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    • 1. 发明授权
    • RF active balun circuit for improving small-signal linearity
    • RF主动平衡 - 不平衡转换电路,用于改善小信号线性度
    • US06473595B1
    • 2002-10-29
    • US09437312
    • 1999-11-10
    • Chung Hwan KimCheon Soo KimHyun Kyu YuMin ParkDae Yong Kim
    • Chung Hwan KimCheon Soo KimHyun Kyu YuMin ParkDae Yong Kim
    • H04B110
    • H03F1/223H03F1/3205H03F1/3223
    • The RF active balun circuit for improving a small-signal linearity in a power amplifying circuit of a CDMA system is provided under the construction of a signal amplifier driven by exterior individual direct current gate power VGG1, VGG2, for receiving a communication input signal AC-In and performing a cascode amplification at a normal operation point where a feedback third-order distortion signal becomes large; a distortion signal generator driven by exterior direct current gate power VGG3 different from the above power, for generating the communication input signal AC-In as the third-order distortion signal by nonlinearity of an active element to cancel the third-order distortion signal amplified in the signal amplifier; and an insulator provided for an insulation from a exterior driving power VGG3 applied to the distortion signal generator, thereby maintaining the small size, lower power and high efficient terminal characteristics by using a gain based on gate voltage of FET and the nonlinearity characteristic difference, and improving the linearity of an IC operating by a small signal or medium signal.
    • 用于改善CDMA系统的功率放大电路中的小信号线性度的RF有源平衡 - 不平衡转换器被提供在由外部单独的直流栅极功率VGG1,VGG2驱动的信号放大器的构造下,用于接收通信输入信号AC- 在反馈三阶失真信号变大的正常工作点进行并进行共源共栅放大; 由与上述功率不同的外部直流栅极功率VGG3驱动的失真信号发生器,用于通过有源元件的非线性产生作为三阶失真信号的通信输入信号AC-In,以消除放大的三阶失真信号 信号放大器; 以及提供用于与施加到失真信号发生器的外部驱动电力VGG3绝缘的绝缘体,从而通过使用基于FET的栅极电压的增益和非线性特性差来维持小尺寸,较低功率和高效率的端子特性,以及 改善由小信号或中等信号操作的IC的线性度。
    • 8. 发明授权
    • Method for fabricating a inductor of low parasitic resistance and capacitance
    • 制造低寄生电阻和电容的电感器的方法
    • US06395637B1
    • 2002-05-28
    • US09168343
    • 1998-10-07
    • Min ParkCheon Soo KimHyun Kyu Yu
    • Min ParkCheon Soo KimHyun Kyu Yu
    • H01L21302
    • H01F41/041H01F17/0006H01F27/34H01F2017/0046H01L23/5227H01L28/10H01L2924/0002H01L2924/00
    • The present invention relates to a method for fabricating an inductor and, more particularly, to a method for fabricating a spiral inductor used in a monolithic microwave integrated circuit on a silicon substrate using semiconductor fabrication processes. The method for fabricating an inductor, comprising the steps of: forming a first dielectric layer on a silicon substrate and forming a first metal wire on the first dielectric layer, wherein the first metal wire is in contact with an active element formed on the silicon substrate; and alternatively forming dielectric layers and metal layers, wherein the metal layers are electrically connected with an upper metal wire and a lower metal wire and wherein the metal layers are patterned using the dielectric layers as etching mask, whereby a metal corrosion is prevented by using the spiral dielectric pattern as the etching mask.
    • 本发明涉及一种用于制造电感器的方法,更具体地说,涉及使用半导体制造工艺制造在硅衬底上的单片微波集成电路中使用的螺旋电感器的方法。 一种制造电感器的方法,包括以下步骤:在硅衬底上形成第一电介质层并在第一电介质层上形成第一金属线,其中第一金属线与形成在硅衬底上的有源元件接触 ; 还可以形成电介质层和金属层,其中金属层与上金属线和下金属线电连接,并且其中使用电介质层作为蚀刻掩模对金属层进行构图,由此通过使用 螺旋介质图案作为蚀刻掩模。
    • 10. 发明授权
    • Fabrication method of inductor devices using a substrate conversion
technique
    • 使用基板转换技术的电感器件的制造方法
    • US6153489A
    • 2000-11-28
    • US162784
    • 1998-09-30
    • Min ParkHyun Kyu Yu
    • Min ParkHyun Kyu Yu
    • H01L21/02H01L27/08H01L21/20
    • H01L28/10H01L27/08
    • A fabrication method of high performance integrated inductor devices using a substrate conversion technique is disclosed. By employing the trench-shaped porous silicon with high insulating property, the lossy characteristic of the silicon substrate is essentially to minimize. Also, by employing the conductive doped layer interposed between the porous silicon layer and the silicon substrate, the parasitic capacitance between metal lines and the silicon substrate is remarkably decreased. The present invention allows fabrication of high performance integrated inductors having high quality factor. Also, this invention prevents mutual-coupling between the silicon substrate and metal lines. As a result, integrated inductor devices according to this invention is readily adaptable for use in radio frequency integrated circuit (RF IC).
    • 公开了使用基板转换技术的高性能集成电感器件的制造方法。 通过采用具有高绝缘性能的沟槽状多孔硅,硅衬底的有损特性基本上是最小化的。 此外,通过使用介于多孔硅层和硅衬底之间的导电掺杂层,金属线与硅衬底之间的寄生电容显着降低。 本发明允许制造具有高品质因数的高性能集成电感器。 此外,本发明防止硅衬底和金属线之间的相互耦合。 因此,根据本发明的集成电感器件易于适用于射频集成电路(RF IC)。