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1. 发明专利

JP2004079859A High-pressure treatment apparatus 有权
公开(公告)号：JP2004079859A
公开(公告)日：2004-03-11
申请号：JP2002239828
申请日：2002-08-20
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： WATANABE KATSUMITSU , SARUMARU SHIYOUGO , SAKASHITA YOSHIHIKO , KIYOSE HIROMI , IWATA TOMOMI , SAITO KIMITSUGU , MURAOKA YUSUKE
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure treatment apparatus which is capable of increasing its inner pressure at a higher rise rate of pressure without causing damage to a work, shortening a treating time, ensuring a uniform treatment for the work, and reduced in volume.
SOLUTION: The high-pressure treatment apparatus is equipped with a high-pressure vessel 1 housing a plurality of the works 6 and a feed unit feeding a treating fluid to the high-pressure vessel 1. A step-up inlet 10 for feeding the treating fluid into the high-pressure vessel 1 to increase its internal pressure and a treatment inlet 11 for feeding the treating fluid to a plurality of the works 6 are separately provided to the feed unit, a holding means 7 holding the works separately is provided inside the high-pressure vessel 1, and the treatment inlet 11 is provided to the holding means 7.
COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2005142301A High-pressure processing method and apparatus thereof 审中-公开
标题翻译：高压加工方法及其设备
公开(公告)号：JP2005142301A
公开(公告)日：2005-06-02
申请号：JP2003376032
申请日：2003-11-05
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： SAKASHITA YOSHIHIKO , KANDA TAKESHI , ISHII TAKAHIKO , KIYOSE HIROMI , MURAOKA YUSUKE , IWATA TOMOMI , MIZOBATA IKUO
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure processing method and an apparatus for enabling supply of the high cleanliness, high-pressure fluid.
SOLUTION: In the high-pressure processing method for conducting high-pressure process on a processing object within a high-pressure processing chamber through contact with the high-pressure fluid under the pressurized condition, the high-pressure fluid is guided into the high-pressure processing chamber after filtering thereof. The high-pressure processing apparatus comprises a high-pressure processing chamber, a high-pressure fluid supply means for supplying the high-pressure fluid to the high-pressure processing chamber, and a high-pressure fluid filtering means. Further, the apparatus comprises a structure for adding to the high pressure fluid, one or more chemical solutions other than the high-pressure fluid supplied, from the high-pressure fluid supplying means.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供高压处理方法和能够供应高洁净度的高压流体的装置。解决方案：在高压处理室内，通过在加压状态下与高压流体接触而对高压处理室内的加工对象进行高压处理的高压处理方法中，将高压流体引导到过滤后的高压处理室。高压处理装置包括高压处理室，用于向高压处理室供给高压流体的高压流体供给装置和高压流体过滤装置。此外，该装置包括从高压流体供给装置向高压流体添加除了供给的高压流体以外的一种以上的化学溶液的结构。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2007250806A Substrate treatment equipment 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2007250806A
公开(公告)日：2007-09-27
申请号：JP2006071910
申请日：2006-03-16
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KIYOSE HIROMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To realize the proper carrying of a substrate while reducing a damage on a substrate surface, and ensuring a washing performance to the substrate surface.
SOLUTION: Substrate treatment equipment washes the surfaces of the substrates B during the carrying in a washing chamber 2 while being brought into contact with the surfaces of the substrates B. The substrate treatment equipment has a solid-like washing member 234 composed of a long-sized elastic material in the crossed direction with the carrying direction of the substrates B. In the washing member 234, at least the substrate penetrating side in the sectional shape of a front end section brought into contact with the surfaces of the substrates B is formed in an arcuate shape.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了实现基板的适当携带，同时减少对基板表面的损伤，并确保对基板表面的洗涤性能。解决方案：基材处理设备在与洗涤室2携带的同时在与基板B的表面接触的同时洗涤基板B的表面。基板处理设备具有固体状洗涤部件234，其由与基板B的输送方向交叉的长尺寸弹性材料。在洗涤部件234中，至少前端部的截面形状的基板贯通侧与基板B的表面接触形成为弓形。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007140394A Processing method 审中-公开
标题翻译：处理方法
公开(公告)号：JP2007140394A
公开(公告)日：2007-06-07
申请号：JP2005337478
申请日：2005-11-22
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KIYOSE HIROMI
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To preferably strip a resist or a resist residue depositing on a substrate without damaging the substrate. SOLUTION: A first stripping composition containing an amine compound, hydrogen fluoride, a carbonate and a polar organic solvent, as a first chemical liquid for stripping the resist or the like, is mixed with a SCF (supercritical fluid) to prepare a first process fluid, and the first process fluid is supplied to a process chamber (step S4). Successively, a second stripping composition containing methanol, as a second chemical liquid for stripping the resist or the like, is mixed with the SCF to prepare a second process fluid, and the second process fluid is supplied to the process chamber (step S7). The process fluid (SCF+first and second chemical liquids) is brought into contact with the substrate surface in the process chamber to strip and remove the resist or the like from the substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：优选剥离沉积在基板上的抗蚀剂或抗蚀剂残留物而不损坏基板。解决方案：将含有胺化合物，氟化氢，碳酸盐和极性有机溶剂作为用于剥离抗蚀剂等的第一化学液体的第一剥离组合物与SCF（超临界流体）混合以制备第一工艺流体，并将第一工艺流体供应到处理室（步骤S4）。接着，将含有甲醇作为剥离抗蚀剂等的第二化学液体的第二剥离组合物与SCF混合以制备第二工艺流体，并将第二工艺流体供应到处理室（步骤S7）。使工艺流体（SCF +第一和第二化学液体）与处理室中的衬底表面接触以从衬底剥离和去除抗蚀剂等。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2008103678A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2008103678A
公开(公告)日：2008-05-01
申请号：JP2007194335
申请日：2007-07-26
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KIYOSE HIROMI , KOBAYASHI TERUYUKI
IPC分类号： H01L21/306
CPC分类号： H01L21/31111 , H01L21/67086 , H01L21/67253
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of keeping an etching rate of a silicon nitride film formed on a substrate constant.
SOLUTION: A phosphoric acid solution stored in an immersion processing bath 10 is circulated through a circulation line 20. A substrate W on which a silicon oxide film and a silicon nitride film are formed is immersed into the phosphoric acid solution in the immersion processing bath 10 to proceed a process of selectively etching the silicon nitride film. A recovery line 30 draws part of the phosphoric acid solution circulating through the circulation line 20, and collects and discharges siloxane with a recovery apparatus 31 to recover the phosphoric acid solution. A controller 40 controls a flow rate regulating valve 33 on the basis of measurement results of an outlet concentration meter 24 and an inlet concentration meter 32 to regulate the flow rate of the phosphoric acid solution to be circulated to the immersion processing bath 10 so that the concentration of siloxane contained in the phosphoric acid solution stored in the immersion processing bath 10 should be constant.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够保持在衬底上形成的氮化硅膜的蚀刻速率恒定的衬底处理设备。溶液：将存储在浸渍处理槽10中的磷酸溶液循环通过循环管线20.将形成有氧化硅膜和氮化硅膜的基板W浸入磷酸溶液中处理槽10进行选择性蚀刻氮化硅膜的工序。回收管线30将通过循环管线20循环的一部分磷酸溶液抽出，并用回收装置31收集并排出硅氧烷以回收磷酸溶液。控制器40基于出口浓度计24和入口浓度计32的测量结果控制流量调节阀33，以调节要循环到浸没处理槽10中的磷酸溶液的流量，存储在浸渍处理槽10中的磷酸溶液中所含的硅氧烷的浓度应该是恒定的。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007226004A Process method and composition for stripping 有权
标题翻译：用于剥离的方法和组合物
公开(公告)号：JP2007226004A
公开(公告)日：2007-09-06
申请号：JP2006048417
申请日：2006-02-24
申请人： Dainippon Screen Mfg Co Ltd , Tosoh Corp , 大日本スクリーン製造株式会社 , 東ソー株式会社
发明人： KIYOSE HIROMI , SAITO KIMITSUGU , HARA YASUSHI , TAKAHASHI FUMIHARU , SHIMONO TETSUSUU
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To preferably strip a resist or a resist residue depositing on a substrate, without damaging the substrate. SOLUTION: A process fluid is prepared as a chemical liquid to strip the resist or the like, by mixing a composition for stripping containing an amine compound and TMAF (tetramethylammonium fluoride) with pure water and SCF (supercritical fluid); the processing fluid is supplied to a processing chamber (step S4); and, as a result, the processing fluid (SCF+chemical+pure water) is brought into contact with the substrate surface in the process chamber to strip, and the resist or the like is removed from the substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：优选剥离沉积在基底上的抗蚀剂或抗蚀剂残留物，而不损坏基底。解决方案：通过将含有胺化合物和TMAF（四甲基氟化铵）的汽提组合物与纯水和SCF（超临界流体）混合，将制备流体制备为化学液体以剥离抗蚀剂等。将处理流体供给到处理室（步骤S4）。结果，处理液（SCF +化学品+纯水）与处理室中的基板表面接触以剥离，并且从基板去除抗蚀剂等。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2009206419A Substrate processing apparatus and substrate processing method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2009206419A
公开(公告)日：2009-09-10
申请号：JP2008049755
申请日：2008-02-29
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KIYOSE HIROMI
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of keeping etching characteristics of an aqueous phosphoric acid solution fixed for a long period of time.
SOLUTION: Additives containing a hexafluorosilicic acid solution (H
2 SiF
6 +H
2 O) are sequentially charged into the aqueous phosphoric acid solution reserved in an immersion processing tank 10 from an additive charging mechanism 40. Through the sequential charging of the additives, F
- promoting etching of a silicon nitride film is appropriately replenished. When concentration of siloxane produced through hydrolysis reaction of the additives is larger than a set value, on the other hand, the aqueous phosphoric acid solution is made to flow in a reproduction line 30 from a circulation line 20. A reproduction device 31 forcibly recovers siloxane from the aqueous phosphoric acid solution which has flowed into the reproduction line 30. Consequently, an increase in the concentration of the siloxane in the aqueous phosphoric acid solution is suppressed to maintain an initial etching rate for both the silicon nitride film and a silicon oxide film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够使磷酸水溶液的蚀刻特性长时间固定的基板处理装置。
溶液：将含有六氟硅酸溶液（H 2 SBB）的添加剂依次加入磷酸水溶液溶液在浸渍处理槽10中从添加剂充电机构40保留。通过顺序加入添加剂，适当补充促进氮化硅膜蚀刻的添加剂。当通过添加剂的水解反应产生的硅氧烷的浓度大于设定值时，另一方面，使磷酸水溶液从循环管线20在再生线30中流动。再现装置31强制回收硅氧烷从已经流入再生线30的磷酸水溶液中抑制磷酸水溶液中的硅氧烷浓度的增加，以保持氮化硅膜和氧化硅膜的初始蚀刻速率。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009094455A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2009094455A
公开(公告)日：2009-04-30
申请号：JP2008073396
申请日：2008-03-21
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KIYOSE HIROMI
IPC分类号： H01L21/306 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus maintaining the etching characteristics of a phosphoric acid solution for a long period of time.
SOLUTION: An additive containing a hexafluorosilicic acid solution (H
2 SiF
6 +H
2 O) is sequentially charged into a phosphoric acid solution pooled in an immersion bath 10 from an additive input mechanism 30. Also, a trap agent containing a fluoroboric acid solution (HBF
4 +H
2 O) is charged into the phosphoric acid solution from a trap agent input mechanism 40. F- which accelerates etching of a silicon nitride film is added as appropriate by sequentially charging the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种保持磷酸溶液的蚀刻特性长时间的基板处理装置。解决方案：将含有六氟硅酸溶液（H 2 SBS + H SB 2 O）的添加剂依次加入到磷酸将溶液从添加剂输入机构30汇集在浸浴10中。另外，将含有氟硼酸溶液（HBF 4 SBB + H 2 SBO 2）的捕集剂装入来自捕集剂输入机构40的磷酸溶液。通过依次加入添加剂并适当地加入氮化硅膜蚀刻的F-。通过顺序输入增加的硅氧烷用氟硼酸分解产生的氢氟酸进行蚀刻，从而抑制硅氧烷浓度的显着增加。这使得可以保持氮化硅膜和氧化硅膜的各自的初始蚀刻速率。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008004716A High-pressure treatment method 审中-公开
标题翻译：高压处理方法
公开(公告)号：JP2008004716A
公开(公告)日：2008-01-10
申请号：JP2006172079
申请日：2006-06-22
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SAITO KIMITSUGU , KIYOSE HIROMI
IPC分类号： H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure treatment method capable of selectively removing a doped glass layer in the doped glass layer and an oxide layer formed on a substrate excellently by an etching.
SOLUTION: SCC02 is supplied with a washing composition composed of a washing component consisting of hydrogen fluoride (HF) and ammonium fluoride (NH
4 F), methanol (a first solvent) and pure water; and a treatment fluid is prepared. A treatment chamber is supplied with the treatment fluid. Consequently, the washing component (HF+NH
4 F) is brought into contact with the substrate in a relative dielectric-constant environment corresponding to the relative dielectric constant of methanol, and an etching removal is conducted in the treatment chamber (a first washing process). The inside of the treatment chamber is prepared to the relative dielectric-constant environment corresponding to methanol (a second solvent) because the treatment chamber is supplied with the treatment fluid mixing an environment conditioner containing methanol with SCC02, even in a second washing process in succession to the first washing process.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够通过蚀刻优异地选择性地除去掺杂玻璃层中的掺杂玻璃层和形成在基板上的氧化物层的高压处理方法。 SCC02被供给由由氟化氢（HF）和氟化铵（NH 4 SBB）组成的洗涤组分，甲醇（第一溶剂）和纯水组成的洗涤组合物; 并制备处理液。给处理室供应处理液。因此，在对应于甲醇的相对介电常数的相对介电常数环境中，洗涤组分（HF + NH 4 SB 4）与衬底接触，并且在处理室（第一洗涤过程）。处理室的内部被制备成对应于甲醇（第二溶剂）的相对介电常数环境，因为即使在连续的第二次洗涤过程中，处理室被供给含有甲醇的环境调节剂与SCC02的处理流体到第一次洗涤过程。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007234862A Apparatus and method for high pressure process 审中-公开
标题翻译：高压过程的装置和方法
公开(公告)号：JP2007234862A
公开(公告)日：2007-09-13
申请号：JP2006054693
申请日：2006-03-01
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SAITO KIMITSUGU , KIYOSE HIROMI , MURAOKA YUSUKE
IPC分类号： H01L21/304 , G03F7/42 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent particles from being discharged to a secondary side of a filter. SOLUTION: After execution of surface processing, a pressure adjusting valve VC and a first valve V1 are closed while a second valve V2 is opened. Consequently, SCF remaining in a pressure container 10 counterflows through a supply pipe line P1 to a secondary side of a filter F1 via a valve VB in front of the container; and is discharged from a primary side of the filter F1 through a branch point B1, a branch pipe line P3, and a second valve V2 to the outside of the apparatus. Particles stored on the primary side of the filter F1 are removed during the execution of the surface processing. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止颗粒排放到过滤器的二次侧。解决方案：在执行表面处理之后，在第二阀V2打开的同时关闭压力调节阀VC和第一阀V1。因此，残留在压力容器10中的SCF经由供给管线P1经由容器前方的阀VB逆流到过滤器F1的二次侧，并且通过分支点B1，分支管线P3和第二阀V2从过滤器F1的初级侧排出到设备的外部。在执行表面处理期间，除去存储在过滤器F1的一次侧的颗粒。版权所有（C）2007，JPO＆INPIT

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