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1. 发明申请

US20060032149A1 Polishing slurry, method of producing same, and method of polishing substrate 审中-公开
标题翻译：抛光浆料，其制造方法以及抛光底物的方法
公开(公告)号：US20060032149A1
公开(公告)日：2006-02-16
申请号：US11193094
申请日：2005-07-28
申请人： Dae Kim , Seok Hong , Jae Jeon , Un Paik , Jea Park , Yong Kim
发明人： Dae Kim , Seok Hong , Jae Jeon , Un Paik , Jea Park , Yong Kim
IPC分类号： C09K3/14 , B24D3/02 , C09C1/68
CPC分类号： B82Y30/00 , C01F17/0043 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C01P2006/22 , C09G1/02 , C09K3/1463
摘要： Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
摘要翻译：公开了一种抛光浆料，特别是用于化学机械抛光的浆料，其用于化学机械抛光工艺以使半导体层压体变平。更具体地说，本发明提供一种制备浆料的方法，该方法对于在制造256兆D-RAM或更高的超高度集成半导体所需的浅沟槽隔离CMP工艺中，对用作阻挡膜的氮化物层具有高的去除选择性（设计规则为0.13μm以下），并且减少了在平坦化表面上的划痕的发生，以及使用其抛光衬底的方法。

2. 发明申请

US20060156635A1 Abrasive particles, polishing slurry, and producing method thereof 审中-公开
标题翻译：磨料颗粒，抛光浆料及其制备方法
公开(公告)号：US20060156635A1
公开(公告)日：2006-07-20
申请号：US11305535
申请日：2005-12-16
申请人： Dae Kim , Seok Hong , Yong Kim , Dong Kim , Myoung Suh , Jea Park , Un Paik
发明人： Dae Kim , Seok Hong , Yong Kim , Dong Kim , Myoung Suh , Jea Park , Un Paik
IPC分类号： C09K3/14
CPC分类号： C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.
摘要翻译：本文公开了一种用于STI CMP工艺的抛光浆料，其是制造256兆D-RAM以上的超高度集成半导体（设计规则为0.13μm或更小）所必需的，其可以以高去除速度抛光晶片，具有与氮化物相比，氧化物的去除选择性优异。研磨浆料可以应用于制造超高度集成半导体的过程中所需的各种图案，因此优异的去除速度，去除选择性和晶片内不均匀性（WIWNU），这表明去除均匀性，以及最小的发生微划痕，可以放心。

3. 发明申请

US20070075291A1 CMP Slurry, Preparation Method Thereof and Method of Polishing Substrate Using the Same 有权
标题翻译： CMP浆料，其制备方法和使用其的抛光基材的方法
公开(公告)号：US20070075291A1
公开(公告)日：2007-04-05
申请号：US11421965
申请日：2006-06-02
申请人： Un Paik , Jea Park , Sang Kim , Ye Kim , Myoung Suh , Dae Kim
发明人： Un Paik , Jea Park , Sang Kim , Ye Kim , Myoung Suh , Dae Kim
IPC分类号： C09K13/00 , C03C15/00 , H01L21/461 , B44C1/22 , C23F1/00
CPC分类号： C23F3/04 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/3212
摘要： A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.
摘要翻译：提供包括抛光颗粒的CMP浆料，抛光颗粒包含有机改性的胶体二氧化硅。另外，提供了制备CMP浆料的方法，包括以下步骤：制备包含有机改性二氧化硅的抛光颗粒; 将抛光颗粒转化成水状态; 并向抛光颗粒中加入纯水，亲水性添加剂和分散剂。抛光颗粒可以使用溶胶 - 凝胶法合成。根据本发明，可以制备具有优异抛光性能的浆料，其中改变胶体二氧化硅的表面性能以控制抛光颗粒的物理性质，并且可以确保所需的CMP去除速率同时最小化划痕的发生。

4. 发明申请

US20060246723A1 Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition 审中-公开
标题翻译：用于化学机械抛光的浆料组合物，使用其的半导体元件的表面的平面化方法以及用于控制浆料组成的选择比的方法
公开(公告)号：US20060246723A1
公开(公告)日：2006-11-02
申请号：US10540992
申请日：2003-12-25
申请人： Jea Park , Un Paik , Jin Park , Takeo Katoh
发明人： Jea Park , Un Paik , Jin Park , Takeo Katoh
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for controlling a selection ratio of a chemical-mechanical-polishing slurry composition for polishing and ablating an oxide layer selectively in relation to a nitride layer, the method includes: a step of confirming a polishing-rate selection ratio of an oxide layer to a nitride layer of a chemical-mechanical-polishing slurry composition which includes ceria polishing particles, a dispersing agent, and an anionic additive, while a concentration of the anionic additive is changed; and a step of adjusting the concentration of the anionic additive to attain a desired selection ratio of the slurry composition, on the basis of the confirmed polishing-rate selection ratio, thereby controlling the selection ratio of the slurry composition.
摘要翻译：一种用于控制用于相对于氮化物层选择性地研磨和消融氧化物层的化学机械抛光浆料组合物的选择比率的方法，所述方法包括：将氧化物层的研磨速率选择比确定为化学机械抛光浆料组合物的氮化物层，其中阴离子添加剂的浓度改变，其包括二氧化铈抛光颗粒，分散剂和阴离子添加剂; 以及基于确定的研磨速度选择比，调整阴离子添加剂的浓度以达到浆料组合物的期望选择比例的步骤，从而控制浆料组合物的选择比。

5. 发明申请

US20070158309A1 Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same 有权
标题翻译：用于补偿纳米形貌效果的化学机械抛光的浆料组合物及使用其的半导体器件的平坦化表面的方法
公开(公告)号：US20070158309A1
公开(公告)日：2007-07-12
申请号：US10556377
申请日：2004-05-11
申请人： Jea Park
发明人： Jea Park
IPC分类号： C09K13/00 , C03C15/00 , H01L21/461 , B44C1/22
CPC分类号： C09G1/02 , H01L21/31053
摘要： A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.
摘要翻译：公开了一种能够补偿晶片表面上存在的纳米形貌效应的用于化学机械抛光的浆料组合物，以及用于平面化利用其的半导体器件的表面的方法。本发明的浆料组合物旨在补偿在晶片表面形成的氧化物层的化学机械抛光过程中的纳米形貌作用，并且包含磨料颗粒和添加剂，其中磨料颗粒的尺寸和浓度将添加剂控制在预定范围内，以便在化学机械抛光处理之后控制氧化物层的厚度（OTD）低于一定水平的偏差。

6. 发明申请

US20060118935A1 Laminated semiconductor substrate process for producing the same 有权
标题翻译：用于制造其的层叠半导体衬底工艺
公开(公告)号：US20060118935A1
公开(公告)日：2006-06-08
申请号：US10550761
申请日：2004-04-02
申请人： Eiji Kamiyama , Takeo Katoh , Jea Park
发明人： Eiji Kamiyama , Takeo Katoh , Jea Park
IPC分类号： H01L21/30 , H01L23/06
CPC分类号： H01L21/30608 , H01L21/76254
摘要： The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 μm with a solution having an etching effect on a surface of an active layer of a bonded substrate which has been prepared by bonding two substrates after one of them having been ion-implanted and then cleaving off a portion thereof by heat treatment. SC-1 solution is used for performing the etching. A polishing, a hydrogen annealing and a sacrificial oxidation may be respectively applied to the active layer before and/or after the etching. The film thickness of this active layer can be made uniform over the entire surface area and the surface roughness of the active layer can be reduced as well.
摘要翻译：本发明提供了一种键合衬底，其通过用键合衬底的有源层的表面上具有蚀刻效果的溶液进行仅1nm至1μm的蚀刻而使其最终有源层厚度为200nm以下的结合衬底，已经通过在其中一个被离子注入之后将两个基板接合，然后通过热处理来分离其一部分来制备。 SC-1溶液用于进行蚀刻。在蚀刻之前和/或之后，可以在有源层上分别施加抛光，氢退火和牺牲氧化。该有源层的膜厚度可以在整个表面积上均匀，并且活性层的表面粗糙度也可以降低。

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