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1. 发明授权

US06547977B1 Method for etching low k dielectrics 失效
标题翻译：蚀刻低k电介质的方法
公开(公告)号：US06547977B1
公开(公告)日：2003-04-15
申请号：US09610915
申请日：2000-07-05
申请人： Chun Yan , Gary C. Hsueh , Yan Ye , Diana Xiaobing Ma
发明人： Chun Yan , Gary C. Hsueh , Yan Ye , Diana Xiaobing Ma
IPC分类号： C03C1500
CPC分类号： H01L21/31138
摘要： The present disclosure pertains to a method for plasma etching of low k materials, particularly polymeric-based low k materials. Preferably the polymeric-based materials are organic-based materials. The method employs an etchant plasma where the major etchant species are generated from a halogen other than fluorine and oxygen. The preferred halogen is chlorine. The volumetric (flow rate) ratio of the halogen:oxygen in the plasma source gas ranges from about 1:20 to about 20:1. The atomic ratio of the halogen:oxygen preferably falls within the range from about 1:20 to about 20:1. When the halogen is chlorine, the preferred atomic ratio of chlorine:oxygen ranges from about 1:10 to about 5:1. When this atomic ratio of chlorine:oxygen is used, the etch selectivity for the low k material over adjacent oxygen-comprising or nitrogen-comprising layers is advantageous, typically in excess of about 10:1. The plasma source gas may contain additives in an amount of 15% or less by volume which are designed to improve selectivity for the low k dielectric over an adjacent material, to provide a better etch profile, or to provide better critical dimension control, for example. When the additive contains fluorine, the amount of the additive is such that residual chlorine on the etched surface of the low k material comprises less than 5 atomic %.
摘要翻译：本公开涉及用于等离子体蚀刻低k材料，特别是基于聚合物的低k材料的方法。优选地，基于聚合物的材料是有机基材料。该方法采用蚀刻剂等离子体，其中主要蚀刻剂物质由除氟和氧之外的卤素产生。优选的卤素是氯。等离子体源气体中的卤素：氧的体积（流速）比为约1:20至约20:1。卤素：氧的原子比优选在约1:20至约20:1的范围内。当卤素为氯时，氯：氧的优选原子比范围为约1:10至约5:1。当使用氯原子的氧原子比时，低k材料在相邻的含氧或含氮层上的蚀刻选择性是有利的，通常超过约10:1。等离子体源气体可以含有体积的15％或更少的添加剂，其被设计成提高相邻材料上的低k电介质的选择性，以提供更好的蚀刻轮廓，或提供更好的临界尺寸控制，例如。当添加剂含氟时，添加剂的量使得低k材料的蚀刻表面上的残留氯含量小于5原子％。

2. 发明授权

US06620289B1 Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system 失效
标题翻译：半导体晶片处理系统中不对称气体分布的方法和装置
公开(公告)号：US06620289B1
公开(公告)日：2003-09-16
申请号：US09300563
申请日：1999-04-27
申请人： Chun Yan , Yan Ye , Diana Xiaobing Ma
发明人： Chun Yan , Yan Ye , Diana Xiaobing Ma
IPC分类号： H01L21306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , H01J37/321 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A method and apparatus for processing a workpiece in a chamber by providing an asymmetric flow of process gas and processing the workpiece with the process gas. The asymmetric flow counteracts a non-uniform distribution of reactive species in the chamber. The asymmetric flow can be accomplished by introducing the process gas through a plurality of gas nozzles that communicate through a side wall of the chamber proximate a pump port while pumping gas with a pump coupled to the pump port. The inventive method can be used with a conventional processing chamber by only opening the gas nozzles closest to the pump and blocking any other gas nozzles. Alternatively, the method can be implemented in a processing chamber having gas nozzles located only proximate the pump port.
摘要翻译：一种用于通过提供工艺气体的非对称流动并用工艺气体处理工件来处理腔室中的工件的方法和装置。不对称流动抵消了室中反应物质的不均匀分布。不对称流动可以通过将工艺气体引入多个气体喷嘴来实现，所述多个气体喷嘴通过邻近泵口的腔室的侧壁连通，同时用连接到泵口的泵泵送气体。本发明的方法可以通过仅打开最靠近泵的气体喷嘴并阻挡任何其它气体喷嘴而与常规处理室一起使用。或者，该方法可以在具有仅位于泵端口附近的气体喷嘴的处理室中实现。

3. 发明授权

US06331380B1 Method of pattern etching a low K dielectric layer 失效
标题翻译：图案蚀刻低K电介质层的方法
公开(公告)号：US06331380B1
公开(公告)日：2001-12-18
申请号：US09549262
申请日：2000-04-14
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： G03C558
CPC分类号： H01L21/31138 , H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02274 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136 , H01L21/32139
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

4. 发明授权

US6080529A Method of etching patterned layers useful as masking during subsequent etching or for damascene structures 失效
标题翻译：在随后的蚀刻或镶嵌结构期间蚀刻用作掩模的图案化层的方法
公开(公告)号：US6080529A
公开(公告)日：2000-06-27
申请号：US174763
申请日：1998-10-19
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： H01L21/302 , H01L21/027 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/3213 , G03C5/58
CPC分类号： H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/31116 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

5. 发明授权

US5710486A Inductively and multi-capacitively coupled plasma reactor 失效
标题翻译：电感和多电容耦合等离子体反应器
公开(公告)号：US5710486A
公开(公告)日：1998-01-20
申请号：US436513
申请日：1995-05-08
申请人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin
发明人： Yan Ye , Hiroji Hanawa , Diana Xiaobing Ma , Gerald Zheyao Yin
IPC分类号： H05H1/46 , C23C14/24 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321
摘要： The invention is embodiment in a plasma reactor for processing a semiconductor wafer, the reactor having a pair of parallel capacitive electrodes at the ceiling and base of the processing chamber, respectively, each of the capacitive electrodes capacitvely coupling RF power into the chamber in accordance with a certain RF phase relationship between the pair of electrodes during processing of the semiconductor wafer for ease of plasma ignition and precise control of plasma ion energy and process reproducibility, and an inductive coil wound around a portion of the chamber and inductively coupling RF power into the chamber for independent control of plasma ion density. Preferably, in order to minimize the number of RF sources while providing independent power control, the invention includes power splitting to separately provide power from a common source or sources to the pair of electrodes and to the coil.
摘要翻译：本发明是用于处理半导体晶片的等离子体反应器中的实施例，该反应器分别在处理室的天花板和底部具有一对平行的电容电极，每个电容电极根据电容电容将RF功率电容耦合到室中在半导体晶片的处理期间该对电极之间的某些RF相位关系易于等离子体点火并且精确控制等离子体离子能量和工艺再现性，以及感应线圈，其缠绕在腔室的一部分上并将RF功率感应耦合到用于独立控制等离子体离子密度。优选地，为了在提供独立的功率控制的同时最小化RF源的数量，本发明包括功率分配以从共同的源或源分别向一对电极和线圈供电。

6. 发明授权

US06534416B1 Control of patterned etching in semiconductor features 失效
公开(公告)号：US06534416B1
公开(公告)日：2003-03-18
申请号：US09637509
申请日：2000-08-11
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.

7. 发明授权

US06488862B1 Etched patterned copper features free from etch process residue 失效
标题翻译：蚀刻图案铜特征不含蚀刻工艺残留物
公开(公告)号：US06488862B1
公开(公告)日：2002-12-03
申请号：US09428307
申请日：1999-10-27
申请人： Yan Ye , Diana Xiaobing Ma , Gerald Yin
发明人： Yan Ye , Diana Xiaobing Ma , Gerald Yin
IPC分类号： C23F100
CPC分类号： H01L21/32131 , C23F4/00 , Y10T428/12229 , Y10T428/12528 , Y10T428/12771 , Y10T428/12826 , Y10T428/12896
摘要： Copper can be pattern etched at acceptable rates and with selectivity over adjacent materials using an etch process which utilizes a solely physical process which we have termed “enhanced physical bombardment”. Enhanced physical bombardment requires an increase in ion density and/or an increase in ion energy of ionized species which strike the substrate surface. To assist in the removal of excited copper atoms from the surface being etched, the power to the ion generation source and/or the substrate offset bias source may be pulsed. In addition, when the bombarding ions are supplied from a remote source, the supply of these ions may be pulsed. Further, thermal phoresis may be used by maintaining a substrate temperature which is higher than the temperature of a surface in the etch chamber. It is also possible to use a chemically reactive species in combination with the physical ion bombardment without causing copper corrosion problems, so long as the concentration of the chemically reactive ion component is sufficiently low that the etching is carried out in a physical bombardment dominated etch regime.
摘要翻译：铜可以以可接受的速率进行图案蚀刻，并且使用使用仅称为“增强物理轰击”的物理过程的蚀刻工艺对相邻材料具有选择性。增强的物理轰击需要离子密度的增加和/或离子化物质的离子能量的增加，这些物质撞击到基底表面。为了帮助从被蚀刻的表面去除激发的铜原子，离子产生源和/或衬底偏置偏置源的功率可以是脉冲的。此外，当从远程源供应轰击离子时，这些离子的供应可以是脉冲的。此外，可以通过保持高于蚀刻室中的表面的温度的衬底温度来使用热电泳。只要化学反应离子组分的浓度足够低以致蚀刻在物理轰击主导的蚀刻状态下进行，也可以将化学反应物质与物理离子轰击结合使用而不引起铜腐蚀问题。

8. 发明授权

US5968847A Process for copper etch back 失效
公开(公告)号：US5968847A
公开(公告)日：1999-10-19
申请号：US42146
申请日：1998-03-13
申请人： Yan Ye , Diana Xiaobing Ma
发明人： Yan Ye , Diana Xiaobing Ma
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/768 , H01L21/00 , B44C1/22
CPC分类号： C23F4/00 , H01L21/32136 , H01L21/76838 , H01L21/7684
摘要： In the preparation of semiconductor structures having multilevel copper conductive features which must be interconnected, it is frequently desired to remove portions of a copper layer deposited over a substrate. In particular, where lines and contacts are created by depositing a copper layer to fill trenches and vias present in a dielectric layer, it is desired to remove the portion of the copper layer which does not form the desired line or contact. The present invention provides a method of etching a copper layer (film) to remove the portion of the film which is not part of the desired conductive interconnect structure, while avoiding over etching of the structure and the formation of corrosive surface contaminants on the surface of the etched copper. The method of etching is referred to as the etchback process, since, in a typical fabrication process, the deposited copper layer is etched back to the upper or "field" surface of a substrate containing trenches and vias which are filled by the copper. The copper layer etchback may be conducted on a substrate surface using a low temperature regime, below about 150.degree. C. Within this low temperature regime, the etchback is preferably conducted using essentially physical bombardment of the copper surface. Or, the etchback may be carried out with the substrate surface at a temperature which falls within a high temperature regime, above about 150.degree. C. Within this high temperature regime, three different etch chemistries may be used. The etch plasma may be formed solely from non-reactive gases; the etch plasma may be formed solely from gases which are produce a reactive species (such as a gas which is a source of chlorine or fluorine), or, the etch plasma may be formed from a combination of non-reactive and reactive gases which are tailored to adjust selectivity and etch rate. When the gas is a source of chlorine or fluorine, it is preferred that the gas be a compound comprising at least one other element in combination with chlorine or fluorine.

9. 发明授权

US06547978B2 Method of heating a semiconductor substrate 失效
公开(公告)号：US06547978B2
公开(公告)日：2003-04-15
申请号：US10017001
申请日：2001-12-13
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma , Chang-Lin Hsieh
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma , Chang-Lin Hsieh
IPC分类号： B44C0122
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature. The copper feature integrity is protected by several different mechanisms: 1) The reactive etchant species are designed to be only moderately aggressive, so that an acceptable etch rate is achieved without loss of control over the feature profile or the etch surface; 2) Hydrogen is applied over the etch surface so that it is absorbed onto the etch surface, where it acts as a boundary which must be crossed by the reactive species and a chemical modulator for the reactive species; and 3) Process variables are adjusted so that byproducts from the etch reaction are rendered more volatile and easily removable from the etch surface. In an inductively coupled plasma etch chamber, we have observed that the preferred chlorine reactive species are generated when the chlorine is dissociated from compounds rather than furnished as Cl2 gas.

10. 发明授权

US06489247B1 Copper etch using HCl and HBR chemistry 失效
标题翻译：铜蚀刻使用HCl和HBR化学
公开(公告)号：US06489247B1
公开(公告)日：2002-12-03
申请号：US09393446
申请日：1999-09-08
申请人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
发明人： Yan Ye , Allen Zhao , Xiancan Deng , Diana Xiaobing Ma
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , C23F4/00 , H01L21/32136
摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.
摘要翻译：铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％。最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

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