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1. 发明专利

JP2008066464A Substrate treatment equipment and substrate treatment method 有权
标题翻译：基板处理设备和基板处理方法
公开(公告)号：JP2008066464A
公开(公告)日：2008-03-21
申请号：JP2006241798
申请日：2006-09-06
申请人： Dainippon Screen Mfg Co Ltd , Kurita Water Ind Ltd , 大日本スクリーン製造株式会社 , 栗田工業株式会社
发明人： NAGAI TATSUO , MORITA HIROSHI , TAKAHASHI HIROAKI , UCHIDA HIROAKI , HAYASHI TOYOHIDE
IPC分类号： H01L21/027 , B08B3/02 , B08B3/08 , G02F1/13 , G11B7/26 , H01L21/304
CPC分类号： G03F7/423 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide substrate treatment equipment and a substrate treatment method which can remove a resist from a substrate well and can reuse a treatment liquid used for removing the resist.
SOLUTION: A persulfuric acid generated by an electrolysis of a low-concentration sulfuric acid having a concentration of 4 mol/l in a persulfuric acid generation bath 12 and a high-temperature and high-concentration sulfuric acid having a temperature of 120°C and a concentration of 96 wt.% are supplied to a mixing valve 8. Then, the persulfuric acid and the high-temperature and high-concentration sulfuric acid are mixed in the mixing valve 8 and dilution heat is generated for the dilution of the high-temperature and high-concentration sulfuric acid by the persulfuric acid. The temperature of the mixed solution of the persulfuric acid and the high-temperature and high-concentration sulfuric acid sharply rises to a high temperature of the liquid temperature of the high-temperature and high-concentration sulfuric acid or higher by the dilution heat and heat that the high-temperature and high-concentration sulfuric acid has. The mixed solution whose temperature has risen to a high temperature is immediately fed to a nozzle 3 from the mixing valve 8 and discharged toward the surface of a wafer W from the nozzle 3.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以从基材中去除抗蚀剂的基板处理设备和基板处理方法，并且可以重新利用用于除去抗蚀剂的处理液。解决方案：通过在过硫酸发生浴12中的浓度为4mol / l的低浓度硫酸和温度为120℃的高温高浓度硫酸电解生成的过硫酸 ℃和96重量％的浓度供给到混合阀8.然后，将过硫酸和高温高浓度硫酸混合在混合阀8中，产生稀释热，以稀释高温高浓硫酸经过硫酸。过硫酸和高温高浓度硫酸的混合溶液的温度通过稀释热和热量急剧上升到高温高浓度硫酸的液温的高温高温高浓硫酸具有。温度上升到高温的混合溶液立即从混合阀8供给到喷嘴3，并从喷嘴3向晶片W的表面排出。（C）2008，JPO＆INPIT

2. 发明专利

JP2008060508A Substrate treating device and method 审中-公开
标题翻译：基板处理装置和方法
公开(公告)号：JP2008060508A
公开(公告)日：2008-03-13
申请号：JP2006238891
申请日：2006-09-04
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： UCHIDA HIROAKI , HAYASHI TOYOHIDE
IPC分类号： H01L21/304 , B08B3/02 , B08B5/04 , G02F1/13 , G02F1/1333 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating device and a substrate treatment method capable of preventing a treatment liquid from being scattered to the periphery of a substrate and treating the substrate using the treatment liquid.
SOLUTION: The treatment liquid held on the lower surface of a push-pull nozzle 15 is brought into contact with a wafer W being rotated. In this state, the push-pull nozzle 15 is allowed to reciprocate between a position including a rotation center C in the wafer W and the position of the peripheral section of the wafer W by the rocking of the rocking arm 14. The liquid-contacting position on the surface of the wafer W draws an arc trajectory and reciprocates, thus bringing the entire region on the surface of the wafer W into liquid-contact with a medicinal solution.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够防止处理液体散布到基板的周围并使用处理液处理基板的基板处理装置和基板处理方法。保护在推挽喷嘴15的下表面的处理液与被旋转的晶片W接触。在这种状态下，推挽喷嘴15能够通过摆动臂14的摆动在包括晶片W中的旋转中心C的位置和晶片W的周边部分的位置之间往复运动。液体接触在晶片W的表面上的位置产生电弧轨迹并往复运动，从而将晶片W的表面上的整个区域与药液进行液体接触。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008227386A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2008227386A
公开(公告)日：2008-09-25
申请号：JP2007066876
申请日：2007-03-15
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： UCHIDA HIROAKI
IPC分类号： H01L21/304 , G02F1/13 , G02F1/1333 , H01L21/027 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which prevents a process liquid from scattering over the surroundings of a substrate and can perform a process to the substrate by the process liquid.
SOLUTION: The substrate processing apparatus comprises an upper plate 3 and a lower plate 2 facing each other with a predetermined spacing apart from each other, and a ring member 4 placed along the periphery of the lower plate 2. The ring member 4 can hold a wafer W between the upper plate 3 and the lower plate 2 without allowing the respective plates 2, 3 to come into contact with the wafer W. In a state that the wafer W is placed in an almost airtight space surrounded by the respective plates 2, 3 and the ring member 4, the space is made liquidtight with the process liquid by discharging the process liquid from process liquid discharge ports 8A, 8B, so that the wafer W can be processed by the process liquid. Furthermore, the process liquid supplied into the space is exhausted in such a manner that the process liquid is pushed out from a process liquid exhaust port 31 formed in the ring member 4.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理装置，其防止处理液体在基板的周围散射，并且可以通过处理液体对基板执行处理。解决方案：基板处理装置包括彼此面对预定间隔的彼此面对的上板3和下板2，以及沿着下板2的周边放置的环件4.环件4 可以将晶片W保持在上板3和下板2之间，而不允许相应的板2,3与晶片W接触。在将晶片W放置在由相应的晶片W包围的几乎气密的空间中的状态下板2,3和环构件4，通过从处理液体排出口8A，8B排放处理液体，通过处理液体使空间保持液体密封，使得可以通过处理液体处理晶片W. 此外，供给到该空间的处理液体以从处于形成于环状部件4的处理液排出口31被推出的方式排出。（C）2008，JPO＆INPIT

4. 发明专利

JP2008091422A Substrate processor 审中-公开
标题翻译：基板处理器
公开(公告)号：JP2008091422A
公开(公告)日：2008-04-17
申请号：JP2006268048
申请日：2006-09-29
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： UCHIDA HIROAKI
IPC分类号： H01L21/304 , B08B3/04 , G02F1/13 , G02F1/1333 , G11B7/26 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processor for conducting processes on the front surface of a substrate using a processing liquid without splash of the processing liquid to the periphery of substrate. SOLUTION: The substrate processor 1 is provided with a push-pull chuck 2 for holding a wafer W in the non-contact state and a processing liquid reserving vessel 3 for reserving the processing liquid used for processes of the wafer W. Process can be conducted using the processing liquid to the front surface of wafer W without splash of the processing liquid to the periphery of the wafer W by moving downward the push-pull chuck 2 holding the wafer W, placing the chuck to the proximity of the processing liquid reserving vessel 3 reserving the processing liquid, and placing the front surface of wafer W in contact with the processing liquid reserved in the processing liquid reserving vessel 3. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于使用处理液在基板的前表面上进行处理的基板处理器，而不会将处理液溅到基板的周围。解决方案：基板处理器1设置有用于将晶片W保持在非接触状态的推拉卡盘2和用于保留用于晶片W的处理的处理液的处理液储存容器3。可以使用处理液体进行到晶片W的前表面，而不会通过向下移动保持晶片W的推拉卡盘2将处理液飞溅到晶片W的周边，将卡盘放置在处理附近储存处理液的储液容器3，将晶片W的前表面与处理液储存容器3中保留的处理液接触。（C）2008，JPO＆INPIT

5. 发明专利

JP2009105145A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2009105145A
公开(公告)日：2009-05-14
申请号：JP2007274035
申请日：2007-10-22
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： ANO SEIJI , UCHIDA HIROAKI , MAEKAWA NAOTADA
IPC分类号： H01L21/304 , G02F1/13 , G02F1/1333 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of uniformly performing processing using a treatment liquid to the entire region of the surface of a substrate. SOLUTION: An opposing surface 19 under the substrate of an upper plate 2 is allowed to oppose a wafer W held by a lower plate section 4. A conical recess 18 having the top at a position opposite to the center of the wafer W is formed on the opposing surface 19 above the substrate. The treatment liquid is supplied to an upper treatment space 41 sandwiched between the upper surface of the wafer W and the opposing surface 19 above the substrate of the upper plate 2, thus making the upper treatment space 41 liquid-tight by the treatment liquid. Since the upper treatment space 41 becomes gradually narrower from the center of the wafer W to the periphery, the speed of the treatment liquid is nearly equal in the entire region of the upper surface of the wafer W. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够使用处理液均匀地进行到基板表面的整个区域的处理的基板处理装置。解决方案：允许在上板2的基板下面的相对表面19与由下板部分4保持的晶片W相对。在顶部位于与晶片W的中心相对的位置处的锥形凹槽18 形成在基板上方的相对表面19上。处理液被供给到夹在晶片W的上表面和上板2的基板上方的相对面19之间的上部处理空间41，由此处理液体使上部处理空间41液体密封。由于上处理空间41从晶片W的中心向周边逐渐变窄，处理液的速度在晶片W的上表面的整个区域中几乎相等。（C） 2009年，JPO＆INPIT

6. 发明专利

JP2009105144A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2009105144A
公开(公告)日：2009-05-14
申请号：JP2007274034
申请日：2007-10-22
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： ANO SEIJI , UCHIDA HIROAKI , MAEKAWA NAOTADA
IPC分类号： H01L21/304 , G02F1/1333 , G11B5/84 , G11B7/26 , G11B11/105
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for uniformly performing processing using a treatment liquid to the entire region of one surface and the other surface of a substrate by removing gas staying in the liquid-tight space of the treatment liquid.
SOLUTION: While a wafer W is being held by a lower plate section 4, an opposing surface 9 under the substrate of the lower plate section 4 opposes the lower surface of the wafer. An upper plate 2 is arranged opposite to the wafer W. The treatment liquid is supplied to an upper treatment space 41 sandwiched between the upper surface of the wafer W and an opposing surface 19 above the substrate of the upper plate 2, thus making the upper treatment space 41 liquid-tight by the treatment liquid. The treatment liquid is supplied to a lower treatment space 42 sandwiched between the lower surface of the wafer W and the opposing surface 9 under the substrate of the lower plate section 4, thus making the lower treatment space 42 liquid-tight by the treatment liquid. The upper plate 2 and the lower plate section 4 are formed by hydrophilic quartz.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理装置，其通过除去滞留在处理液的液密空间中的气体而使用处理液均匀地进行到基板的一个表面和另一个表面的整个区域的处理。解决方案：当晶片W被下板部4保持时，下板部4的基板下方的相对面9与晶片的下表面相对。上板2与晶片W相对配置。处理液被供给到夹在晶片W的上表面和上板2的基板上方的相对面19之间的上处理空间41，治疗空间41由处理液液体密封。处理液被供给到夹在晶片W的下表面和下板部4的基板下方的相对面9之间的下处理空间42，由处理液使液面较低的处理空间42。上板2和下板部4由亲水石英形成。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008060299A Substrate treating device and method 审中-公开
标题翻译：基板处理装置和方法
公开(公告)号：JP2008060299A
公开(公告)日：2008-03-13
申请号：JP2006235016
申请日：2006-08-31
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： UCHIDA HIROAKI
IPC分类号： H01L21/304 , B08B3/02 , G03F1/82 , H01L21/306
CPC分类号： H01L21/67051
摘要： PROBLEM TO BE SOLVED: To provide a substrate treating device and a substrate treatment method capable of suppressing the scattering of a treatment liquid to the periphery of a substrate, and treating the substrate appropriately using the treatment liquid. SOLUTION: A push-pull plate 2 is opposingly arranged on the surface of the wafer W held by a spin chuck 10. The push-pull plate 2 has a plurality of discharge ports 22 and suction openings 23 on a lower surface 21. The treatment liquid is discharged from the discharge ports 22 toward the surface of the wafer W, and the discharged treatment liquid is sucked from the suction openings 23. The liquid film of the treatment liquid is formed on the push-pull plate 2 and is brought into contact with the surface of the wafer W, and the surface of the wafer W is treated. The treatment liquid discharged from the discharge ports 22 of the push-pull plate 2 is sucked from the suction openings 23 immediately after being discharged. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够抑制处理液在基板周围的飞散的基板处理装置和基板处理方法，并使用处理液适当地处理基板。解决方案：推拉板2相对设置在由旋转卡盘10保持的晶片W的表面上。推拉板2在下表面21上具有多个排出口22和抽吸开口23 处理液从排出口22朝向晶片W的表面排出，排出的处理液从吸入口23吸出。处理液的液膜形成在推挽板2上，为与晶片W的表面接触，并且处理晶片W的表面。从推拉板2的排出口22排出的处理液体在排出后立即从吸入口23吸出。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008034554A Substrate treating device 审中-公开
标题翻译：基板处理设备
公开(公告)号：JP2008034554A
公开(公告)日：2008-02-14
申请号：JP2006205127
申请日：2006-07-27
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： UCHIDA HIROAKI
IPC分类号： H01L21/304 , B08B3/02 , B08B3/04 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce the consumption of treatment liquid to facilitate coping with the difference of treatment times in a plurality of treatment processes and shorten a substrate conveying time between treatment liquid tanks. SOLUTION: The substrate treatment device is equipped with a chemical liquid tank 21, a rinse liquid tank 22, and a plurality of substrate retaining units 10. The chemical liquid 45 is stored in the tank main body 31 of the chemical liquid tank 21 under a status that the chemical liquid 45 is raised up by a surface tension from the opening 30 on the upper surface thereof. The rinse liquid 61 is stored in the tank main body 51 of the rinse liquid tank 22 under a status that the same is raised up from the opening 50 on the upper surface thereof. The level 45a of the chemical liquid 45 and the level 61a of the rinse liquid 61 are in the horizontal surface of the same height. The substrate retaining unit 10 retains the substrate W under a status that a main surface of the substrate or the treatment surface is faced downward and the treatment surface is contacted with the liquid levels 45a, 61a. The substrate retaining unit 10 is moved along the liquid levels 45a, 61a while retaining the status of contacting with the liquid. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了减少处理液的消耗以便于处理多个处理过程中的处理时间的差异并缩短处理液体箱之间的基板输送时间。解决方案：基板处理装置配备有药液槽21，漂洗液罐22和多个基板保持单元10.药液45储存在药液罐的罐主体31中 21，在化学液体45的上表面由开口30的表面张力升高的状态。冲洗液体61在从其上表面的开口50上升的状态下储存在冲洗液罐22的罐主体51中。化学液体45的水平面45a和冲洗液体61的水平面61a处于相同高度的水平面。衬底保持单元10将衬底W保持在基底的主表面或处理表面面向下并且处理表面与液面45a，61a接触的状态。衬底保持单元10沿着液面45a，61a移动，同时保持与液体接触的状态。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007335826A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2007335826A
公开(公告)日：2007-12-27
申请号：JP2006260619
申请日：2006-09-26
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： HIROE TOSHIRO , UCHIDA HIROAKI
IPC分类号： H01L21/304 , B08B3/02 , H01L21/027 , H01L21/306
CPC分类号： H01L21/67051 , H01L21/67017 , Y10S134/902
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of applying processing to a processing object surface by processing liquid, while maintaining the processing object surface of a substrate in a non-contact state. SOLUTION: There are provided a lower plate 2 disposed in opposition to a lower surface of a wafer W, and an upper plate 3 disposed in opposition to an upper surface of the wafer W. A plurality of discharge ports 16 and a plurality of suction ports 17 are formed on the lower plate 2. When the processing liquid is sucked from the suction ports 17 formed in the lower plate 2 of each discharge port 16, while discharging the processing liquid from the discharge port 16, a flow of the processing liquid is formed between the lower plate 2 and the surface of the wafer W, and by the flow of the processing liquid, the surface of the wafer W can be sucked and held in a non-contact state with a prescribed interval between the wafer W and the lower plate 2. At this time, the processing liquid is brought into contact with the surface of the wafer W, and the processing by the processing liquid is applied to the surface of the wafer W. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过处理液体对处理对象物表面进行处理，同时保持基板的处理对象面处于非接触状态的基板处理装置。解决方案：设置有与晶片W的下表面相对设置的下板2和与晶片W的上表面相对设置的上板3.多个排出口16和多个吸入口17形成在下板2上。当从形成在每个排出口16的下板2中的吸入口17吸入处理液体时，在从排出口16排出处理液的同时，在下板2和晶片W的表面之间形成处理液，通过处理液的流动，晶片W的表面能够以晶片的规定间隔被非接触状态地保持在非接触状态 W和下板2.此时，处理液与晶片W的表面接触，并且处理液的处理被施加到晶片W的表面。版权所有（C））2008，JPO＆INPIT

10. 发明专利

JP2009124041A Substrate processing device 审中-公开
标题翻译：基板处理装置
公开(公告)号：JP2009124041A
公开(公告)日：2009-06-04
申请号：JP2007298350
申请日：2007-11-16
申请人： Dainippon Screen Mfg Co Ltd , 大日本スクリーン製造株式会社
发明人： MAEKAWA NAOTADA , UCHIDA HIROAKI , ANO SEIJI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device wherein all of a plurality of processing chambers are made compact in a laminating direction. SOLUTION: A first processing chamber 10, a second processing chamber 20 and a third processing chamber 30 are laminated in this order from the bottom side, in a housing space inside of a housing 2. The second processing chamber 20 is laminated over the first processing chamber 10 with a first lid 11 between. The first lid 11 and the second processing chamber 20 relatively move up and down with respect to the first processing chamber 10 in an integrated manner. The third processing chamber 30 is laminated above the second processing chamber 20 with a second lid 21 between. The second lid 21 and the third processing chamber 30 relatively move up and down with respect to the second processing chamber 20 in an integrated manner. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中所有多个处理室在层叠方向上被制成紧凑的基板处理装置。解决方案：第一处理室10，第二处理室20和第三处理室30在壳体2的内部的壳体空间中从底侧开始依次层叠。第二处理室20层压在第一处理室10，其间具有第一盖11。第一盖11和第二处理室20相对于第一处理室10以一体的方式相对上下移动。第三处理室30层叠在第二处理室20的上方，其间具有第二盖21。第二盖21和第三处理室30以一体的方式相对于第二处理室20相对上下移动。版权所有（C）2009，JPO＆INPIT

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