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1. 发明专利

JP2010232522A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2010232522A
公开(公告)日：2010-10-14
申请号：JP2009080005
申请日：2009-03-27
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HAYASHI TOYOHIDE
IPC分类号： H01L21/677
摘要： PROBLEM TO BE SOLVED: To prevent or suppress entry of the atmosphere in a substrate conveyance space into a substrate storage container.
SOLUTION: An indexer space and an external space are formed with a partition 7. On the partition 7, a passage hole 8 opposed to the substrate entrance/exit port 10 of the substrate storage container C mounted on a storage container mounting table 6 is formed. On the opposite side of the storage container mounting table 6 from the passage hole 8, a cover 20 in a nearly box shape is provided which covers the entire area of the passage hole 8. A laterally long opening 28 where a hand 15 passes through when the substrate W is taken in and out of the substrate container C is formed in the opposite wall 21 of the cover 20. The width of the opening 28 in the height direction is set to be about twice as large as stacking intervals N of substrates W in the substrate storage container C. A cover elevating and lowering drive mechanism for elevating and lowering the cover 20 is coupled to a support member for supporting the cover 20.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了防止或抑制基板输送空间中的气氛进入基板收纳容器。解决方案：分隔器空间和外部空间形成有分隔件7.在分隔件7上，与安装在存储容器安装台上的基板存储容器C的基板入口/出口10相对的通孔8 形成6。在储存容器安装台6的与通孔8相反的一侧上，设有覆盖通道孔8的整个区域的几乎为箱形的盖子20.手15通过的横向长的开口28 在盖20的相对壁21上形成有衬底W被吸入和移出基板容器C.开口28的高度方向的宽度被设定为基板W的堆叠间隔N的两倍用于升降罩20的盖升降驱动机构与用于支承罩20的支承部件联接。（C）2011年，JPO＆INPIT

2. 发明专利

JP2008066464A Substrate treatment equipment and substrate treatment method 有权
标题翻译：基板处理设备和基板处理方法
公开(公告)号：JP2008066464A
公开(公告)日：2008-03-21
申请号：JP2006241798
申请日：2006-09-06
申请人： Dainippon Screen Mfg Co Ltd , Kurita Water Ind Ltd , 大日本スクリーン製造株式会社 , 栗田工業株式会社
发明人： NAGAI TATSUO , MORITA HIROSHI , TAKAHASHI HIROAKI , UCHIDA HIROAKI , HAYASHI TOYOHIDE
IPC分类号： H01L21/027 , B08B3/02 , B08B3/08 , G02F1/13 , G11B7/26 , H01L21/304
CPC分类号： G03F7/423 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment and a substrate treatment method which can remove a resist from a substrate well and can reuse a treatment liquid used for removing the resist.
SOLUTION: A persulfuric acid generated by an electrolysis of a low-concentration sulfuric acid having a concentration of 4 mol/l in a persulfuric acid generation bath 12 and a high-temperature and high-concentration sulfuric acid having a temperature of 120°C and a concentration of 96 wt.% are supplied to a mixing valve 8. Then, the persulfuric acid and the high-temperature and high-concentration sulfuric acid are mixed in the mixing valve 8 and dilution heat is generated for the dilution of the high-temperature and high-concentration sulfuric acid by the persulfuric acid. The temperature of the mixed solution of the persulfuric acid and the high-temperature and high-concentration sulfuric acid sharply rises to a high temperature of the liquid temperature of the high-temperature and high-concentration sulfuric acid or higher by the dilution heat and heat that the high-temperature and high-concentration sulfuric acid has. The mixed solution whose temperature has risen to a high temperature is immediately fed to a nozzle 3 from the mixing valve 8 and discharged toward the surface of a wafer W from the nozzle 3.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以从基材中去除抗蚀剂的基板处理设备和基板处理方法，并且可以重新利用用于除去抗蚀剂的处理液。解决方案：通过在过硫酸发生浴12中的浓度为4mol / l的低浓度硫酸和温度为120℃的高温高浓度硫酸电解生成的过硫酸 ℃和96重量％的浓度供给到混合阀8.然后，将过硫酸和高温高浓度硫酸混合在混合阀8中，产生稀释热，以稀释高温高浓硫酸经过硫酸。过硫酸和高温高浓度硫酸的混合溶液的温度通过稀释热和热量急剧上升到高温高浓度硫酸的液温的高温高温高浓硫酸具有。温度上升到高温的混合溶液立即从混合阀8供给到喷嘴3，并从喷嘴3向晶片W的表面排出。（C）2008，JPO＆INPIT

3. 发明专利

JP2013182957A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2013182957A
公开(公告)日：2013-09-12
申请号：JP2012044650
申请日：2012-02-29
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： MURAMOTO RYO , HAYASHI TOYOHIDE , HASHIMOTO MITSUHARU
IPC分类号： H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can perform a process on a main surface of the substrate using the chemical solution favourably by maintaining the chemical solution on the main surface of the substrate at a high temperature.SOLUTION: A substrate processing apparatus 1 includes: a wafer rotation mechanism 3 holding a wafer W; a peeling liquid nozzle 4 supplying an SPM liquid onto a surface of the wafer W held by the wafer rotation mechanism 3; and a heater head 35 which has an infrared lamp 38, is disposed facing the surface of the wafer W held by the wafer rotation mechanism 3, and heats the SPM liquid supplied onto the surface of the wafer W with infrared ray radiation from the infrared lamp 38. The heater head 35 is moved along the surface of the wafer W held by the wafer rotation mechanism 3.
摘要翻译：要解决的问题：提供一种基板处理装置，其可以通过在高温下将化学溶液保持在基板的主表面上而使用化学溶液在基板的主表面上进行处理。解决方案：基板处理装置1包括：保持晶片W的晶片旋转机构3; 将由SPM液体供给到由晶片旋转机构3保持的晶片W的表面上的剥离液喷嘴4; 并且具有红外灯38的加热器头35设置成面对由晶片旋转机构3保持的晶片W的表面，并且用来自红外灯的红外线辐射加热供应到晶片W的表面上的SPM液体加热器头35沿着由晶片旋转机构3保持的晶片W的表面移动。

4. 发明专利

JP2008235341A Substrate processing apparatus and substrate processing method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2008235341A
公开(公告)日：2008-10-02
申请号：JP2007068806
申请日：2007-03-16
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： TAKAHASHI HIROAKI , HAYASHI TOYOHIDE
IPC分类号： H01L21/027 , B08B3/02 , B08B3/08 , B08B3/10 , B08B3/12 , G02F1/13 , G02F1/1333 , G03F7/42 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, capable of removing even a resist having a curing layer on its surface without damaging the substrate. SOLUTION: An SPM (sulfuric acid hydrogen peroxide mixture) is supplied from an SPM nozzle 5 to the surface of a wafer W. After finishing the supply of the SPM, sulfuric acid of about 200°C provided with ultrasonic vibration is supplied from an ultrasonic sulfuric acid nozzle 6 to the surface of the wafer W. The SPM supplied to the surface of the wafer W permeates to the inside of a curing layer through a large number of pores formed on the curing layer. A live resist (uncured resist) in the inside of the curing layer is removed, and only the hollowed curing layer remains on the surface of the wafer W. When the sulfuric acid provided with the ultrasonic vibration is supplied to the surface of the wafer W, the resist curing layer remaining on the surface of the wafer W is pulverized by physical energy of the ultrasonic vibration and removed from the surface of the wafer W. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种即使在其表面上除去具有固化层的抗蚀剂也不会损坏基板的基板处理装置和基板处理方法。解决方案：将SPM（硫酸过氧化氢混合物）从SPM喷嘴5供给到晶片W的表面。在完成SPM的供给之后，提供提供超声波振动的约200℃的硫酸从超声波硫酸喷嘴6到晶片W的表面。提供给晶片W的表面的SPM通过形成在固化层上的大量孔渗透到固化层的内部。去除固化层内部的活性抗蚀剂（未固化的抗蚀剂），并且只有中空的固化层残留在晶片W的表面上。当提供超声波振动的硫酸被供应到晶片W的表面残留在晶片W的表面上的抗蚀剂固化层被超声波振动的物理能量粉碎，从晶片W的表面除去。（C）2009，JPO＆INPIT

5. 发明专利

JP2008060508A Substrate treating device and method 审中-公开
标题翻译：基板处理装置和方法
公开(公告)号：JP2008060508A
公开(公告)日：2008-03-13
申请号：JP2006238891
申请日：2006-09-04
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： UCHIDA HIROAKI , HAYASHI TOYOHIDE
IPC分类号： H01L21/304 , B08B3/02 , B08B5/04 , G02F1/13 , G02F1/1333 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating device and a substrate treatment method capable of preventing a treatment liquid from being scattered to the periphery of a substrate and treating the substrate using the treatment liquid.
SOLUTION: The treatment liquid held on the lower surface of a push-pull nozzle 15 is brought into contact with a wafer W being rotated. In this state, the push-pull nozzle 15 is allowed to reciprocate between a position including a rotation center C in the wafer W and the position of the peripheral section of the wafer W by the rocking of the rocking arm 14. The liquid-contacting position on the surface of the wafer W draws an arc trajectory and reciprocates, thus bringing the entire region on the surface of the wafer W into liquid-contact with a medicinal solution.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够防止处理液体散布到基板的周围并使用处理液处理基板的基板处理装置和基板处理方法。保护在推挽喷嘴15的下表面的处理液与被旋转的晶片W接触。在这种状态下，推挽喷嘴15能够通过摆动臂14的摆动在包括晶片W中的旋转中心C的位置和晶片W的周边部分的位置之间往复运动。液体接触在晶片W的表面上的位置产生电弧轨迹并往复运动，从而将晶片W的表面上的整个区域与药液进行液体接触。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2009272548A Substrate treatment apparatus 有权
标题翻译：基板处理设备
公开(公告)号：JP2009272548A
公开(公告)日：2009-11-19
申请号：JP2008123584
申请日：2008-05-09
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： TAKAHASHI HIROAKI , HAYASHI TOYOHIDE
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of shortening a time required for predispensing and reducing the consumption of a first fluid which is heated or cooled. SOLUTION: An upstream end of a sulfuric acid feeding pipe 14 connected to an SPM (sulfuric acid/hydrogen peroxide mixture) nozzle 4 is branch-connected to a circulation pipe 22 in a treatment liquid cabinet 2. In the treatment liquid cabinet 2, a first pipe joint 30 is provided in the sulfuric acid feeding pipe 14. At an end of a nozzle arm 10 in a treatment chamber 1, a second pipe joint 31 is provided in the sulfuric acid feeding pipe 14 so that the joint is disposed in proximity to the SPM nozzle 4. Between the first and second pipe joints 30 and 31, the circulation pipe 22 and the sulfuric acid feeding pipe 14 constitute a double pipe structure with the sulfuric acid feeding pipe 14 inserted into the circulation pipe 22. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够缩短预先分配所需时间并降低被加热或冷却的第一流体的消耗的基板处理装置。
解决方案：连接到SPM（硫酸/过氧化氢混合物）喷嘴4的硫酸进料管14的上游端与处理液体箱2中的循环管22分支连接。在处理液箱如图2所示，在硫酸供给管14中设置有第一管接头30.在处理室1中的喷嘴臂10的端部，在硫酸供给管14中设置有第二管接头31，设置在SPM喷嘴4附近。在第一和第二管接头30和31之间，循环管22和硫酸进料管14构成了将硫酸进料管14插入循环管22中的双管结构。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009239026A Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置和方法
公开(公告)号：JP2009239026A
公开(公告)日：2009-10-15
申请号：JP2008083360
申请日：2008-03-27
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HAYASHI TOYOHIDE
IPC分类号： H01L21/027 , B08B3/02 , G02F1/13 , H01L21/304 , H01L21/306 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method which can prevent a defect in processing on a substrate. SOLUTION: A spin chuck 21 of a processing section is provided with a spin base 22 rotatably. On the spin base 22, a plurality of holding portions 23 for holding the substrate W are provided. Each of the holding portions 23 has a holding member 52 and a support pin 81. When a processing liquid (chemicals) is supplied to the substrate W, the spin base 22 is rotated at about 300 r.p.m. while supported on the support pin 81. When a rinse liquid is supplied to the substrate W, the spin base 22 is rotated at about 1,000 r.p.m. while held by the holding member 52. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种可以防止在基板上的加工缺陷的基板处理装置和基板处理方法。解决方案：处理部分的旋转卡盘21可旋转地设置有旋转基座22。在旋转基座22上设置有用于保持基板W的多个保持部23。每个保持部23具有保持构件52和支撑销81.当将处理液（化学品）供给到基板W时，旋转基座22以约300r.p.m的速度旋转。同时支撑在支撑销81上。当冲洗液体被供应到基底W时，旋转基座22以大约1,000r.p.m的速度旋转。由持有成员52持有。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2007035866A Substrate treatment apparatus 有权
标题翻译：基板处理设备
公开(公告)号：JP2007035866A
公开(公告)日：2007-02-08
申请号：JP2005216196
申请日：2005-07-26
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HAYASHI TOYOHIDE , HASEGAWA KOJI , HASHIZUME AKIO
IPC分类号： H01L21/304 , B08B3/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of suppressing or preventing the diffusion of the mist of a treatment liquid and improving substrate treatment quality.
SOLUTION: The substrate W is held by a spin chuck 21 and rotated. A shielding plate 22 is arranged above the substrate W. The side of the substrate W is surrounded with a splash guard 24. The opening 24a of the splash guard 24 has a clearance C1 formed at closing which can pass a treatment-liquid nozzle 66 sidewise inserted through it, and is shielded with a shielding plate 23. For example, an SPM liquid (sulfuric acid hydrogen peroxide mixture liquid) is supplied from the treatment-liquid nozzle 66. The inside of a treatment vessel 20 formed of the splash guard 24 and a treatment cup 22 is exhausted via a drainage/exhaust pipe 34. The shielding position of the shielding plate 23 is determined so that an air current in a predetermined wind speed range toward the inside of the treatment liquid vessel 20 is generated in the clearance C1 formed at closing.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决问题的方法：提供能够抑制或防止处理液的雾的扩散，提高基板处理品质的基板处理装置。解决方案：基板W被旋转卡盘21保持并旋转。遮蔽板22设置在基板W的上方。基板W的一侧被防溅罩24包围。防溅罩24的开口24a具有在关闭时形成的间隙C1，该间隙可以使处理液喷嘴66侧向插入其中并用屏蔽板23屏蔽。例如，从处理液喷嘴66供给SPM液体（硫酸过氧化氢混合液）。由防溅罩24形成的处理容器20的内部并且处理杯22经由排水/排气管34排出。屏蔽板23的屏蔽位置被确定为使得在预定的风速范围内朝向处理液体容器20的内部的气流产生在间隙 C1在关闭时形成。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006032858A Substrate treating device 有权
标题翻译：基板处理设备
公开(公告)号：JP2006032858A
公开(公告)日：2006-02-02
申请号：JP2004213531
申请日：2004-07-21
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KOUGAKI KOUICHI , TANIGUCHI HIDEYUKI , HAYASHI TOYOHIDE , INOUE KAZUKI , YOSHIDA TAKESHI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating device for supplying a rinse liquid to the entire region of the surface of a substrate without any irregularities without causing any inconveniences, such as the drying marks of chemicals.
SOLUTION: A first rinse liquid fixing nozzle 8 and a second rinse liquid fixing nozzle 9 are arranged adjacently on the upper surface of a splash guard 5. The rinse liquid from the first rinse liquid fixing nozzle 8 is supplied to the rotation center of the surface of a wafer W rotated by a spin chuck 3, while the rinse liquid from the second rinse liquid fixing nozzle 9 is supplied to a 1/4 circular (sector) region that orthogonally crosses a projection straight line L in a plan view and is at the downstream side in the rotary direction of the wafer W from the projection straight line L in a semicircular region at the side of the first rinse liquid fixing nozzle 8 (the side of the second rinse liquid fixing nozzle 9) to a straight line D in parallel with the surface of the wafer W, thus supplying a sufficient amount of rinse liquid to the entire region of the surface of the wafer W.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于将冲洗液体供应到基板表面的整个区域而没有任何不规则性的基板处理装置，而不会引起诸如化学品的干燥痕迹的任何不便。解决方案：第一冲洗液体固定喷嘴8和第二冲洗液体固定喷嘴9相邻布置在防溅罩5的上表面上。来自第一漂洗液固定喷嘴8的冲洗液体被供应到旋转中心通过旋转卡盘3旋转的晶片W的表面，同时来自第二冲洗液体固定喷嘴9的冲洗液体被供给到在平面图中正交地穿过突出直线L的1/4圆形（扇形）区域并且在第一冲洗液固定喷嘴8侧（第二冲洗液固定喷嘴9侧）的半圆形区域中的投影直线L向晶片W的旋转方向的下游侧延伸至直线线D与晶片W的表面平行，从而向晶片W的表面的整个区域提供足够量的冲洗液。（C）2006，JPO和NCIPI

10. 发明专利

JP2006024793A Chemical solution recovering method and board processing device 审中-公开
标题翻译：化学解决方案回收方法和板加工设备
公开(公告)号：JP2006024793A
公开(公告)日：2006-01-26
申请号：JP2004202268
申请日：2004-07-08
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： KOUGAKI KOUICHI , TANIGUCHI HIDEYUKI , HAYASHI TOYOHIDE , INOUE KAZUKI , YOSHIDA TAKESHI
IPC分类号： H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a chemical solution recovering method and a board processing device, wherein the lifetime of a filter can be prolonged for removing a chemical solution to be repeatedly used for a board processing or a contaminant in the chemical solution.
SOLUTION: While a predetermined time period passes from a chemical solution feeding start to a wafer, the chemical solution used for the process of the wafer is discarded to a high-density discharge drain through a common line 15 and a branch discarding line 24. The chemical solution used for the process of the wafer, after the passage of the predetermined time period, is recovered to a recovery tank 22 through the common line 15 and a branch recovering line 23. For this reason, even if a large amount of contaminants, such as polymer or the like, are removed from the wafer at an initial stage after a supply start of the chemical solution, a large amount of contaminants can be prevented from being mixed to the chemical solution in the recovery tank 22. As a result, the lifetime of a front-stage filter 35 or of the like for removing the contaminants from the chemical solution to be reused can be prolonged, and also the lifetime of the chemical solution to be repeatedly used can be prolonged.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供化学溶液回收方法和板处理装置，其中可以延长过滤器的寿命以除去化学溶液以重复用于板处理或化学溶液中的污染物。解决方案：在从化学溶液供给开始到晶片的预定时间段期间，用于晶片处理的化学溶液通过公共线15和分支丢弃线被丢弃到高密度排放漏极用于晶片处理的化学溶液经过预定时间段后，通过公共管线15和分支回收管线23回收到回收罐22中。因此，即使大量的污染物如聚合物等在化学溶液供应开始后的初始阶段从晶片中除去，可以防止大量污染物与回收罐22中的化学溶液混合。作为结果，可以延长用于从要再次使用的化学溶液中除去污染物的前级过滤器35等的寿命，并且可以重复使用的化学溶液的寿命渴望。版权所有（C）2006，JPO＆NCIPI

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