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1. 发明申请

US20050198912A1 Polishing slurry, method of producing same, and method of polishing substrate 有权
标题翻译：抛光浆料，其制造方法以及抛光底物的方法
公开(公告)号：US20050198912A1
公开(公告)日：2005-09-15
申请号：US11078538
申请日：2005-03-11
申请人： Dae Kim , Seok Hong , Jae Jeon , Ho Kim , Hyun Park , Un Paik , Jae Park , Yong Kim
发明人： Dae Kim , Seok Hong , Jae Jeon , Ho Kim , Hyun Park , Un Paik , Jae Park , Yong Kim
IPC分类号： B24D3/02 , C08J3/14 , H01L21/304
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.
摘要翻译：本文公开了用于化学机械抛光的抛光浆料。抛光浆料包括抛光颗粒，其具有包括分离的精细和大的抛光颗粒峰的粒度分布。抛光浆料还包括中值粒径为50-150nm的抛光颗粒。本发明提供了具有最佳抛光粒度的浆料，其中抛光粒度被控制，并且通过改变浆料的生产条件，可用于制备具有精细设计规则的半导体。本发明还提供了研磨浆料及其制造方法，其中通过控制抛光粒度分布来确保理想的CMP去除速率和抑制刮痕，以及抛光基材的方法。

2. 发明申请

US20050252092A1 Slurry for CMP and method of polishing substrate using same 有权
标题翻译：用于CMP的浆料和使用其的抛光衬底的方法
公开(公告)号：US20050252092A1
公开(公告)日：2005-11-17
申请号：US11127441
申请日：2005-05-11
申请人： Dae Kim , Seok Hong , Jae Jeon , Ho Kim , Hyun Park , Un Paik , Jae Park , Yong Kim
发明人： Dae Kim , Seok Hong , Jae Jeon , Ho Kim , Hyun Park , Un Paik , Jae Park , Yong Kim
IPC分类号： B24B1/00 , B24C1/00 , B24D3/02 , C09G1/02 , C09K3/14 , H01L21/3105
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.
摘要翻译：本文公开了抛光浆料及其制备方法。抛光浆料在氧化物层的研磨速度与STI工艺的CMP中使用的氮化物层的研磨速度方面具有高选择性，该制造方法对于制造具有256兆D-RAM以上的设计规则的超高度集成半导体是必不可少的，例如，0.13mum以下的设计规则。用于预处理抛光颗粒的方法和装置，分散装置和操作分散装置的方法，添加化学添加剂和添加量的方法以及用于转移样品的装置被适当地用于产生高性能纳米二氧化铈浆料对于生产0.13毫米或更小的超高度集成半导体的工艺，特别是STI工艺。

3. 发明申请

US20060032149A1 Polishing slurry, method of producing same, and method of polishing substrate 审中-公开
标题翻译：抛光浆料，其制造方法以及抛光底物的方法
公开(公告)号：US20060032149A1
公开(公告)日：2006-02-16
申请号：US11193094
申请日：2005-07-28
申请人： Dae Kim , Seok Hong , Jae Jeon , Un Paik , Jea Park , Yong Kim
发明人： Dae Kim , Seok Hong , Jae Jeon , Un Paik , Jea Park , Yong Kim
IPC分类号： C09K3/14 , B24D3/02 , C09C1/68
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C01P2006/22 , C09G1/02 , C09K3/1463
摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
摘要翻译：公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光衬底的方法。

4. 发明申请

US20060156635A1 Abrasive particles, polishing slurry, and producing method thereof 审中-公开
标题翻译：磨料颗粒，抛光浆料及其制备方法
公开(公告)号：US20060156635A1
公开(公告)日：2006-07-20
申请号：US11305535
申请日：2005-12-16
申请人： Dae Kim , Seok Hong , Yong Kim , Dong Kim , Myoung Suh , Jea Park , Un Paik
发明人： Dae Kim , Seok Hong , Yong Kim , Dong Kim , Myoung Suh , Jea Park , Un Paik
IPC分类号： C09K3/14
CPC分类号： C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.
摘要翻译：本文公开了一种用于STI CMP工艺的抛光浆料，其是制造256兆D-RAM以上的超高度集成半导体（设计规则为0.13μm或更小）所必需的，其可以以高去除速度抛光晶片，具有与氮化物相比，氧化物的去除选择性优异。研磨浆料可以应用于制造超高度集成半导体的过程中所需的各种图案，因此优异的去除速度，去除选择性和晶片内不均匀性（WIWNU），这表明去除均匀性，以及最小的发生微划痕，可以放心。

5. 发明申请

US20070131971A1 Hetero junction bipolar transistor and method of manufacturing the same 失效
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US20070131971A1
公开(公告)日：2007-06-14
申请号：US11634614
申请日：2006-12-06
申请人： Yong Kim , Eun Nam , Ho Kim , Sang Lee , Dong Jun , Hong Lee , Seon Hong , Dong Kim , Jong Lim , Myoung Oh
发明人： Yong Kim , Eun Nam , Ho Kim , Sang Lee , Dong Jun , Hong Lee , Seon Hong , Dong Kim , Jong Lim , Myoung Oh
IPC分类号： H01L31/00
CPC分类号： H01L29/7371 , H01L29/0817 , H01L29/41708 , H01L29/66318
摘要： Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insulating compound substrate, a pair of collector electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the sub-collector layer, a collector layer and a base layer disposed between the collector electrodes, a pair of base electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the base layer, an emitter layer stack disposed between the base electrodes, and an emitter electrode that is formed on the emitter layer stack, and includes a portion having a line width wider than the line width of the emitter layer stack, wherein both sidewalls of the emitter electrode are respectively aligned with inner walls of the pair of base electrodes, and sidewalls of the collector layer and the base layer are located between outer sidewalls of the pair of base electrodes of the pair of base electrodes.
摘要翻译：提供了可以提高数据处理速度的异质结双极晶体管（HBT）和制造异质结双极晶体管的方法。 HBT包括半绝缘复合基板，形成在半绝缘复合基板上的副集电极层，在副集电极层的预定部分上彼此隔开预定距离设置的一对集电极，集电极层和设置在集电极之间的基极层，在基极层的预定部分上彼此隔开预定距离设置的一对基底电极，设置在基极之间的发射极层叠层和发射极电极，形成在发射极层堆叠上，并且包括具有比发射极层堆叠的线宽宽的线宽的部分，其中发射极电极的两个侧壁分别与一对基底电极的内壁对齐，并且侧壁集电极层和基极层位于该对基极的一对基极的外侧壁之间。

6. 发明申请

US20070155033A1 Method of manufacturing light emitting diode package 审中-公开
标题翻译：制造发光二极管封装的方法
公开(公告)号：US20070155033A1
公开(公告)日：2007-07-05
申请号：US11649914
申请日：2007-01-05
申请人： Yong Kim , Seog Choi , Yong Kim , Sang Shin
发明人： Yong Kim , Seog Choi , Yong Kim , Sang Shin
IPC分类号： H01L21/00
CPC分类号： B29C41/12 , B29C41/20 , B29C41/36 , B29C41/50 , B29L2011/00 , H01L33/52 , H01L2224/48091 , H01L2924/00014
摘要： A method of manufacturing an LED package. The method includes dispensing a transparent resilient resin on an LED package body and overturning an entire structure to form an LED lens integrally provided to the LED package body. This prevents extra processes and costs incurring from forming intermediate layers and obviates degradation in reliability and light extraction efficiency due to additional interfaces.
摘要翻译：一种制造LED封装的方法。该方法包括将透明弹性树脂分配在LED封装主体上并翻转整个结构以形成一体地提供到LED封装体的LED透镜。这防止了由于附加界面而形成中间层而导致额外的工艺和成本，并且消除了可靠性和光提取效率的降低。

7. 发明申请

US20060121815A1 Method of manufacturing barrier ribs for pdp by capillary molding of paste and paste compositions therefor 失效
标题翻译：通过毛细管成型用于制造pdp隔壁的糊剂和糊剂组合物的方法
公开(公告)号：US20060121815A1
公开(公告)日：2006-06-08
申请号：US10521196
申请日：2003-07-15
申请人： Yong Kim , Yong Kim , Sung Cho
发明人： Yong Kim , Yong Kim , Sung Cho
IPC分类号： H01J9/24
CPC分类号： H01J9/242 , H01J11/12 , H01J11/36
摘要： Disclosed is a method of manufacturing rear plate barrier ribs for Plasma Display Panel (PDP), which includes the steps of: forming barrier ribs by infiltrating the barrier rib forming paste into grooves of a mold by using the capillary phenomenon, and then sintering the paste. This method causes rare environmental pollution, enables to make barrier ribs having fine and complex shapes and reduces material costs required for the barrier rib. Thus, the method may improve quality of PDP and reduce manufacture costs of the rear plate.
摘要翻译：公开了一种制造等离子体显示面板（PDP）的后板阻挡肋的方法，其包括以下步骤：通过使用毛细管现象将隔壁形成膏渗透到模具的凹槽中，然后烧结浆料。这种方法造成罕见的环境污染，能够形成具有精细和复杂形状的隔肋，并且减少隔壁所需的材料成本。因此，该方法可以提高PDP的质量并降低后板的制造成本。

8. 发明申请

US20070063214A1 Light emitting diode package and method for manufacturing the same 审中-公开
标题翻译：发光二极管封装及其制造方法
公开(公告)号：US20070063214A1
公开(公告)日：2007-03-22
申请号：US11524278
申请日：2006-09-21
申请人： Yong Kim , Seog Choi , Chang Lim , Yong Kim
发明人： Yong Kim , Seog Choi , Chang Lim , Yong Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/58
摘要： The invention relates to a light emitting diode package that can prevent deterioration of phosphor and a method of manufacturing the same. The light emitting diode package includes a package body having a recessed part, a light emitting diode chip mounted on a floor surface of the recessed part and a lens structure disposed on an upper surface of the package body, apart from the light emitting diode chip. Phosphor is dispersed in at least a part of the lens structure.
摘要翻译：本发明涉及能够防止荧光体劣化的发光二极管封装及其制造方法。发光二极管封装包括具有凹部的封装主体，安装在凹部的地板表面上的发光二极管芯片和设置在封装体的上表面上的透镜结构，与发光二极管芯片分开。荧光体分散在透镜结构的至少一部分中。

9. 发明申请

US20050156522A1 Method of manufacturing barrier ribs for pdp by etching of thick film using water-based solution and compositions therefor 审中-公开
标题翻译：通过使用水溶液蚀刻厚膜及其组合物来制造pdp隔壁的方法
公开(公告)号：US20050156522A1
公开(公告)日：2005-07-21
申请号：US10510036
申请日：2002-04-08
申请人： Yong Kim , Jin Hwang , Yong Kim
发明人： Yong Kim , Jin Hwang , Yong Kim
IPC分类号： H01J9/24 , H01J11/12 , H01J11/36 , H01J17/49
CPC分类号： H01J9/242 , H01J11/12 , H01J11/36 , H01J2211/366
摘要： Disclosed is a method of manufacturing barrier ribs for a Plasma Display Panel (PDP), which includes the steps of forming a thick film (or, “green tape”) for barrier ribs on a glass or metal substrate by using composition for forming the barrier ribs, which contains water soluble components and solvent soluble components together a binder; forming a protective pattern film partially soluble or insoluble to the water based solution on the thick film; etching the thick film into a barrier rib shape by using solution or mixed solution containing ceramic powder as an etching accelerator, and sintering the etched thick film. This method causes rare environmental pollution, enables to make barrier ribs having fine and complex shapes and reduces material costs required for the barrier rib. Thus, the method may improve quality of DPD and reduce manufacture costs of the rear plate.
摘要翻译：公开了一种制造用于等离子体显示面板（PDP）的隔壁的方法，其包括以下步骤：通过使用用于形成屏障的组合物在玻璃或金属基板上形成用于隔壁的厚膜（或“生胶条”）肋骨，其含有水溶性成分和溶剂可溶性成分在一起的粘合剂; 在厚膜上形成部分溶解或不溶于水基溶液的保护性图案膜; 通过使用含有陶瓷粉末作为蚀刻加速剂的溶液或混合溶液将厚膜蚀刻成隔壁形状，并烧结蚀刻的厚膜。这种方法造成罕见的环境污染，能够形成具有精细和复杂形状的隔肋，并且减少隔壁所需的材料成本。因此，该方法可以提高DPD的质量并降低后板的制造成本。

10. 发明申请

US20060270078A1 Method of fabricating light emitting diode package 有权
标题翻译：制造发光二极管封装的方法
公开(公告)号：US20060270078A1
公开(公告)日：2006-11-30
申请号：US11439189
申请日：2006-05-24
申请人： Yong Kim , Seog Choi , Hyoung Kim , Yong Kim
发明人： Yong Kim , Seog Choi , Hyoung Kim , Yong Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/52 , H01L2224/48091 , H01L2224/48227 , Y10S438/974 , H01L2924/00014
摘要： The invention relates to an LED package and proposes a method of fabricating an LED package including steps of providing a package substrate having a mounting area of an LED and a metal pattern to be connected with the LED, and plasma-treating the package substrate to reform at least a predetermined surface area of the package substrate where a resin-molded part will be formed. The method also includes mounting the LED on the mounting area on the substrate package and electrically connecting the LED with the metal pattern, and forming the resin-molded part in the mounting area of the LED to seal the LED package.
摘要翻译：本发明涉及一种LED封装，并提出了一种制造LED封装的方法，包括以下步骤：提供具有LED的安装区域和与LED连接的金属图案的封装基板，以及等离子体处理封装基板以改造至少形成将形成树脂成型部件的封装基板的预定表面积。该方法还包括将LED安装在基板封装上的安装区域上，并将LED与金属图形电连接，并在LED的安装区域中形成树脂模制部件以密封LED封装。

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