CONR1aR1b(其中R1a和R1b可以相同或不同,各自表示氢原子,取代或未取代的低级烷基,取代或未取代的芳基,取代或未取代的 芳基或取代或未取代的杂环基,或者R1a和R1b与相邻的氮原子一起形成取代或未取代的杂环基)等,R2表示氢原子,CONR2aR2b(其中R2a和R2b可以是 各自表示氢原子,取代或未取代的低级烷基,取代或未取代的芳基,取代或未取代的芳基或取代或未取代的杂环基,或者R 2a和R 2b与相邻的氮原子一起形成取代基 或未取代的杂环基),NR2cR2d(其中R2c和R2d可以相同或不同 取代或未取代的芳酰基,取代或未取代的芳酰基,取代或未取代的低级烷基磺酰基或取代或未取代的低级芳基磺酰基)等。 。
    • 5. 发明授权
    • Indazole derivatives
    • 吲唑衍生物
    • US07470717B2
    • 2008-12-30
    • US10548475
    • 2004-07-30
    • Yoshihisa OhtaFumihiko KanaiShinji NaraYutaka KandaHiroshi UmeharaYukimasa ShiotsuTomoki NaoeHitoshi KiyoiKeiko KawashimaHiromi AndoMotoki Miyama
    • Yoshihisa OhtaFumihiko KanaiShinji NaraYutaka KandaHiroshi UmeharaYukimasa ShiotsuTomoki NaoeHitoshi KiyoiKeiko KawashimaHiromi AndoMotoki Miyama
    • A61K31/416C07D231/56
    • C07D231/56
    • The present invention provides a compound represented by Formula (I): [wherein R1 represents CONR1aR1b (wherein R1a and R1b may be the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, substituted or unsubstituted aryl, substituted or unsubstituted ararkyl or a substituted or unsubstituted heterocyclic group, or R1a and R1b are combined together with the adjacent nitrogen atom thereto to form a substituted or unsubstituted heterocyclic group) or the like, R2 represents a hydrogen atom, CONR2aR2b (wherein R2a and R2b may be the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, substituted or unsubstituted aryl, substituted or unsubstituted ararkyl or a substituted or unsubstituted heterocyclic group, or R2a and R2b are combined together with the adjacent nitrogen atom thereto to form a substituted or unsubstituted heterocyclic group), NR2cR2d (wherein R2c and R2d may be the same or different and each represents a hydrogen atom, substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkanoyl, substituted or unsubstituted aroyl, substituted or unsubstituted heteroaroyl, substituted or unsubstituted ararkyl, substituted or unsubstituted lower alkylsulfonyl or substituted or unsubstituted lower arylsulfonyl) or the like].
    • 本发明提供由式(I)表示的化合物:[其中R1表示CONR1aR1b(其中R1a和R1b可以相同或不同,各自表示氢原子,取代或未取代的低级烷基,取代或未取代的芳基,取代或未取代的 芳烷基或取代或未取代的杂环基,或者R1a和R1b与相邻的氮原子一起形成取代或未取代的杂环基)等,R2表示氢原子,CONR2aR2b(其中R2a和R2b可以是 各自表示氢原子,取代或未取代的低级烷基,取代或未取代的芳基,取代或未取代的芳烷基或取代或未取代的杂环基,或R 2a和R 2b与相邻的氮原子一起形成取代基 或未取代的杂环基),NR2cR2d(其中R2c和R2d可以相同或不同 取代或未取代的杂芳酰基,取代或未取代的芳烷基,取代或未取代的低级烷基磺酰基或取代或未取代的低级芳基磺酰基)等,其中R 1代表氢原子,取代或未取代的低级烷基,取代或未取代的低级烷酰基,取代或未取代的芳酰基, 。