专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09337383B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09337383B2
公开(公告)日：2016-05-10
申请号：US13404615
申请日：2012-02-24
申请人： Dae Seob Han , Yong Tae Moon , Jong-In Shim
发明人： Dae Seob Han , Yong Tae Moon , Jong-In Shim
IPC分类号： H01L33/06 , H01L33/04 , H01L33/32
CPC分类号： H01L33/06 , F21K9/23 , F21V29/507 , F21V29/83 , F21Y2115/10 , H01L33/04 , H01L33/32 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
摘要翻译：公开了一种包括第一导电类型半导体层的发光器件; 设置在所述第一导电型半导体层上的第二导电型半导体层; 以及设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层，所述有源层包括量子阱层和量子势垒层，其中每个所述量子阱势垒层包括第一势垒层和设置在所述第二势垒层并且所述第二阻挡层的能量带隙大于所述量子阱层的能量带隙，并且小于所述第一阻挡层的能量带隙。

2. 发明申请

US20120319079A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120319079A1
公开(公告)日：2012-12-20
申请号：US13404615
申请日：2012-02-24
申请人： Dae Seob HAN , Yong Tae Moon , Jong-In Shim
发明人： Dae Seob HAN , Yong Tae Moon , Jong-In Shim
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , F21K9/23 , F21V29/507 , F21V29/83 , F21Y2115/10 , H01L33/04 , H01L33/32 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
摘要翻译：公开了一种包括第一导电类型半导体层的发光器件; 设置在所述第一导电型半导体层上的第二导电型半导体层; 以及设置在所述第一导电类型半导体层和所述第二导电类型半导体层之间的有源层，所述有源层包括量子阱层和量子势垒层，其中每个所述量子阱势垒层包括第一势垒层和设置在所述第二势垒层并且所述第二阻挡层的能量带隙大于所述量子阱层的能量带隙，并且小于所述第一阻挡层的能量带隙。

3. 发明授权

US08600705B2 Method and apparatus for measuring internal quantum well efficiency of LED 失效
标题翻译：测量LED内部量子阱效率的方法和装置
公开(公告)号：US08600705B2
公开(公告)日：2013-12-03
申请号：US12905876
申请日：2010-10-15
申请人： Jong-In Shim , Hyunsung Kim
发明人： Jong-In Shim , Hyunsung Kim
IPC分类号： G06F3/023 , G06F3/01 , G06F3/06 , G06F3/14
CPC分类号： G01N21/6489 , G01N2201/062
摘要： Provided is a method and apparatus for measuring efficiency of an optical device. In the method, a power of emission light from the optical device is calculated by irradiating an excitation stimulus on the optical device. A power of a reference excitation stimulus at which a variation of recombination coefficients in a quantum well of the optical device with respect to a variation of carrier concentration in the quantum well of the optical device becomes minimum is extracted. An internal quantum efficiency of the optical device at the power of the reference excitation stimulus is calculated. An internal quantum efficiency of the optical device at powers of various excitation stimuli is calculated from the internal quantum efficiency of the optical device at the power of the reference excitation stimulus.
摘要翻译：提供了一种用于测量光学装置的效率的方法和装置。在该方法中，通过在光学装置上照射激发刺激来计算来自光学装置的发射光的功率。提取参考激励刺激的功率，其中相对于光学器件的量子阱中的载流子浓度的变化，光学器件的量子阱中的复合系数的变化变得最小。计算参考激励刺激功率下的光学器件的内部量子效率。在各种激发刺激的功率下，光器件的内部量子效率由光学器件的内部量子效率计算。

4. 发明授权

US5614436A Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same 失效
标题翻译：多量子阱分布反馈半导体激光器件及其制造方法
公开(公告)号：US5614436A
公开(公告)日：1997-03-25
申请号：US400568
申请日：1995-03-08
申请人： Jong-In Shim , Mitsuhiro Kitamura
发明人： Jong-In Shim , Mitsuhiro Kitamura
IPC分类号： H01S5/00 , H01S5/06 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/06258 , H01S5/12 , H01S5/227 , H01S5/1057 , H01S5/1243 , H01S5/22 , H01S5/2272 , H01S5/34306 , H01S5/34313 , Y10S148/095
摘要： A distributed feedback semiconductor laser device having a semiconductor substrate, a bottom electrode formed on a bottom surface of the substrate, a corrugation-shaped grating formed on a top surface of the substrate, an active waveguide layer whose energy band gap profile and whose light propagation constant are varied along cavity length direction of the laser device, the active waveguide layer being formed over the corrugation-shaped grating, a clad layer formed to cover the active waveguide layer, and a top electrode formed on a top of the clad layer. The active waveguide layer is grown by a selective metal organic vapor phase epitaxy with use of slender insulation masks having a variation in width, the slender insulation masks being arranged at both sides of an area on which the active waveguide layer is grown.
摘要翻译：一种具有半导体衬底的分布式反馈半导体激光器件，形成在衬底的底表面上的底部电极，形成在衬底顶表面上的波纹状光栅，其能带隙分布及其光传播的有源波导层常数沿着激光器件的腔长度方向变化，有源波导层形成在波纹状光栅上，形成为覆盖有源波导层的覆盖层和形成在覆盖层顶部上的顶部电极。有源波导层通过选择性金属有机气相外延生长，使用具有宽度变化的细长绝缘掩模，细长绝缘掩模布置在其上生长有源波导层的区域的两侧。

5. 发明申请

US20070230533A1 Laser module 审中-公开
标题翻译：激光模块
公开(公告)号：US20070230533A1
公开(公告)日：2007-10-04
申请号：US11642262
申请日：2006-12-20
申请人： Byeong-Hoon Park , Jong-In Shim
发明人： Byeong-Hoon Park , Jong-In Shim
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/0265 , G02F1/37 , H01S5/0092 , H01S5/1014 , H01S5/12 , H01S5/22
摘要： Disclosed is a laser module for generating laser light without a wavelength shift during a direct modulation of high frequency. The laser module includes: a laser light source for generating a first light; a nonlinear crystal for secondary harmonic generation for wavelength-converting the first light into a second light; and a multi-mode interferometer placed between the laser light source and the secondary harmonic generation, for modulating the intensity of the first light.
摘要翻译：公开了一种用于在高频率的直接调制期间产生没有波长漂移的激光的激光模块。激光模块包括：用于产生第一光的激光光源; 用于将第一光波长转换成第二光的用于二次谐波产生的非线性晶体; 以及放置在激光光源和二次谐波产生之间的多模式干涉仪，用于调制第一光的强度。

6. 发明授权

US5450437A Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same 失效
标题翻译：多量子阱分布反馈半导体激光器件及其制造方法
公开(公告)号：US5450437A
公开(公告)日：1995-09-12
申请号：US171415
申请日：1993-12-22
申请人： Jong-In Shim , Mitsuhiro Kitamura
发明人： Jong-In Shim , Mitsuhiro Kitamura
IPC分类号： H01S5/00 , H01S5/06 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/19 , H01S3/08
CPC分类号： B82Y20/00 , H01S5/06258 , H01S5/12 , H01S5/227 , H01S5/1057 , H01S5/1243 , H01S5/22 , H01S5/2272 , H01S5/34306 , H01S5/34313 , Y10S148/095
摘要： A distributed feedback semiconductor laser device having a semiconductor substrate, a bottom electrode formed on a bottom surface of the substrate, a corrugation-shaped grating formed on a top surface of the substrate, an active waveguide layer whose energy band gap profile and whose light propagation constant are varied along a cavity length direction of the laser device, the active waveguide layer being formed over the corrugation-shaped grating, a clad layer formed to cover the active waveguide layer, and a top electrode formed on a top of the clad layer. The active waveguide layer is grown by a selective metal organic vapor phase epitaxy with use of slender insulation masks having a variation in width, the slender insulation masks being arranged at both sides of an area on which the active waveguide layer is grown.
摘要翻译：一种具有半导体衬底的分布式反馈半导体激光器件，形成在衬底的底表面上的底部电极，形成在衬底顶表面上的波纹状光栅，其能带隙分布及其光传播的有源波导层常数沿着激光器件的腔长度方向变化，有源波导层形成在波纹状光栅上，形成为覆盖有源波导层的覆盖层和形成在覆盖层顶部上的顶部电极。有源波导层通过选择性金属有机气相外延生长，使用具有宽度变化的细长绝缘掩模，细长绝缘掩模布置在其上生长有源波导层的区域的两侧。

7. 发明授权

US07369588B2 Broad-band optical semiconductor device and a method for manufacturing the same 失效
标题翻译：宽带光学半导体器件及其制造方法
公开(公告)号：US07369588B2
公开(公告)日：2008-05-06
申请号：US11346974
申请日：2006-02-03
申请人： Seong-Taek Hwang , Jong-In Shim , Dae-Kwang Jung
发明人： Seong-Taek Hwang , Jong-In Shim , Dae-Kwang Jung
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S5/0261 , H01S5/0425 , H01S5/0612 , H01S5/1096 , H01S2301/04 , H01S2301/173
摘要： Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer.
摘要翻译：公开了一种根据电流的应用提供光学增益或光学损耗的光学半导体器件。光学半导体器件包括：下覆盖层; 设置在下包层上的有源层，所述有源层根据载流子的注入而产生光学增益或光损耗; 设置在有源层上的上覆层，上覆盖层用于与下包层一起配合活性层中的光; 以及温度控制部件，用于以有源层的温度根据有源层中的位置而变化的方式控制有源层沿着光传播轴的温度分布。

8. 发明申请

US20060171430A1 Broad-band optical semiconductor device and a method for manufacturing the same 失效
标题翻译：宽带光学半导体器件及其制造方法
公开(公告)号：US20060171430A1
公开(公告)日：2006-08-03
申请号：US11346974
申请日：2006-02-03
申请人： Seong-Taek Hwang , Jong-In Shim , Dae-Kwang Jung
发明人： Seong-Taek Hwang , Jong-In Shim , Dae-Kwang Jung
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S5/0261 , H01S5/0425 , H01S5/0612 , H01S5/1096 , H01S2301/04 , H01S2301/173
摘要： Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer.
摘要翻译：公开了一种根据电流的应用提供光学增益或光学损耗的光学半导体器件。光学半导体器件包括：下覆盖层; 设置在下包层上的有源层，所述有源层根据载流子的注入而产生光学增益或光损耗; 设置在有源层上的上覆层，上覆盖层用于与下包层一起配合活性层中的光; 以及温度控制部件，用于以有源层的温度根据有源层中的位置而变化的方式控制有源层沿着光传播轴的温度分布。

9. 发明授权

US06771681B2 Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US06771681B2
公开(公告)日：2004-08-03
申请号：US10190214
申请日：2002-07-05
申请人： Dong-Soo Bang , Dong-Hoon Jang , Jong-In Shim
发明人： Dong-Soo Bang , Dong-Hoon Jang , Jong-In Shim
IPC分类号： H01S3085
CPC分类号： H01S5/06258 , H01S5/026 , H01S5/1215 , H01S5/20 , H01S5/50
摘要： A distributed feedback semiconductor laser and a method of manufacture includes first and second clad layers having predetermined refractive indexes that are formed on a semiconductor substrate. A guide layer propagates light between the first and second clad layers. An oscillating clad layer oscillates light at a predetermined wavelength and an amplifying clad layer amplifies the light with a predetermined gain between the first clad layer and the guide layer. The distributed feedback semiconductor laser is divided into a laser oscillation section including the oscillating clad layer and a laser amplification section including the amplifying active layer. First and second gratings are formed on the lower surface of the guide layer in the laser oscillation section and in the laser amplification section, respectively.
摘要翻译：分布式反馈半导体激光器和制造方法包括形成在半导体基板上的具有预定折射率的第一和第二覆层。引导层在第一和第二覆盖层之间传播光。振荡包层以预定波长振荡光，并且放大包层以第一包层和引导层之间的预定增益放大光。分布式反馈半导体激光器被分为包括振荡包层的激光振荡部分和包括放大有源层的激光放大部分。第一和第二光栅分别形成在激光振荡部分和激光放大部分中的引导层的下表面上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式