专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2007226004A Process method and composition for stripping 有权
标题翻译：用于剥离的方法和组合物
公开(公告)号：JP2007226004A
公开(公告)日：2007-09-06
申请号：JP2006048417
申请日：2006-02-24
申请人： Dainippon Screen Mfg Co Ltd , Tosoh Corp , 大日本スクリーン製造株式会社 , 東ソー株式会社
发明人： KIYOSE HIROMI , SAITO KIMITSUGU , HARA YASUSHI , TAKAHASHI FUMIHARU , SHIMONO TETSUSUU
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To preferably strip a resist or a resist residue depositing on a substrate, without damaging the substrate. SOLUTION: A process fluid is prepared as a chemical liquid to strip the resist or the like, by mixing a composition for stripping containing an amine compound and TMAF (tetramethylammonium fluoride) with pure water and SCF (supercritical fluid); the processing fluid is supplied to a processing chamber (step S4); and, as a result, the processing fluid (SCF+chemical+pure water) is brought into contact with the substrate surface in the process chamber to strip, and the resist or the like is removed from the substrate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：优选剥离沉积在基底上的抗蚀剂或抗蚀剂残留物，而不损坏基底。解决方案：通过将含有胺化合物和TMAF（四甲基氟化铵）的汽提组合物与纯水和SCF（超临界流体）混合，将制备流体制备为化学液体以剥离抗蚀剂等。将处理流体供给到处理室（步骤S4）。结果，处理液（SCF +化学品+纯水）与处理室中的基板表面接触以剥离，并且从基板去除抗蚀剂等。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2007311411A Method of cleaning inside of cleaning apparatus 审中-公开
标题翻译：清洁装置内部清洗方法
公开(公告)号：JP2007311411A
公开(公告)日：2007-11-29
申请号：JP2006136617
申请日：2006-05-16
申请人： Dainippon Screen Mfg Co Ltd , Tosoh Corp , 大日本スクリーン製造株式会社 , 東ソー株式会社
发明人： SAITO KIMITSUGU , IWATA TOMOMI , MIZOBATA IKUO , SHIMONO TETSUSUU , HARA YASUSHI , TAKAHASHI FUMIHARU
IPC分类号： H01L21/304 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning the inside of an apparatus which is contaminated by a composition for peeling that is used in combination with a high-pressure fluid such as a supercritical fluid when peeling resist or the like. SOLUTION: When cleaning amines and fluorides adhered to the inside of an apparatus for cleaning a high-pressure fluid, a cleaning liquid comprised of sulphuric acid, organic solvent and suprecritical carbon dioxide is used for cleaning the inside of the apparatus. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在剥离抗蚀剂等时，与被超临界流体等高压流体组合使用的被剥离用组合物污染的装置的内部进行清洗的方法。解决方案：当清洁附着在用于清洗高压流体的设备内部的胺和氟化物时，使用由硫酸，有机溶剂和超临界二氧化碳组成的清洗液来清洁设备内部。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006085126A Stripping agent and stripping method using same 审中-公开
标题翻译：剥离剂和使用它的剥离方法
公开(公告)号：JP2006085126A
公开(公告)日：2006-03-30
申请号：JP2005014408
申请日：2005-01-21
申请人： Dainippon Screen Mfg Co Ltd , Tosoh Corp , 大日本スクリーン製造株式会社 , 東ソー株式会社
发明人： HARA YASUSHI , TAKAHASHI FUMIHARU , HAYASHI HIROAKI , IWATA TOMOMI , MURAOKA YUSUKE , SAITO KIMITSUGU
IPC分类号： G03F7/42 , B08B3/08 , B08B7/00 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a stripping composition for completely stripping a resist without leaving a residue on stripping a resist or the like by using a high pressure fluid such as a supercritical fluid.
SOLUTION: A stripping composition containing an amine compound expressed by general formula (1) and/or general formula (2) is used together with a high pressure fluid. In the formulae, each of A and B independently represents O and/or NH, NR, wherein R represents a 1-4C alkyl group, hydroxyl ethyl group, amino propyl group or cyano ethyl group; X represents O or NMe; and Y represents OH or NMe, wherein Me represents a methyl group. The stripping composition may further contain a fluoride or a carbonate.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种汽提组合物，用于通过使用诸如超临界流体的高压流体汽提抗蚀剂等而完全剥离抗蚀剂而不留下残留物。解决方案：含有由通式（1）和/或通式（2）表示的胺化合物的汽提组合物与高压流体一起使用。在该式中，A和B各自独立地表示O和/或NH，NR，其中R代表1-4C烷基，羟基乙基，氨基丙基或氰基乙基; X表示O或NMe; Y表示OH或NMe，其中Me表示甲基。汽提组合物还可以含有氟化物或碳酸盐。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2010222646A Nanoparticle deposition apparatus 审中-公开
标题翻译：纳米颗粒沉积装置
公开(公告)号：JP2010222646A
公开(公告)日：2010-10-07
申请号：JP2009071764
申请日：2009-03-24
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： FURUICHI TAKATSUGU , SAITO KIMITSUGU
IPC分类号： C23C24/04 , B01J23/75 , B01J37/02 , C01B31/02 , C23C26/00
摘要： PROBLEM TO BE SOLVED: To provide a nanoparticle deposition apparatus capable of depositing nanoparticles with a high throughput and aligning flight directions of the nanoparticles. SOLUTION: In a vacuum chamber 10, a K cell 40 is arranged just below a substrate W retained by a substrate retention part 30. Cobalt as starting material of the nanoparticle is fed into a crucible 41 of the K cell 40. An opening part of the crucible 41 is covered with a gas-ejecting fixture 50 to form a vapor-generating space 45. A plurality of ejection holes 56 each having an aspect ratio of 10 or more are perforated through a gas-ejecting plate 52 disposed on the upper end of the gas-ejecting fixture 50. When helium gas is supplied through a gas supply part 60 to a vapor generation space 45 in which the crucible 41 is heated and the vapor of cobalt is generated, the nanoparticles of cobalt are generated. The nanoparticles pass through the ejection holes 56 each having an aspect ratio of 10 or more and, thereby, the flight directions of the nanoparticles are aligned into the same direction. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高通量和纳米颗粒的飞行方向对准地沉积纳米颗粒的纳米颗粒沉积设备。解决方案：在真空室10中，K单元40布置在由基板保持部分30保留的基板W的正下方。作为纳米颗粒的起始材料的钴进料到K单元40的坩埚41中。坩埚41的开口部分被气体喷射固定装置50覆盖以形成蒸气产生空间45.多个排放孔56的纵横比为10以上，通过设置在气体喷射固定装置50的上端。当通过气体供给部60将氦气供给到坩埚41被加热并产生钴的蒸汽的蒸气产生空间45时，产生钴的纳米颗粒。纳米粒子通过各自具有10以上的纵横比的喷射孔56，从而使纳米颗粒的飞行方向对齐成相同的方向。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2008066495A High-pressure processing apparatus, and high-pressure processing method 审中-公开
标题翻译：高压加工设备和高压加工方法
公开(公告)号：JP2008066495A
公开(公告)日：2008-03-21
申请号：JP2006242281
申请日：2006-09-07
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SAITO KIMITSUGU
IPC分类号： H01L21/027 , B01D29/00 , B01D29/60 , B01D29/62 , B01J3/00 , B01J3/02 , B08B7/00 , G02F1/1333 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To fully derive the particle trapping performance with a filter.
SOLUTION: The temperature of SCCO
2 passing a filter FF prepared in a high pressure piping 26 is raised by a temperature controller TC1 to a filtration temperature T2 higher than a processing temperature T1. Then, the temperature of the SCCO
2 is reduced to the processing temperature T1 by the temperature controller TC2, and it is supplied to a processing chamber.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：用过滤器完全获得颗粒捕集性能。解决方案：通过在高压管道26中制备的过滤器FF的SCCO 2 的温度由温度控制器TC1升高到高于处理温度T1的过滤温度T2。然后，通过温度控制器TC2将SCCO 2 的温度降低到处理温度T1，并将其提供给处理室。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007175559A High pressure treatment apparatus and high pressure treatment method 审中-公开
标题翻译：高压处理设备和高压处理方法
公开(公告)号：JP2007175559A
公开(公告)日：2007-07-12
申请号：JP2005373845
申请日：2005-12-27
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SAITO KIMITSUGU
IPC分类号： B08B3/04 , B01J3/00 , B01J3/02 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high pressure treatment apparatus capable of feeding a high pressure fluid with a high cleanliness to a treatment chamber by preventing a delivery of an unrequired substance captured by a filtration means arranged at a primary side of a treatment chamber to the high pressure fluid, and a high pressure treatment method.
SOLUTION: The high pressure treatment apparatus is provided with a main conduit 26 for communicating a high pressure fluid feed unit 2 with a pressure vessel 1 through a filter 24 to lead SCF (high pressure fluid) to the pressure vessel 1; and an opening/closing valve V2 and an opening/closing valve V4 fastened to the main conduit 26 and provided on a primary side and a secondary side of the filter 24 so as to clamp the filter 24. When a cleaning treatment is performed, the opening/closing valves V2, V4 are made in the opened state and the SCF is fed from a high pressure fluid feed unit 2 into the pressure vessel 1. Whereas, when a cleaning treatment is not performed, the opening/closing valves V2, V4 are made in the closed state and the SCF is closed/sealed between the opening/closing valve V2 and the opening/closing valve V4.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种高压处理装置，其能够通过防止由布置在第一侧的过滤装置捕获的不需要物质的输送而将高清洁度的高压流体供给到处理室处理室到高压流体，以及高压处理方法。解决方案：高压处理装置设置有主管道26，用于通过过滤器24将高压流体供给单元2与压力容器1连通，以将SCF（高压流体）引导到压力容器1; 以及开闭阀V2和开闭阀V4，其紧固到主导管26上，并且设置在过滤器24的初级侧和次级侧，以夹持过滤器24.当执行清洁处理时，打开/关闭阀V2，V4处于打开状态，SCF从高压流体供给单元2进入压力容器1.然而，当不进行清洗处理时，开闭阀V2，V4 被制成关闭状态，并且SCF被封闭/封闭在开/关阀V2和开/关阀V4之间。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007036109A High pressure processor 审中-公开
标题翻译：高压加工机
公开(公告)号：JP2007036109A
公开(公告)日：2007-02-08
申请号：JP2005220702
申请日：2005-07-29
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SAITO KIMITSUGU
IPC分类号： H01L21/304 , B08B3/02 , G03F1/82
CPC分类号： H01L21/67051 , B08B3/02
摘要： PROBLEM TO BE SOLVED: To provide a high pressure processor capable of improving a uniformity and throughput of surface treatment when a designated surface treatment is processed with respect to a surface of treated object by contacting a high pressure fluid or mixture of the high pressure fluid and medicine to the surface of the treated object as a treatment fluid. SOLUTION: A belt-like treatment fluid, having a length longer than a diameter size of substrate W, hits in vertically a surface S1 of substrate W, rotating while including a rotating center AO of the substrate W, uniformly in a longitudinal direction of sending out passage 101 from the sending out passage 101 opened in a ceiling wall 12b of pressure vessel 1. Therefore, the whole of substrate surface S1 is processed in cleaning treatment by the treatment fluid hitting in vertically the substrate surface S1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提高表面处理的均匀性和通过量的高压处理器，当通过接触高压流体或高压液体的混合物来处理对处理对象的表面进行指定的表面处理时将压力流体和药物作为处理液体施加到被处理物体的表面。解决方案：具有比衬底W的直径尺寸长的长度的带状处理流体垂直地撞击衬底W的表面S1，同时旋转，同时包括衬底W的旋转中心AO，在纵向上均匀地从在压力容器1的顶壁12b上开放的送出通道101发出通道101的方向。因此，通过在基板表面S1的垂直方向上撞击的处理液进行清洁处理，处理整个基板表面S1。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2003282407A High-pressure substrate treating apparatus 有权
标题翻译：高压基板处理设备
公开(公告)号：JP2003282407A
公开(公告)日：2003-10-03
申请号：JP2002083034
申请日：2002-03-25
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KITAKADO RYUJI , MURAOKA YUSUKE , SAITO KIMITSUGU , IWATA TOMOMI , MIYAKE TAKASHI , MIZOBATA IKUO
IPC分类号： G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure substrate treating apparatus that is small- sized and moreover is capable of performing a series of substrate treatments from development to drying with a superior throughput and at a low cost.
SOLUTION: At a developer feeding part 9, a pair of upper and lower housings are arranged adjacent to the opening 12 of a pressure vessel 1, and a developer feeding space is formed inside it. Moreover, openings for allowing a substrate W and a hand 41 to pass through are respectively formed in both sides of the pair of housings, and the and 41 and the substrate W can be conveyed to a treatment chamber 11 along a conveying path 42 in the developer feeding space. In the developer feeding space, nozzles 91 and 92 are arranged in the upper side of the conveying path 42, and a developer is fed to the substrate W from either of the nozzles, to carry out development. Then, the substrate W that is developed in this way is conveyed to the treatment chamber 11 and is subjected to supercritical drying.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种小型化的高压基板处理装置，并且能够以优异的生产量和低成本进行从显影到干燥的一系列基板处理。解决方案：在显影剂供给部分9处，一对上壳体和下壳体邻近压力容器1的开口12布置，并且在其内形成显影剂供给空间。此外，用于使基板W和手41通过的开口分别形成在一对壳体的两侧，并且沿着输送路径42将基板W和基板W输送到处理室11，开发人员饲养空间。在显影剂供给空间中，喷嘴91和92布置在输送路径42的上侧，并且显影剂从任一个喷嘴供给到基板W，以进行显影。然后，以这种方式显影的基板W被输送到处理室11并进行超临界干燥。版权所有（C）2004，JPO

9. 发明专利

JP2003051475A Processing method and processing facilities for wafer or the like 有权
标题翻译：处理方法和处理方法等等
公开(公告)号：JP2003051475A
公开(公告)日：2003-02-21
申请号：JP2001239084
申请日：2001-08-07
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： INOUE YOICHI , ISHII TAKAHIKO , WATANABE KATSUMITSU , SAKASHITA YOSHIHIKO , MIZOBATA IKUO , MIYAKE TAKASHI , KITAKADO RYUJI , MURAOKA YUSUKE , SAITO KIMITSUGU , IWATA TOMOMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a processing system of wafers or the like, that has high versatility, stable and high productivity, and satisfying economic demands in a process, from wet treatment to supercritical drying when producing semiconductor wafers, liquid crystal substrates, or the like.
SOLUTION: The facilities comprises at least one wet treatment apparatus 1, that accommodates wafers or the like at the inside and carries out wet treatment, such as development, film formation, etching, and cleaning, at least one supercritical dryer 2 that accommodates wafers and the like, on the inside and carries out supercritical drying, and a conveyance apparatus 3 that conveys wafers and the like between the wet treatment apparatus 1 and supercritical dryer 2, while the surface is in a wet state. The supercritical dryer 2 has a mechanism for rotating the wafers and the like in the inside.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有高通用性，稳定性和高生产率的晶片等的处理系统，并且在制造半导体晶片时，从湿处理到超临界干燥，液晶基板或类似。解决方案：设备包括至少一个湿处理设备1，其在内部容纳晶片等，并进行湿处理，例如显影，成膜，蚀刻和清洁，至少一个容纳晶片的超临界干燥器2和并且执行超临界干燥，以及在表面处于湿润状态时在湿处理设备1和超临界干燥器2之间传送晶片等的输送设备3。超临界干燥机2具有使内部的晶片等旋转的机构。

10. 发明专利

JP2010174271A Nanoparticle deposition apparatus and nanoparticle deposition method 审中-公开
标题翻译：纳米颗粒沉积装置和纳米沉积方法
公开(公告)号：JP2010174271A
公开(公告)日：2010-08-12
申请号：JP2009015575
申请日：2009-01-27
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： SAITO KIMITSUGU , FURUICHI TAKATSUGU
IPC分类号： C23C14/24 , B01J23/75 , C23C14/00 , C23C14/14
摘要： PROBLEM TO BE SOLVED: To provide a nanoparticle deposition technology capable of depositing nanoparticles at high throughput. SOLUTION: A K-cell 40 is arranged immediately below a substrate W held by a substrate holding unit 30 in a vacuum chamber 10. Cobalt being a raw material of nanoparticles is charged in a crucible 41 of the K-cell 40. An opening part of the crucible 41 is covered by a gas jetting unit 51 of a gas jetting tool 50. The gas jetting unit 51 has a tapered surface with an aperture 52 formed at the upper end thereof, and its inner side forms a vapor generating space 45. Helium gas is supplied from a gas supply unit 60 to the vapor generating space 45 in which the crucible 41 is heated to generate the vapor of cobalt. Helium gas forms the gas flow which is jetted from the aperture 52 and directed to the substrate W. The vapor of cobalt is carried to the substrate W while forming the cluster by the helium gas flow. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够以高生产量沉积纳米颗粒的纳米颗粒沉积技术。解决方案：将K单元40布置在由基板保持单元30保持在真空室10中的基板W的正下方。将作为纳米颗粒的原料的钴装入K单元40的坩埚41中。坩埚41的开口部分由气体喷射工具50的气体喷射单元51覆盖。气体喷射单元51具有锥形表面，其上端形成有孔52，其内侧形成蒸气产生氦气从气体供给单元60供给到蒸发发生空间45，在蒸气发生空间45中加热坩埚41以产生钴的蒸气。氦气形成从孔52喷射并引导到衬底W的气流。当通过氦气流形成簇时，钴的蒸气被传送到衬底W。版权所有（C）2010，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式