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1. 发明授权

US07785768B2 Thermoacid generator for antireflection film formation, composition for antireflection film formation, and antireflection film made therefrom 有权
标题翻译：用于防反射膜形成的热酸发生器，用于防反射膜形成的组合物和由其制成的抗反射膜
公开(公告)号：US07785768B2
公开(公告)日：2010-08-31
申请号：US11916575
申请日：2006-05-24
申请人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
发明人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
IPC分类号： G03F7/11 , H01L21/027
CPC分类号： G03F7/091
摘要： A thermoacid generator for antireflective film formation, characterized by being represented by the following formula (1): (wherein R1 represents C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); R2 represents linear, branched, or cyclic C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl, C6-20 aryl, or C7-12 aralkyl or aryloxoalkyl; R3 represents hydrogen or alkyl; and Y− represents a non-nucleophilic counter ion); a composition for forming an antireflective film; and an antireflective film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflective film can inhibit an overlying photoresist film from generating a scum.
摘要翻译：用于抗反射膜形成的热酸发生器，其特征在于由下式（1）表示：（其中R 1表示C 1-20烷基，烯基，氧代烷基或氧代烯基（这些基团中的氢原子可被氟原子取代）; R 2表示直链，支链或环状C 1-20烷基，烯基，氧代烷基或氧代烯基，C 6-20芳基或C 7-12芳烷基或芳氧基烷基; R 3表示氢或烷基; Y-表示非亲核抗衡离子） ; 用于形成抗反射膜的组合物; 和由该组合物制成的抗反射膜。利用热酸发生器和组合物，可获得令人满意的耐蚀刻性和令人满意的防止短波长光反射（能够吸收短波长光）的能力。此外，抗反射膜可以抑制上覆的光致抗蚀剂膜产生浮渣。

2. 发明申请

US20090130595A1 Thermoacid Generator for Antireflection Film Formation, Composition for Antireflection Film Formation, and Antireflection Film Made Therefrom 有权
标题翻译：用于防反射膜形成的热酸发生器，用于防反射膜形成的组合物和由此制成的抗反射膜
公开(公告)号：US20090130595A1
公开(公告)日：2009-05-21
申请号：US11916575
申请日：2006-05-24
申请人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
发明人： Daisuke Kawana , Yasushi Fujii , Hisanobu Harada , Naoki Yamashita
IPC分类号： G03F7/004 , C07C69/017
CPC分类号： G03F7/091
摘要： A thermoacid generator for antireflective film formation, characterized by being represented by the following formula (1): (wherein R1 represents C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); R2 represents linear, branched, or cyclic C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl, C6-20 aryl, or C7-12 aralkyl or aryloxoalkyl; R3 represents hydrogen or alkyl; and Y− represents a non-nucleophilic counter ion); a composition for forming an antireflective film; and an antireflective film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflective film can inhibit an overlying photoresist film from generating a scum.
摘要翻译：用于抗反射膜形成的热酸发生器，其特征在于由下式（1）表示：（其中R 1表示C 1-20烷基，烯基，氧代烷基或氧代烯基（这些基团中的氢原子可被氟原子取代）; R 2表示直链，支链或环状C 1-20烷基，烯基，氧代烷基或氧代烯基，C 6-20芳基或C 7-12芳烷基或芳氧基烷基; R 3表示氢或烷基; Y-表示非亲核抗衡离子） ; 用于形成抗反射膜的组合物; 和由该组合物制成的抗反射膜。利用热酸发生器和组合物，可获得令人满意的耐蚀刻性和令人满意的防止短波长光反射（能够吸收短波长光）的能力。此外，抗反射膜可以抑制上覆的光致抗蚀剂膜产生浮渣。

3. 发明申请

US20090220889A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN 有权
标题翻译：光敏树脂组合物和形成图案的方法
公开(公告)号：US20090220889A1
公开(公告)日：2009-09-03
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有作为猝灭剂的特定锍化合物代替含氮化合物。

4. 发明授权

US08216763B2 Photosensitive resin composition and method of forming pattern 有权
标题翻译：感光树脂组合物及其形成方法
公开(公告)号：US08216763B2
公开(公告)日：2012-07-10
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有特定的锍化合物代替含氮化合物作为猝灭剂。

5. 发明申请

US20060292488A1 Composition for formation of antireflection film, and antireflection film in which the same is used 审中-公开
标题翻译：用于形成防反射膜的组合物和使用其的抗反射膜
公开(公告)号：US20060292488A1
公开(公告)日：2006-12-28
申请号：US11446763
申请日：2006-06-05
申请人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
发明人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
IPC分类号： C08G77/26 , G03C1/00
CPC分类号： C08G77/20 , C08G77/14 , G03F7/0757 , G03F7/091
摘要： A composition for formation of an antireflection film having an excellent etching resistant characteristic and ability to prevent reflection of short-wavelength light (absorption ability of short-wavelength light) as well as excellent time dependent stability, and an antireflection film in which the same is used, are provided. A composition for formation of an antireflection film including a siloxane compound having a light-absorbing group and a crosslinking group, the siloxane compound being blocked with a capping group, is provided. By thus blocking the siloxane compound with a capping group, time dependent stability can be improved without deteriorating etching resistance, and ability to prevent reflection.
摘要翻译：用于形成具有优异的耐蚀刻特性和防止短波长光的反射（短波长光的吸收能力）以及优异的时间依赖稳定性的抗反射膜的组合物和其中相同的抗反射膜使用，提供。提供了一种用于形成包含具有光吸收基团和交联基团的硅氧烷化合物的抗反射膜的组合物，该硅氧烷化合物被封端基封端。通过这样用封端基封端硅氧烷化合物，可以提高时间依赖性的稳定性，而不会降低耐腐蚀性，防止反射的能力。

6. 发明申请

US20080312400A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND RESIST UNDERLAYER FILM 审中-公开
标题翻译：用于形成电阻膜的组合物和耐下漆膜
公开(公告)号：US20080312400A1
公开(公告)日：2008-12-18
申请号：US12137483
申请日：2008-06-11
申请人： Naoki YAMASHITA , Daisuke Kawana , Hisanobu Harada , Koji Yonemura
发明人： Naoki YAMASHITA , Daisuke Kawana , Hisanobu Harada , Koji Yonemura
IPC分类号： G03F7/004 , C08G77/28 , C08G77/04
CPC分类号： G03F7/091 , C08G77/28 , C08L83/08 , G03F7/0752
摘要： A composition for forming a resist underlayer film of the present invention is capable of forming a resist underlayer film which has a good matching property with a resist, by including a siloxane polymer component having a repeating unit which contains a monovalent organic group containing a sulfur atom. Thus, the composition of the resist layer film capable of forming a resist underlayer film which has a good matching property with a resist is realized.
摘要翻译：用于形成本发明的抗蚀剂下层膜的组合物能够通过包含具有含有含有硫原子的一价有机基团的重复单元的硅氧烷聚合物组分，形成与抗蚀剂具有良好匹配性的抗蚀剂下层膜。因此，实现了能够形成与抗蚀剂具有良好匹配性能的抗蚀剂下层膜的抗蚀剂层膜的组成。

7. 发明申请

US20060251986A1 Positive resist composition and method for forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20060251986A1
公开(公告)日：2006-11-09
申请号：US10540056
申请日：2003-12-18
申请人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
发明人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.
摘要翻译：一种正型抗蚀剂组合物，其包含在酸的作用下碱溶解度增加的酸解离溶解抑制基团和在曝光时产生酸的酸产生剂组分（B）的树脂组分（A），其中树脂组分（A）是共聚物包含衍生自羟基苯乙烯的第一结构单元（a1）和衍生自含有醇羟基的（甲基）丙烯酸酯的第二结构单元（a2），其中10摩尔％以上且25摩尔％以下的组合结构单元（a1）中的羟基和结构单元（a2）中的醇羟基的总数被酸解离溶解抑制基团保护，并且在用酸解离溶解抑制之前保护共聚物的重均分子量组别为2,000以上至8,500以下。

8. 发明申请

US20050221225A1 Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US20050221225A1
公开(公告)日：2005-10-06
申请号：US11091618
申请日：2005-03-28
申请人： Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Koki Tamura
发明人： Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Koki Tamura
IPC分类号： G03F7/039 , G03F7/004 , G03F7/075 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0757 , G03F7/0048 , Y10S430/106 , Y10S430/115 , Y10S430/12
摘要： A positive resist composition capable of forming a resist pattern having excellent shape is provided. This composition is a positive resist composition including a base resin component (A) and an acid generator component (B) generating an acid under exposure, which are dissolved in an organic solvent, wherein the base resin component (A) is a silicone resin, and the organic solvent contains propylene glycol monomethyl ether (x1) and a solvent (S2) having a boiling point higher than that of the propylene glycol monomethyl ether.
摘要翻译：提供能够形成具有优异形状的抗蚀剂图案的正性抗蚀剂组合物。该组合物是包含基质树脂组分（A）和产生暴露酸的酸产生剂组分（B）的正性抗蚀剂组合物，其溶解在有机溶剂中，其中基础树脂组分（A）是有机硅树脂，有机溶剂含有丙二醇单甲醚（x1）和沸点高于丙二醇单甲醚的溶剂（S2）。

9. 发明申请

US20100104973A1 COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：化合物，酸生成剂，抗蚀剂组合物和形成耐火图案的方法
公开(公告)号：US20100104973A1
公开(公告)日：2010-04-29
申请号：US12450060
申请日：2008-04-04
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
IPC分类号： G03F7/20 , C07C309/19 , G03F7/004
CPC分类号： C07D333/76 , C07C309/10 , C07C381/12 , C07C2603/74 , C07D209/86 , C07D295/104 , C07D307/20 , C07D307/93 , C07D307/94 , C07D493/08 , C07D493/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below: R2—CH2—O—Y1—SO3−A+ (b1-12) wherein R2 represents a monovalent aromatic organic group; Y1 represents an alkylene group of 1 to 4 carbon atoms which may be fluorinated; and A+ represents a cation.
摘要翻译：提供优选作为抗蚀剂组合物的酸发生剂的化合物，包含该化合物的酸产生剂，含有酸产生剂的抗蚀剂组合物以及使用该抗蚀剂组合物形成抗蚀剂图案的方法，该化合物由通式式（b1-12）表示：R2-CH2-O-Y1-SO3-A +（b1-12）其中R2表示一价芳族有机基团; Y1表示可被氟化的1〜4个碳原子的亚烷基; 而A +代表阳离子。

10. 发明授权

US07666569B2 Positive resist composition and method for forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07666569B2
公开(公告)日：2010-02-23
申请号：US10540056
申请日：2003-12-18
申请人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
发明人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.
摘要翻译：一种正型抗蚀剂组合物，其包含在酸的作用下碱溶解度增加的酸解离溶解抑制基团和在曝光时产生酸的酸产生剂组分（B）的树脂组分（A），其中树脂组分（A）是共聚物包含衍生自羟基苯乙烯的第一结构单元（a1）和衍生自含有醇羟基的（甲基）丙烯酸酯的第二结构单元（a2），其中10摩尔％以上且25摩尔％以下的组合结构单元（a1）中的羟基和结构单元（a2）中的醇羟基的总数被酸解离溶解抑制基团保护，并且在用酸解离溶解抑制之前保护共聚物的重均分子量组别为2,000以上至8,500以下。

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