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1. 发明授权

US07122386B1 Method of fabricating contact pad for magnetic random access memory 有权
标题翻译：制造磁性随机存取存储器接触焊盘的方法
公开(公告)号：US07122386B1
公开(公告)日：2006-10-17
申请号：US11231674
申请日：2005-09-21
申请人： Chyu-Jiuh Torng , Tom Zhong , Wei Cao , Po-Kang Wang
发明人： Chyu-Jiuh Torng , Tom Zhong , Wei Cao , Po-Kang Wang
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/222
摘要： A method of forming a Cu—Cu junction between a word line pad (WLP) and bit line (BL) contact is described. An opening above a WL contact is formed in a first SiNx layer on a substrate that includes a WLP and word line. After a bottom electrode (BE) layer, MTJ stack, and hard mask are sequentially deposited, an etch forms an MTJ element above the word line. Another etch forms a BE and exposes the first SiNx layer above the WLP and bond pad (BP). An MTJ ILD layer is deposited and planarized followed by deposition of a second SiNx layer and BL ILD layer. Trenches are formed in the BL ILD layer and second SiNx layer above the WLP, hard mask and BP. After vias are formed in the MTJ ILD and first SiNx layers above the WLP and BP, Cu deposition follows to form dual damascene BL contacts.
摘要翻译：描述了在字线焊盘（WLP）和位线（BL）触点之间形成Cu-Cu结的方法。在包括WLP和字线的衬底上的第一SiN x层中形成WL触点上方的开口。在底电极（BE）层，MTJ叠层和硬掩模之后，顺序沉积，蚀刻在字线之上形成MTJ元件。另一蚀刻形成BE，并使WLP和接合焊盘（BP）上方的第一SiN x层暴露。沉积MTJ ILD层并平坦化，随后沉积第二SiN x层和BL ILD层。沟槽形成在WLP，硬掩模和BP之上的BL ILD层和第二SiN x x层中。在WLP和BP上方的MTJ ILD和第一SiN x x层中形成通孔之后，随后进行Cu沉积以形成双镶嵌BL触点。

2. 发明授权

US08728825B2 GMR sensor stripe for a biosensor with enhanced sensitivity 有权
标题翻译： GMR传感器条带用于具有增强灵敏度的生物传感器
公开(公告)号：US08728825B2
公开(公告)日：2014-05-20
申请号：US13417398
申请日：2012-03-12
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N27/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响磁层的磁致伸缩产生补偿横向磁各向异性。通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

3. 发明授权

US06879474B2 Junction stability and yield for spin valve heads 失效
标题翻译：自旋阀头的结点稳定性和产量
公开(公告)号：US06879474B2
公开(公告)日：2005-04-12
申请号：US10718878
申请日：2003-11-21
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

4. 发明授权

US08133439B2 GMR biosensor with enhanced sensitivity 有权
标题翻译： GMR生物传感器具有增强的灵敏度
公开(公告)号：US08133439B2
公开(公告)日：2012-03-13
申请号：US11497162
申请日：2006-08-01
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N15/06
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译：包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响磁性层产生补偿横向磁各向异性。通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

5. 发明申请

US20060196039A1 Novel abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的新型对接交换偏置设计
公开(公告)号：US20060196039A1
公开(公告)日：2006-09-07
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

6. 发明申请

US20120169331A1 GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity 有权
标题翻译：用于具有增强灵敏度的生物传感器的GMR传感器条带
公开(公告)号：US20120169331A1
公开(公告)日：2012-07-05
申请号：US13417398
申请日：2012-03-12
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01R33/02 , H05K3/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响磁层的磁致伸缩产生补偿横向磁各向异性。通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

7. 发明授权

US07336452B2 Patterned exchange bias GMR using metallic buffer layer 失效
标题翻译：图案交换偏置GMR使用金属缓冲层
公开(公告)号：US07336452B2
公开(公告)日：2008-02-26
申请号：US11036957
申请日：2005-01-14
申请人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
发明人： Moris Dovek , Po-Kang Wang , Chen-Jung Chien , Chyu-Jiuh Torng , Yun-Fei Li
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49036 , Y10T29/49044 , Y10T29/49046
摘要： In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.
摘要翻译：在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。这样的结构很难制造。本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。还描述了用于制造该结构的方法。

8. 发明申请

US20080032423A1 GMR biosensor with enhanced sensitivity 有权
标题翻译： GMR生物传感器具有增强的灵敏度
公开(公告)号：US20080032423A1
公开(公告)日：2008-02-07
申请号：US11497162
申请日：2006-08-01
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N33/536
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译：包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响磁性层产生补偿横向磁各向异性。通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

9. 发明授权

US07275304B2 Method of forming a hard bias structure in a magnetic head 失效
标题翻译：在磁头中形成硬偏置结构的方法
公开(公告)号：US07275304B2
公开(公告)日：2007-10-02
申请号：US11074244
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49021 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

10. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

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