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    • 2. 发明授权
    • CVD flowable gap fill
    • CVD可流动缝隙填充
    • US07629227B1
    • 2009-12-08
    • US11925514
    • 2007-10-26
    • Feng WangVictor Y. LuBrian LuWai-Fan YauNerissa Draeger
    • Feng WangVictor Y. LuBrian LuWai-Fan YauNerissa Draeger
    • H01L21/76
    • H01L21/76224
    • Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
    • 提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中,使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙,然后转换成氧化硅膜。 在某些实施方案中,所述方法包括在形成膜中使用催化剂,例如亲核试剂或鎓催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。 还提供了将可流动膜转化为固体电介质膜的方法。 本发明的方法可用于对高纵横比间隙进行线或填充,包括具有3:1至10:1的纵横比的间隙。
    • 3. 发明授权
    • CVD flowable gap fill
    • CVD可流动缝隙填充
    • US08187951B1
    • 2012-05-29
    • US12625468
    • 2009-11-24
    • Feng WangVictor Y. LuBrian LuWai-Fan YauNerissa Draeger
    • Feng WangVictor Y. LuBrian LuWai-Fan YauNerissa Draeger
    • H01L21/76
    • H01L21/76224
    • Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
    • 提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。 所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中,使得在基材上形成冷凝的可流动的膜。 可流动膜至少部分地填充衬底上的间隙,然后转换成氧化硅膜。 在某些实施方案中,所述方法包括在形成膜中使用催化剂,例如亲核试剂或鎓催化剂。 催化剂可以并入到一种反应物中和/或作为单独的反应物引入。 还提供了将可流动膜转化为固体电介质膜的方法。 本发明的方法可以用于线或填充高纵横比间隙,包括具有3:1至10:1的纵横比的间隙。
    • 6. 发明授权
    • Density gradient-free gap fill
    • 密度无梯度填充
    • US07888273B1
    • 2011-02-15
    • US11834581
    • 2007-08-06
    • Feng WangVictor Y. LuBrian LuWai-Fan Yau
    • Feng WangVictor Y. LuBrian LuWai-Fan Yau
    • H01L21/31H01L21/469
    • H01L21/76224
    • Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed film. The thickness of the layer formed is such that the subsequent anneal process creates a film that does not have a density gradient. The process is then repeated as necessary to wholly or partially fill or line the gap as desired. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios greater than about 6:1 with widths less than about 0.13 μm.
    • 多循环方法可提供密集,无缝隙和无空隙的电介质间隙填充。 所述方法包括形成部分填充间隙的液体或可流动膜,随后进行均匀地致密刚形成膜的凝固和/或退火工艺。 所形成的层的厚度使得随后的退火工艺产生不具有密度梯度的膜。 然后根据需要重复该过程以根据需要完全或部分填充或排列间隙。 本发明的方法可用于对高纵横比间隙进行排列或填充,包括具有大于约6:1的纵横比的间隙,宽度小于约0.13μm。
    • 9. 发明授权
    • Method and device to determine when to perform hybrid automatic repeat request (HARQ) combination
    • 确定何时执行混合自动重传请求(HARQ)组合的方法和设备
    • US09444601B2
    • 2016-09-13
    • US14364671
    • 2012-04-18
    • Wei ZhangFeng WangDandan GuoMing FangYao Wang
    • Wei ZhangFeng WangDandan GuoMing FangYao Wang
    • H04L5/00H04L25/06H04L1/18H04L29/08
    • H04L5/0053H04L1/1812H04L1/1845H04L1/1874H04L1/1896H04L5/0007H04L25/067H04L67/2842
    • A method for Hybrid Automatic Repeat Request (HARQ) combination is disclosed. The method includes that: externally configured parameters relevant to HARQ combination are received, and an identifier ddr2switch of DDR2 switching is calculated to acquire addresses involved before and after the HARQ combination; it is determined, according to the parameters and the addresses involved before and after the HARQ combination, whether the HARQ combination is needed to be performed; and when it is determined that the HARQ combination is needed to be performed, data in a DDR2 are read and stored into a first data cache random access memory RAMA; and a HARQ combination calculation is performed, and the calculation result is stored into a second data cache random access memory RAMB. A device for HARQ combination is further disclosed. The technical solutions provided in the disclosure are based on a latest interference cancellation algorithm, greatly increase the success probability of decoding, saves the storage space of a DDR2 and improves the reading or writing efficiency.
    • 公开了一种混合自动重传请求(HARQ)组合的方法。 该方法包括:接收与HARQ组合相关的外部配置参数,并且计算DDR2切换的标识符ddr2切换以获取HARQ组合之前和之后涉及的地址; 根据HARQ组合之前和之后的参数和地址确定是否需要执行HARQ组合; 并且当确定需要执行HARQ组合时,读取DDR2中的数据并将其存储到第一数据高速缓存随机存取存储器RAMA中; 并且执行HARQ组合计算,并且将计算结果存储到第二数据高速缓存随机存取存储器RAMB中。 还公开了一种用于HARQ组合的装置。 本公开提供的技术方案基于最新的干扰消除算法,大大提高了解码的成功概率,节省了DDR2的存储空间,提高了读写效率。
    • 10. 发明授权
    • Virtual storage migration method, virtual storage migration system and virtual machine monitor
    • 虚拟存储迁移方法,虚拟存储迁移系统和虚拟机监控
    • US09411620B2
    • 2016-08-09
    • US13340117
    • 2011-12-29
    • Zhikun WangXiaowei YangFeng WangJianhui Xu
    • Zhikun WangXiaowei YangFeng WangJianhui Xu
    • G06F12/02G06F9/455G06F3/06
    • G06F9/45533G06F3/0617G06F3/0647G06F3/0683G06F2009/4557G06F2009/45579
    • A virtual storage migration method is provided, including: starting a data migration process, and copying, from a source storage device to a destination storage device, a data block in a virtual disk to be migrated; when a VM front-end I/O read request is received, directly reading, corresponding data from the source storage device; when a VM front-end I/O write request is received, determining whether a migration data block that corresponds to the write request is being migrated, if yes, executing a write operation that corresponds to the write request after the migration of the migration data block is completed, if no, executing a write operation that corresponds to the write request; and after all the data blocks in the virtual disk to be migrated are copied to the destination storage device, stopping the data migration, and switching the virtual disk from the source storage device to the destination storage device.
    • 提供了一种虚拟存储迁移方法,包括:启动数据迁移过程,以及从源存储设备向目标存储设备复制要迁移的虚拟磁盘中的数据块; 当接收到VM前端I / O读取请求时,直接从源存储设备读取相应的数据; 当接收到VM前端I / O写请求时,确定是否正在迁移与写请求相对应的迁移数据块,如果是,则迁移迁移数据之后执行与写请求对应的写操作 块完成,如果否,执行与写请求相对应的写操作; 并且在要迁移的虚拟磁盘中的所有数据块被复制到目的地存储设备之后,停止数据迁移,并将虚拟磁盘从源存储设备切换到目的地存储设备。