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1. 发明授权

US08216763B2 Photosensitive resin composition and method of forming pattern 有权
标题翻译：感光树脂组合物及其形成方法
公开(公告)号：US08216763B2
公开(公告)日：2012-07-10
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有特定的锍化合物代替含氮化合物作为猝灭剂。

2. 发明申请

US20090220889A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN 有权
标题翻译：光敏树脂组合物和形成图案的方法
公开(公告)号：US20090220889A1
公开(公告)日：2009-09-03
申请号：US12092701
申请日：2006-10-10
申请人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
发明人： Kazufumi Sato , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Tomotaka Yamada , Toshikazu Takayama
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0757
摘要： A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.
摘要翻译：具有淬火功能和令人满意的长期稳定性的感光性树脂组合物，特别是可以防止由于储存期间随着时间的变化而引起的敏感性异常（从给定的灵敏度变化）; 以及从组合物形成图案的方法。抗蚀剂组合物含有作为主要成分的含有硅氧烷或倍半硅氧烷聚合物等的含硅聚合物的基础树脂，该组合物含有作为猝灭剂的特定锍化合物代替含氮化合物。

3. 发明申请

US20060292488A1 Composition for formation of antireflection film, and antireflection film in which the same is used 审中-公开
标题翻译：用于形成防反射膜的组合物和使用其的抗反射膜
公开(公告)号：US20060292488A1
公开(公告)日：2006-12-28
申请号：US11446763
申请日：2006-06-05
申请人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
发明人： Toshikazu Takayama , Yasushi Fujii , Hisanobu Harada , Koji Yonemura , Isamu Takagi , Daisuke Kawana , Kazufumi Sato
IPC分类号： C08G77/26 , G03C1/00
CPC分类号： C08G77/20 , C08G77/14 , G03F7/0757 , G03F7/091
摘要： A composition for formation of an antireflection film having an excellent etching resistant characteristic and ability to prevent reflection of short-wavelength light (absorption ability of short-wavelength light) as well as excellent time dependent stability, and an antireflection film in which the same is used, are provided. A composition for formation of an antireflection film including a siloxane compound having a light-absorbing group and a crosslinking group, the siloxane compound being blocked with a capping group, is provided. By thus blocking the siloxane compound with a capping group, time dependent stability can be improved without deteriorating etching resistance, and ability to prevent reflection.
摘要翻译：用于形成具有优异的耐蚀刻特性和防止短波长光的反射（短波长光的吸收能力）以及优异的时间依赖稳定性的抗反射膜的组合物和其中相同的抗反射膜使用，提供。提供了一种用于形成包含具有光吸收基团和交联基团的硅氧烷化合物的抗反射膜的组合物，该硅氧烷化合物被封端基封端。通过这样用封端基封端硅氧烷化合物，可以提高时间依赖性的稳定性，而不会降低耐腐蚀性，防止反射的能力。

4. 发明授权

US07666569B2 Positive resist composition and method for forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07666569B2
公开(公告)日：2010-02-23
申请号：US10540056
申请日：2003-12-18
申请人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
发明人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.
摘要翻译：一种正型抗蚀剂组合物，其包含在酸的作用下碱溶解度增加的酸解离溶解抑制基团和在曝光时产生酸的酸产生剂组分（B）的树脂组分（A），其中树脂组分（A）是共聚物包含衍生自羟基苯乙烯的第一结构单元（a1）和衍生自含有醇羟基的（甲基）丙烯酸酯的第二结构单元（a2），其中10摩尔％以上且25摩尔％以下的组合结构单元（a1）中的羟基和结构单元（a2）中的醇羟基的总数被酸解离溶解抑制基团保护，并且在用酸解离溶解抑制之前保护共聚物的重均分子量组别为2,000以上至8,500以下。

5. 发明申请

US20090311625A1 Method for forming photoresist pattern and photoresist laminate 审中-公开
标题翻译：形成光致抗蚀剂图案和光致抗蚀剂层压板的方法
公开(公告)号：US20090311625A1
公开(公告)日：2009-12-17
申请号：US12461807
申请日：2009-08-25
申请人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
发明人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091
摘要： A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
摘要翻译：用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度化合物在抗反射膜中。

6. 发明申请

US20070281098A1 Composition for forming antireflection coating 审中-公开
标题翻译：用于形成抗反射涂层的组合物
公开(公告)号：US20070281098A1
公开(公告)日：2007-12-06
申请号：US11882254
申请日：2007-07-31
申请人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
发明人： Taku Hirayama , Tomotaka Yamada , Daisuke Kawana , Kouki Tamura , Kazufumi Sato
IPC分类号： B05D3/00
CPC分类号： C08G77/14 , C08G77/04 , C08G77/70 , C09D5/32 , C09D183/04 , C09D183/06 , G02B1/111 , G03F7/0757 , G03F7/091 , C08L2666/04
摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.
摘要翻译：一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基）倍半硅氧烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元，（B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于0.002至约0.002的范围的ArF激光显示可选参数（k值）的抗反射涂层 0.95。该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

7. 发明授权

US06787290B2 Positive-working photoresist composition and resist patterning method using same 有权
标题翻译：正性光致抗蚀剂组合物和使用其的抗蚀剂图案化方法
公开(公告)号：US06787290B2
公开(公告)日：2004-09-07
申请号：US09928430
申请日：2001-08-14
申请人： Kazuyuki Nitta , Kazufumi Sato , Daisuke Kawana , Satoshi Shimatani
发明人： Kazuyuki Nitta , Kazufumi Sato , Daisuke Kawana , Satoshi Shimatani
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/115
摘要： The invention discloses a crosslinked chemical-amplification positive-working photoresist composition of good pattern resolution and storage stability, which is suitable for pattern size diminution by the thermal flow process after development. The composition comprises: (A) a polyhydroxystyrene resin substituted for a part of the hydroxyl hydrogen atoms by acid-dissociable solubility-reducing groups; (B) a radiation-sensitive acid-generating compound; (C) a polyvinyl ether compound as a crosslinking agent; (D) a carboxylic acid; and (E) an amine compound.
摘要翻译：本发明公开了一种具有良好的图案分辨率和储存稳定性的交联化学增幅正性光致抗蚀剂组合物，适用于显影后热流程图形尺寸的减小。该组合物包含：（A）通过酸解离的溶解性降低基团取代部分羟基氢原子的多羟基苯乙烯树脂; （B）辐射敏感的产酸化合物; （C）作为交联剂的聚乙烯醚化合物; （D）羧酸; 和（E）胺化合物。

8. 发明申请

US20060251986A1 Positive resist composition and method for forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20060251986A1
公开(公告)日：2006-11-09
申请号：US10540056
申请日：2003-12-18
申请人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
发明人： Kazufumi Sato , Mitsuo Hagihara , Daisuke Kawana
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.
摘要翻译：一种正型抗蚀剂组合物，其包含在酸的作用下碱溶解度增加的酸解离溶解抑制基团和在曝光时产生酸的酸产生剂组分（B）的树脂组分（A），其中树脂组分（A）是共聚物包含衍生自羟基苯乙烯的第一结构单元（a1）和衍生自含有醇羟基的（甲基）丙烯酸酯的第二结构单元（a2），其中10摩尔％以上且25摩尔％以下的组合结构单元（a1）中的羟基和结构单元（a2）中的醇羟基的总数被酸解离溶解抑制基团保护，并且在用酸解离溶解抑制之前保护共聚物的重均分子量组别为2,000以上至8,500以下。

9. 发明申请

US20080227027A1 Method for forming photoresist pattern and photoresist laminate 审中-公开
标题翻译：形成光致抗蚀剂图案和光致抗蚀剂层压板的方法
公开(公告)号：US20080227027A1
公开(公告)日：2008-09-18
申请号：US12081463
申请日：2008-04-16
申请人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
发明人： Akiyoshi Yamazaki , Naoto Motoike , Daisuke Kawana , Kazufumi Sato
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091
摘要： A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.
摘要翻译：用于形成光致抗蚀剂图案的方法包括以下步骤：在基底上沉积光致抗蚀剂膜，光致抗蚀剂膜含有能够在暴露于光时产生酸的酸产生剂; 在抗蚀剂膜上覆盖抗反射膜，所述抗反射膜含有氟基酸性化合物; 选择性地曝光光致抗蚀剂; 并显影光致抗蚀剂。该新方法的特征在于，选择酸产生剂和氟基酸性化合物，使得在曝光后光致抗蚀剂膜中产生酸的酸具有比氟酸酸性更高的酸度化合物在抗反射膜中。

10. 发明申请

US20070009828A1 Positive resist composition, resist laminates and process for forming resist patterns 审中-公开
标题翻译：正抗蚀剂组合物，抗蚀剂层压体和形成抗蚀剂图案的方法
公开(公告)号：US20070009828A1
公开(公告)日：2007-01-11
申请号：US10560126
申请日：2004-06-11
申请人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
发明人： Koki Tamura , Daisuke Kawana , Tomotaka Yamada , Takayuki Hosono , Taku Hirayama , Kazufumi Sato , Hiroshi Shimbori , Tomoyuki Ando
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , G03F7/0045
摘要： A positive resist composition, comprising a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) includes either a silsesquioxane resin (A1) containing structural units (a1) represented by a general formula (I) shown below, structural units (a2) represented by a general formula (II) shown below, and structural units (a3) represented by a general formula (III) shown below, or a silsesquioxane resin (A2) containing structural units (al) represented by the general formula (I) shown below, and structural units (a2′) represented by a general formula (II′) shown below. In the general formulas below, R1 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R2 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R3 represents an acid dissociable, dissolution inhibiting group, R6 represents an alkyl group of 1 to 5 carbon atoms, R7 represents either an alkyl group of 1 to 5 carbon atoms or a hydrogen atom, and R8 represents an alicyclic hydrocarbon group of 5 to 15 carbon atoms.
摘要翻译：含有在酸作用下表现出增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括倍半硅氧烷树脂（A1）），由下述通式（I）表示的结构单元（a1），由下述通式（II）表示的结构单元（a2）和由以下所示的通式（III）表示的结构单元（a3），或含有下述通式（I）表示的结构单元（a1）的倍半硅氧烷树脂（A2）和由下述通式（II'）表示的结构单元（a2'）。在下列通式中，R 1表示1至5个碳原子的直链或支链亚烷基，R 2表示直链或支链的亚烷基， 1至5个碳原子，R 3表示酸解离的溶解抑制基团，R 6表示1至5个碳原子的烷基，R 7， / SUP>表示1〜5个碳原子的烷基或氢原子，R 8表示5〜15个碳原子的脂环族烃基。

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