专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6127723A Integrated device in an emitter-switching configuration 失效
标题翻译：集成器件在发射极切换配置中
公开(公告)号：US6127723A
公开(公告)日：2000-10-03
申请号：US16073
申请日：1998-01-30
申请人： Natale Aiello , Atanasio La Barbera , Stefano Sueri , Sergio Spampinato
发明人： Natale Aiello , Atanasio La Barbera , Stefano Sueri , Sergio Spampinato
IPC分类号： H01L27/06 , H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L27/0635
摘要： An integrated device in an emitter-switching configuration comprises a first bipolar transistor having a base region, an emitter region, and a collector region, a second transistor having a charge-collection terminal connected to an emitter terminal of the first transistor, and a quenching element having a terminal connected to a base terminal of the first transistor. The quenching element is formed within the base region or the emitter region of the first transistor.
摘要翻译：发射极切换配置中的集成器件包括具有基极区域，发射极区域和集电极区域的第一双极晶体管，具有连接到第一晶体管的发射极端子的电荷收集端子的第二晶体管，以及淬火元件具有连接到第一晶体管的基极端子的端子。淬灭元件形成在第一晶体管的基极区域或发射极区域内。

2. 发明授权

US6084286A Integrated device in an emitter switching configuration and with a cellular structure 失效
标题翻译：具有发射极开关配置和蜂窝结构的集成器件
公开(公告)号：US6084286A
公开(公告)日：2000-07-04
申请号：US864653
申请日：1997-05-28
申请人： Natale Aiello , Vito Graziano , Atanasio La Barbera , Stefano Sueri
发明人： Natale Aiello , Vito Graziano , Atanasio La Barbera , Stefano Sueri
IPC分类号： H01L21/8222 , H01L27/082 , H01L29/00
CPC分类号： H01L27/0825
摘要： An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact region (405) which delimit a portion of semiconductor material within which the low-voltage transistor is formed. The contact region (405) has a network structure such as to divide this portion of semiconductor material into a plurality of cells (410) within each of which there is an elemental P-type base region (425) and an elemental N-type emitter region (430) of the low-voltage transistor. The elemental regions (425) and (430) of the various cells (410) are electrically connected to one another by means of surface metal contacts.
摘要翻译：集成器件包括集成在半导体材料的芯片（400）中的发射极切换配置中的高压晶体管和低压晶体管，该芯片（400）包括掩埋P型区域（120）和相应的P型接触区域 405），其界定形成低压晶体管的半导体材料的一部分。接触区域（405）具有将半导体材料的该部分划分成多个单元（410）的网络结构，其中每个单元具有元素P型基极区域（425）和元素N型发射极低压晶体管的区域（430）。各种电池（410）的元件区域（425）和（430）通过表面金属触点彼此电连接。

3. 发明授权

US5986411A IC for implementing the function of a DIAC diode 失效
标题翻译：用于实现DIAC二极管功能的IC
公开(公告)号：US5986411A
公开(公告)日：1999-11-16
申请号：US021289
申请日：1998-02-10
申请人： Stefano Sueri , Atanasio La Barbera , Natale Aiello , Vito Graziano
发明人： Stefano Sueri , Atanasio La Barbera , Natale Aiello , Vito Graziano
IPC分类号： H03K17/30 , H05B41/282 , H05B37/02
CPC分类号： H03K17/30 , H05B41/2825 , Y10S315/07
摘要： The present invention relates to an integrated circuit adapted to perform the function of a diode of the DIAC type, the circuit having an input terminal and an output terminal. The circuit includes a first input transistor having a first terminal connected to a fixed voltage reference, a second terminal, and a control terminal coupled to the input terminal of the circuit. The circuit further includes second and third transistors in a current mirror configuration, each having a first terminal for coupling to the input terminal of the circuit, and a second terminal, and associated control terminals connected together and coupled to the second terminal of the first input transistor, the second terminal of the second transistor being connected to the control terminal of the first transistor. Finally, the circuit includes a fourth output transistor connected, with first and second terminals, between the output terminal and the input terminal of the circuit, the fourth output transistor also having a control terminal connected to the second terminal of the third transistor.
摘要翻译：本发明涉及一种适用于执行DIAC型二极管功能的集成电路，该电路具有输入端和输出端。电路包括具有连接到固定电压基准的第一端子，第二端子和耦合到电路的输入端子的控制端子的第一输入晶体管。电路还包括电流镜配置中的第二和第三晶体管，每个晶体管具有用于耦合到电路的输入端的第一端子和第二端子，以及连接在一起并耦合到第一输入端的第二端子的相关联的控制端子晶体管，第二晶体管的第二端子连接到第一晶体管的控制端子。最后，电路包括第四输出晶体管，与第一和第二端子连接在输出端子和电路的输入端之间，第四输出晶体管还具有连接到第三晶体管的第二端子的控制端子。

4. 发明授权

US06349048B2 Voltage converter circuit having a self-oscillating half-bridge structure 有权
标题翻译：具有自振荡半桥结构的电压转换器电路
公开(公告)号：US06349048B2
公开(公告)日：2002-02-19
申请号：US09747171
申请日：2000-12-21
申请人： Vincenzo Randazzo , Natale Aiello , Atanasio La Barbera
发明人： Vincenzo Randazzo , Natale Aiello , Atanasio La Barbera
IPC分类号： H02M75387
CPC分类号： H02M7/53862 , H02M3/3382 , H02M7/53832 , H02M7/53846 , H05B41/2828 , Y02B20/185
摘要： A voltage converter circuit with a self-oscillating half-bridge configuration has a first and a second input terminal, and a first and a second output terminal, and including: a first power switch coupled between the first input terminal and the first output terminal, a second power switch coupled between the first output terminal and the second input terminal, a first voltage sensor having a first and a second sensing terminals coupled between the first input terminal and a control terminal of the first power switch, and a second voltage sensor having a first and a second sensing terminals coupled between the first output terminal and a control terminal of the second power switch. Each voltage sensor detects a voltage variation supplied on its respective first sensing terminal and generates on the respective second sensing terminal an activation potential for the respective power switch.
摘要翻译：具有自振荡半桥结构的电压转换器电路具有第一和第二输入端以及第一和第二输出端，并且包括：耦合在第一输入端和第一输出端之间的第一功率开关，耦合在所述第一输出端子和所述第二输入端子之间的第二电源开关，具有耦合在所述第一输入端子和所述第一电源开关的控制端子之间的第一和第二感测端子的第一电压传感器，以及具有耦合在第一输出端子和第二电源开关的控制端子之间的第一和第二感测端子。每个电压传感器检测在其相应的第一感测端子上提供的电压变化，并在相应的第二感测端子上产生用于各个电力开关的激活电位。

5. 发明授权

US6091276A Device in an emitter-switching configuration with means for recovering the electrical charge during turning off 失效
标题翻译：具有发射极切换配置的器件，具有用于在关断期间恢复电荷的装置
公开(公告)号：US6091276A
公开(公告)日：2000-07-18
申请号：US067365
申请日：1998-04-27
申请人： Natale Aiello , Atanasio La Barbera
发明人： Natale Aiello , Atanasio La Barbera
IPC分类号： H03K17/00 , H03K17/567 , H03K17/04
CPC分类号： H03K17/567 , H03K2217/0036
摘要： A device in an emitter-switching configuration comprises a high-voltage transistor having a first terminal connected directly to a first power terminal of the device, a control terminal connected to a control terminal of the device, and a second terminal. The device also includes a low-voltage transistor having a first terminal connected directly to the second terminal of the high-voltage transistor and a second terminal and a control terminal which are connected directly to a second power terminal and to the control terminal of the device, respectively. A circuit portion is provided for recovering an electrical charge discharged from the control terminal of the high-voltage transistor to the second terminal of the low-voltage transistor during the turning-off of the device.
摘要翻译：发射极切换配置的器件包括：高压晶体管，其具有直接连接到器件的第一电源端子的第一端子，连接到器件的控制端子的控制端子和第二端子。该器件还包括具有直接连接到高电压晶体管的第二端子的第一端子和直接连接到第二电源端子和该器件的控制端子的第二端子和控制端子的低压晶体管，分别。提供电路部分，用于在器件断开期间将从高压晶体管的控制端子放电的电荷恢复到低压晶体管的第二端子。

6. 发明授权

US6057578A Protective integrated structure with biasing devices having a predetermined reverse conduction threshold 失效
标题翻译：具有预定反向导通阈值的偏置装置的保护一体化结构
公开(公告)号：US6057578A
公开(公告)日：2000-05-02
申请号：US195912
申请日：1998-11-19
申请人： Natale Aiello , Atanasio La Barbera
发明人： Natale Aiello , Atanasio La Barbera
IPC分类号： H01L27/02 , H01L23/62
CPC分类号： H01L27/0255
摘要： An integrated structure comprises a protective Zener diode connected between a first and a second terminal of the structure, and is formed in a chip of semiconductor material within an insulating region. The structure includes first and second biasing Zener diodes connected back-to-back between the first and the second terminals of the structure. The first and the second biasing diodes are disposed respectively in the opposite direction to and in the same direction as the protective diode, and having a common terminal connected to the insulating region. The protective diode has a reverse threshold voltage lower than a reverse threshold voltage of the second biasing diode.
摘要翻译：集成结构包括连接在结构的第一和第二端子之间的保护齐纳二极管，并且形成在绝缘区域内的半导体材料芯片中。该结构包括在结构的第一和第二端子之间背靠背连接的第一和第二偏压齐纳二极管。第一偏置二极管和第二偏置二极管分别设置在与保护二极管相反的方向和相同的方向上，并且具有连接到绝缘区域的公共端子。保护二极管具有低于第二偏置二极管的反向阈值电压的反向阈值电压。

7. 发明授权

US6051933A Bipolar power device having an integrated thermal protection for driving electric loads 失效
标题翻译：具有用于驱动电负载的集成热保护的双极功率器件
公开(公告)号：US6051933A
公开(公告)日：2000-04-18
申请号：US638382
申请日：1996-04-26
申请人： Natale Aiello , Atanasio La Barbera , Sergio Palara
发明人： Natale Aiello , Atanasio La Barbera , Sergio Palara
IPC分类号： H02H5/04 , H03K17/08 , H03K17/0812 , H05B41/285 , H05B37/00 , H03K17/56
CPC分类号： H05B41/2856 , H03K17/08126 , H02H5/044 , H03K2017/0806
摘要： A monolithically integrated power device for driving electrical loads includes a power stage having a high-voltage bipolar transistor and a low-voltage auxiliary transistor cascade-connected and inserted between a first power supply terminal and a second power supply terminal of the device. The power device also includes a driver circuit for the power stage having an input connected to an input terminal of the device. In accordance with the present invention the device includes a circuit for protection thereof against an excessive temperature rise and controlling power down of the power stage. It includes specifically a temperature sensing circuit which generates a signal dependent on the temperature present in the device, a comparator circuit which receives this signal and compares it with a reference voltage and at least a first switch circuit generating an interdiction signal when the temperature in the device exceeds a preset maximum value and which is interlocked with an output of the comparator circuit and connected functionally through its output to the power stage. The device is advantageously usable in a fluorescent lamp driving circuit, that is to say in the so-called "lamp ballast".
摘要翻译：用于驱动电负载的单片集成功率器件包括具有高压双极晶体管的功率级和串联连接并插入在器件的第一电源端子和第二电源端子之间的低压辅助晶体管。功率器件还包括用于功率级的驱动器电路，其具有连接到器件的输入端子的输入。根据本发明，该装置包括用于保护其抵抗过度温度上升并控制功率级的掉电的电路。其具体包括温度检测电路，其产生取决于设备中存在的温度的信号;比较器电路，其接收该信号并将其与参考电压进行比较;以及至少第一开关电路，当至少第一开关电路产生截止信号时，器件超过预设的最大值，并与比较器电路的输出互锁，并通过其输出功能级连接到功率级。该装置有利地可用于荧光灯驱动电路，也就是说在所谓的“灯镇流器”中。

8. 发明授权

US06593708B2 Electronic circuit for the gradual start-up of electric loads, particularly halogen lamps 失效
公开(公告)号：US06593708B2
公开(公告)日：2003-07-15
申请号：US09970164
申请日：2001-10-01
申请人： Natale Aiello , Atanasio La Barbera , Giovanni Luca Torrisi
发明人： Natale Aiello , Atanasio La Barbera , Giovanni Luca Torrisi
IPC分类号： H05B4100
CPC分类号： H05B39/045 , Y02B20/142 , Y10S315/07
摘要： An electronic circuit is for the gradual start-up of electric loads, particularly halogen lamps. The circuit may include a power device having an output terminal connected to the electric load and having at least one control terminal receiving a predetermined driving current value. The circuit may further include a comparator having a first input terminal coupled to the power device output and a second input terminal kept at a reference potential. The comparator output may be connected to a controlled switch inserted upstream of the control terminal to control the opening of the switch and adjust the start-up phase of the power device according to the value of the reference potential.

9. 发明授权

US06255890B1 Circuit for controlling the switching of a load by means of an emitter-switching device 有权
标题翻译：用于通过发射极开关器件控制负载开关的电路
公开(公告)号：US06255890B1
公开(公告)日：2001-07-03
申请号：US09314924
申请日：1999-05-19
申请人： Natale Aiello , Atanasio La Barbera
发明人： Natale Aiello , Atanasio La Barbera
IPC分类号： H03K1760
CPC分类号： H03K17/567
摘要： A circuit controls switching of a load between two supply terminals by a device in an emitter-switching configuration formed by a high-voltage bipolar power transistor and a low-voltage switch element. The bipolar power transistor has a collector connected to the load. The switch element has a first terminal connected to the emitter of the bipolar power transistor, a second terminal connected to ground, and a control terminal connected to a control terminal of the circuit. The circuit has a biasing circuit connected to a base terminal of the bipolar power transistor. To ensure that the bipolar power transistor operates in the saturation region throughout the period of conduction, even with a sinusoidal driving voltage, the biasing circuit includes a capacitive device and a charging circuit for charging the capacitive device to bias the base of the bipolar power transistor.
摘要翻译：电路通过由高压双极型功率晶体管和低压开关元件形成的发射极切换配置中的器件来控制两个电源端子之间的负载开关。双极功率晶体管具有连接到负载的集电极。开关元件具有连接到双极功率晶体管的发射极的第一端子，连接到地的第二端子以及连接到电路的控制端子的控制端子。电路具有连接到双极功率晶体管的基极的偏置电路。为了确保双极功率晶体管在整个传导周期期间在饱和区域中工作，即使采用正弦驱动电压，偏置电路也包括电容器件和充电电路，用于对电容器件充电以偏置双极功率晶体管的基极。

10. 发明授权

US06728088B2 Protection circuit against high currents in lighting converters 有权
标题翻译：照明转换器中的高电流保护电路
公开(公告)号：US06728088B2
公开(公告)日：2004-04-27
申请号：US09969552
申请日：2001-10-02
申请人： Natale Aiello , Atanasio La Barbera , Vincenzo Randazzo , Giovanni Luca Torrisi
发明人： Natale Aiello , Atanasio La Barbera , Vincenzo Randazzo , Giovanni Luca Torrisi
IPC分类号： H02H504
CPC分类号： H05B41/2856
摘要： An electronic thermal protection circuit is for high currents which can occur in the start-up phase in lighting converters. The circuit is associated with a power device having an output terminal connected to an electric load and at least one control terminal receiving a predetermined driving current value by a driving circuit portion. Advantageously, an integrated temperature sensor is provided to detect the temperature of the power device, and an output stage is connected downstream of the sensor to switch off the driving circuit portion when a predetermined operation temperature is exceeded.
摘要翻译：电子热保护电路适用于在照明转换器启动阶段可能发生的高电流。该电路与具有连接到电负载的输出端子和由驱动电路部分接收预定驱动电流值的至少一个控制端子的功率器件相关联。有利地，提供集成温度传感器以检测功率器件的温度，并且当超过预定操作温度时，输出级连接在传感器的下游，以关断驱动电路部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式