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    • 9. 发明授权
    • CVD flowable gap fill
    • CVD可流动缝隙填充
    • US07629227B1
    • 2009-12-08
    • US11925514
    • 2007-10-26
    • Feng WangVictor Y. LuBrian LuWai-Fan YauNerissa Draeger
    • Feng WangVictor Y. LuBrian LuWai-Fan YauNerissa Draeger
    • H01L21/76
    • H01L21/76224
    • Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
    • 提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中,使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙,然后转换成氧化硅膜。 在某些实施方案中,所述方法包括在形成膜中使用催化剂,例如亲核试剂或鎓催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。 还提供了将可流动膜转化为固体电介质膜的方法。 本发明的方法可用于对高纵横比间隙进行线或填充,包括具有3:1至10:1的纵横比的间隙。