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1. 发明授权

US08852384B2 Method and apparatus for detecting plasma unconfinement 有权
标题翻译：用于检测等离子体无约束的方法和装置
公开(公告)号：US08852384B2
公开(公告)日：2014-10-07
申请号：US13584646
申请日：2012-08-13
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01L21/67 , G01N21/68
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

2. 发明申请

US20090272402A1 METHOD AND APPARATUS FOR DETECTING PLASMA UNCONFINEMENT 有权
标题翻译：用于检测等离子体不确定性的方法和装置
公开(公告)号：US20090272402A1
公开(公告)日：2009-11-05
申请号：US12114681
申请日：2008-05-02
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： B08B6/00
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

3. 发明申请

US20140020708A1 EDGE EXCLUSION CONTROL WITH ADJUSTABLE PLASMA EXCLUSION ZONE RING 有权
标题翻译：边缘排除控制与可调等离子体排除环
公开(公告)号：US20140020708A1
公开(公告)日：2014-01-23
申请号：US13553734
申请日：2012-07-19
申请人： Keechan Kim , Yansung Kim
发明人： Keechan Kim , Yansung Kim
IPC分类号： C23F1/08 , B08B7/00
CPC分类号： H01J37/32862 , B08B7/0035 , H01J37/32091 , H01J37/32385 , H01J37/32568 , H01J37/32623 , H01J2237/334 , H01J2237/335
摘要： Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.
摘要翻译：描述了边缘排除控制的系统和方法。系统中的一个包括等离子体室。等离子体处理室包括具有用于支撑基板的表面的下电极。下电极与射频（RF）电源耦合。等离子体处理室还包括设置在下电极上的上电极。上电极电接地。等离子体处理室包括围绕上电极的上介质环。使用用于将上介电环的垂直位置设置为与上电极的位置分开的机构来移动上介质环。该系统还包括围绕上部介质环的上部电极延伸部。上电极延伸部电接地。该系统还包括围绕下介电环的下电极延伸部。下电极延伸部布置成与上电极延伸部相对。

4. 发明授权

US08398778B2 Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter 有权
标题翻译：使用大于晶片直径的等离子体排除区环来控制斜面蚀刻膜轮廓
公开(公告)号：US08398778B2
公开(公告)日：2013-03-19
申请号：US12076257
申请日：2008-03-14
申请人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
发明人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
IPC分类号： B08B6/00 , C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01L21/67028 , H01J37/32642 , H01L21/02087 , H01L21/3065
摘要： A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.
摘要翻译：提供一种清洁半导体衬底的斜边缘的方法。将半导体衬底放置在等离子体处理设备的反应室中的衬底支撑件上。衬底具有覆盖衬底的顶表面和斜面边缘的介电层，该层在斜面边缘的顶点的上方和下方延伸。将工艺气体引入反应室并通电为等离子体。斜面边缘用等离子体清洁，以便除去顶点以下的层，而不会移除顶点上方的所有层。

5. 发明授权

US08257503B2 Method and apparatus for detecting plasma unconfinement 有权
标题翻译：用于检测等离子体无约束的方法和装置
公开(公告)号：US08257503B2
公开(公告)日：2012-09-04
申请号：US12114681
申请日：2008-05-02
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C25F3/30
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

6. 发明授权

US08137501B2 Bevel clean device 有权
标题翻译：斜角清洁装置
公开(公告)号：US08137501B2
公开(公告)日：2012-03-20
申请号：US11672922
申请日：2007-02-08
申请人： Yunsang Kim , Andrew Bailey, III , Greg Sexton , Keechan Kim , Andras Kuthi
发明人： Yunsang Kim , Andrew Bailey, III , Greg Sexton , Keechan Kim , Andras Kuthi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02087
摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.
摘要翻译：提供了用于在晶片的斜面上去除材料的设备。提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。中心盖与晶片支撑件间隔开。第一导电环位于晶片的第一侧并与晶片间隔开。第二导电环与晶片间隔开。导电衬套围绕晶片的外边缘。开关在衬垫和接地之间，允许衬管从接地切换到浮动。

7. 发明申请

US20080227301A1 Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter 有权
标题翻译：使用大于晶片直径的等离子体排除区环来控制斜面蚀刻膜轮廓
公开(公告)号：US20080227301A1
公开(公告)日：2008-09-18
申请号：US12076257
申请日：2008-03-14
申请人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
发明人： Tong Fang , Yunsang Kim , Keechan Kim , George Stojakovic
IPC分类号： H01L21/3065 , B08B5/00 , B08B13/00 , C23F1/08
CPC分类号： H01L21/67028 , H01J37/32642 , H01L21/02087 , H01L21/3065
摘要： A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.
摘要翻译：提供一种清洁半导体衬底的斜边缘的方法。将半导体衬底放置在等离子体处理设备的反应室中的衬底支撑件上。衬底具有覆盖衬底的顶表面和斜面边缘的介电层，该层在斜面边缘的顶点的上方和下方延伸。将工艺气体引入反应室并通电为等离子体。斜面边缘用等离子体清洁，以便除去顶点以下的层，而不会移除顶点上方的所有层。

8. 发明授权

US09184030B2 Edge exclusion control with adjustable plasma exclusion zone ring 有权
标题翻译：边缘排除控制带可调等离子排阻区环
公开(公告)号：US09184030B2
公开(公告)日：2015-11-10
申请号：US13553734
申请日：2012-07-19
申请人： Keechan Kim , Yansung Kim
发明人： Keechan Kim , Yansung Kim
IPC分类号： B08B3/00 , H01J37/32
CPC分类号： H01J37/32862 , B08B7/0035 , H01J37/32091 , H01J37/32385 , H01J37/32568 , H01J37/32623 , H01J2237/334 , H01J2237/335
摘要： Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.
摘要翻译：描述了边缘排除控制的系统和方法。系统中的一个包括等离子体室。等离子体处理室包括具有用于支撑衬底的表面的下电极。下电极与射频（RF）电源耦合。等离子体处理室还包括设置在下电极上的上电极。上电极电接地。等离子体处理室包括围绕上电极的上介质环。使用用于将上介电环的垂直位置设置为与上电极的位置分开的机构来移动上介质环。该系统还包括围绕上部介质环的上部电极延伸部。上电极延伸部电接地。该系统还包括围绕下介电环的下电极延伸部。下电极延伸部布置成与上电极延伸部相对。

9. 发明申请

US20120305189A1 Method and Apparatus for Detecting Plasma Unconfinement 有权
标题翻译：用于检测等离子体无约束的方法和装置
公开(公告)号：US20120305189A1
公开(公告)日：2012-12-06
申请号：US13584646
申请日：2012-08-13
申请人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
发明人： KeeChan Kim , Yunsang Kim , Andrew D. Bailey, III
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , G01N21/68 , H01L21/67028 , H01L21/67253
摘要： A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.
摘要翻译：提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。如果偏离阈值波长强度超过目标偏差，则清除结束。

10. 发明申请

US20080190448A1 BEVEL CLEAN DEVICE 有权
标题翻译：水清洁装置
公开(公告)号：US20080190448A1
公开(公告)日：2008-08-14
申请号：US11672922
申请日：2007-02-08
申请人： Yunsang Kim , Andrew Bailey , Greg Sexton , Keechan Kim , Andras Kuthi
发明人： Yunsang Kim , Andrew Bailey , Greg Sexton , Keechan Kim , Andras Kuthi
IPC分类号： B08B6/00
CPC分类号： H01L21/02087
摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.
摘要翻译：提供了用于在晶片的斜面上去除材料的设备。提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。中心盖与晶片支撑件间隔开。第一导电环位于晶片的第一侧并与晶片间隔开。第二导电环与晶片间隔开。导电衬套围绕晶片的外边缘。开关在衬垫和接地之间，允许衬管从接地切换到浮动。

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