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1. 发明专利

JP2004288681A Device and method for high-pressure treatment 有权
公开(公告)号：JP2004288681A
公开(公告)日：2004-10-14
申请号：JP2003075556
申请日：2003-03-19
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： MURAOKA YUSUKE , IWATA TOMOMI , SAITO KIMITSUGU , YAMAGATA MASAHIRO , OSHIBA HISANORI , SARUMARU SHIYOUGO
IPC分类号： G03F7/42 , B08B3/08 , B08B7/00 , H01L21/027 , H01L21/304
CPC分类号： B08B7/0021
摘要： PROBLEM TO BE SOLVED: To provide a device and a method for high-pressure treatment by which prescribed surface treatment is performed on an object to be treated by bringing a treating fluid prepared by mixing all or part of a plurality of chemicals with a high-pressure fluid into contact with the surface of the object and, in addition, the constitution of the device can be simplified and the cost can be reduced.
SOLUTION: A mixing valve 42 is made to communicate with a tank 51D exclusively used for storing a compatible agent D through an inlet valve 43 and, at the same time, with tanks 51A-51C exclusively used for respectively storing auxiliaries A-C through three injection valves. A compounded chemical is prepared by selectively injecting part of the four kinds of chemicals into the mixing valve 42 by controlling the opening and closing of the inlet valve 43 and injection valves and mixing the injected chemicals with each other. Then the treatment fluid is prepared by force-feeding the compounded chemical to an SCF through a high-pressure pump 45 and mixing the chemical. Consequently, the cost of the device can be reduced by suppressing the number of components used in the high-pressure section of the device. In addition, the pipeline system used for force-feeding the chemical is simplified.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2005142301A High-pressure processing method and apparatus thereof 审中-公开
标题翻译：高压加工方法及其设备
公开(公告)号：JP2005142301A
公开(公告)日：2005-06-02
申请号：JP2003376032
申请日：2003-11-05
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： SAKASHITA YOSHIHIKO , KANDA TAKESHI , ISHII TAKAHIKO , KIYOSE HIROMI , MURAOKA YUSUKE , IWATA TOMOMI , MIZOBATA IKUO
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure processing method and an apparatus for enabling supply of the high cleanliness, high-pressure fluid.
SOLUTION: In the high-pressure processing method for conducting high-pressure process on a processing object within a high-pressure processing chamber through contact with the high-pressure fluid under the pressurized condition, the high-pressure fluid is guided into the high-pressure processing chamber after filtering thereof. The high-pressure processing apparatus comprises a high-pressure processing chamber, a high-pressure fluid supply means for supplying the high-pressure fluid to the high-pressure processing chamber, and a high-pressure fluid filtering means. Further, the apparatus comprises a structure for adding to the high pressure fluid, one or more chemical solutions other than the high-pressure fluid supplied, from the high-pressure fluid supplying means.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供高压处理方法和能够供应高洁净度的高压流体的装置。解决方案：在高压处理室内，通过在加压状态下与高压流体接触而对高压处理室内的加工对象进行高压处理的高压处理方法中，将高压流体引导到过滤后的高压处理室。高压处理装置包括高压处理室，用于向高压处理室供给高压流体的高压流体供给装置和高压流体过滤装置。此外，该装置包括从高压流体供给装置向高压流体添加除了供给的高压流体以外的一种以上的化学溶液的结构。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2005033135A Cleaning device for microstructure 审中-公开
标题翻译：用于微结构的清洁装置
公开(公告)号：JP2005033135A
公开(公告)日：2005-02-03
申请号：JP2003273587
申请日：2003-07-11
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： YAMAGATA MASAHIRO , INOUE YOICHI , OSHIBA HISANORI , MURAOKA YUSUKE , IWATA TOMOMI , SAITO KIMITSUGU
IPC分类号： B08B3/08 , B08B7/00 , H01L21/00 , H01L21/027 , H01L21/304
CPC分类号： H01L21/67051 , B08B7/0021
摘要： PROBLEM TO BE SOLVED: To provide a cleaning device for a microstructure whereby a contamination caused by a toxic substance leaking from the cleaning device can be minimized and a human body is hardly affected in the cleaning device for removing an unwanted substance adhering to the microstructure by fluidizing, under high pressure, a cleaning agent composition essentially containing carbon dioxide and a cleaning component and bringing the composition into contact with the microstructure.
SOLUTION: The cleaning device removes an unwanted substance adhering to the microstructure by fluidizing, under high pressure, the cleaning agent composition essentially containing carbon dioxide and the cleaning component and bringing the composition into contact with the microstructure. In a cleaning process performed by the cleaning device, the toxic substance is present anywhere on the cleaning device. Of the cleaning device, a part where the toxic substance is likely to leak is housed in an enclosed structure comprising a first evacuating means.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于微结构的清洁装置，由此能够使从清洁装置泄漏的有毒物质引起的污染最小化，并且在清洁装置中几乎不影响人体，以除去附着于通过在高压下流化基本上含有二氧化碳和清洁组分并使组合物与微结构接触的清洁剂组合物的微结构。解决方案：清洁装置通过在高压下流化基本上包含二氧化碳和清洁组分并使组合物与微结构接触的清洁剂组合物来除去附着在微结构上的不需要的物质。在由清洁装置执行的清洁过程中，有毒物质存在于清洁装置上的任何地方。在清洁装置中，有毒物质可能泄漏的部分容纳在包括第一排气装置的封闭结构中。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2003051475A Processing method and processing facilities for wafer or the like 有权
标题翻译：处理方法和处理方法等等
公开(公告)号：JP2003051475A
公开(公告)日：2003-02-21
申请号：JP2001239084
申请日：2001-08-07
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： INOUE YOICHI , ISHII TAKAHIKO , WATANABE KATSUMITSU , SAKASHITA YOSHIHIKO , MIZOBATA IKUO , MIYAKE TAKASHI , KITAKADO RYUJI , MURAOKA YUSUKE , SAITO KIMITSUGU , IWATA TOMOMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a processing system of wafers or the like, that has high versatility, stable and high productivity, and satisfying economic demands in a process, from wet treatment to supercritical drying when producing semiconductor wafers, liquid crystal substrates, or the like.
SOLUTION: The facilities comprises at least one wet treatment apparatus 1, that accommodates wafers or the like at the inside and carries out wet treatment, such as development, film formation, etching, and cleaning, at least one supercritical dryer 2 that accommodates wafers and the like, on the inside and carries out supercritical drying, and a conveyance apparatus 3 that conveys wafers and the like between the wet treatment apparatus 1 and supercritical dryer 2, while the surface is in a wet state. The supercritical dryer 2 has a mechanism for rotating the wafers and the like in the inside.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有高通用性，稳定性和高生产率的晶片等的处理系统，并且在制造半导体晶片时，从湿处理到超临界干燥，液晶基板或类似。解决方案：设备包括至少一个湿处理设备1，其在内部容纳晶片等，并进行湿处理，例如显影，成膜，蚀刻和清洁，至少一个容纳晶片的超临界干燥器2和并且执行超临界干燥，以及在表面处于湿润状态时在湿处理设备1和超临界干燥器2之间传送晶片等的输送设备3。超临界干燥机2具有使内部的晶片等旋转的机构。

5. 发明专利

JP2005116944A High pressure processor and high pressure processing method 有权
标题翻译：高压处理器和高压加工方法
公开(公告)号：JP2005116944A
公开(公告)日：2005-04-28
申请号：JP2003352168
申请日：2003-10-10
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： MURAOKA YUSUKE , IWATA TOMOMI , SAITO KIMITSUGU , YAMAGATA MASAHIRO , INOUE YOICHI , OSHIBA HISANORI
IPC分类号： B08B3/08 , G05D11/13 , H01L21/304 , H01L21/306
CPC分类号： G05D11/132 , Y10S134/902
摘要： PROBLEM TO BE SOLVED: To do structure simplification and cost reduction for a high pressure processor and a high pressure processing method that performs specified surface treatment by bringing processing fluid into contact with the surface of an object to be processed, the processing fluid prepared by mixing high pressure fluid and all or some of agents of two or more kinds. SOLUTION: The high pressure processor has mixing vessels 6A and 6B that temporarily store agents A and B, respectively. The respective mixing vessels 6A and 6B are connected to a high pressure fluid supply unit 2. When a mixture (processing fluid) of the agent A and SCF is used to do surface treatment, SCF is pressed from the high pressure fluid supply unit 2 to the mixing vessel 6A where the agent A is stored in advance, and the agent A is dissolved by the SCF that flows into the mixing vessel 6A, thus producing a mixture (processing fluid) of the agent A and the SCF. Further, a high pressure valve (processing fluid injection valve) 39 is opened to feed the processing fluid into the pressure vessel 1. Thus, the processing fluid is used to carry out the specified surface treatment onto the substrate arranged in the pressure vessel 1. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了进行高压处理器的结构简化和成本降低以及通过使处理流体与待处理物体的表面接触来进行规定的表面处理的处理流体通过混合高压流体和两种或多种所有或一些试剂制备。解决方案：高压处理器具有分别临时存储试剂A和B的混合容器6A和6B。各个混合容器6A和6B连接到高压流体供应单元2.当使用试剂A和SCF的混合物（处理流体）进行表面处理时，SCF从高压流体供应单元2被压到预先存储试剂A的混合容器6A，并且试剂A被流入混合容器6A的SCF溶解，从而产生试剂A和SCF的混合物（加工流体）。此外，打开高压阀（处理流体喷射阀）39，以将处理流体供给到压力容器1中。因此，处理流体用于对设置在压力容器1中的基板进行规定的表面处理。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004172231A Substrate treatment method, substrate treatment equipment, and substrate treatment system 审中-公开
公开(公告)号：JP2004172231A
公开(公告)日：2004-06-17
申请号：JP2002334115
申请日：2002-11-18
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： MURAOKA YUSUKE , SAITO KIMITSUGU , IWATA TOMOMI , MUNEMASA ATSUSHI , OSHIBA HISANORI , SARUMARU SHIYOUGO
IPC分类号： G02F1/13 , B08B3/02 , B08B3/10 , G02F1/1333 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To efficiently carry out a series of treatments from a wet treatment to a dry treatment without damaging a substrate.
SOLUTION: In a development unit 10A and 10B, a development treatment, rinsing, and a permutation treatment are conducted in this order on a substrate W. Thereafter, the substrate W which is wet with a drying prevention liquid is wet-transferred to a super-critical drying unit 20 by means of a main transfer robot 30. In the super-critical drying unit 20, high-pressure drying (super-critical drying) which is a technical treatment is carried out. Consequently, without putting any limitations to the kind of a developer to be used in the development treatment and without causing such problems as the corrosion in a pressure vessel 202 of the super-critical drying unit 20, a series of processes from the development treatment to the high-pressure drying treatment are carried out. Due to the existence of the drying prevention liquid, the substrate W is kept from natural drying during transportation.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2004146457A High pressure processing method and apparatus 有权
标题翻译：高压加工方法和装置
公开(公告)号：JP2004146457A
公开(公告)日：2004-05-20
申请号：JP2002307349
申请日：2002-10-22
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： YOSHIKAWA TETSUYA , INOUE YOICHI , WATANABE KATSUMITSU , MASUDA KAORU , IIJIMA KATSUYUKI , IWATA TOMOMI , MURAOKA YUSUKE , SAITO KIMITSUGU , MIZOBATA IKUO
IPC分类号： B08B7/00 , C25F1/00 , G03F7/00 , H01L21/00 , H01L21/302 , H01L21/304
CPC分类号： H01L21/67017 , B08B7/0021
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure processing method and an apparatus which are capable of carrying out a high-pressure process with high efficiency and uniformity when a semiconductor wafer or the like is subjected to high-pressure processing by the use of a critical fluid.
SOLUTION: In the method of performing high-pressure processing on a work 2 by the use of supercritical or subcritical fluid, the fluid is made to impinge on the surface 2a of the work 2 arranged in a high-pressure processing chamber 9 and then to flow outward from the work 2 along the surface 2a of the work 2.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种高压处理方法和装置，当半导体晶片等通过高压处理进行高压处理时，能够以高效率和均匀性进行高压处理使用临界液体。解决方案：在通过使用超临界或亚临界流体对工件2进行高压处理的方法中，流体被撞击在布置在高压处理室9中的工件2的表面2a上然后沿着工作2的表面2a从工件2向外流动。版权所有（C）2004年，JPO

8. 发明专利

JP2004079859A High-pressure treatment apparatus 有权
公开(公告)号：JP2004079859A
公开(公告)日：2004-03-11
申请号：JP2002239828
申请日：2002-08-20
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： WATANABE KATSUMITSU , SARUMARU SHIYOUGO , SAKASHITA YOSHIHIKO , KIYOSE HIROMI , IWATA TOMOMI , SAITO KIMITSUGU , MURAOKA YUSUKE
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure treatment apparatus which is capable of increasing its inner pressure at a higher rise rate of pressure without causing damage to a work, shortening a treating time, ensuring a uniform treatment for the work, and reduced in volume.
SOLUTION: The high-pressure treatment apparatus is equipped with a high-pressure vessel 1 housing a plurality of the works 6 and a feed unit feeding a treating fluid to the high-pressure vessel 1. A step-up inlet 10 for feeding the treating fluid into the high-pressure vessel 1 to increase its internal pressure and a treatment inlet 11 for feeding the treating fluid to a plurality of the works 6 are separately provided to the feed unit, a holding means 7 holding the works separately is provided inside the high-pressure vessel 1, and the treatment inlet 11 is provided to the holding means 7.
COPYRIGHT: (C)2004,JPO

9. 发明专利

JP2013077596A Substrate processing method and substrate processing apparatus 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：JP2013077596A
公开(公告)日：2013-04-25
申请号：JP2011214934
申请日：2011-09-29
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： ARAKI HIROYUKI , IWATA TOMOMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus which reduce the adhesive force of foreign objects to a substrate thereby reducing the running cost.SOLUTION: Droplets from a liquid drop nozzle 15 are supplied only to a part of a region on an upper surface of a substrate W. Then, the droplets held on the upper surface of the substrate W are cooled or heated. The cooling or heating of the droplets changes the temperature of the droplets on the substrate W. Particles contacting with the droplets are cooled or heated by the droplets to shrink or expand.

10. 发明专利

JP2009193999A Substrate processing device and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2009193999A
公开(公告)日：2009-08-27
申请号：JP2008030188
申请日：2008-02-12
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： IWATA TOMOMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device capable of efficiently drying the entire surfaces of a plurality of substrates lifted from a processing liquid in a short time.
SOLUTION: A substrate moving mechanism 30 moves a holding portion 31 holding a substrate W into an inner tank 40 where a cleaning liquid is reserved. Then, the cleaning liquid in the inner tank 40 is replaced with a rinse liquid RL. Then, the substrate moving mechanism 30 lifts the substrate W to above the inner tank 40. At this time, dry air DF is supplied from a dry air supply duct 62 to the substrate W. During the lifting of the substrate W, parts y1, y2 and y3 of the substrate W abutting on the holding portion 31 are lifted to a predetermined height above the processing tank 4 and then the lifting operation for the substrate W by the substrate moving mechanism 30 is stopped. Then a valve V1 is closed and a valve V2 is opened. Consequently, all the rinse liquid RL in the inner tank 40 is sent from a processing liquid discharge pipe 42 to a discharge facilities (not shown in the figure) in the factory.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够在短时间内有效地干燥从处理液体提起的多个基板的整个表面的基板处理装置。解决方案：基板移动机构30将保持基板W的保持部31移动到保留了清洗液的内箱40内。然后，用清洗液RL代替内罐40中的清洗液。然后，基板移动机构30将基板W提升到内侧箱体40的上方。此时，干燥空气DF从干燥空气供给管道62供给到基板W.在提升基板W的过程中，接触保持部31的基板W的y2和y3被提升到处理槽4的上方的预定高度，然后基板移动机构30的基板W的提升动作停止。然后关闭阀V1并打开阀V2。因此，内箱40中的所有冲洗液RL在出厂时从处理液排出管42送至排出设施（图中未示出）。版权所有（C）2009，JPO＆INPIT

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