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1. 发明授权

US08878758B2 Charge-sharing path control device for a scan driver of an LCD panel 有权
标题翻译：用于LCD面板的扫描驱动器的电荷共享路径控制装置
公开(公告)号：US08878758B2
公开(公告)日：2014-11-04
申请号：US13560298
申请日：2012-07-27
申请人： Domenico Cristaudo , Stefano Corradi , Stefano Sueri
发明人： Domenico Cristaudo , Stefano Corradi , Stefano Sueri
IPC分类号： G09G3/36 , G09G5/00
CPC分类号： G09G3/3674 , G09G2330/023 , Y10T29/49105
摘要： A bidirectional switch includes a pair of transistors, with each transistor including a source connected via a degeneration resistance to a common source control node, a gate connected to a common gate control node, a drain connected to a respective channel or gate line and to a charge storage node, respectively, and a clamp diode connected between the source and the gate. This forms a single charge transfer path between gate lines sequentially activated by a scan driver of an LCD panel, and implements a charge sharing technique for reducing power dissipation.
摘要翻译：双向开关包括一对晶体管，每个晶体管包括经由退化电阻连接到公共源极控制节点的源极，连接到公共栅极控制节点的栅极，连接到相应沟道或栅极线的漏极和电荷存储节点和连接在源极和栅极之间的钳位二极管。这在LCD面板的扫描驱动器顺序激活的栅极线之间形成单个电荷传输路径，并实现用于降低功耗的电荷共享技术。

2. 发明申请

US20130027283A1 CHARGE-SHARING PATH CONTROL DEVICE FOR A SCAN DRIVER OF AN LCD PANEL 有权
标题翻译：用于LCD面板扫描驱动器的充电共享路径控制装置
公开(公告)号：US20130027283A1
公开(公告)日：2013-01-31
申请号：US13560298
申请日：2012-07-27
申请人： DOMENICO CRISTAUDO , Stefano Corradi , Stefano Sueri
发明人： DOMENICO CRISTAUDO , Stefano Corradi , Stefano Sueri
IPC分类号： G09G3/36 , H01H11/00
CPC分类号： G09G3/3674 , G09G2330/023 , Y10T29/49105
摘要： A bidirectional switch includes a pair of transistors, with each transistor including a source connected via a degeneration resistance to a common source control node, a gate connected to a common gate control node, a drain connected to a respective channel or gate line and to a charge storage node, respectively, and a clamp diode connected between the source and the gate. This forms a single charge transfer path between gate lines sequentially activated by a scan driver of an LCD panel, and implements a charge sharing technique for reducing power dissipation.
摘要翻译：双向开关包括一对晶体管，每个晶体管包括经由退化电阻连接到公共源极控制节点的源极，连接到公共栅极控制节点的栅极，连接到相应沟道或栅极线的漏极和电荷存储节点和连接在源极和栅极之间的钳位二极管。这在LCD面板的扫描驱动器顺序激活的栅极线之间形成单个电荷传输路径，并实现用于降低功耗的电荷共享技术。

3. 发明授权

US5617046A Generation of a diagnostic signal when the current through a power transistor reaches a level close to a limit current 失效
标题翻译：当通过功率晶体管的电流达到接近极限电流的电平时，产生诊断信号
公开(公告)号：US5617046A
公开(公告)日：1997-04-01
申请号：US272786
申请日：1994-07-08
申请人： Sergio Palara , Stefano Sueri
发明人： Sergio Palara , Stefano Sueri
IPC分类号： G01R31/26 , F02P3/05 , G01R19/165 , H03K17/08 , H03K17/64 , H03K19/082
CPC分类号： F02P3/051
摘要： A diagnostic signal, indicative of the reaching of a predefined level, lower than a fixed maximum limit value, by the current flowing through a power transistor, is generated while employing a single comparator of a reference voltage with the voltage present across a sensing resistance, thus preventing problems arising from different offset characteristics of distinct comparators. By the use of current mirrors, the generation of a diagnostic signal when the current reaches a level that can be fixed very close to the maximum limit value, may be reliably triggered, irrespectively of the offset characteristic of the single comparator employed.
摘要翻译：产生指示通过流过功率晶体管的电流达到预定电平低于固定最大极限值的诊断信号，同时使用具有跨越感测电阻的电压的参考电压的单个比较器，从而防止不同比较器的不同偏移特性引起的问题。通过使用电流镜，可以可靠地触发当电流达到非常接近最大极限值的电平时的诊断信号的产生，而与所使用的单个比较器的偏移特性无关。

4. 发明授权

US6060762A Integrated structure with reduced injection of current between homologous regions 失效
标题翻译：整合结构，减少同源区域之间的电流注入
公开(公告)号：US6060762A
公开(公告)日：2000-05-09
申请号：US855212
申请日：1997-05-13
申请人： Salvatore Scaccianoce , Stefano Sueri
发明人： Salvatore Scaccianoce , Stefano Sueri
IPC分类号： H01L21/8224 , H01L27/082 , H01L29/00
CPC分类号： H01L27/0828 , H01L27/0821
摘要： An integrated semiconductor structure comprises two homologous P-type regions formed within an N-type epitaxial layer. A P-type region formed in the portion of the epitaxial layer disposed between the two P-type regions includes within it an N-type region. This N region is electrically connected to the P region by means of a surface metal contact. The structure reduces the injection of current between the first and second P regions, at the same time preventing any vertical parasitic transistors from being switched on.
摘要翻译：集成半导体结构包括在N型外延层内形成的两个同源P型区。形成在设置在两个P型区域之间的外延层的部分中的P型区域在其内包括N型区域。该N区通过表面金属接触与P区电连接。该结构减少了在第一和第二P区之间的电流注入，同时防止任何垂直寄生晶体管接通。

5. 发明授权

US6084286A Integrated device in an emitter switching configuration and with a cellular structure 失效
标题翻译：具有发射极开关配置和蜂窝结构的集成器件
公开(公告)号：US6084286A
公开(公告)日：2000-07-04
申请号：US864653
申请日：1997-05-28
申请人： Natale Aiello , Vito Graziano , Atanasio La Barbera , Stefano Sueri
发明人： Natale Aiello , Vito Graziano , Atanasio La Barbera , Stefano Sueri
IPC分类号： H01L21/8222 , H01L27/082 , H01L29/00
CPC分类号： H01L27/0825
摘要： An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact region (405) which delimit a portion of semiconductor material within which the low-voltage transistor is formed. The contact region (405) has a network structure such as to divide this portion of semiconductor material into a plurality of cells (410) within each of which there is an elemental P-type base region (425) and an elemental N-type emitter region (430) of the low-voltage transistor. The elemental regions (425) and (430) of the various cells (410) are electrically connected to one another by means of surface metal contacts.
摘要翻译：集成器件包括集成在半导体材料的芯片（400）中的发射极切换配置中的高压晶体管和低压晶体管，该芯片（400）包括掩埋P型区域（120）和相应的P型接触区域 405），其界定形成低压晶体管的半导体材料的一部分。接触区域（405）具有将半导体材料的该部分划分成多个单元（410）的网络结构，其中每个单元具有元素P型基极区域（425）和元素N型发射极低压晶体管的区域（430）。各种电池（410）的元件区域（425）和（430）通过表面金属触点彼此电连接。

6. 发明授权

US5636097A Protective circuit for semiconductor power device 失效
标题翻译：半导体功率器件保护电路
公开(公告)号：US5636097A
公开(公告)日：1997-06-03
申请号：US469379
申请日：1995-06-06
申请人： Sergio Palara , Stefano Sueri
发明人： Sergio Palara , Stefano Sueri
IPC分类号： H03K3/286 , H03K17/082 , H02H3/00
CPC分类号： H03K17/0826 , H03K3/2865
摘要： A circuit is provided for protecting against an increase in collector current for an integrated circuit containing a power switching device. The power device drives an inductive load connected to a power supply, and is connected to a control circuit for switching the power device on and off. The protection circuit contains a clamping circuit for deactivating the control circuit and switching the power device off when the current flowing through the power device reaches a preset maximum value. In addition, a circuit is provided for inhibiting the operation of the clamping circuit for a preset time interval after the power device has been switched on, and for keeping the clamping circuit in operation during voltage undershoots caused by the inductive load following the switching of the powered device off.
摘要翻译：提供了一种用于防止集成电路增加的电路，用于包含功率开关器件的集成电路。电源设备驱动连接到电源的感性负载，并连接到控制电路，用于打开和关闭电源设备。保护电路包含一个钳位电路，用于在流过功率器件的电流达到预设的最大值时，使控制电路停用并关闭电源设备。此外，还提供了一种电路，用于在功率器件接通之后预设的时间间隔内禁止钳位电路的操作，并且用于在钳位电路切换之后由电感负载引起的电压下冲期间保持钳位电路工作关闭电源设备。

7. 发明授权

US5142218A Power supply circuit for direct voltage regulators with step-up switching configuraton 失效
标题翻译：具有升压开关配置的直流电压调节器的电源电路
公开(公告)号：US5142218A
公开(公告)日：1992-08-25
申请号：US602207
申请日：1990-10-23
申请人： Sergio Palara , Stefano Sueri
发明人： Sergio Palara , Stefano Sueri
IPC分类号： G05F1/40 , H02M1/00 , H02M1/36
CPC分类号： H02M1/36 , Y10S323/901
摘要： The circuit switches the power supply of the integrated circuit over to the input voltage of the switching regulator during the initial starting phase, and over to the output of said regulator once the steady state has been reached.

8. 发明申请

US20070024118A1 Monolithically integrated power IGBT device 审中-公开
标题翻译：整体功率IGBT器件
公开(公告)号：US20070024118A1
公开(公告)日：2007-02-01
申请号：US11438680
申请日：2006-05-22
申请人： Antonino Torres , Stefano Sueri , Davide Patti
发明人： Antonino Torres , Stefano Sueri , Davide Patti
IPC分类号： B60L1/00
CPC分类号： F02P3/0435 , F02D2041/2058 , F02D2041/2075 , F02P3/02 , H03K17/08128
摘要： A power IGBT device is monolithically integrated to include an input terminal suitable to receive an input voltage and an output terminal suitable to supply a current having a limited and predetermined highest value. Such IGBT device includes an IGBT power element inserted between said output terminal and a supply reference. The power element has a control terminal connected to the input terminal through a control circuit that includes at least a transistor inserted between the control terminal and the supply reference voltage and a resistive element inserted between the input terminal and the control terminal.
摘要翻译：功率IGBT器件被单片集成以包括适于接收输入电压的输入端子和适于提供具有有限和预定最高值的电流的输出端子。这种IGBT器件包括插入在所述输出端子和电源基准之间的IGBT功率元件。功率元件具有通过控制电路连接到输入端子的控制端子，该控制电路至少包括插入在控制端子和电源参考电压之间的晶体管，以及插入在输入端子和控制端子之间的电阻元件。

9. 发明授权

US6127723A Integrated device in an emitter-switching configuration 失效
标题翻译：集成器件在发射极切换配置中
公开(公告)号：US6127723A
公开(公告)日：2000-10-03
申请号：US16073
申请日：1998-01-30
申请人： Natale Aiello , Atanasio La Barbera , Stefano Sueri , Sergio Spampinato
发明人： Natale Aiello , Atanasio La Barbera , Stefano Sueri , Sergio Spampinato
IPC分类号： H01L27/06 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L27/0635
摘要： An integrated device in an emitter-switching configuration comprises a first bipolar transistor having a base region, an emitter region, and a collector region, a second transistor having a charge-collection terminal connected to an emitter terminal of the first transistor, and a quenching element having a terminal connected to a base terminal of the first transistor. The quenching element is formed within the base region or the emitter region of the first transistor.
摘要翻译：发射极切换配置中的集成器件包括具有基极区域，发射极区域和集电极区域的第一双极晶体管，具有连接到第一晶体管的发射极端子的电荷收集端子的第二晶体管，以及淬火元件具有连接到第一晶体管的基极端子的端子。淬灭元件形成在第一晶体管的基极区域或发射极区域内。

10. 发明授权

US5986411A IC for implementing the function of a DIAC diode 失效
标题翻译：用于实现DIAC二极管功能的IC
公开(公告)号：US5986411A
公开(公告)日：1999-11-16
申请号：US021289
申请日：1998-02-10
申请人： Stefano Sueri , Atanasio La Barbera , Natale Aiello , Vito Graziano
发明人： Stefano Sueri , Atanasio La Barbera , Natale Aiello , Vito Graziano
IPC分类号： H03K17/30 , H05B41/282 , H05B37/02
CPC分类号： H03K17/30 , H05B41/2825 , Y10S315/07
摘要： The present invention relates to an integrated circuit adapted to perform the function of a diode of the DIAC type, the circuit having an input terminal and an output terminal. The circuit includes a first input transistor having a first terminal connected to a fixed voltage reference, a second terminal, and a control terminal coupled to the input terminal of the circuit. The circuit further includes second and third transistors in a current mirror configuration, each having a first terminal for coupling to the input terminal of the circuit, and a second terminal, and associated control terminals connected together and coupled to the second terminal of the first input transistor, the second terminal of the second transistor being connected to the control terminal of the first transistor. Finally, the circuit includes a fourth output transistor connected, with first and second terminals, between the output terminal and the input terminal of the circuit, the fourth output transistor also having a control terminal connected to the second terminal of the third transistor.
摘要翻译：本发明涉及一种适用于执行DIAC型二极管功能的集成电路，该电路具有输入端和输出端。电路包括具有连接到固定电压基准的第一端子，第二端子和耦合到电路的输入端子的控制端子的第一输入晶体管。电路还包括电流镜配置中的第二和第三晶体管，每个晶体管具有用于耦合到电路的输入端的第一端子和第二端子，以及连接在一起并耦合到第一输入端的第二端子的相关联的控制端子晶体管，第二晶体管的第二端子连接到第一晶体管的控制端子。最后，电路包括第四输出晶体管，与第一和第二端子连接在输出端子和电路的输入端之间，第四输出晶体管还具有连接到第三晶体管的第二端子的控制端子。

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